MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP
MPN: MRF6P9220HR3 ✓ فعالMRF6P9220HR3 جائزہ
A radio-frequency power MOSFET is a specialized transistor built on a lateral DMOS or LDMOS structure, optimized to deliver high continuous-wave and modulated RF power with high gain and efficiency into a 50-ohm load. It sits within the broader taxonomy of RF power transistors, which in turn are a subset of discrete power semiconductors; LDMOS is the dominant technology for cellular base-station PA outputs above 1 GHz because it offers an excellent compromise between RF gain, efficiency, thermal conductivity, and ruggedness versus Si BJT or GaAs alternatives.
Key specifications include a 28 VDC drain supply, 47 W typical output power, 20 dB gain, and a 1.6 A typical quiescent bias current. The lateral N-channel enhancement-mode structure provides high breakdown voltage and is internally matched for common-source operation, simplifying board-level integration. The NI-860C3 package features a low-inductance ceramic body with a flange-mount flange for direct attachment to a heatsink or copper spreader, critical for dissipating the high thermal load at 47 W RF output.
Architecturally, the device uses a laterally diffused metal-oxide-semiconductor process with optimized source-via grounding and a low-loss lead frame to minimize parasitic inductance at 880 MHz. The high gain-bandwidth product allows a single stage to deliver 47 W with reasonable gain flatness across the 700-1000 MHz cellular bands, reducing the number of driver stages required in a multi-amplifier lineup.
Primary applications include single-carrier W-CDMA and N-CDMA base-station power amplifiers operating in the 869-894 MHz cellular downlink band, industrial RF heating at sub-GHz frequencies, and broadband laboratory RF amplifiers. The part is rated for continuous commercial service with appropriate thermal management. Designers should bias the gate near 2.8-3.0 V to set quiescent current in class-AB operation and must provide adequate heat-sinking through the metal flange; thermals are the dominant reliability limiter for this part.
This page synthesizes the official NXP datasheet, current distributor pricing and stock, drop-in replacement options, and practical design notes (bias networks, thermal management, sequencing) not consolidated on the distributor catalog page.
کے لیے ڈراپ اِن متبادل MRF6P9220HR3 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MRF6P9220HR3 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Configuration, Mounting Type, Technology, Transistor Type, Package.
MRFE6P9220HR3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6P9220HR5
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6P9220HR3 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6P9220HR3 |
| ٹرانزسٹر کی قسم | N-Channel Lateral MOSFET (RF Power) |
| Technology | LDMOS, enhancement-mode |
| Drain-Source Voltage (VDS) | 28 V typical |
| Test Frequency | 880 MHz |
| Typical Output Power (Pout) | 47 W (average, N-CDMA) |
| Power Gain (Gp) | 20 dB typical |
| Quiescent Bias Current (IDQ) | 1.6 A typical |
| Operating Frequency Range | Up to 1000 MHz (broadband, up to ~1 GHz typical) |
| پیکیج | NI-860C3 (ceramic, flange-mount) |
| Configuration | Common-source, single-ended |
| ماؤنٹنگ ٹائپ | Surface/chassis mount (flange to heatsink) |
| Application | Base-station PA, N-CDMA, industrial RF |
| Operating Mode | Enhancement mode |
MRF6P9220HR3 پن کنفیگریشن
| پن 1 | DRAIN — RF output / drain (flange bolt-down is source-ground) |
| پن 2 | GATE — Gate input (DC bias isolated through series resistor) |
| پن 3 | FLANGE/SOURCE — Source-ground return via metal flange (bolted to heatsink) |
محفوظ آپریٹنگ ایریا - DC
عام استعمالات
MRF6P9220HR3 کے لیے موزوں ہے 6 ایپلیکیشنs: Cellular Base-Station Power Amplifier (N-CDMA 880 MHz), W-CDMA / LTE Macro-Cell Downlink PA, Industrial / Scientific Sub-GHz RF Heating, Broadband Laboratory RF Power Amplifier, Two-Way Radio Repeater / Public-Safety PA, RF Plasma and Drying Generator (CW Sub-GHz).
