ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
MPN: ISCH57N04NM7VSCATMA1 ✓ فعالISCH57N04NM7VSCATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern power electronics, sitting at the lowest level of the power-conversion hierarchy: MOSFET -> power switch -> power semiconductor -> discrete semiconductor. OptiMOS 7 represents Infineon's seventh-generation 40 V platform, replacing OptiMOS 5 and OptiMOS 6 with substantially reduced figure-of-merit (RDS(on)*Qg), allowing either lower conduction loss for the same gate drive, or faster switching for the same thermal budget.
Key features include a drain-source voltage rating of 40 V, a pulsed drain current of 443 A at case temperature, and a power dissipation of 214 W at Tc. The PQFN 5x6 package exposes the die on BOTH the top and bottom surfaces (Dual Side Cooled / DSC), enabling direct attachment to a topside cold plate or PCB inner copper in addition to the standard bottom thermal pad - a critical advantage in motor-drive PCBs where backside thermal headroom is limited.
The device is built on Infineon's advanced 40 V trench process and packaged as PG-WSON-8-2, with source-down lead-frame configuration that minimizes package inductance and source-loop resistance. Optimized gate charge and low RDS(on) make it well-suited to hard-switched and soft-switched topologies at 50-200 kHz without exceeding driver losses.
Typical applications include BLDC/PMSM motor drives for e-mobility, robotic actuators, cordless power tools, e-bike controllers, and 24 V industrial automation drives. The 40 V rating provides ample headroom above 19 V nominal 6S Li-ion packs and 24 V industrial rails, while the low RDS(on) minimizes I²R losses during high-torque PWM commutation.
When designing with this part, ensure the gate drive swings to 10 V (logic-level operation is NOT supported), and provide a Kelvin-source connection where possible to suppress source-inductance-induced turn-on losses. The exposed top metal also requires thermal interface material if a cold plate is used.
This page synthesizes Infineon datasheet parameters, real distributor pricing from DigiKey/Mouser (as of 2026-09-15), and drop-in alternatives - information not consolidated on any single distributor page.
کے لیے ڈراپ اِن متبادل ISCH57N04NM7VSCATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISCH57N04NM7VSCATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), FET Type.
ISC011N04NM7VATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC50N04S5L5R5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQDH35N03LM5SCATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC045N03L5SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISCH57N04NM7VSCATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | OptiMOS 7 (trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Ta | 52 A |
| Pulsed Drain Current (IDM) at Tc | 443 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 214 W |
| آپریٹنگ درجہ حرارت رینج | -55 C to +175 C (typical MOSFET junction range) |
| پیکیج | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame |
| Cooling | Dual Side Cooled (top + bottom thermal interface) |
| RoHS اسٹیٹس | Compliant |
ISCH57N04NM7VSCATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input (10V VGS recommended) |
| پن 2 | Source — Source connection (electrically tied to source pad) |
| پن 3 | Source — Source connection |
| پن 4 | Source — Source connection |
| پن 5 | Source — Source connection |
| پن 6 | Source — Source connection |
| پن 7 | Source — Source connection |
| پن 8 | Drain — Drain connection (electrically tied to top/bottom thermal pad) |
محفوظ آپریٹنگ ایریا (estimated; verify against datasheet)
عام استعمالات
ISCH57N04NM7VSCATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: BLDC / PMSM Motor Drives, Cordless Power Tools, E-Bike / E-Scooter Controllers, Robotic Actuator Drives, 24 V Industrial Automation Drives, Drones / UAV ESCs.
BLDC / PMSM Motor Drives
The ISCH57N04NM7VSCATMA1 is purpose-built by Infineon for BLDC and PMSM motor drives up to ~3 kW per phase. Its OptiMOS 7 40 V trench technology delivers the low RDS(on)*Qg figure-of-merit required for 50-200 kHz PWM commutation, minimizing switching losses that dominate at high fundamental frequencies. The Dual Side Cooled PG-WSON-8-2 package sustains 52 A continuous at Ta and 443 A pulsed at Tc, suiting e-bike, robotic actuator, and cordless power tool drives. Placed in the three-phase inverter bridge as low-side + high-side switches per phase, it replaces discrete TO-220 MOSFETs with 2-3x higher power density.
تجویز کردہ
Cordless Power Tools
Cordless drill, impact driver, and saw drives running from 18-21 V Li-ion packs benefit directly from the ISCH57N04NM7VSCATMA1's 40 V VDS rating and 52 A continuous capability. Infineon's OptiMOS 7 platform cuts conduction losses during high-torque bursts, extending battery runtime by 5-15% versus OptiMOS 5 predecessors in the same footprint. The PG-WSON-8-2 5x6 mm outline fits inside the motor housing next to the stator, where the dual-side-cooled package dissipates heat into both the PCB copper and the metal gear-case. Hard commutation at 20-50 kHz PWM is well within the device's switching-safe operating area.
تجویز کردہ
E-Bike / E-Scooter Controllers
Pedelec and e-scooter motor controllers running from 36 V (10S) or 48 V (13S) battery packs use 40 V-class MOSFETs like the ISCH57N04NM7VSCATMA1 with appropriate transient clamping. The 40 V VDS provides adequate margin for regen-braking inductive spikes when paired with a TVS or active clamp, while the 443 A pulsed rating handles motor-start inrush and hill-climb torque transients. Dual-side cooling is particularly valuable in sealed IP-rated controller enclosures where convective heat transfer is limited; the top of the package can be bonded to the aluminum enclosure for direct thermal path. OptiMOS 7's low Qg keeps gate-drive losses manageable at 25 kHz PWM.
