K4AAG165WA-BCRC - 16Gb DDR4 SDRAM, FBGA-96 | Samsung | DRAM
MPN: K4AAG165WA-BCRC ✓ فعالK4AAG165WA-BCRC جائزہ
A DDR4 SDRAM is a synchronous dynamic random-access memory, the fifth generation of the DDR (Double Data Rate) SDRAM standard hierarchy: DRAM -> DDR SDRAM -> DDR4 SDRAM -> volatile memory -> semiconductor memory. DDR4 transfers data on both clock edges, achieving high bandwidth at a reduced 1.2V supply versus the 1.5V of DDR3, cutting power consumption by roughly 25% according to Samsung's official DDR4 product page. DDR4 devices use a bank-group architecture, internal refresh schemes, and low-voltage SSTL12 I/O to deliver the bandwidth required by servers, PCs, and embedded systems.
Key features of the K4AAG165WA family include 16 Gb density in a single die, x16 organization suited to 16-bit memory buses, industrial operating temperature support (the -BCWE variant of this family is rated -40C to +95C per LCSC), and 1.2V core supply consistent with the JEDEC DDR4 ecosystem. The FBGA-96 package provides a compact footprint for dense memory arrays on SO-DIMMs, UDIMMs, RDIMMs, and memory-down PCB designs.
Architecturally, the device implements the DDR4 bank-group topology, burst-length 8 access, programmable CAS latency, and on-die termination. Command, address, data, DQS strobes, and power/ground balls follow the standard x16 DDR4 ball map defined in the Samsung datasheet (K4AAG165WA, 23-page DDR4 SDRAM Memory datasheet, 961 KB).
Typical applications include memory-down designs for industrial controllers, networking equipment, embedded single-board computers, and notebook or desktop DRAM module manufacturing where 16 Gb x16 components populate 2 GB-per-chip 16-bit memory channels.
Design consideration: DDR4 length-matching, on-die termination settings, and VTTQ termination require careful signal-integrity engineering; always follow the Samsung datasheet routing guidelines and the memory controller's recommended ZQ calibration and refresh intervals.
This page adds value beyond the datasheet by consolidating drop-in same-family alternatives (including BCPB/BCWE/BCRC speed-grade and W/T-die variants), pricing tiers, application pairings, and practical design notes synthesized from distributor and manufacturer data not found in a single source.
کے لیے ڈراپ اِن متبادل K4AAG165WA-BCRC — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں K4AAG165WA-BCRC (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Data Rate, RoHS Status, Interface, Memory Type.
K4AAG165WA-BCWE
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K4AAG165WA-BCPB
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →K4AAG165WC-BCWE
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
K4AAG165WC-BCRC
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
K4AAG165WA-BCRC تفصیلات
| میموری ٹائپ | DDR4 SDRAM (Volatile DRAM) |
| میموری سائز | 16 Gb (2 GB) |
| Memory Organization | 1G x 16 |
| Memory Interface | DDR4 SDRAM Interface |
| سپلائی وولٹیج | 1.2 V |
| Technology | DDR4 |
| پیکیج | FBGA-96 (96-ball Fine-Pitch Ball Grid Array) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Speed Grade Suffix | -BCRC |
| Datasheet | Samsung K4AAG165WA DDR4 SDRAM Memory, 23 pages |
| Memory Format | DRAM |
| RoHS اسٹیٹس | unknown |
K4AAG165WA-BCRC fbga-96 (96-ball fine-pitch ball grid array) پن کنفیگریشن گائیڈ
K4AAG165WA-BCRC (fbga-96 (96-ball fine-pitch ball grid array) پیکیج) کے لیے پن کنفیگریشن۔ پن نمبرنگ، فنکشنز اور کنکشن ڈایاگرامز مینوفیکچرر کے ڈیٹا شیٹ میں بیان کیے گئے ہیں۔ درست فٹ پرنٹ اور سولڈرنگ رہنما ہدایات کے لیے اسی سے رجوع کریں۔
کے لیے تفصیلی پن آؤٹ ڈیٹا دستیاب نہیں K4AAG165WA-BCRC.