Cellular Base-Station Power Amplifier (N-CDMA 880 MHz)
The MRF6P9220HR3 is the canonical final-stage LDMOS for single-N-CDMA cellular base-station PAs operating in the 869-894 MHz downlink band from a 28 V bus. Its 47 W average Pout and 20 dB typical gain at 880 MHz let one common-source stage drive the antenna from a few-hundred-mW driver, and the lateral N-channel architecture delivers the high linearity required for CDMA modulation. Per NXP datasheet MRF6P9220H, broadband tuning up to 1 GHz is supported, simplifying multi-band cabinet designs. The NI-860C3 ceramic flange is bolted to the PA chassis heatsink for low thermal resistance at 47 W continuous output.
تجویز کردہ
W-CDMA / LTE Macro-Cell Downlink PA
Although characterized under N-CDMA, the MRF6P9220HR3's 28 V LDMOS architecture is broadly usable as the final LDMOS stage in 900 MHz W-CDMA and LTE macro-cell downlink PAs, where its high gain reduces driver-stage count. The 880 MHz characterization is representative of 925-960 MHz operation with modest re-tuning of the output matching network. NXP design notes emphasize the lateral N-channel device's high linear gain and the broadband tuning headroom needed for multi-carrier LTE signals. The NI-860C3 flange mount integrates into standard macro-cell PA chassis with low junction-to-coolant thermal resistance.
تجویز کردہ
Industrial / Scientific Sub-GHz RF Heating
Beyond cellular, the MRF6P9220HR3 supports 700-1000 MHz industrial RF heating and scientific plasma-driver applications that benefit from 47 W continuous CW power into a non-50-ohm load. The 28 V supply and high gain make it a one-stage solution for many material-processing and RF dryer designs at sub-GHz frequencies. NXP datasheet MRF6P9220H confirms broadband capability up to 1 GHz, allowing simplified wideband matching networks. Designers must add harmonic filtering on the output and a directional coupler for closed-loop power control.
تجویز کردہ
Broadband Laboratory RF Power Amplifier
The MRF6P9220HR3 serves as the final stage in broadband laboratory RF amplifiers covering the 700-1000 MHz cellular research bands, delivering 47 W average Pout with 20 dB gain from a 28 V bench supply. Its LDMOS architecture provides the ruggedness needed for operation into mismatched loads (VSWR up to 5:1 with reduced drive) encountered on the test bench, an important feature for instrumentation amplifiers. NXP datasheet MRF6P9220H includes load-pull contours that let designers predict gain and efficiency for arbitrary load impedances. The ceramic NI-860C3 package provides a stable thermal baseline for repeatable measurement results.
تجویز کردہ
Two-Way Radio Repeater / Public-Safety PA
Public-safety and amateur-radio repeaters operating near 900 MHz can use the MRF6P9220HR3 as the linear final stage driven from a low-power repeater exciter. The 28 V LDMOS gain and high linearity are well matched to FM/C4FM and DMR modulation envelopes in the 800-900 MHz range. Per NXP datasheet MRF6P9220H, broadband operation up to 1 GHz supports multiple public-safety bands with retuning only. The flange-mount NI-860C3 package simplifies thermal integration into repeater racks with forced-air cooling.
