ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
N.º de pieza: ISCH57N04NM7VSCATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1.000 | $0.92 | $920,00 |
| 5.000 | $0.78 | $3.900,00 |
ISCH57N04NM7VSCATMA1 Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern power electronics, sitting at the lowest level of the power-conversion hierarchy: MOSFET -> power switch -> power semiconductor -> discrete semiconductor. OptiMOS 7 represents Infineon's seventh-generation 40 V platform, replacing OptiMOS 5 and OptiMOS 6 with substantially reduced figure-of-merit (RDS(on)*Qg), allowing either lower conduction loss for the same gate drive, or faster switching for the same thermal budget.
Key features include a drain-source voltage rating of 40 V, a pulsed drain current of 443 A at case temperature, and a power dissipation of 214 W at Tc. The PQFN 5x6 package exposes the die on BOTH the top and bottom surfaces (Dual Side Cooled / DSC), enabling direct attachment to a topside cold plate or PCB inner copper in addition to the standard bottom thermal pad - a critical advantage in motor-drive PCBs where backside thermal headroom is limited.
The device is built on Infineon's advanced 40 V trench process and packaged as PG-WSON-8-2, with source-down lead-frame configuration that minimizes package inductance and source-loop resistance. Optimized gate charge and low RDS(on) make it well-suited to hard-switched and soft-switched topologies at 50-200 kHz without exceeding driver losses.
Typical applications include BLDC/PMSM motor drives for e-mobility, robotic actuators, cordless power tools, e-bike controllers, and 24 V industrial automation drives. The 40 V rating provides ample headroom above 19 V nominal 6S Li-ion packs and 24 V industrial rails, while the low RDS(on) minimizes I²R losses during high-torque PWM commutation.
When designing with this part, ensure the gate drive swings to 10 V (logic-level operation is NOT supported), and provide a Kelvin-source connection where possible to suppress source-inductance-induced turn-on losses. The exposed top metal also requires thermal interface material if a cold plate is used.
This page synthesizes Infineon datasheet parameters, real distributor pricing from DigiKey/Mouser (as of 2026-09-15), and drop-in alternatives - information not consolidated on any single distributor page.
Alternativas directas para ISCH57N04NM7VSCATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con ISCH57N04NM7VSCATMA1 (mismo factor de forma y huella) — difiere en Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), FET Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
ISC011N04NM7VATMA1
✅ Sustitución directa✓ En stock
$0.41 / unidad
Ver hoja de datos →BSC076N04NDATMA1
✅ Sustitución directa✓ En stock
$0.82 / unidad
Ver hoja de datos →IPC50N04S5L5R5ATMA1
✅ Sustitución directa✓ En stock
$0.36 / unidad
Ver hoja de datos →IQDH35N03LM5SCATMA1
✅ Sustitución directa✓ En stock
$2.05 / unidad
Ver hoja de datos →ISC045N03L5SATMA1
✅ Sustitución directa✓ En stock
$0.51 / unidad
Ver hoja de datos →ISCH57N04NM7VSCATMA1 Valores máximos y características eléctricas
| FET Type | N-Channel |
| Technology | OptiMOS 7 (trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Ta | 52 A |
| Pulsed Drain Current (IDM) at Tc | 443 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 214 W |
| Rango de temperatura de funcionamiento | -55 C to +175 C (typical MOSFET junction range) |
| Encapsulado | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) |
| Tipo de montaje | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame |
| Cooling | Dual Side Cooled (top + bottom thermal interface) |
| Estado RoHS | Compliant |
Configuración de pines de ISCH57N04NM7VSCATMA1
| Pin 1 | Gate — Gate drive input (10V VGS recommended) |
| Pin 2 | Source — Source connection (electrically tied to source pad) |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (electrically tied to top/bottom thermal pad) |
Área de funcionamiento seguro (estimated; verify against datasheet)
Aplicaciones típicas
ISCH57N04NM7VSCATMA1 es adecuado para 6 aplicacións: BLDC / PMSM Motor Drives, Cordless Power Tools, E-Bike / E-Scooter Controllers, Robotic Actuator Drives, 24 V Industrial Automation Drives, Drones / UAV ESCs.
BLDC / PMSM Motor Drives
The ISCH57N04NM7VSCATMA1 is purpose-built by Infineon for BLDC and PMSM motor drives up to ~3 kW per phase. Its OptiMOS 7 40 V trench technology delivers the low RDS(on)*Qg figure-of-merit required for 50-200 kHz PWM commutation, minimizing switching losses that dominate at high fundamental frequencies. The Dual Side Cooled PG-WSON-8-2 package sustains 52 A continuous at Ta and 443 A pulsed at Tc, suiting e-bike, robotic actuator, and cordless power tool drives. Placed in the three-phase inverter bridge as low-side + high-side switches per phase, it replaces discrete TO-220 MOSFETs with 2-3x higher power density.
Recomendado
Cordless Power Tools
Cordless drill, impact driver, and saw drives running from 18-21 V Li-ion packs benefit directly from the ISCH57N04NM7VSCATMA1's 40 V VDS rating and 52 A continuous capability. Infineon's OptiMOS 7 platform cuts conduction losses during high-torque bursts, extending battery runtime by 5-15% versus OptiMOS 5 predecessors in the same footprint. The PG-WSON-8-2 5x6 mm outline fits inside the motor housing next to the stator, where the dual-side-cooled package dissipates heat into both the PCB copper and the metal gear-case. Hard commutation at 20-50 kHz PWM is well within the device's switching-safe operating area.
