IRFS7430TRL7PP - 40V 240A StrongIRFET N-Channel MOSFET | Infineon
MPN: IRFS7430TRL7PP ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.45 | $4.45 |
| 10 | $4.2 | $42.00 |
| 100 | $3.85 | $385.00 |
| 500 | $3.5 | $1,750.00 |
| 1,000 | $3.15 | $3,150.00 |
IRFS7430TRL7PP Overview
What is a StrongIRFET MOSFET? StrongIRFET is Infineon's product family of rugged, high-current N-channel power MOSFETs targeting 40 V to 300 V bus rails. As a power MOSFET it sits in the transistor hierarchy: power MOSFET -> discrete semiconductor -> MOSFET -> transistor. Compared with standard MOSFETs, StrongIRFET devices emphasize low R_DS(on), high inrush/avalanche ruggedness, and optimized gate charge for high-current synchronous-rectification and motor-drive applications.
Key features of the IRFS7430TRL7PP include a drain-to-source breakdown voltage (V_DSS) of 40 V, pulsed drain current capability above 500 A for transient loads, and a 7-pin D2PAK footprint with the tab acting as the drain. The gate is rated for ±20 V, threshold voltage typically 2.0-3.5 V, and the device supports operating junction temperatures up to 175 °C. The 7-lead D2PAK (TO-263-7) differs from the 3-lead D2PAK by providing four additional source-sense pins for reduced parasitic source inductance, enabling higher continuous current in the same board area.
Typical applications include high-current DC-DC converters (24 V bus), brushless DC (BLDC) motor drives, synchronous rectification in telecom and server power supplies, battery management systems (BMS), hot-swap and OR-ing switches, and eMobility controllers. The combination of 240 A continuous rating, 0.75 mΩ R_DS(on), and 305 nC Qg makes it especially suitable where low conduction loss and robust avalanche capability are required.
When designing with the IRFS7430TRL7PP, place the gate-driver loop as short as possible to suppress ringing and use a 10 Ω gate resistor for switching rates above 100 kHz. The exposed tab is electrically the drain and must be soldered to a sufficient copper area (typically ≥1 in²) to keep RθJA within the SOA of the application.
This page synthesizes distributor pricing, drop-in StrongIRFET and cross-brand equivalents, and practical design notes not aggregated on the manufacturer datasheet.
Drop-in alternatives for IRFS7430TRL7PP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFS7430TRL7PP (same form factor and footprint) — differing in Mounting Type, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFS7530TRL7PP
✅ Drop-In📋 Reference alternative (not in catalog)
IRFS7434TRLPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF1018EPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.38 / Unit
View Datasheet →VBL7402
✅ Drop-In📋 Reference alternative (not in catalog)
IRFS7430TRL7PP Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | StrongIRFET |
| Series | HEXFET |
| FET Type | N-Channel |
| Drain-to-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D, Tc=25°C) | 240 A |
| R_DS(on) max (V_GS=10V) | 1.2 mΩ (per family datasheet); 0.75 mΩ typical |
| Gate-Source Voltage (V_GS) max | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 3.5 V |
| Total Gate Charge (Q_g) | 305 nC |
| Power Dissipation (P_D, Tc=25°C) | 375 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | D2PAK (TO-263-7), 7 leads + tab |
| Mounting Type | Surface Mount |
| Single Pulse Avalanche Energy (E_AS) | 1454 mJ (per cross-reference test L=1mH) |
| RoHS Status | Compliant |
| MSL Level | MSL1 (per PartGenie) |
IRFS7430TRL7PP Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection (sense pin) |
| Pin 3 | Source — Source connection (sense pin) |
| Pin 4 | Source — Source connection (sense pin) |
| Pin 5 | Source — Source connection (sense pin) |
| Pin 6 | Source — Source connection |
| Pin 7 | Drain — Drain connection (also on tab) |
Safe Operating Area (DC)
Typical Applications
IRFS7430TRL7PP is suitable for 6 applications: BLDC Motor Drive (24V Bus), Synchronous Rectification in 24V DC-DC Converters, Battery Management and Hot-Swap Switch, Industrial 24V Solenoid and Load Driver, E-Mobility and Light Electric Vehicle Powertrain, Telecom and Server OR-ing / Hot-Swap.
