ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
Référence : ISA250300C04LMDSXTMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.18 | $1,18 |
| 10 | $1.05 | $10,50 |
| 100 | $0.92 | $92,00 |
| 500 | $0.81 | $405,00 |
| 1 000 | $0.72 | $720,00 |
| 3 000 | $0.61 | $1 830,00 |
ISA250300C04LMDSXTMA1 Présentation
An N+P complementary MOSFET array is a co-packaged pair of N-channel and P-channel power transistors sharing one package substrate, allowing one device to replace two discrete MOSFETs on the PCB. In the power-management hierarchy it sits under voltage regulators and DC-DC converters; OptiMOS 3 specifically targets low-voltage (<=60V) point-of-load converters, motor drivers, and load-switch blocks where figure-of-merit (RDS(on) x Qg) directly determines switching losses.
Key parametric highlights include a 40V drain-source breakdown rating on both channels, low on-resistance per channel typical of OptiMOS 3, an SO-8 footprint that drops onto standard SOIC-8 land patterns, and a tape-and-reel packaging option (suffix XTMA1) compatible with high-volume SMT assembly. The device is targeted at compact DC-DC, drone, and robotics applications per the manufacturer's product page.
The OptiMOS 3 process uses trench MOSFET technology to minimize per-cell on-resistance while keeping gate charge low. The complementary pair architecture removes the need for a charge pump on the high-side switch because the P-channel can be driven directly from the input rail, simplifying gate drive design at the cost of slightly higher RDS(on) versus an equivalent N+N pair.
Typical applications include compact synchronous buck converters, half-bridge motor drivers for drones and small robotics, USB-PD and battery-management load switches, and general-purpose half/full-bridge switching stages. The 40V rating provides ample headroom for 12V bus systems including automotive and industrial 24V nominal rails when de-rated properly. The N+P pair also suits buck-boost and Cuk topologies where one channel must block reverse voltage.
When designing with this part, calculate total power dissipation per channel (P = I^2 * RDS(on)) and confirm that the SO-8 thermal pad can sink the resulting heat. Below 2.5 W per package the SO-8 can typically run without an explicit heatsink on a 1-oz copper pad; above that, a thermal via array and enlarged copper pour are recommended. Also confirm the P-channel VGS(th) range is compatible with your gate-drive logic-level swing (3.3V or 5V).
This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the manufacturer datasheet, giving engineers a faster sourcing and selection path for compact N+P MOSFET array designs.
Alternatives de remplacement direct pour ISA250300C04LMDSXTMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec ISA250300C04LMDSXTMA1 (même facteur de forme et même empreinte) — différant par Drain-Source Voltage (VDS), Package, Technology, Mounting Type, Configuration.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRF7341GTRPBF
✅ Remplacement direct✓ En stock
$0.76 / unité
Voir la fiche technique →IRFB3207ZPBF
✅ Remplacement direct✓ En stock
$1.62 / unité
Voir la fiche technique →AUIRF7640S2TR
✅ Remplacement direct✓ En stock
$1.18 / unité
Voir la fiche technique →ISA250300C04LMDSXTMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Configuration | Dual N-channel + P-channel (N+P array) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current N-channel | 5.9 A (Ta), 7.9 A (Tc) |
| Continuous Drain Current P-channel | 5.8 A (Ta), 7.8 A (Tc) |
| Power Dissipation | 1.4 W (Ta), 2.5 W (Tc) |
| Boîtier | SO-8 (PG-DSO-8-920) |
| Type de montage | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 3) |
| Packaging | Tape & Reel (suffix XTMA1) |
| Datasheet Document | Infineon ISA250300C04LMDS datasheet (per Infineon product page) |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de ISA250300C04LMDSXTMA1
| Broche 1 | S1 — Source, channel 1 (per datasheet) |
| Broche 2 | G1 — Gate, channel 1 |
| Broche 3 | S2 — Source, channel 2 |
| Broche 4 | G2 — Gate, channel 2 |
| Broche 5 | D2 — Drain, channel 2 |
| Broche 6 | D2 — Drain, channel 2 (pin pair) |
| Broche 7 | D1 — Drain, channel 1 |
| Broche 8 | D1 — Drain, channel 1 (pin pair) |
Zone de fonctionnement sûr (per Infineon datasheet Diagram 2 / 17)
Applications typiques
ISA250300C04LMDSXTMA1 convient pour 6 applications: Compact Synchronous Buck DC-DC Converter, Drone ESC Motor Drive Stages, USB-PD and Battery Load Switch, Industrial 24V Bus Switching, Robotics H-Bridge Actuator Driver, Buck-Boost and Cuk Converter Stages.
Compact Synchronous Buck DC-DC Converter
The ISA250300C04LMDSXTMA1 is well-suited to synchronous buck converter stages in 12V-24V distributed power systems. The N-channel low-side and P-channel high-side pair eliminates the bootstrap or charge-pump circuit typically required for an N+N pair, reducing BOM count by 2-3 components. The 40V VDS rating comfortably handles 24V industrial rails with transient margin, and the SO-8 footprint fits point-of-load modules below 15mm x 15mm. Per the manufacturer datasheet, sustained drain currents up to 5.9A (Ta) match typical 25-30W POL designs.
