IPP120N08S4-03 - 80V, 120A OptiMOS-T2 Power MOSFET | Infineon
MPN: IPP120N08S4-03 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.32 | $4.32 |
| 10 | $3.89 | $38.90 |
| 100 | $3.27 | $327.00 |
| 500 | $2.74 | $1,370.00 |
| 1,000 | $2.31 | $2,310.00 |
| 3,000 | $1.95 | $5,850.00 |
IPP120N08S4-03 Overview
An N-channel enhancement-mode MOSFET is a voltage-controlled majority-carrier device: applying VGS above the threshold inverts the surface under the gate oxide and creates a conductive channel between drain and source, with RDS(on) scaling inversely with channel mobility and oxide capacitance. Power MOSFETs like IPP120N08S4-03 sit at the bottom of the power-conversion hierarchy: power semiconductor -> power MOSFET -> N-channel MOSFET -> switching transistor -> discrete semiconductor. They are the workhorse building block for synchronous rectifiers, low-side switches in half-bridges, hot-swap controllers, and eFuse implementations.
Key differentiating specifications include 2.5 mΩ maximum RDS(on) at VGS = 10 V (one of the lowest in its 80 V class), 120 A continuous ID rating limited by bondwires, and 245 A silicon-limited current at TC = 25 °C based on RthJC = 0.54 K/W. The device is qualified to AEC-Q101 for automotive use, MSL1 rated to 260 °C peak reflow, 100 % avalanche-tested, and supplied as a RoHS-compliant Green Product. The OptiMOS-T2 generation improves figure-of-merit (RDS(on) × Qg) versus older T1 families, enabling higher switching frequencies with lower gate-drive losses.
Architecturally, the OptiMOS-T2 cell uses a trench-gate structure to maximize channel width per unit area while minimizing gate charge. The result is low conduction loss, low switching loss, and a robust body diode suited for synchronous-rectifier and motor-drive topologies. The TO-220-3 package exposes the drain tab for direct PCB copper heatsinking, with thermal resistance RthJC of 0.54 K/W enabling the chip to carry 245 A at 25 °C case temperature.
Typical applications include 48 V telecom hot-swap controllers, BLDC motor drives, automotive 48 V mild-hybrid systems, high-current synchronous rectification, and industrial switched-mode power supplies. The AEC-Q101 qualification makes the IPP120N08S4-03 particularly attractive for body-electronics and chassis modules where automotive-grade reliability is required.
When designing with this MOSFET, ensure VGS is driven to 10 V for full RDS(on) enhancement, account for SOA derating above 100 °C junction temperature, and provide sufficient gate-drive current (typically 1 A peak) to charge the gate quickly and minimize switching loss. The package RthJA of 62 K/W on a 6 cm² FR4 PCB heatsink should be verified against worst-case conduction loss.
This page synthesizes distributor pricing, drop-in alternatives, SOA data and practical design notes not found in the standalone manufacturer datasheet, providing engineers with a one-stop reference for evaluating IPP120N08S4-03 against its OptiMOS family siblings and cross-brand equivalents.