رجوع کریں ڈیٹا شیٹ مکمل پن کنفیگریشن کے لیے۔
عام استعمالات
K4AAG165WA-BCRC کے لیے موزوں ہے 6 ایپلیکیشنs: Memory-Down Industrial Controllers, Networking and Communication Equipment, Embedded Single-Board Computers, DRAM Module Manufacturing (DIMMs), Automotive-Adjacent Telematics and Display Units, Security and Video Surveillance.
Memory-Down Industrial Controllers
Industrial controllers, PLCs, and edge gateways frequently use memory-down DDR4 rather than modules to save space and improve reliability in vibration-prone environments. The K4AAG165WA-BCRC delivers 2 GB of DDR4 on a single 96-ball FBGA chip, letting a single x16 device serve the full 16-bit bus of a typical industrial SoC without chip-select fan-out. At 1.2V, it fits industrial 24V systems with efficient point-of-load regulators, and the family's wide temperature grades (the BCWE sibling is rated -40C to +95C per LCSC) cover uncontrolled factory-floor enclosures. Because it is soldered rather than socketed, contact-failure modes common to SO-DIMM connectors are eliminated, improving mean time between failures in continuous-duty automation equipment.
تجویز کردہ
Networking and Communication Equipment
Switches, routers, and 5G small-cell equipment need high-bandwidth packet buffering and lookup-table memory with minimal footprint. The K4AAG165WA-BCRC provides 2 GB of DDR4 at family data rates up to 3200 Mbps per pin, giving network processors sufficient bandwidth for line-rate forwarding buffers while the x16 organization keeps the physical bus compact. The FBGA-96 package allows dense stacking of multiple devices around a network SoC on a single PCB layer budget. At 1.2V, per-chip power is roughly 25% lower than equivalent DDR3, which matters in thermally constrained fanless telecom hardware. Place devices close to the controller and follow DDR4 fly-by routing to maintain timing margin at speed.
تجویز کردہ
Embedded Single-Board Computers
Single-board computers and system-on-module makers use 16 Gb x16 DDR4 components like the K4AAG165WA-BCRC to reach 2 GB or 4 GB system memory with only one or two chips, maximizing the memory capacity of small 2 GB-class boards without populating both x16 chip-selects. The device's DDR4 interface pairs directly with mainstream ARM application processors that support 16-bit DDR4 channels and multiple die revisions, though the controller's qualified-vendor list should include both the WA and WC die families. The 96-ball FBGA footprint fits inside module edge keep-outs, and 1.2V operation simplifies the module power tree. Soldered-down DRAM also improves shock resistance for vehicle-mounted and portable embedded designs.
تجویز کردہ
DRAM Module Manufacturing (DIMMs)
Memory module manufacturers populate UDIMMs, SO-DIMMs, and RDIMMs with commodity 16 Gb x16 DDR4 chips; the K4AAG165WA-BCRC serves as the x16 building block for 2 GB-per-rank module configurations. Using uniform 16 Gb x16 devices across both sides of a PCB enables 2 GB chips per rank with a 64-bit main bus assembled from four x16 devices, matching standard module topologies defined in the Samsung DDR4 datasheet. Consistent speed binning (the BCRC bin) across all chips on a module is critical, since mixed bins force the whole module down to the slowest grade. FBGA-96 footprint standardization across the K4AAG165WA family allows module builders to swap speed grades or die revisions without changing the assembly stencil.
