IRFS7430TRL7PP - 40V 240A StrongIRFET N-Channel MOSFET | Infineon
MPN: IRFS7430TRL7PP ✓ فعالIRFS7430TRL7PP جائزہ
What is a StrongIRFET MOSFET? StrongIRFET is Infineon's product family of rugged, high-current N-channel power MOSFETs targeting 40 V to 300 V bus rails. As a power MOSFET it sits in the transistor hierarchy: power MOSFET -> discrete semiconductor -> MOSFET -> transistor. Compared with standard MOSFETs, StrongIRFET devices emphasize low R_DS(on), high inrush/avalanche ruggedness, and optimized gate charge for high-current synchronous-rectification and motor-drive applications.
Key features of the IRFS7430TRL7PP include a drain-to-source breakdown voltage (V_DSS) of 40 V, pulsed drain current capability above 500 A for transient loads, and a 7-pin D2PAK footprint with the tab acting as the drain. The gate is rated for ±20 V, threshold voltage typically 2.0-3.5 V, and the device supports operating junction temperatures up to 175 °C. The 7-lead D2PAK (TO-263-7) differs from the 3-lead D2PAK by providing four additional source-sense pins for reduced parasitic source inductance, enabling higher continuous current in the same board area.
Typical applications include high-current DC-DC converters (24 V bus), brushless DC (BLDC) motor drives, synchronous rectification in telecom and server power supplies, battery management systems (BMS), hot-swap and OR-ing switches, and eMobility controllers. The combination of 240 A continuous rating, 0.75 mΩ R_DS(on), and 305 nC Qg makes it especially suitable where low conduction loss and robust avalanche capability are required.
When designing with the IRFS7430TRL7PP, place the gate-driver loop as short as possible to suppress ringing and use a 10 Ω gate resistor for switching rates above 100 kHz. The exposed tab is electrically the drain and must be soldered to a sufficient copper area (typically ≥1 in²) to keep RθJA within the SOA of the application.
This page synthesizes distributor pricing, drop-in StrongIRFET and cross-brand equivalents, and practical design notes not aggregated on the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IRFS7430TRL7PP — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRFS7430TRL7PP (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Mounting Type, Package.
IRFS7530TRL7PP
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFS7434TRLPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF1018EPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ✗ اسٹاک سے باہر
$0.38 / یونٹ
ڈیٹا شیٹ دیکھیں →VBL7402
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFS7430TRL7PP زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | StrongIRFET |
| Series | HEXFET |
| FET Type | N-Channel |
| Drain-to-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D, Tc=25°C) | 240 A |
| R_DS(on) max (V_GS=10V) | 1.2 mΩ (per family datasheet); 0.75 mΩ typical |
| Gate-Source Voltage (V_GS) max | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 3.5 V |
| Total Gate Charge (Q_g) | 305 nC |
| Power Dissipation (P_D, Tc=25°C) | 375 W |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C |
| پیکیج | D2PAK (TO-263-7), 7 leads + tab |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Single Pulse Avalanche Energy (E_AS) | 1454 mJ (per cross-reference test L=1mH) |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | MSL1 (per PartGenie) |
IRFS7430TRL7PP پن کنفیگریشن
| پن 1 | Gate — Gate drive input |
| پن 2 | Source — Source connection (sense pin) |
| پن 3 | Source — Source connection (sense pin) |
| پن 4 | Source — Source connection (sense pin) |
| پن 5 | Source — Source connection (sense pin) |
| پن 6 | Source — Source connection |
| پن 7 | Drain — Drain connection (also on tab) |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IRFS7430TRL7PP کے لیے موزوں ہے 6 ایپلیکیشنs: BLDC Motor Drive (24V Bus), Synchronous Rectification in 24V DC-DC Converters, Battery Management and Hot-Swap Switch, Industrial 24V Solenoid and Load Driver, E-Mobility and Light Electric Vehicle Powertrain, Telecom and Server OR-ing / Hot-Swap.
