ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
MPN: ISA250300C04LMDSXTMA1 ✓ فعالISA250300C04LMDSXTMA1 جائزہ
An N+P complementary MOSFET array is a co-packaged pair of N-channel and P-channel power transistors sharing one package substrate, allowing one device to replace two discrete MOSFETs on the PCB. In the power-management hierarchy it sits under voltage regulators and DC-DC converters; OptiMOS 3 specifically targets low-voltage (<=60V) point-of-load converters, motor drivers, and load-switch blocks where figure-of-merit (RDS(on) x Qg) directly determines switching losses.
Key parametric highlights include a 40V drain-source breakdown rating on both channels, low on-resistance per channel typical of OptiMOS 3, an SO-8 footprint that drops onto standard SOIC-8 land patterns, and a tape-and-reel packaging option (suffix XTMA1) compatible with high-volume SMT assembly. The device is targeted at compact DC-DC, drone, and robotics applications per the manufacturer's product page.
The OptiMOS 3 process uses trench MOSFET technology to minimize per-cell on-resistance while keeping gate charge low. The complementary pair architecture removes the need for a charge pump on the high-side switch because the P-channel can be driven directly from the input rail, simplifying gate drive design at the cost of slightly higher RDS(on) versus an equivalent N+N pair.
Typical applications include compact synchronous buck converters, half-bridge motor drivers for drones and small robotics, USB-PD and battery-management load switches, and general-purpose half/full-bridge switching stages. The 40V rating provides ample headroom for 12V bus systems including automotive and industrial 24V nominal rails when de-rated properly. The N+P pair also suits buck-boost and Cuk topologies where one channel must block reverse voltage.
When designing with this part, calculate total power dissipation per channel (P = I^2 * RDS(on)) and confirm that the SO-8 thermal pad can sink the resulting heat. Below 2.5 W per package the SO-8 can typically run without an explicit heatsink on a 1-oz copper pad; above that, a thermal via array and enlarged copper pour are recommended. Also confirm the P-channel VGS(th) range is compatible with your gate-drive logic-level swing (3.3V or 5V).
This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet, giving engineers a faster sourcing and selection path for compact N+P MOSFET array designs.
کے لیے ڈراپ اِن متبادل ISA250300C04LMDSXTMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISA250300C04LMDSXTMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Drain-Source Voltage (VDS), Package, Technology, Mounting Type, Configuration.
IRF7341GTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFB3207ZPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →AUIRF7640S2TR
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISA250300C04LMDSXTMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Configuration | Dual N-channel + P-channel (N+P array) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current N-channel | 5.9 A (Ta), 7.9 A (Tc) |
| Continuous Drain Current P-channel | 5.8 A (Ta), 7.8 A (Tc) |
| Power Dissipation | 1.4 W (Ta), 2.5 W (Tc) |
| پیکیج | SO-8 (PG-DSO-8-920) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 3) |
| Packaging | Tape & Reel (suffix XTMA1) |
| Datasheet Document | Infineon ISA250300C04LMDS datasheet (per Infineon product page) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
ISA250300C04LMDSXTMA1 پن کنفیگریشن
| پن 1 | S1 — Source, channel 1 (per datasheet) |
| پن 2 | G1 — Gate, channel 1 |
| پن 3 | S2 — Source, channel 2 |
| پن 4 | G2 — Gate, channel 2 |
| پن 5 | D2 — Drain, channel 2 |
| پن 6 | D2 — Drain, channel 2 (pin pair) |
| پن 7 | D1 — Drain, channel 1 |
| پن 8 | D1 — Drain, channel 1 (pin pair) |
محفوظ آپریٹنگ ایریا (per Infineon datasheet Diagram 2 / 17)
عام استعمالات
ISA250300C04LMDSXTMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Compact Synchronous Buck DC-DC Converter, Drone ESC Motor Drive Stages, USB-PD and Battery Load Switch, Industrial 24V Bus Switching, Robotics H-Bridge Actuator Driver, Buck-Boost and Cuk Converter Stages.
Compact Synchronous Buck DC-DC Converter
The ISA250300C04LMDSXTMA1 is well-suited to synchronous buck converter stages in 12V-24V distributed power systems. The N-channel low-side and P-channel high-side pair eliminates the bootstrap or charge-pump circuit typically required for an N+N pair, reducing BOM count by 2-3 components. The 40V VDS rating comfortably handles 24V industrial rails with transient margin, and the SO-8 footprint fits point-of-load modules below 15mm x 15mm. Per the manufacturer datasheet, sustained drain currents up to 5.9A (Ta) match typical 25-30W POL designs.