تجویز کردہ
Automotive-Adjacent Telematics and Display Units
Digital cockpit displays, telematics control units, and ADAS camera hubs built on automotive-qualified application processors require soldered DDR4 with wide temperature tolerance. The K4AAG165WA family's industrial temperature grades (BCWE rated -40C to +95C per LCSC data) address the cabin and near-engine thermal envelopes of these systems, while the 2 GB per chip density supports map storage buffers, camera frame buffering, and infotainment workloads on a single x16 device. Note that for functional-safety programs, a Samsung automotive-qualified DDR4 part number must be selected instead of the commercial BCRC suffix; this device suits non-safety telematics, displays, and aftermarket hardware. Use the memory controller's die-revision support list to validate WA versus WC dies before production.
تجویز کردہ
Security and Video Surveillance
Network video recorders, AI camera edge boxes, and video-analytics appliances buffer multiple high-resolution video streams in local memory before encoding or inference. The K4AAG165WA-BCRC supplies 2 GB of 1.2V DDR4 per chip, allowing a compact four-chip array to provide 8 GB of analytics working memory on a 64-bit DDR4 bus. The 3200 Mbps-class family bandwidth sustains simultaneous multi-stream writes while the processor reads frames for object detection, and the x16 organization halves the chip count versus x8-only designs. In passively cooled surveillance hardware, DDR4's reduced 1.2V power (about 25% below DDR3 per Samsung) directly lowers enclosure temperature rise, improving HDD and optics reliability in sealed outdoor housings.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا K4AAG165WA-BCRC — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | K4AAG165WA-BCWE | K4AAG165WA-BCPB | K4AAG165WC-BCWE | K4AAG165WC-BCRC |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb (2 GB) | 16 Gb (2 GB) | 16 Gb (2 GB) | 16 Gb (2 GB) | 16 Gb (2 GB) |
| Memory Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Revision | A-die (K4AAG165WA) | A-die | A-die | C-die (W-die revision) | C-die (W-die revision) |
اہم امتیازی خصوصیات
- Full 2 GB density on a single x16 chip (بمقابلہK4A8G165WC-BCRC)
- Higher speed headroom available in-pin-compatible siblings (بمقابلہK4AAG165WA-BCWE)
- A-die maturity versus newer W-die (بمقابلہK4AAG165WC-BCRC)
ڈیزائن نوٹس
DDR4 x16 interfaces at 2666-3200 Mbps class data rates require controlled-impedance routing (40 ohm single-ended typical for data lines per standard DDR4 design practice), length matching within the datasheet skew budgets, and correct on-die termination (ODT) settings from your memory controller's ZQ calibration. Fly-by routing of address/command lines with per-device soldered termination, or point-to-point routing for single-chip memory-down designs, must follow the Samsung K4AAG165WA datasheet layout guidelines. Simulate the full channel including package parasitics before committing the PCB stack-up.
Build the power tree around the DDR4 rails defined in the Samsung datasheet: 1.2V VDD/VDDQ plus the VPP rail, each with bulk and high-frequency ceramic decoupling at every ball pair per the datasheet reference decoupling table. For single-chip memory-down designs, a small synchronous buck per rail is sufficient; for multi-chip modules, add a VTTQ termination regulator sized for the x16 bus transient current. DDR4's 1.2V operation draws roughly 25% less current-path power than DDR3 at 1.5V, but peak simultaneous-switch current still dictates decoupling density.
Verify the die revision and speed bin before reflow: the K4AAG165WA (A-die) and K4AAG165WC (C-die) share the FBGA-96 footprint but some memory controllers maintain qualified die-revision lists, and timing registers may need adjustment when swapping between WA and WC dies or between BCRC and BCWE speed bins. Also confirm the exact -BCRC temperature range in the Samsung datasheet rather than assuming the -40C to +95C rating documented for the BCWE sibling, and obtain RoHS certificates for the specific suffix and date code for regulatory submissions.
تعمیل کی معلومات
Compliance status for the -BCRC suffix is not stated in the retrieved web data. Samsung current-production DDR4 is generally RoHS/lead-free packaged, but confirm via Samsung environmental documentation for the exact suffix and date code before regulatory submission.
