MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP
N.º de pieza: MRF6P9220HR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $73.2 | $732,00 |
| 100 | $67.8 | $6.780,00 |
| 250 | $64.5 | $16.125,00 |
| 500 | $61.2 | $30.600,00 |
| 1.000 | $58.4 | $58.400,00 |
MRF6P9220HR3 Descripción general
A radio-frequency power MOSFET is a specialized transistor built on a lateral DMOS or LDMOS structure, optimized to deliver high continuous-wave and modulated RF power with high gain and efficiency into a 50-ohm load. It sits within the broader taxonomy of RF power transistors, which in turn are a subset of discrete power semiconductors; LDMOS is the dominant technology for cellular base-station PA outputs above 1 GHz because it offers an excellent compromise between RF gain, efficiency, thermal conductivity, and ruggedness versus Si BJT or GaAs alternatives.
Key specifications include a 28 VDC drain supply, 47 W typical output power, 20 dB gain, and a 1.6 A typical quiescent bias current. The lateral N-channel enhancement-mode structure provides high breakdown voltage and is internally matched for common-source operation, simplifying board-level integration. The NI-860C3 package features a low-inductance ceramic body with a flange-mount flange for direct attachment to a heatsink or copper spreader, critical for dissipating the high thermal load at 47 W RF output.
Architecturally, the device uses a laterally diffused metal-oxide-semiconductor process with optimized source-via grounding and a low-loss lead frame to minimize parasitic inductance at 880 MHz. The high gain-bandwidth product allows a single stage to deliver 47 W with reasonable gain flatness across the 700-1000 MHz cellular bands, reducing the number of driver stages required in a multi-amplifier lineup.
Primary applications include single-carrier W-CDMA and N-CDMA base-station power amplifiers operating in the 869-894 MHz cellular downlink band, industrial RF heating at sub-GHz frequencies, and broadband laboratory RF amplifiers. The part is rated for continuous commercial service with appropriate thermal management. Designers should bias the gate near 2.8-3.0 V to set quiescent current in class-AB operation and must provide adequate heat-sinking through the metal flange; thermals are the dominant reliability limiter for this part.
This page synthesizes the official NXP datasheet, current distributor pricing and stock, drop-in replacement options, and practical design notes (bias networks, thermal management, sequencing) not consolidated on the distributor catalog page.
Alternativas directas para MRF6P9220HR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRF6P9220HR3 (mismo factor de forma y huella) — difiere en Configuration, Mounting Type, Technology, Transistor Type, Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRFE6P9220HR3
✅ Sustitución directa✓ En stock
$232.2 / unidad
Ver hoja de datos →MRF6P9220HR5
✅ Sustitución directa✓ En stock
$91.2 / unidad
Ver hoja de datos →MRF6P9220HR3 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6P9220HR3 |
| Tipo de transistor | N-Channel Lateral MOSFET (RF Power) |
| Technology | LDMOS, enhancement-mode |
| Drain-Source Voltage (VDS) | 28 V typical |
| Test Frequency | 880 MHz |
| Typical Output Power (Pout) | 47 W (average, N-CDMA) |
| Power Gain (Gp) | 20 dB typical |
| Quiescent Bias Current (IDQ) | 1.6 A typical |
| Operating Frequency Range | Up to 1000 MHz (broadband, up to ~1 GHz typical) |
| Encapsulado | NI-860C3 (ceramic, flange-mount) |
| Configuration | Common-source, single-ended |
| Tipo de montaje | Surface/chassis mount (flange to heatsink) |
| Application | Base-station PA, N-CDMA, industrial RF |
| Operating Mode | Enhancement mode |
Configuración de pines de MRF6P9220HR3
| Pin 1 | DRAIN — RF output / drain (flange bolt-down is source-ground) |
| Pin 2 | GATE — Gate input (DC bias isolated through series resistor) |
| Pin 3 | FLANGE/SOURCE — Source-ground return via metal flange (bolted to heatsink) |
Área de funcionamiento seguro - DC
Aplicaciones típicas
MRF6P9220HR3 es adecuado para 6 aplicacións: Cellular Base-Station Power Amplifier (N-CDMA 880 MHz), W-CDMA / LTE Macro-Cell Downlink PA, Industrial / Scientific Sub-GHz RF Heating, Broadband Laboratory RF Power Amplifier, Two-Way Radio Repeater / Public-Safety PA, RF Plasma and Drying Generator (CW Sub-GHz).