Recommandé
Drone ESC Motor Drive Stages
Brushless DC ESC (electronic speed controller) half-bridges in drones benefit from the ISA250300C04LMDSXTMA1's compact SO-8 N+P architecture. The P-channel high-side is driven directly from the battery rail, removing the bootstrap capacitor and diode pair, which simplifies gate timing and reduces PCB area in 4-in-1 ESC stacks. The 40V rating covers 6S LiPo battery packs (25.2V nominal) with derating headroom. The Infineon product page explicitly positions this part for drone and robotics motor control.
Recommandé
USB-PD and Battery Load Switch
In USB-PD load-switch and battery-management blocks, the ISA250300C04LMDSXTMA1 provides reverse-current blocking via the P-channel half and high-side switching via the N-channel half, in one SO-8 device. This compact integration reduces PCB footprint versus two discretes and simplifies protection logic. The 40V VDS rating is well above USB-PD 20V source rails, and the 5.9A continuous current matches 100W PD power envelopes. The Infineon OptiMOS 3 process ensures low RDS(on) at logic-level VGS.
Recommandé
Industrial 24V Bus Switching
Factory automation 24V bus switching modules can use the ISA250300C04LMDSXTMA1 as a half-bridge output stage in PLC digital-output cards or sensor power multiplexers. The 40V VDS rating provides 16V of headroom above the 24V nominal industrial rail, comfortably handling inductive kickback and load-dump transients when de-rated per Diagram 2 of the manufacturer datasheet. The 2.5W Tc power dissipation supports sustained 3-4A output without additional heatsinking.
Recommandé
Robotics H-Bridge Actuator Driver
H-bridge DC motor actuator drivers in small robotics and servo controllers benefit from the ISA250300C04LMDSXTMA1's complementary N+P topology, which allows direct gate drive from a single supply without level shifters. This simplifies firmware-controlled PWM generation and reduces timing skew between high-side and low-side transitions. The 5.9A/5.8A continuous ratings suit small DC brushed motors up to ~50W, and the SO-8 footprint supports dense multi-axis actuator arrays.
Recommandé
Buck-Boost and Cuk Converter Stages
Buck-boost and Cuk topologies that need a switch blocking reverse voltage can leverage the ISA250300C04LMDSXTMA1's P-channel half as the high-side blocking element. The complementary architecture supports true bidirectional power flow with simplified control loops. The 40V VDS rating covers 12V/24V automotive and telecom hold-up applications, and the SO-8 package integrates both switches in less than 30 mm^2 board area per channel.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour ISA250300C04LMDSXTMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRF7341GTRPBF | IRFB3207ZPBF | AUIRF7640S2TR |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 (PG-DSO-8-920) | SO-8 - same | TO-220 - differs | SO-8 - same |
| Configuration | Dual N+P complementary | Dual N+N | Single N-channel | Dual N+N (automotive) |
| VDS Rating | 40 V | 55 V | 75 V | 60 V |
| Automotive Grade | No (standard grade) | No | No | Yes (AEC-Q101) |
| Technology | OptiMOS 3 trench | HEXFET planar | HEXFET planar | HEXFET planar |
Principaux différenciateurs
- Complementary N+P topology in a single SO-8 footprint (vs IRF7341GTRPBF (N+N dual))
- OptiMOS 3 trench process for low figure-of-merit (vs IRFB3207ZPBF (planar HEXFET, TO-220))
- Compact SO-8 footprint for dense layouts (vs TO-220 discrete single-channel MOSFETs)
Notes de conception
The ISA250300C04LMDSXTMA1 SO-8 package dissipates up to 2.5W at Tc before derating. For continuous operation above 2W per channel, use an exposed thermal pad with a via array to the opposite copper layer and at least 1 square inch of copper pour per channel. Estimating from the datasheet thermal resistance and a 50C ambient, derated continuous current per channel falls to roughly 4-4.5A on a standard 1-oz 4-layer board. Always validate against your specific PCB layout.
Place the gate-drive resistors (typically 10-100 ohm) within 5mm of the gate pins to suppress parasitic ringing. Keep the high-current drain/source loops as small as possible, using a star-ground configuration for the source returns. The P-channel gate trace should be routed away from the drain switching node to minimize dv/dt-induced turn-on; consider a small gate-source pull-down resistor (10-100 kohm) for fail-safe off-state.
Do not assume the N+P channels have identical VGS(th) or RDS(on) - the datasheet specifies each channel separately. When designing for cold-start at low temperature, ensure VGS(th)max stays within your gate-drive swing margin, as OptiMOS 3 P-channels in particular can require -10V VGS for full enhancement. Confirm the SO-8 pinout against the datasheet Diagram 1 before PCB layout - the N and P channel positions are not interchangeable.
Informations de conformité
RoHS and lead-free status inferred from Infineon product page and DigiKey listing; AEC-Q100 not stated in the verified data. For automotive qualification, evaluate AEC-Q101 parts from the same family.