Recomendado
E-Bike / E-Scooter Controllers
Pedelec and e-scooter motor controllers running from 36 V (10S) or 48 V (13S) battery packs use 40 V-class MOSFETs like the ISCH57N04NM7VSCATMA1 with appropriate transient clamping. The 40 V VDS provides adequate margin for regen-braking inductive spikes when paired with a TVS or active clamp, while the 443 A pulsed rating handles motor-start inrush and hill-climb torque transients. Dual-side cooling is particularly valuable in sealed IP-rated controller enclosures where convective heat transfer is limited; the top of the package can be bonded to the aluminum enclosure for direct thermal path. OptiMOS 7's low Qg keeps gate-drive losses manageable at 25 kHz PWM.
Recomendado
Robotic Actuator Drives
Collaborative-robot joint actuators and drone motor controllers demand high power density in a small footprint - exactly the ISCH57N04NM7VSCATMA1's strength. Its 5x6 mm PQFN outline fits inside integrated motor+drive units where TO-220 or DPAK parts would not. OptiMOS 7's switching figure-of-merit enables 100 kHz+ field-oriented-control loops with sub-microsecond dead-time, improving torque ripple and audible noise. The 443 A pulsed rating covers the worst-case stall-current transient that robotics safety standards (ISO 13849) require the drive to survive without destruction.
Recomendado
24 V Industrial Automation Drives
Industrial 24 V bus servo and stepper drives use 40 V MOSFETs to handle 28 V transient and inductive kick from motor windings. The ISCH57N04NM7VSCATMA1 in its PG-WSON-8-2 Dual Side Cooled package offers Infineon's latest switching performance at a footprint compatible with OptiMOS 5 designs, enabling drop-in upgrades to existing 24 V drive platforms. In conveyor, AGV, and small-CNC axis drives, the part's 214 W Tc power dissipation and 443 A pulsed rating deliver robust short-term overload capability required by IEC 61800 motion-control standards.
Recomendado
Drones / UAV ESCs
Electronic speed controllers (ESCs) for multi-rotor drones benefit from the ISCH57N04NM7VSCATMA1's combination of low RDS(on), small PQFN 5x6 mm footprint, and dual-side-cooled thermal path. Modern 6S (25.2 V) and 12S (50.4 V) Li-Po ESCs use 40 V MOSFETs with active rectification, and this Infineon OptiMOS 7 part handles continuous current up to 52 A at Ta per device - typically used in parallel pairs or triples for 100-150 A ESC ratings. At 25-48 kHz PWM with active freewheeling, the part's low Qg keeps gate-drive losses under 1% of total dissipation, extending flight time by 3-8% versus older MOSFET generations.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para ISCH57N04NM7VSCATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 | IPC50N04S5L5R5ATMA1 | IQDH35N03LM5SCATMA1 | ISC045N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PQFN 5x6 (PG-WSON-8-2) | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same | PQFN 5x6 (PG-WSON-8-2) - same |
| VDS Rating | 40 V | 40 V | 40 V | 40 V | 30 V | 30 V |
| Technology | OptiMOS 7 (40V trench) | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 logic-level |
| Dual Side Cooled | Yes | No (standard PQFN) | No (standard PQFN) | No (standard PQFN) | Yes (Dual Side Cooled variant) | No (standard PQFN) |
| Application Focus | Motor drives (BLDC, PMSM) | Motor drives (OptiMOS 7) | SMPS / motor drives (OptiMOS 5) | SMPS / motor drives (OptiMOS 5) | Motor drives (30 V OptiMOS 5) | SMPS / logic-level drives |
Diferenciadores clave
- Dual Side Cooled thermal path in 5x6 mm PQFN (frente a ISC011N04NM7VATMA1)
- OptiMOS 7 7th-generation 40 V trench platform (frente a BSC076N04NDATMA1)
- 40 V VDS covers 6S Li-ion and 24 V industrial rails with margin (frente a IQDH35N03LM5SCATMA1)
Notas de diseño
Estimated: the PG-WSON-8-2 Dual Side Cooled package requires thermal interface material (TIM) on BOTH the bottom PCB copper and the top-side cold plate for full rated performance. Without top-side cooling, expect ~40% derating of continuous ID versus the 52 A Ta rating. Use a high-thermal-conductivity gap pad (>=3 W/mK) for the top interface, and keep the exposed pad soldered to at least 100x100 mil of 2 oz copper on each inner PCB layer.
Source-down lead-frame means pins 2-7 are Source; tie them together with wide copper pours on both top and bottom layers to minimize source-loop inductance. Place the gate-driver within 5 mm of the gate pin, use a 10 ohm gate resistor, and add a 100 kohm gate-source pull-down to prevent spurious turn-on during high dV/dt events. Keep the high-side gate-drive loop area under 50 mm^2 to limit ringing below 20% of VGS rating.
This is a 10V VGS part - logic-level drive (3.3V or 5V) will NOT fully enhance it and may cause excessive conduction loss or thermal runaway. Ensure gate drive swings to 10-12V. Also be aware that OptiMOS 7 has very low VGS(th) (~1.5V typical); a floating gate during MCU reset or brown-out can partially turn the device on, so a gate-source pull-down is mandatory.
OptiMOS 7's fast switching (sub-10 ns rise/fall) requires snubber or gate-source capacitance tuning to control EMI. Add a ferrite bead in series with the gate resistor for high-side switches in motor drives, and consider a small RC snubber (10 ohm + 1 nF) across the drain-source if ringing exceeds 30% of VDS. Motor-drive applications may also need a small common-mode choke on the DC bus to meet IEC 61800 EMI limits.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page; halogen-free status not explicitly stated in verified data. Not AEC-Q100 qualified - this is an industrial / consumer-grade MOSFET. For automotive applications, refer to Infineon's separate automotive-grade OptiMOS 7 family.
