IRFS4321TRLPBF - 150V 85A N-Ch HEXFET MOSFET D2PAK | Infineon
MPN: IRFS4321TRLPBF ✓ فعالIRFS4321TRLPBF جائزہ
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of a semiconductor body to form an n-type conduction channel between drain and source. HEXFET is Infineon's (formerly International Rectifier) trademarked family of power MOSFETs using a vertical DMOS cell structure with a hexagonal cell geometry that maximises channel density per unit area, reducing RDS(on) for a given silicon footprint. Within the broader component taxonomy, the IRFS4321TRLPBF belongs to: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET -> HEXFET family.
Key features include 150 V VDS rating (with avalanche energy rated for unclamped inductive switching), 15 mOhm maximum RDS(on) at VGS = 10 V, 71 nC typical Qg enabling fast switching transitions, and a maximum junction-to-case thermal resistance of 0.45 C/W (end-of-life RθJC after 1000 thermal cycles is 0.65 C/W). The D2PAK package supports high continuous current thanks to its large metal tab that doubles as the drain terminal and a primary thermal path to the PCB copper pour or external heatsink.
From an application-fit perspective, the IRFS4321TRLPBF is well-suited to 100-150 V class synchronous rectification in telecom and server SMPS, hard-switched high-frequency converters, uninterruptible power supply (UPS) low-side switches, and motion-control class-D or three-phase inverter bridges. The 85 A Tc rating provides significant thermal derating headroom over 40-50 A alternatives when board copper is limited.
When designing with this part, calculate conduction loss as P = ID2 × RDS(on) × RθJA-derating and verify that the system stays within the SOA curve printed in the manufacturer datasheet. Designers should also evaluate the VGS(th) and gate-drive voltage to ensure compatibility with the chosen controller. This page synthesises distributor pricing, drop-in alternatives and design notes that complement the manufacturer datasheet with supply-chain and engineering-decision context.
کے لیے ڈراپ اِن متبادل IRFS4321TRLPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRFS4321TRLPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Total Gate Charge (Qg), FET Type, RoHS Status.
IRFS4321TRRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFS4321PbF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
VBL1151N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFS4321TRLPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A |
| RDS(on) Max at VGS=10V | 15 mOhm |
| Gate-to-Source Voltage (VGS) Max | ±20 V |
| Total Gate Charge (Qg) Typ | 71 nC |
| Total Gate Charge (Qg) Max | 110 nC |
| Power Dissipation (PD) at Tc=25C | 350 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| پیکیج | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) |
| RoHS اسٹیٹس | Compliant |
IRFS4321TRLPBF پن کنفیگریشن
| پن 1 | Gate — Gate control input (MOSFET gate terminal) |
| پن 2 | Drain — Drain terminal (internally connected to the metal tab) |
| پن 3 | Source — Source terminal (MOSFET return) |
| پن Tab | Drain — Metal tab - electrically connected to Drain (pin 2) and serves as primary thermal path |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IRFS4321TRLPBF کے لیے موزوں ہے 7 ایپلیکیشنs: SMPS Synchronous Rectification, Uninterruptible Power Supply (UPS), Motion Control / Motor Drive, Hard-Switched High-Frequency Converters, Battery Management Systems (BMS) Discharge Path, Solar Inverter / PV Input Stage, Automotive 48 V Mild-Hybrid Systems.
SMPS Synchronous Rectification
The IRFS4321TRLPBF is well-matched to 100-150 V class synchronous rectifier positions in telecom and server SMPS designs. Its 150 V VDS rating gives ample avalanche margin above a 100 V continuous bus, while 15 mOhm max RDS(on) at VGS = 10 V keeps conduction loss at approximately 19 W per device at 50 A load. The 71 nC typical Qg allows 100-200 kHz switching transitions with a standard 1-2 A gate driver, and the D2PAK package dissipates 350 W with proper copper area, making it ideal for high-current half-bridge and full-bridge synchronous stages.
تجویز کردہ
Uninterruptible Power Supply (UPS)
In on-line UPS and line-interactive battery backup systems operating on 48-96 V battery stacks, the IRFS4321TRLPBF serves as the low-side switch in the bidirectional inverter stage. Its 85 A continuous Tc rating supports 5-10 kVA UPS designs with proper thermal management, while 15 mOhm RDS(on) limits conduction loss to under 1.5% of throughput power. The 0.45 C/W RθJC enables compact heatsinking in rack-mounted UPS chassis, and the 150 V VDS provides over-voltage margin for transient battery load-dump conditions.
تجویز کردہ
Motion Control / Motor Drive
The IRFS4321TRLPBF is suitable for 96-144 V BLDC and three-phase motor drives in industrial automation and robotics, where it can serve as the low-side or high-side switch in 50-100 A class inverter bridges. Its 71 nC typical Qg keeps switching loss manageable at 20-50 kHz PWM frequencies typical of motor control, while 85 A Tc supports continuous motor currents up to 60 A per phase with proper heatsinking. The D2PAK package is industry-standard for motor-drive power stages and integrates easily with FR4 or IMS substrates.