Drop-in alternatives for IPP120N08S4-03 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPP120N08S4-03 (same form factor and footprint) — differing in MSL Level, Mounting Type, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPI120N08S4-03
✅ Drop-In📋 Reference alternative (not in catalog)
IPB120N08S4-03
✅ Drop-In📋 Reference alternative (not in catalog)
IPP120N08S403AKSA1
✅ Drop-In✓ In Stock
$2.15 / Unit
View Datasheet →IPB025N08N3GXT
✅ Drop-In📋 Reference alternative (not in catalog)
STB120N8F7
✅ Drop-In📋 Reference alternative (not in catalog)
NTB130N80
✅ Drop-In📋 Reference alternative (not in catalog)
IPP120N08S4-03 Maximum Ratings & Electrical Characteristics
| Part Number | IPP120N08S4-03 |
| Manufacturer | Infineon Technologies |
| Family | OptiMOS-T2 Power-Transistor |
| Channel Type | N-channel Enhancement Mode |
| Drain-Source Voltage VDS max | 80 V |
| Continuous Drain Current ID | 120 A (bondwire limited) |
| Silicon-Limited Current | 245 A at TC = 25 °C |
| On-State Resistance RDS(on) max | 2.5 mΩ at VGS = 10 V |
| Gate-Source Voltage VGS | ±20 V (max) |
| Thermal Resistance RthJC | 0.54 K/W |
| Avalanche Rated | 100 % Avalanche tested |
| Operating Temperature | -55 °C to +175 °C |
| Package | TO-220-3 (IPAK) through-hole |
| Mounting Type | Through-Hole |
| MSL Level | MSL1 (peak reflow 260 °C) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Green Product, RoHS compliant |
| Orderable Part Number | IPP120N08S403AKSA1 |
IPP120N08S4-03 Pin Configuration
| Pin 1 | Gate — Gate terminal - drive to VGS = 10 V for full enhancement |
| Pin 2 | Drain — Drain terminal - also the metal tab mounting hole; serves as thermal anchor to heatsink |
| Pin 3 | Source — Source terminal - return path for gate-drive current |
Safe Operating Area - IPP120N08S4-03
Typical Applications
IPP120N08S4-03 is suitable for 6 applications: 48 V Telecom Hot-Swap Controller, BLDC Motor Drive Low-Side Switch, Automotive 48 V Mild-Hybrid DC-DC, Synchronous Rectifier for High-Current SMPS, Industrial 48 V eBike / Light-EV Controller, Battery Management System (BMS) Discharge Path.
48 V Telecom Hot-Swap Controller
The IPP120N08S4-03 fits 48 V telecom hot-swap controllers because its 80 V VDS rating gives 32 V transient headroom above the nominal 48 V bus, while the 2.5 mΩ RDS(on) keeps worst-case inrush dissipation under 2 W at 100 A startup. Placed as the low-side FET inside a hot-swap controller IC, it absorbs the inrush of discharged bulk capacitors during board insertion without tripping the foldback circuit. The 120 A continuous rating handles sustained fault-clearing currents common to -48 V battery-backup systems, and the AEC-Q101 qualification protects against field returns.
Recommended
BLDC Motor Drive Low-Side Switch
In three-phase BLDC motor drives the IPP120N08S4-03 serves as the low-side switch in a half-bridge leg, where its 2.5 mΩ RDS(on) minimises conduction loss and extends battery runtime in portable tools. Switching at 20-50 kHz PWM with Infineon's gate-charge rating below 200 nC, the FET keeps switching losses under 30 W per leg at 60 A peak phase current. The 120 A continuous rating and 245 A peak rating comfortably handle motor startup transients, and the TO-220-3 (IPAK) package bolts to a chassis heatsink for sustained 100 A continuous operation.
Recommended
Automotive 48 V Mild-Hybrid DC-DC
The IPP120N08S4-03 is a drop-in candidate for automotive 48 V mild-hybrid DC-DC converters because it carries AEC-Q101 qualification, MSL1 to 260 °C peak reflow, and 80 V VDS - above the 48 V bus plus switching transients. Used as the synchronous rectifier on the secondary side of an isolated 48 V to 12 V buck converter, it cuts conduction loss versus the older Schottky-diode approach by 60 %. The 100 % avalanche-tested rating gives designers headroom during reverse-battery fault events common to ISO 7637-2 automotive EMC compliance.
Recommended
Synchronous Rectifier for High-Current SMPS
The IPP120N08S4-03 serves as the synchronous-rectifier FET in high-current 24 V to 48 V SMPS secondary side, replacing Schottky diodes and improving efficiency by 4-6 percentage points at full load. Its 2.5 mΩ RDS(on) at VGS = 10 V keeps rectifier conduction loss under 8 W at 60 A output, while the 120 A ID rating handles the worst-case peak current during startup into discharged capacitors. The OptiMOS-T2 cell geometry gives low Qrr body-diode reverse recovery, reducing dead-time loss in zero-voltage-switching topologies.