BLDC Motor Drive (24V Bus)
The IRFS7430TRL7PP is well-suited for 24 V brushless DC motor drives in eMobility, robotics, and industrial automation. Its 240 A continuous drain current at Tc=25°C and 0.75 mΩ typical R_DS(on) minimize conduction loss during high-torque phases, while the 305 nC total gate charge enables PWM frequencies above 50 kHz with manageable switching loss. The 7-lead D2PAK package with multiple source-sense pins reduces parasitic source inductance, suppressing the gate-ringing that otherwise limits dI/dt in motor phase switching. At 24 V / 100 A continuous per phase, the device dissipates roughly 7.5 W, manageable on a 1 in² copper pour. Its 1454 mJ single-pulse avalanche rating provides margin for motor back-EMF events during commutation. The 40 V V_DSS offers adequate headroom for 24 V nominal plus regen transients, while its 175°C maximum junction temperature supports under-hood automotive thermal envelopes.
Recommended
Synchronous Rectification in 24V DC-DC Converters
In 24 V input to lower-voltage buck converters for telecom and industrial equipment, the IRFS7430TRL7PP serves as the low-side synchronous rectifier. Its 0.75 mΩ typical R_DS(on) at V_GS=10 V cuts conduction loss compared to Schottky diodes, especially at the 50-150 A load currents typical of 48 V intermediate bus converters stepping down to 12 V or 5 V POL rails. The 305 nC Qg keeps gate-drive loss modest even at 200 kHz switching. The 7-lead D2PAK footprint supports the high peak currents seen in synchronous-rectifier positions, and the 175°C junction rating allows sustained operation in tightly-cooled enclosures. Designers should verify continuous current against the thermal design, since at VIN=24 V, VOUT=12 V, and 100 A the device dissipates roughly 1.2 W on the low side. This part is widely used in 24 V server and telecom power modules.
Recommended
Battery Management and Hot-Swap Switch
The IRFS7430TRL7PP functions as a high-current battery disconnect or hot-swap controller pass element in 12 V/24 V battery systems. Its 240 A continuous rating covers the inrush currents seen when connecting to large capacitive loads, while the 0.75 mΩ R_DS(on) keeps voltage drop below 100 mV at 100 A continuous discharge. The 175°C junction rating handles the brief thermal excursions typical during inrush before protection circuits throttle current. Its rugged avalanche capability (E_AS=1454 mJ at L=1 mH per cross-reference test) absorbs inductive kickback from cable inductance during abrupt disconnection, critical for automotive and industrial battery systems. The 7-lead D2PAK allows mounting on a heatsink with the tab electrically isolated, simplifying thermal design.
Recommended
Industrial 24V Solenoid and Load Driver
Industrial 24 V solenoid drivers, relay replacements, and high-power load switches benefit from the IRFS7430TRL7PP's 240 A continuous rating and 40 V V_DSS. The part switches resistive and inductive loads at currents beyond 50 A continuously with low heat generation: at 24 V and 50 A continuous, conduction loss is roughly 1.9 W, easily handled by the D2PAK footprint. The device's avalanche ruggedness protects against flyback voltage spikes when de-energizing solenoids or contactors, eliminating the need for external free-wheeling diodes in many cases. In PLC and factory-automation systems, the part handles 24 V DC bus switching with low R_DS(on) on-resistance. The wide operating temperature range -55°C to +175°C supports outdoor and unconditioned industrial environments, while the surface-mount D2PAK-7 saves PCB area versus TO-220 alternatives.
Recommended
E-Mobility and Light Electric Vehicle Powertrain
In 24 V / 36 V light electric vehicle powertrains (e-bikes, e-scooters, utility carts), the IRFS7430TRL7PP serves in motor controllers, regen braking, and DC-DC converter positions. The 240 A continuous rating and 0.75 mΩ typical R_DS(on) deliver high efficiency under variable load, extending battery range. The 7-lead D2PAK-7 footprint with multiple source-sense pins minimizes ringing during the 100+ A peak phase currents typical of small EV traction drives. The 1454 mJ avalanche rating absorbs back-EMF during regen braking transients where motor inductance can push drain voltage above the 40 V rail. With operating junction temperature up to 175°C, the part tolerates the enclosed-controller thermal environment of vehicle-mounted electronics. Its surface-mount construction improves shock and vibration resistance versus through-hole alternatives.
