IPP120N08S4-03 - 80V, 120A OptiMOS-T2 Power MOSFET | Infineon
MPN: IPP120N08S4-03 ✓ فعالIPP120N08S4-03 جائزہ
An N-channel enhancement-mode MOSFET is a voltage-controlled majority-carrier device: applying VGS above the threshold inverts the surface under the gate oxide and creates a conductive channel between drain and source, with RDS(on) scaling inversely with channel mobility and oxide capacitance. Power MOSFETs like IPP120N08S4-03 sit at the bottom of the power-conversion hierarchy: power semiconductor -> power MOSFET -> N-channel MOSFET -> switching transistor -> discrete semiconductor. They are the workhorse building block for synchronous rectifiers, low-side switches in half-bridges, hot-swap controllers, and eFuse implementations.
Key differentiating specifications include 2.5 mΩ maximum RDS(on) at VGS = 10 V (one of the lowest in its 80 V class), 120 A continuous ID rating limited by bondwires, and 245 A silicon-limited current at TC = 25 °C based on RthJC = 0.54 K/W. The device is qualified to AEC-Q101 for automotive use, MSL1 rated to 260 °C peak reflow, 100 % avalanche-tested, and supplied as a RoHS-compliant Green Product. The OptiMOS-T2 generation improves figure-of-merit (RDS(on) × Qg) versus older T1 families, enabling higher switching frequencies with lower gate-drive losses.
Architecturally, the OptiMOS-T2 cell uses a trench-gate structure to maximize channel width per unit area while minimizing gate charge. The result is low conduction loss, low switching loss, and a robust body diode suited for synchronous-rectifier and motor-drive topologies. The TO-220-3 package exposes the drain tab for direct PCB copper heatsinking, with thermal resistance RthJC of 0.54 K/W enabling the chip to carry 245 A at 25 °C case temperature.
Typical applications include 48 V telecom hot-swap controllers, BLDC motor drives, automotive 48 V mild-hybrid systems, high-current synchronous rectification, and industrial switched-mode power supplies. The AEC-Q101 qualification makes the IPP120N08S4-03 particularly attractive for body-electronics and chassis modules where automotive-grade reliability is required.
When designing with this MOSFET, ensure VGS is driven to 10 V for full RDS(on) enhancement, account for SOA derating above 100 °C junction temperature, and provide sufficient gate-drive current (typically 1 A peak) to charge the gate quickly and minimize switching loss. The package RthJA of 62 K/W on a 6 cm² FR4 PCB heatsink should be verified against worst-case conduction loss.
This page synthesizes distributor pricing, drop-in alternatives, SOA data and practical design notes not found in the standalone manufacturer datasheet, providing engineers with a one-stop reference for evaluating IPP120N08S4-03 against its OptiMOS family siblings and cross-brand equivalents.
کے لیے ڈراپ اِن متبادل IPP120N08S4-03 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPP120N08S4-03 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف MSL Level, Mounting Type, Package.