تجویز کردہ
Drone ESC Motor Drive Stages
Brushless DC ESC (electronic speed controller) half-bridges in drones benefit from the ISA250300C04LMDSXTMA1's compact SO-8 N+P architecture. The P-channel high-side is driven directly from the battery rail, removing the bootstrap capacitor and diode pair, which simplifies gate timing and reduces PCB area in 4-in-1 ESC stacks. The 40V rating covers 6S LiPo battery packs (25.2V nominal) with derating headroom. The Infineon product page explicitly positions this part for drone and robotics motor control.
تجویز کردہ
USB-PD and Battery Load Switch
In USB-PD load-switch and battery-management blocks, the ISA250300C04LMDSXTMA1 provides reverse-current blocking via the P-channel half and high-side switching via the N-channel half, in one SO-8 device. This compact integration reduces PCB footprint versus two discretes and simplifies protection logic. The 40V VDS rating is well above USB-PD 20V source rails, and the 5.9A continuous current matches 100W PD power envelopes. The Infineon OptiMOS 3 process ensures low RDS(on) at logic-level VGS.
تجویز کردہ
Industrial 24V Bus Switching
Factory automation 24V bus switching modules can use the ISA250300C04LMDSXTMA1 as a half-bridge output stage in PLC digital-output cards or sensor power multiplexers. The 40V VDS rating provides 16V of headroom above the 24V nominal industrial rail, comfortably handling inductive kickback and load-dump transients when de-rated per Diagram 2 of the manufacturer datasheet. The 2.5W Tc power dissipation supports sustained 3-4A output without additional heatsinking.
تجویز کردہ
Robotics H-Bridge Actuator Driver
H-bridge DC motor actuator drivers in small robotics and servo controllers benefit from the ISA250300C04LMDSXTMA1's complementary N+P topology, which allows direct gate drive from a single supply without level shifters. This simplifies firmware-controlled PWM generation and reduces timing skew between high-side and low-side transitions. The 5.9A/5.8A continuous ratings suit small DC brushed motors up to ~50W, and the SO-8 footprint supports dense multi-axis actuator arrays.
تجویز کردہ
Buck-Boost and Cuk Converter Stages
Buck-boost and Cuk topologies that need a switch blocking reverse voltage can leverage the ISA250300C04LMDSXTMA1's P-channel half as the high-side blocking element. The complementary architecture supports true bidirectional power flow with simplified control loops. The 40V VDS rating covers 12V/24V automotive and telecom hold-up applications, and the SO-8 package integrates both switches in less than 30 mm^2 board area per channel.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISA250300C04LMDSXTMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF7341GTRPBF | IRFB3207ZPBF | AUIRF7640S2TR |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 (PG-DSO-8-920) | SO-8 - same | TO-220 - differs | SO-8 - same |
| Configuration | Dual N+P complementary | Dual N+N | Single N-channel | Dual N+N (automotive) |
| VDS Rating | 40 V | 55 V | 75 V | 60 V |
| Automotive Grade | No (standard grade) | No | No | Yes (AEC-Q101) |
| Technology | OptiMOS 3 trench | HEXFET planar | HEXFET planar | HEXFET planar |
اہم امتیازی خصوصیات
- Complementary N+P topology in a single SO-8 footprint (بمقابلہIRF7341GTRPBF (N+N dual))
- OptiMOS 3 trench process for low figure-of-merit (بمقابلہIRFB3207ZPBF (planar HEXFET, TO-220))
- Compact SO-8 footprint for dense layouts (بمقابلہTO-220 discrete single-channel MOSFETs)
ڈیزائن نوٹس
The ISA250300C04LMDSXTMA1 SO-8 package dissipates up to 2.5W at Tc before derating. For continuous operation above 2W per channel, use an exposed thermal pad with a via array to the opposite copper layer and at least 1 square inch of copper pour per channel. Estimating from the datasheet thermal resistance and a 50C ambient, derated continuous current per channel falls to roughly 4-4.5A on a standard 1-oz 4-layer board. Always validate against your specific PCB layout.
Place the gate-drive resistors (typically 10-100 ohm) within 5mm of the gate pins to suppress parasitic ringing. Keep the high-current drain/source loops as small as possible, using a star-ground configuration for the source returns. The P-channel gate trace should be routed away from the drain switching node to minimize dv/dt-induced turn-on; consider a small gate-source pull-down resistor (10-100 kohm) for fail-safe off-state.
Do not assume the N+P channels have identical VGS(th) or RDS(on) - the datasheet specifies each channel separately. When designing for cold-start at low temperature, ensure VGS(th)max stays within your gate-drive swing margin, as OptiMOS 3 P-channels in particular can require -10V VGS for full enhancement. Confirm the SO-8 pinout against the datasheet Diagram 1 before PCB layout - the N and P channel positions are not interchangeable.
تعمیل کی معلومات
RoHS and lead-free status inferred from Infineon product page and DigiKey listing; AEC-Q100 not stated in the verified data. For automotive qualification, evaluate AEC-Q101 parts from the same family.
