IRFS4321TRLPBF vs IRFS52N15DTRLP موازنہ
تفصیلی ساتھ ساتھ موازنہ از IRFS4321TRLPBF بذریعہ Infineon اور IRFS52N15DTRLP بذریعہ Infineon. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
خصوصیات کا موازنہ
| پیرامیٹر | IRFS4321TRLPBF | IRFS52N15DTRLP |
|---|---|---|
| برانڈ | Infineon | Infineon |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 85 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | — |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C | — |
| پیکیج | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK (TO-263) surface mount |
| ماؤنٹنگ ٹائپ | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | HEXFET (Planar) |
| RoHS اسٹیٹس | Compliant | Compliant |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V (typical 3 V) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge in nC] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| آپریٹنگ درجہ حرارت رینج | — | -55 C to +175 C (junction) |
| پن کی تعداد | — | 3 (Gate, Drain, Source) + tab |
| Lead-Free Finish | — | Yes (matte tin) |
| MSL لیول | — | 1 (per JEDEC J-STD-020, typical for D2PAK) |