تجویز کردہ
RF Plasma and Drying Generator (CW Sub-GHz)
Continuous-wave RF plasma generators for semiconductor etch and industrial drying in the 800-900 MHz ISM band can use the MRF6P9220HR3 as the final CW LDMOS stage, taking advantage of the part's 47 W output and 28 V supply high efficiency. The lateral N-channel structure with ceramic NI-860C3 flange is rated for continuous RF operation, and NXP characterization under N-CDMA (which has a non-zero duty cycle) gives a reasonable estimate of CW performance with proper thermal design. Designers should include a directional coupler and arc detection for plasma-load protection, as the part's ruggedness is helpful but not unlimited into severely mismatched plasma loads.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MRF6P9220HR3 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MRFE6P9220HR3 | MRF6P9220HR5 |
|---|---|---|---|
| Package | NI-860C3 (ceramic flange-mount) | NI-860C3 (same) | NI-860C3 (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Drain Voltage | 28 V | 28 V | 28 V |
| Output Power (Pout) | 47 W avg | 47 W avg | 47 W avg |
| Test Frequency | 880 MHz | 880 MHz | 880 MHz |
| Power Gain (Gp) | 20 dB | 20 dB | 20 dB |
| Transistor Technology | LDMOS lateral N-channel | LDMOS lateral N-channel | LDMOS lateral N-channel |
| Configuration | Common-source single-ended | Common-source single-ended | Common-source single-ended |
| Lifecycle Status | Active (legacy generation) | Active (current generation) | Active (tape-and-reel variant) |
| Drop-in Replacement | N/A (this is the original) | Yes (NXP official E-series successor per PCN12895) | Yes (same die, R5 packaging) |
اہم امتیازی خصوصیات
- Official NXP E-series successor in the same footprint (بمقابلہMRFE6P9220HR3)
- R5 suffix enables tape-and-reel for high-volume assembly (بمقابلہMRF6P9220HR5)
- Reference design legacy used in 28 V base-station PAs (بمقابلہMRFE6P9220HR3)
ڈیزائن نوٹس
Estimated: at the 47 W RF output, the MRF6P9220HR3 dissipates roughly 80 W internally at 28 V (typical PA efficiency ~37%), which must be removed through the NI-860C3 flange. Per NXP datasheet MRF6P9220H, the junction-to-flange thermal resistance must be combined with a heatsink rated for the cabinet's airflow to keep Tj below the 200 C reliability limit; a thermal interface material with conductivity >1 W/mK and a torque of 0.5-1 N·m on the mounting screws is recommended. Inadequate thermal design is the dominant failure mode for LDMOS PAs in continuous base-station service.
Sequencing must apply gate bias before the 28 V drain rail so that the MRF6P9220HR3 does not see full VDS without quiescent IDQ; reversing the order can trigger high-stress standing-wave conditions during startup. Add a current-sense resistor on the source to detect load mismatch or oscillation, and verify input stability with a 50-ohm gate termination; LDMOS is prone to parametric oscillation at low quiescent current. Per NXP design guidance, gate-source Zener protection and drain RF-choke decoupling are recommended for production amplifiers.
Estimate board layout: place the MRF6P9220HR3 with the shortest possible 50-ohm microstrip from drain to the harmonic filter and use coplanar waveguide with a continuous ground plane on the substrate under the part flange. Keep the gate bias trace physically separated from the drain trace and decouple the bias rail with a 100 nF ceramic plus a 10 uF tantalum capacitor mounted within 5 mm of the package lead. According to NXP MRF6P9220H application circuitry, mounting holes for the flange must stitch to the inner ground plane with at least 4 ground vias each to suppress common-mode resonances.
Use source-via stitching around the input matching network to suppress common-mode currents that can otherwise drive instability in class-AB LDMOS stages; place 4-8 vias on a 2 mm pitch around each side of the gate trace. Per NXP datasheet MRF6P9220H, the device exhibits high gain at 880 MHz and is sensitive to gate-source loop inductance; a multi-finger gate resistor or ferrite bead is sometimes necessary. Manufacturers recommend load-pull verification before committing to a layout, especially for broadband applications spanning 700-1000 MHz.
تعمیل کی معلومات
Legacy NXP/Freescale base-station RF power MOSFETs in the NI-860C3 ceramic flange-mount package have specific material exemption statements (per RoHS high-lead ceramic die-attach exemptions). Confirm RoHS/REACH status directly with NXP for production designs; the MRFE6P9220HR3 successor may have an updated compliance profile.