Recommended
Industrial 48 V eBike / Light-EV Controller
In eBike controllers and 48 V light-EV traction inverters the IPP120N08S4-03 is well-suited because its 80 V VDS absorbs the 48 V nominal bus plus inductive kick from BLDC motor windings during PWM switching. The 2.5 mΩ RDS(on) minimises battery drain during stop-and-go urban riding, extending range by 5-8 % versus higher-RDS(on) predecessors. The TO-220-3 package bolts directly to the controller housing for chassis heatsinking, and the AEC-Q101 qualification gives OEMs confidence in automotive-grade reliability for shared chassis platforms.
Recommended
Battery Management System (BMS) Discharge Path
The IPP120N08S4-03 is suitable for the high-current discharge path of 48 V Li-ion BMS architectures used in industrial forklifts and stationary storage. With 2.5 mΩ RDS(on) and 120 A continuous rating, it dissipates only 18 W at 85 A continuous discharge - manageable with the TO-220-3 package bolted to a chassis heatsink. The 80 V VDS rating gives 20 V margin above a fully-charged 16S Li-ion string at 67.2 V, and the ±20 V VGS absolute maximum simplifies selection of gate drivers like the DRV8301DCAR.
Recommended
Recommended Products Summary
Engineering reference data for IPP120N08S4-03 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPI120N08S4-03 | IPB120N08S4-03 | IPP120N08S403AKSA1 | IPB025N08N3GXT | STB120N8F7 | NTB130N80 |
|---|---|---|---|---|---|---|---|
| Package | TO-220-3 (IPAK) | TO-262 (I2PAK) - through-hole SMD | TO-263 (D2PAK) - surface-mount | TO-220-3 (IPAK) - same as target | TO-263 (D2PAK) - surface-mount | TO-263 (D2PAK) - surface-mount | TO-263 (D2PAK) - surface-mount |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| VDS max (V) | 80 | 80 | 80 | 80 | 80 | 80 | 80 |
| Continuous ID (A) | 120 | 120 | 120 | 120 | 120 | 120 | 130 |
| RDS(on) max @ VGS=10V (mΩ) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.8 | 3.0 |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| RoHS / Green Product | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in 80 V OptiMOS-T2 family (vs STB120N8F7 (STMicroelectronics))
- TO-220-3 mechanical package with strong TO-220 ecosystem (vs NTB130N80 (onsemi, TO-263))
- AEC-Q101 qualified with MSL1 to 260 °C peak reflow (vs Non-automotive OptiMOS-T2 predecessors)
Design Notes
At 60 A continuous load with RDS(on) of 2.5 mΩ, the IPP120N08S4-03 dissipates approximately 9 W of conduction loss. Using RthJC of 0.54 K/W and a TO-220-3 heatsink with RthSA of 5 K/W (typical 30 cm² aluminum extrusion), the junction temperature at TC = 100 °C ambient edge rises by 9 W × 5.5 K/W ≈ 50 °C, yielding TJ ≈ 150 °C - within the 175 °C maximum. Estimated: ensure heatsink is rated for at least 12 W steady-state dissipation with ambient airflow.
For TO-220-3 (IPAK) PCB layout, route the high-current source connection on a 2 oz copper top layer no narrower than 20 mm wide to maintain 100 A continuous capability without excessive trace heating. Place a 1 µF ceramic decoupling capacitor from VCC of the gate driver to the FET source within 5 mm of the gate pin to suppress high-frequency ringing during switching transitions above 50 kHz.
Do not exceed the VGS absolute maximum of ±20 V; using a 12 V gate drive is safe and gives full RDS(on) enhancement. At VGS = 5 V (logic-level drive) RDS(on) increases 2-3x, causing 3x conduction loss and risking thermal runaway. Also avoid paralleling IPP120N08S4-03 without per-FET gate-source resistors (10 kΩ) to suppress parasitic oscillation from source-inductance mismatch.
Compliance Information
AEC-Q101 qualified (not AEC-Q100 - the automotive grade standard for discrete MOSFETs is Q101). MSL1 rated to 260 °C peak reflow. Green Product / RoHS compliant per Infineon product page. 100 % avalanche tested.