تجویز کردہ
Robotic Actuator Drives
Collaborative-robot joint actuators and drone motor controllers demand high power density in a small footprint - exactly the ISCH57N04NM7VSCATMA1's strength. Its 5x6 mm PQFN outline fits inside integrated motor+drive units where TO-220 or DPAK parts would not. OptiMOS 7's switching figure-of-merit enables 100 kHz+ field-oriented-control loops with sub-microsecond dead-time, improving torque ripple and audible noise. The 443 A pulsed rating covers the worst-case stall-current transient that robotics safety standards (ISO 13849) require the drive to survive without destruction.
تجویز کردہ
24 V Industrial Automation Drives
Industrial 24 V bus servo and stepper drives use 40 V MOSFETs to handle 28 V transient and inductive kick from motor windings. The ISCH57N04NM7VSCATMA1 in its PG-WSON-8-2 Dual Side Cooled package offers Infineon's latest switching performance at a footprint compatible with OptiMOS 5 designs, enabling drop-in upgrades to existing 24 V drive platforms. In conveyor, AGV, and small-CNC axis drives, the part's 214 W Tc power dissipation and 443 A pulsed rating deliver robust short-term overload capability required by IEC 61800 motion-control standards.
تجویز کردہ
Drones / UAV ESCs
Electronic speed controllers (ESCs) for multi-rotor drones benefit from the ISCH57N04NM7VSCATMA1's combination of low RDS(on), small PQFN 5x6 mm footprint, and dual-side-cooled thermal path. Modern 6S (25.2 V) and 12S (50.4 V) Li-Po ESCs use 40 V MOSFETs with active rectification, and this Infineon OptiMOS 7 part handles continuous current up to 52 A at Ta per device - typically used in parallel pairs or triples for 100-150 A ESC ratings. At 25-48 kHz PWM with active freewheeling, the part's low Qg keeps gate-drive losses under 1% of total dissipation, extending flight time by 3-8% versus older MOSFET generations.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISCH57N04NM7VSCATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 | IPC50N04S5L5R5ATMA1 | IQDH35N03LM5SCATMA1 | ISC045N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PQFN 5x6 (PG-WSON-8-2) | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same |
| VDS Rating | 40 V | 40 V | 40 V | 40 V | 30 V | 30 V |
| Technology | OptiMOS 7 (40V trench) | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 logic-level |
| Dual Side Cooled | Yes | No (standard PQFN) | No (standard PQFN) | No (standard PQFN) | Yes (Dual Side Cooled variant) | No (standard PQFN) |
| Application Focus | Motor drives (BLDC, PMSM) | Motor drives (OptiMOS 7) | SMPS / motor drives (OptiMOS 5) | SMPS / motor drives (OptiMOS 5) | Motor drives (30 V OptiMOS 5) | SMPS / logic-level drives |
اہم امتیازی خصوصیات
- Dual Side Cooled thermal path in 5x6 mm PQFN (بمقابلہISC011N04NM7VATMA1)
- OptiMOS 7 7th-generation 40 V trench platform (بمقابلہBSC076N04NDATMA1)
- 40 V VDS covers 6S Li-ion and 24 V industrial rails with margin (بمقابلہIQDH35N03LM5SCATMA1)
ڈیزائن نوٹس
Estimated: the PG-WSON-8-2 Dual Side Cooled package requires thermal interface material (TIM) on BOTH the bottom PCB copper and the top-side cold plate for full rated performance. Without top-side cooling, expect ~40% derating of continuous ID versus the 52 A Ta rating. Use a high-thermal-conductivity gap pad (>=3 W/mK) for the top interface, and keep the exposed pad soldered to at least 100x100 mil of 2 oz copper on each inner PCB layer.
Source-down lead-frame means pins 2-7 are Source; tie them together with wide copper pours on both top and bottom layers to minimize source-loop inductance. Place the gate-driver within 5 mm of the gate pin, use a 10 ohm gate resistor, and add a 100 kohm gate-source pull-down to prevent spurious turn-on during high dV/dt events. Keep the high-side gate-drive loop area under 50 mm^2 to limit ringing below 20% of VGS rating.
This is a 10V VGS part - logic-level drive (3.3V or 5V) will NOT fully enhance it and may cause excessive conduction loss or thermal runaway. Ensure gate drive swings to 10-12V. Also be aware that OptiMOS 7 has very low VGS(th) (~1.5V typical); a floating gate during MCU reset or brown-out can partially turn the device on, so a gate-source pull-down is mandatory.
OptiMOS 7's fast switching (sub-10 ns rise/fall) requires snubber or gate-source capacitance tuning to control EMI. Add a ferrite bead in series with the gate resistor for high-side switches in motor drives, and consider a small RC snubber (10 ohm + 1 nF) across the drain-source if ringing exceeds 30% of VDS. Motor-drive applications may also need a small common-mode choke on the DC bus to meet IEC 61800 EMI limits.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page; halogen-free status not explicitly stated in verified data. Not AEC-Q100 qualified - this is an industrial / consumer-grade MOSFET. For automotive applications, refer to Infineon's separate automotive-grade OptiMOS 7 family.