Recommended
Telecom and Server OR-ing / Hot-Swap
In -48 V telecom systems stepped down to 24 V or 12 V distribution rails, the IRFS7430TRL7PP functions as a high-current OR-ing or hot-swap MOSFET. The 240 A continuous current handles the full bus capacity of a server backplane, while the 0.75 mΩ R_DS(on) keeps forward drop below 75 mV at 100 A, well within OR-ing diode-replacement budgets. Its 40 V V_DSS is sufficient for 24 V bus OR-ing (where the higher 48 V bulk is pre-regulated), but for -48 V raw bus OR-ing a 100 V or 150 V StrongIRFET is required. The device's fast switching supports 1 ms hot-swap ramp profiles, minimizing inrush into downstream bulk capacitors. The 175°C junction rating supports tightly-packed server thermal envelopes where airflow is restricted.
Recommended
Recommended Products Summary
Engineering reference data for IRFS7430TRL7PP — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFS7530TRL7PP | IRFS7434TRLPBF | VBL7402 | IRF1018EPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | VBsemi | Infineon |
| Package | TO-263-7 (D2PAK-7) | TO-263-7 (D2PAK-7) - same | TO-263-7 (D2PAK-7) - same | TO-263-7 (D2PAK-7) - same | TO-263 (D2PAK) - 3-pin variant |
| V_DSS (V) | 40 V | 75 V | 40 V | 40 V | 60 V |
Key Differentiators
- Higher V_DSS for 48V bus tolerance (vs IRFS7530TRL7PP)
- Higher continuous current rating than cross-brand alternative (vs VBL7402)
- StrongIRFET ruggedness vs standard MOSFETs (vs IRF1018EPBF)
Design Notes
At V_IN=24V, V_OUT=12V (synchronous-rectifier low-side), 100A continuous, the IRFS7430TRL7PP dissipates roughly 7.5W (estimated: P = I² × R_DS(on) ≈ 100² × 0.75mΩ). The TO-263-7 package has a typical RθJA of 40°C/W on 1 in² of 2 oz copper, giving a junction-temperature rise of roughly 300°C above ambient at 7.5W - which would exceed the 175°C junction limit without active cooling or larger copper. Recommended: use a 2 in² copper pour minimum, or attach a small clip-on heatsink for sustained >100A operation. The metal tab is electrically the drain and must be soldered to the PCB copper area to achieve the rated thermal performance.
The 7-lead D2PAK-7 package provides four extra source pins (pins 2-6) specifically to reduce parasitic source inductance Ls. Use Kelvin-source connection: tie the gate-driver ground return to pin 2 (the source pin closest to the gate), and use the main current-return path through pins 3-6 and the source copper pour. This eliminates the source-inductance-induced negative feedback that otherwise slows turn-off and creates gate-ringing. Place the gate-driver within 5 mm of the gate pin and use a 10 Ω gate resistor for switching rates above 100 kHz. Keep the drain copper area generous (≥1 in²) and stitch vias under the tab to inner copper planes for thermal spreading.
Do not exceed V_GS=±20V - the IRFS7430TRL7PP's gate oxide is rated for ±20V absolute maximum, and exceeding this (even briefly during transient ringing) will permanently damage the device. Use a gate-driver supply of 10V (not 12V) to stay safely below the limit with margin. Also avoid operating above the SOA curve: at V_DS=30V the device can carry only ~90A continuous (per the SOA data above), so for sustained high-current switching at high V_DS, either derate current or use multiple devices in parallel. The D2PAK-7 tab is the drain - ensure no trace runs under the tab at a different potential or a short will result.
When using the IRFS7430TRL7PP in a half-bridge configuration (e.g., motor-drive phase leg), minimize the high-side/low-side drain-source loop area to reduce switching loss and EMI. Place the high-side and low-side FETs with their drains/tabs facing each other, sharing a small ceramic bypass capacitor (≥1µF X7R) right at the switch-node. Use a wide switch-node copper pour but minimize its area to reduce capacitance. The switch-node should be the only place where high dV/dt exists; keep the gate-drive traces perpendicular and away from it to avoid capacitive coupling that causes shoot-through.
Compliance Information
RoHS compliant per Infineon product page. MSL1 per PartGenie cross-reference. REACH compliance not explicitly stated on PartGenie but Infineon StrongIRFET family generally meets EU REACH SVHC requirements. AEC-Q100 qualification not explicitly stated - contact Infineon for automotive-grade variants if needed.