BLDC Motor Drive (24V Bus)
The IRFS7430TRL7PP is well-suited for 24 V brushless DC motor drives in eMobility, robotics, and industrial automation. Its 240 A continuous drain current at Tc=25°C and 0.75 mΩ typical R_DS(on) minimize conduction loss during high-torque phases, while the 305 nC total gate charge enables PWM frequencies above 50 kHz with manageable switching loss. The 7-lead D2PAK package with multiple source-sense pins reduces parasitic source inductance, suppressing the gate-ringing that otherwise limits dI/dt in motor phase switching. At 24 V / 100 A continuous per phase, the device dissipates roughly 7.5 W, manageable on a 1 in² copper pour. Its 1454 mJ single-pulse avalanche rating provides margin for motor back-EMF events during commutation. The 40 V V_DSS offers adequate headroom for 24 V nominal plus regen transients, while its 175°C maximum junction temperature supports under-hood automotive thermal envelopes.
تجویز کردہ
Synchronous Rectification in 24V DC-DC Converters
In 24 V input to lower-voltage buck converters for telecom and industrial equipment, the IRFS7430TRL7PP serves as the low-side synchronous rectifier. Its 0.75 mΩ typical R_DS(on) at V_GS=10 V cuts conduction loss compared to Schottky diodes, especially at the 50-150 A load currents typical of 48 V intermediate bus converters stepping down to 12 V or 5 V POL rails. The 305 nC Qg keeps gate-drive loss modest even at 200 kHz switching. The 7-lead D2PAK footprint supports the high peak currents seen in synchronous-rectifier positions, and the 175°C junction rating allows sustained operation in tightly-cooled enclosures. Designers should verify continuous current against the thermal design, since at VIN=24 V, VOUT=12 V, and 100 A the device dissipates roughly 1.2 W on the low side. This part is widely used in 24 V server and telecom power modules.
تجویز کردہ
Battery Management and Hot-Swap Switch
The IRFS7430TRL7PP functions as a high-current battery disconnect or hot-swap controller pass element in 12 V/24 V battery systems. Its 240 A continuous rating covers the inrush currents seen when connecting to large capacitive loads, while the 0.75 mΩ R_DS(on) keeps voltage drop below 100 mV at 100 A continuous discharge. The 175°C junction rating handles the brief thermal excursions typical during inrush before protection circuits throttle current. Its rugged avalanche capability (E_AS=1454 mJ at L=1 mH per cross-reference test) absorbs inductive kickback from cable inductance during abrupt disconnection, critical for automotive and industrial battery systems. The 7-lead D2PAK allows mounting on a heatsink with the tab electrically isolated, simplifying thermal design.
تجویز کردہ
Industrial 24V Solenoid and Load Driver
Industrial 24 V solenoid drivers, relay replacements, and high-power load switches benefit from the IRFS7430TRL7PP's 240 A continuous rating and 40 V V_DSS. The part switches resistive and inductive loads at currents beyond 50 A continuously with low heat generation: at 24 V and 50 A continuous, conduction loss is roughly 1.9 W, easily handled by the D2PAK footprint. The device's avalanche ruggedness protects against flyback voltage spikes when de-energizing solenoids or contactors, eliminating the need for external free-wheeling diodes in many cases. In PLC and factory-automation systems, the part handles 24 V DC bus switching with low R_DS(on) on-resistance. The wide operating temperature range -55°C to +175°C supports outdoor and unconditioned industrial environments, while the surface-mount D2PAK-7 saves PCB area versus TO-220 alternatives.
تجویز کردہ
E-Mobility and Light Electric Vehicle Powertrain
In 24 V / 36 V light electric vehicle powertrains (e-bikes, e-scooters, utility carts), the IRFS7430TRL7PP serves in motor controllers, regen braking, and DC-DC converter positions. The 240 A continuous rating and 0.75 mΩ typical R_DS(on) deliver high efficiency under variable load, extending battery range. The 7-lead D2PAK-7 footprint with multiple source-sense pins minimizes ringing during the 100+ A peak phase currents typical of small EV traction drives. The 1454 mJ avalanche rating absorbs back-EMF during regen braking transients where motor inductance can push drain voltage above the 40 V rail. With operating junction temperature up to 175°C, the part tolerates the enclosed-controller thermal environment of vehicle-mounted electronics. Its surface-mount construction improves shock and vibration resistance versus through-hole alternatives.