Cellular Base-Station Power Amplifier (N-CDMA 880 MHz)
The MRF6P9220HR3 is the canonical final-stage LDMOS for single-N-CDMA cellular base-station PAs operating in the 869-894 MHz downlink band from a 28 V bus. Its 47 W average Pout and 20 dB typical gain at 880 MHz let one common-source stage drive the antenna from a few-hundred-mW driver, and the lateral N-channel architecture delivers the high linearity required for CDMA modulation. Per NXP datasheet MRF6P9220H, broadband tuning up to 1 GHz is supported, simplifying multi-band cabinet designs. The NI-860C3 ceramic flange is bolted to the PA chassis heatsink for low thermal resistance at 47 W continuous output.
Recomendado
W-CDMA / LTE Macro-Cell Downlink PA
Although characterized under N-CDMA, the MRF6P9220HR3's 28 V LDMOS architecture is broadly usable as the final LDMOS stage in 900 MHz W-CDMA and LTE macro-cell downlink PAs, where its high gain reduces driver-stage count. The 880 MHz characterization is representative of 925-960 MHz operation with modest re-tuning of the output matching network. NXP design notes emphasize the lateral N-channel device's high linear gain and the broadband tuning headroom needed for multi-carrier LTE signals. The NI-860C3 flange mount integrates into standard macro-cell PA chassis with low junction-to-coolant thermal resistance.
Recomendado
Industrial / Scientific Sub-GHz RF Heating
Beyond cellular, the MRF6P9220HR3 supports 700-1000 MHz industrial RF heating and scientific plasma-driver applications that benefit from 47 W continuous CW power into a non-50-ohm load. The 28 V supply and high gain make it a one-stage solution for many material-processing and RF dryer designs at sub-GHz frequencies. NXP datasheet MRF6P9220H confirms broadband capability up to 1 GHz, allowing simplified wideband matching networks. Designers must add harmonic filtering on the output and a directional coupler for closed-loop power control.
Recomendado
Broadband Laboratory RF Power Amplifier
The MRF6P9220HR3 serves as the final stage in broadband laboratory RF amplifiers covering the 700-1000 MHz cellular research bands, delivering 47 W average Pout with 20 dB gain from a 28 V bench supply. Its LDMOS architecture provides the ruggedness needed for operation into mismatched loads (VSWR up to 5:1 with reduced drive) encountered on the test bench, an important feature for instrumentation amplifiers. NXP datasheet MRF6P9220H includes load-pull contours that let designers predict gain and efficiency for arbitrary load impedances. The ceramic NI-860C3 package provides a stable thermal baseline for repeatable measurement results.
Recomendado
Two-Way Radio Repeater / Public-Safety PA
Public-safety and amateur-radio repeaters operating near 900 MHz can use the MRF6P9220HR3 as the linear final stage driven from a low-power repeater exciter. The 28 V LDMOS gain and high linearity are well matched to FM/C4FM and DMR modulation envelopes in the 800-900 MHz range. Per NXP datasheet MRF6P9220H, broadband operation up to 1 GHz supports multiple public-safety bands with retuning only. The flange-mount NI-860C3 package simplifies thermal integration into repeater racks with forced-air cooling.