تجویز کردہ
Hard-Switched High-Frequency Converters
For hard-switched DC-DC converter topologies operating at 100-300 kHz in telecom and industrial applications, the IRFS4321TRLPBF's combination of 15 mOhm RDS(on) and 71 nC Qg achieves a favorable figure-of-merit (FOM = RDS(on) × Qg ≈ 1.07 nC·Ohm) for high-frequency efficiency. Its 150 V VDS supports 100-120 V input bus applications including 110 V rectified industrial supply rails. The HEXFET cell structure provides robust avalanche capability for unclamped inductive switching events common in hard-switched topologies.
تجویز کردہ
Battery Management Systems (BMS) Discharge Path
In 48-96 V lithium-ion battery management systems for e-mobility light EVs and energy storage, the IRFS4321TRLPBF can serve as the main discharge MOSFET or back-to-back protection switch. Its 85 A Tc rating suits 3-5 kW continuous discharge systems, and 15 mOhm RDS(on) per device minimizes parasitic conduction loss during normal operation. The 150 V VDS provides over-voltage protection margin for series-stack battery voltages up to 120 V nominal, and the D2PAK package is easily inspected and reworked during BMS prototyping.
تجویز کردہ
Solar Inverter / PV Input Stage
In solar micro-inverters and string-inverter input stages operating on 60-150 V PV panel strings, the IRFS4321TRLPBF can be used as the buck-stage main switch or boost-stage synchronous rectifier. Its 15 mOhm RDS(on) at 10 V VGS achieves 98%+ peak efficiency when paired with proper gate driving, and the 150 V VDS handles open-circuit PV voltage transients. The D2PAK package's thermal mass smooths out thermal cycling from intermittent cloud-shading events, extending system lifetime in outdoor PV installations.
تجویز کردہ
Automotive 48 V Mild-Hybrid Systems
In 48 V mild-hybrid automotive systems (MHEV) where bus voltages can reach 60-80 V steady-state with transient spikes above 100 V, the IRFS4321TRLPBF can serve in DC-DC converter stages between the 48 V bus and 12 V battery. While not AEC-Q100 qualified, its 150 V VDS rating and robust D2PAK construction provide voltage margin and thermal performance similar to automotive-grade alternatives. Designers targeting full automotive qualification should evaluate AEC-Q100 parts; the IRFS4321TRLPBF is more commonly deployed in non-automotive industrial 48 V systems.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRFS4321TRLPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFS4321TRRPBF | IRFS4321PbF | VBL1151N |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | VBsemi |
| Package | D2PAK (TO-263-3) | D2PAK (TO-263-3) | D2PAK (TO-263-3) | D2PAK (TO-263-3) |
| VDS Max | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (Tc=25C) | 85 A | 85 A | 85 A | 85 A (class) |
اہم امتیازی خصوصیات
- Higher continuous drain current at 150 V VDS than typical alternatives (بمقابلہFDB2532)
- Low 71 nC typical Qg for high-frequency switching (بمقابلہVBL1151N)
- Established manufacturer supply chain and long-term availability (بمقابلہVBL1151N (VBsemi))
ڈیزائن نوٹس
The D2PAK package has RθJC = 0.45 C/W per Infineon's datasheet, which means at 50 A conduction loss (P = I²R = 50² × 0.015 = 37.5 W), junction temperature rises 17C above case. If the case is held at 100C via a forced-air heatsink, the junction reaches 117C - within the 175C rating. For continuous 85 A operation, an external forced-air heatsink or substantial PCB copper area (minimum 6 sq inches at 2 oz copper) is required to keep RθJA below 2 C/W. End-of-life RθJC after 1000 thermal cycles rises to 0.65 C/W - factor this into long-life industrial designs requiring 10+ year service life.
Use a minimum 2 oz copper pour under the D2PAK tab with thermal vias connecting top-side copper to inner plane layers. The drain tab is internally connected to pin 2; the copper pour also serves as the drain electrical connection. Place gate-drive components within 25 mm of the gate pin to minimise gate-loop inductance and suppress VGS ringing; add a 10 Ohm gate-source resistor close to the gate pin to prevent unintended turn-on during dv/dt transients.
Do not exceed VGS = ±20 V maximum ratings - typical gate-drive ICs output 12 V or 15 V which is safe, but isolated gate drivers with bootstrap supplies can overshoot. Add a 10 kΩ pull-down on the gate to source to ensure the MOSFET stays off during controller power-up. When paralleling multiple IRFS4321TRLPBF devices, ensure symmetric PCB layout and matched gate-drive loops to prevent current imbalance - the 15 mOhm RDS(on) has a typical positive temperature coefficient that helps thermal balancing.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page; Pb-free finish (PbF suffix in part number confirms lead-free). Not AEC-Q100 qualified - for automotive applications requiring AEC-Q100, choose an automotive-grade Infineon part instead.