تجویز کردہ
Telecom and Server OR-ing / Hot-Swap
In -48 V telecom systems stepped down to 24 V or 12 V distribution rails, the IRFS7430TRL7PP functions as a high-current OR-ing or hot-swap MOSFET. The 240 A continuous current handles the full bus capacity of a server backplane, while the 0.75 mΩ R_DS(on) keeps forward drop below 75 mV at 100 A, well within OR-ing diode-replacement budgets. Its 40 V V_DSS is sufficient for 24 V bus OR-ing (where the higher 48 V bulk is pre-regulated), but for -48 V raw bus OR-ing a 100 V or 150 V StrongIRFET is required. The device's fast switching supports 1 ms hot-swap ramp profiles, minimizing inrush into downstream bulk capacitors. The 175°C junction rating supports tightly-packed server thermal envelopes where airflow is restricted.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRFS7430TRL7PP — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFS7530TRL7PP | IRFS7434TRLPBF | VBL7402 | IRF1018EPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | VBsemi | Infineon |
| Package | TO-263-7 (D2PAK-7) | TO-263-7 (D2PAK-7) - same | TO-263-7 (D2PAK-7) - same | TO-263-7 (D2PAK-7) - same | TO-263 (D2PAK) - 3-pin variant |
| V_DSS (V) | 40 V | 75 V | 40 V | 40 V | 60 V |
اہم امتیازی خصوصیات
- Higher V_DSS for 48V bus tolerance (بمقابلہIRFS7530TRL7PP)
- Higher continuous current rating than cross-brand alternative (بمقابلہVBL7402)
- StrongIRFET ruggedness vs standard MOSFETs (بمقابلہIRF1018EPBF)
ڈیزائن نوٹس
At V_IN=24V, V_OUT=12V (synchronous-rectifier low-side), 100A continuous, the IRFS7430TRL7PP dissipates roughly 7.5W (estimated: P = I² × R_DS(on) ≈ 100² × 0.75mΩ). The TO-263-7 package has a typical RθJA of 40°C/W on 1 in² of 2 oz copper, giving a junction-temperature rise of roughly 300°C above ambient at 7.5W - which would exceed the 175°C junction limit without active cooling or larger copper. Recommended: use a 2 in² copper pour minimum, or attach a small clip-on heatsink for sustained >100A operation. The metal tab is electrically the drain and must be soldered to the PCB copper area to achieve the rated thermal performance.
The 7-lead D2PAK-7 package provides four extra source pins (pins 2-6) specifically to reduce parasitic source inductance Ls. Use Kelvin-source connection: tie the gate-driver ground return to pin 2 (the source pin closest to the gate), and use the main current-return path through pins 3-6 and the source copper pour. This eliminates the source-inductance-induced negative feedback that otherwise slows turn-off and creates gate-ringing. Place the gate-driver within 5 mm of the gate pin and use a 10 Ω gate resistor for switching rates above 100 kHz. Keep the drain copper area generous (≥1 in²) and stitch vias under the tab to inner copper planes for thermal spreading.
Do not exceed V_GS=±20V - the IRFS7430TRL7PP's gate oxide is rated for ±20V absolute maximum, and exceeding this (even briefly during transient ringing) will permanently damage the device. Use a gate-driver supply of 10V (not 12V) to stay safely below the limit with margin. Also avoid operating above the SOA curve: at V_DS=30V the device can carry only ~90A continuous (per the SOA data above), so for sustained high-current switching at high V_DS, either derate current or use multiple devices in parallel. The D2PAK-7 tab is the drain - ensure no trace runs under the tab at a different potential or a short will result.
When using the IRFS7430TRL7PP in a half-bridge configuration (e.g., motor-drive phase leg), minimize the high-side/low-side drain-source loop area to reduce switching loss and EMI. Place the high-side and low-side FETs with their drains/tabs facing each other, sharing a small ceramic bypass capacitor (≥1µF X7R) right at the switch-node. Use a wide switch-node copper pour but minimize its area to reduce capacitance. The switch-node should be the only place where high dV/dt exists; keep the gate-drive traces perpendicular and away from it to avoid capacitive coupling that causes shoot-through.
تعمیل کی معلومات
RoHS compliant per Infineon product page. MSL1 per PartGenie cross-reference. REACH compliance not explicitly stated on PartGenie but Infineon StrongIRFET family generally meets EU REACH SVHC requirements. AEC-Q100 qualification not explicitly stated - contact Infineon for automotive-grade variants if needed.