Recomendado
RF Plasma and Drying Generator (CW Sub-GHz)
Continuous-wave RF plasma generators for semiconductor etch and industrial drying in the 800-900 MHz ISM band can use the MRF6P9220HR3 as the final CW LDMOS stage, taking advantage of the part's 47 W output and 28 V supply high efficiency. The lateral N-channel structure with ceramic NI-860C3 flange is rated for continuous RF operation, and NXP characterization under N-CDMA (which has a non-zero duty cycle) gives a reasonable estimate of CW performance with proper thermal design. Designers should include a directional coupler and arc detection for plasma-load protection, as the part's ruggedness is helpful but not unlimited into severely mismatched plasma loads.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRF6P9220HR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRFE6P9220HR3 | MRF6P9220HR5 |
|---|---|---|---|
| Package | NI-860C3 (ceramic flange-mount) | NI-860C3 (same) | NI-860C3 (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Drain Voltage | 28 V | 28 V | 28 V |
| Output Power (Pout) | 47 W avg | 47 W avg | 47 W avg |
| Test Frequency | 880 MHz | 880 MHz | 880 MHz |
| Power Gain (Gp) | 20 dB | 20 dB | 20 dB |
| Transistor Technology | LDMOS lateral N-channel | LDMOS lateral N-channel | LDMOS lateral N-channel |
| Configuration | Common-source single-ended | Common-source single-ended | Common-source single-ended |
| Lifecycle Status | Active (legacy generation) | Active (current generation) | Active (tape-and-reel variant) |
| Drop-in Replacement | N/A (this is the original) | Yes (NXP official E-series successor per PCN12895) | Yes (same die, R5 packaging) |
Diferenciadores clave
- Official NXP E-series successor in the same footprint (frente a MRFE6P9220HR3)
- R5 suffix enables tape-and-reel for high-volume assembly (frente a MRF6P9220HR5)
- Reference design legacy used in 28 V base-station PAs (frente a MRFE6P9220HR3)
Notas de diseño
Estimated: at the 47 W RF output, the MRF6P9220HR3 dissipates roughly 80 W internally at 28 V (typical PA efficiency ~37%), which must be removed through the NI-860C3 flange. Per NXP datasheet MRF6P9220H, the junction-to-flange thermal resistance must be combined with a heatsink rated for the cabinet's airflow to keep Tj below the 200 C reliability limit; a thermal interface material with conductivity >1 W/mK and a torque of 0.5-1 N·m on the mounting screws is recommended. Inadequate thermal design is the dominant failure mode for LDMOS PAs in continuous base-station service.
Sequencing must apply gate bias before the 28 V drain rail so that the MRF6P9220HR3 does not see full VDS without quiescent IDQ; reversing the order can trigger high-stress standing-wave conditions during startup. Add a current-sense resistor on the source to detect load mismatch or oscillation, and verify input stability with a 50-ohm gate termination; LDMOS is prone to parametric oscillation at low quiescent current. Per NXP design guidance, gate-source Zener protection and drain RF-choke decoupling are recommended for production amplifiers.
Estimate board layout: place the MRF6P9220HR3 with the shortest possible 50-ohm microstrip from drain to the harmonic filter and use coplanar waveguide with a continuous ground plane on the substrate under the part flange. Keep the gate bias trace physically separated from the drain trace and decouple the bias rail with a 100 nF ceramic plus a 10 uF tantalum capacitor mounted within 5 mm of the package lead. According to NXP MRF6P9220H application circuitry, mounting holes for the flange must stitch to the inner ground plane with at least 4 ground vias each to suppress common-mode resonances.
Use source-via stitching around the input matching network to suppress common-mode currents that can otherwise drive instability in class-AB LDMOS stages; place 4-8 vias on a 2 mm pitch around each side of the gate trace. Per NXP datasheet MRF6P9220H, the device exhibits high gain at 880 MHz and is sensitive to gate-source loop inductance; a multi-finger gate resistor or ferrite bead is sometimes necessary. Manufacturers recommend load-pull verification before committing to a layout, especially for broadband applications spanning 700-1000 MHz.
Información de cumplimiento
Legacy NXP/Freescale base-station RF power MOSFETs in the NI-860C3 ceramic flange-mount package have specific material exemption statements (per RoHS high-lead ceramic die-attach exemptions). Confirm RoHS/REACH status directly with NXP for production designs; the MRFE6P9220HR3 successor may have an updated compliance profile.