IPI120N08S4-03
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB120N08S4-03
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPP120N08S403AKSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPB025N08N3GXT
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
STB120N8F7
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NTB130N80
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPP120N08S4-03 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Part Number | IPP120N08S4-03 |
| Manufacturer | Infineon Technologies |
| Family | OptiMOS-T2 Power-Transistor |
| Channel Type | N-channel Enhancement Mode |
| Drain-Source Voltage VDS max | 80 V |
| Continuous Drain Current ID | 120 A (bondwire limited) |
| Silicon-Limited Current | 245 A at TC = 25 °C |
| On-State Resistance RDS(on) max | 2.5 mΩ at VGS = 10 V |
| Gate-Source Voltage VGS | ±20 V (max) |
| Thermal Resistance RthJC | 0.54 K/W |
| Avalanche Rated | 100 % Avalanche tested |
| آپریٹنگ درجہ حرارت | -55 °C to +175 °C |
| پیکیج | TO-220-3 (IPAK) through-hole |
| ماؤنٹنگ ٹائپ | Through-Hole |
| MSL لیول | MSL1 (peak reflow 260 °C) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Green Product, RoHS compliant |
| Orderable Part Number | IPP120N08S403AKSA1 |
IPP120N08S4-03 پن کنفیگریشن
| پن 1 | Gate — Gate terminal - drive to VGS = 10 V for full enhancement |
| پن 2 | Drain — Drain terminal - also the metal tab mounting hole; serves as thermal anchor to heatsink |
| پن 3 | Source — Source terminal - return path for gate-drive current |
محفوظ آپریٹنگ ایریا - IPP120N08S4-03
عام استعمالات
IPP120N08S4-03 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Telecom Hot-Swap Controller, BLDC Motor Drive Low-Side Switch, Automotive 48 V Mild-Hybrid DC-DC, Synchronous Rectifier for High-Current SMPS, Industrial 48 V eBike / Light-EV Controller, Battery Management System (BMS) Discharge Path.
48 V Telecom Hot-Swap Controller
The IPP120N08S4-03 fits 48 V telecom hot-swap controllers because its 80 V VDS rating gives 32 V transient headroom above the nominal 48 V bus, while the 2.5 mΩ RDS(on) keeps worst-case inrush dissipation under 2 W at 100 A startup. Placed as the low-side FET inside a hot-swap controller IC, it absorbs the inrush of discharged bulk capacitors during board insertion without tripping the foldback circuit. The 120 A continuous rating handles sustained fault-clearing currents common to -48 V battery-backup systems, and the AEC-Q101 qualification protects against field returns.
تجویز کردہ
BLDC Motor Drive Low-Side Switch
In three-phase BLDC motor drives the IPP120N08S4-03 serves as the low-side switch in a half-bridge leg, where its 2.5 mΩ RDS(on) minimises conduction loss and extends battery runtime in portable tools. Switching at 20-50 kHz PWM with Infineon's gate-charge rating below 200 nC, the FET keeps switching losses under 30 W per leg at 60 A peak phase current. The 120 A continuous rating and 245 A peak rating comfortably handle motor startup transients, and the TO-220-3 (IPAK) package bolts to a chassis heatsink for sustained 100 A continuous operation.
تجویز کردہ
Automotive 48 V Mild-Hybrid DC-DC
The IPP120N08S4-03 is a drop-in candidate for automotive 48 V mild-hybrid DC-DC converters because it carries AEC-Q101 qualification, MSL1 to 260 °C peak reflow, and 80 V VDS - above the 48 V bus plus switching transients. Used as the synchronous rectifier on the secondary side of an isolated 48 V to 12 V buck converter, it cuts conduction loss versus the older Schottky-diode approach by 60 %. The 100 % avalanche-tested rating gives designers headroom during reverse-battery fault events common to ISO 7637-2 automotive EMC compliance.
تجویز کردہ
Synchronous Rectifier for High-Current SMPS
The IPP120N08S4-03 serves as the synchronous-rectifier FET in high-current 24 V to 48 V SMPS secondary side, replacing Schottky diodes and improving efficiency by 4-6 percentage points at full load. Its 2.5 mΩ RDS(on) at VGS = 10 V keeps rectifier conduction loss under 8 W at 60 A output, while the 120 A ID rating handles the worst-case peak current during startup into discharged capacitors. The OptiMOS-T2 cell geometry gives low Qrr body-diode reverse recovery, reducing dead-time loss in zero-voltage-switching topologies.
تجویز کردہ
Industrial 48 V eBike / Light-EV Controller
In eBike controllers and 48 V light-EV traction inverters the IPP120N08S4-03 is well-suited because its 80 V VDS absorbs the 48 V nominal bus plus inductive kick from BLDC motor windings during PWM switching. The 2.5 mΩ RDS(on) minimises battery drain during stop-and-go urban riding, extending range by 5-8 % versus higher-RDS(on) predecessors. The TO-220-3 package bolts directly to the controller housing for chassis heatsinking, and the AEC-Q101 qualification gives OEMs confidence in automotive-grade reliability for shared chassis platforms.
تجویز کردہ
Battery Management System (BMS) Discharge Path
The IPP120N08S4-03 is suitable for the high-current discharge path of 48 V Li-ion BMS architectures used in industrial forklifts and stationary storage. With 2.5 mΩ RDS(on) and 120 A continuous rating, it dissipates only 18 W at 85 A continuous discharge - manageable with the TO-220-3 package bolted to a chassis heatsink. The 80 V VDS rating gives 20 V margin above a fully-charged 16S Li-ion string at 67.2 V, and the ±20 V VGS absolute maximum simplifies selection of gate drivers like the DRV8301DCAR.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPP120N08S4-03 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPI120N08S4-03 | IPB120N08S4-03 | IPP120N08S403AKSA1 | IPB025N08N3GXT | STB120N8F7 | NTB130N80 |
|---|---|---|---|---|---|---|---|
| Package | TO-220-3 (IPAK) | TO-262 (I2PAK) - through-hole SMD | TO-263 (D2PAK) - surface-mount | TO-220-3 (IPAK) - same as target | TO-263 (D2PAK) - surface-mount | TO-263 (D2PAK) - surface-mount | TO-263 (D2PAK) - surface-mount |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| VDS max (V) | 80 | 80 | 80 | 80 | 80 | 80 | 80 |
| Continuous ID (A) | 120 | 120 | 120 | 120 | 120 | 120 | 130 |
| RDS(on) max @ VGS=10V (mΩ) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.8 | 3.0 |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| RoHS / Green Product | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Lowest RDS(on) in 80 V OptiMOS-T2 family (بمقابلہSTB120N8F7 (STMicroelectronics))
- TO-220-3 mechanical package with strong TO-220 ecosystem (بمقابلہNTB130N80 (onsemi, TO-263))
- AEC-Q101 qualified with MSL1 to 260 °C peak reflow (بمقابلہNon-automotive OptiMOS-T2 predecessors)
ڈیزائن نوٹس
At 60 A continuous load with RDS(on) of 2.5 mΩ, the IPP120N08S4-03 dissipates approximately 9 W of conduction loss. Using RthJC of 0.54 K/W and a TO-220-3 heatsink with RthSA of 5 K/W (typical 30 cm² aluminum extrusion), the junction temperature at TC = 100 °C ambient edge rises by 9 W × 5.5 K/W ≈ 50 °C, yielding TJ ≈ 150 °C - within the 175 °C maximum. Estimated: ensure heatsink is rated for at least 12 W steady-state dissipation with ambient airflow.
For TO-220-3 (IPAK) PCB layout, route the high-current source connection on a 2 oz copper top layer no narrower than 20 mm wide to maintain 100 A continuous capability without excessive trace heating. Place a 1 µF ceramic decoupling capacitor from VCC of the gate driver to the FET source within 5 mm of the gate pin to suppress high-frequency ringing during switching transitions above 50 kHz.
Do not exceed the VGS absolute maximum of ±20 V; using a 12 V gate drive is safe and gives full RDS(on) enhancement. At VGS = 5 V (logic-level drive) RDS(on) increases 2-3x, causing 3x conduction loss and risking thermal runaway. Also avoid paralleling IPP120N08S4-03 without per-FET gate-source resistors (10 kΩ) to suppress parasitic oscillation from source-inductance mismatch.
تعمیل کی معلومات
AEC-Q101 qualified (not AEC-Q100 - the automotive grade standard for discrete MOSFETs is Q101). MSL1 rated to 260 °C peak reflow. Green Product / RoHS compliant per Infineon product page. 100 % avalanche tested.
