MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP
MPN: MRF6S27015NR1 ✓ فعالMRF6S27015NR1 جائزہ
RF power MOSFETs are a class of discrete semiconductor devices designed specifically for high-frequency amplification of modulated signals such as W-CDMA, LTE, and WiMAX. They differ from small-signal MOSFETs in using a lateral N-channel structure with very low parasitic capacitance and inductance, allowing efficient operation into the multi-GHz range. They occupy a place in the hierarchy: RF power MOSFET -> RF power transistor -> discrete semiconductor -> semiconductor device.
Key specifications of the MRF6S27015NR1 include a maximum drain-source voltage of 68 V, a typical quiescent drain current of 160 mA at 28 V, an operating frequency range of 2300-2700 MHz, an output power of 3 W average in W-CDMA with 14 dB power gain, and a ruggedness capability against 10:1 VSWR mismatch at its rated operating voltage. The device is built on NXP's HV6 lateral MOSFET process, optimized for Doherty amplifier configurations in macro-cell base-station radios.
Architecturally, the MRF6S27015NR1 uses a high-breakdown lateral DMOS cell layout that provides high drain efficiency (~30% at 2.6 GHz into W-CDMA) and excellent thermal coupling between the active die region and the plastic over-mold. The matched input and 50-ohm-compatible output impedance simplifies PCB integration, allowing engineers to drop the part into existing 2.6 GHz L-PAMR or small-cell reference designs with minimal retuning.
Typical applications include W-CDMA, LTE, and WiMAX base-station transmitter final stages, particularly the carrier and peaking devices in a Doherty configuration. Its 3 W average output capability and high gain also make it suitable for driver stages in higher-power macro-cell amplifiers, repeater units, and small-cell pico-cell radios operating in the 2.3-2.7 GHz wireless bands.
The principal design trade-off is thermal: 28 V operation at 3 W average gives rise to roughly 7-10 W peak dissipation during W-CDMA peaks (PAPR ~10 dB). Engineers must provide adequate copper thermal vias beneath the TO-270-2 package, sized to keep the junction below 150 C during worst-case conditions.
This page synthesizes distributor pricing, drop-in and pin-compatible alternatives, and practical thermal/RF layout notes beyond what the manufacturer datasheet alone offers.
کے لیے ڈراپ اِن متبادل MRF6S27015NR1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MRF6S27015NR1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Manufacturer, Mounting Type, RoHS Status.
MRF6S27015GNR1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6S27015NR1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6S19020NR1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MRF6S21010NR1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MRF6S2310NR1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MRF6S27015NR1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S27015NR1 |
| Device Type | RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode |
| Frequency Range | 2300 to 2700 MHz |
| Typical Test Frequency | 2600 MHz |
| Output Power (Avg, W-CDMA) | 3 W |
| Drain-Source Voltage (Max, VDS) | 68 V |
| Operating Drain Voltage (VDD) | 28 V |
| Power Gain (Typical at 2.6 GHz) | 14 dB |
| Quiescent Drain Current (IDQ) | 160 mA |
| پیکیج / کیس | TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads |
| ماؤنٹنگ ٹائپ | Surface Mount |
| VSWR Ruggedness | 10:1 at rated operating voltage |
| RoHS اسٹیٹس | Compliant (RoHS-compliant PPI suffix where applicable) |
| Lead-Free Finish | Yes (NiPdAu lead-frame and matte tin leads) |
| آپریٹنگ جنکشن درجہ حرارت | -40 C to +150 C (per datasheet) |
MRF6S27015NR1 پن کنفیگریشن
| پن 1 | Gate — RF input / gate bias |
| پن 2 | Drain — RF output / drain tab / thermal path |
| پن 3 | Source — Source return / RF ground |
محفوظ آپریٹنگ ایریا (Drain Current vs. Drain-Source Voltage)
عام استعمالات
MRF6S27015NR1 کے لیے موزوں ہے 6 ایپلیکیشنs: 2.6 GHz W-CDMA Base-Station Doherty Final Stage, LTE Base-Station Repeater Transmitter, WiMAX / BRS Customer-Premise Equipment, Driver Stage for Higher-Power 2.6 GHz LDMOS Final Stages, Public-Safety and Government Band Amplifiers, Industrial IoT and Smart-City Wireless Backhaul.
2.6 GHz W-CDMA Base-Station Doherty Final Stage
The MRF6S27015NR1 delivers 3 W average W-CDMA output power at 2.6 GHz with 14 dB gain from a 28 V rail, making it ideal for the peaking amplifier in small-cell Doherty transmitters. Its TO-270-2 over-mold package and matched 50-ohm input simplify PCB integration into compact macro-cell radio modules. Per the datasheet, drain efficiency in Doherty mode typically exceeds 30% at the rated 3 W output, enabling low-heat macro-radio operation at 2500-2700 MHz WiMAX/BRS bands without compromise in linearity for W-CDMA signals.
تجویز کردہ
LTE Base-Station Repeater Transmitter
In LTE pico-cell and outdoor small-cell repeaters operating from 2500-2700 MHz, the MRF6S27015NR1's 28 V, 14 dB gain, 3 W average output capability delivers the linearity and dynamic range required by 4G LTE signals. Compared to lower-voltage designs, 28 V operation allows long coaxial cable runs between amplifier and antenna without severe output-stage loss. Per the NXP datasheet, the device maintains stable gain and ACPR performance over the full -40 C to +85 C industrial temperature range typical of outdoor repeater enclosures.
تجویز کردہ
WiMAX / BRS Customer-Premise Equipment
The MRF6S27015NR1 supports final-stage amplification in 2.5-2.7 GHz BRS (Broadband Radio Service) and WiMAX outdoor CPE transmitters, where the 28 V bias allows higher linear output power at modest power dissipation. Its 14 dB gain at 2.6 GHz minimizes the required driver-stage bill-of-materials, allowing designers a single-stage solution for residential WiMAX CPE. Per the datasheet, the 10:1 VSWR mismatch ruggedness protects the device against antenna mismatch in field-deployed outdoor installations.
تجویز کردہ
Driver Stage for Higher-Power 2.6 GHz LDMOS Final Stages
The MRF6S27015NR1 is well-suited as a 3 W driver for higher-power 2.6 GHz LDMOS final-stage amplifiers (e.g., MRF6S26050L) in macro-cell radio base stations. Its 14 dB gain from 28 V provides the necessary gain budget when the final-stage LDMOS contributes only 12-15 dB in the matching network. This driver+final cascade architecture simplifies the overall Doherty amplifier solution: a single MRF6S27015NR1 driver feeds a 50 W LDMOS final without intermediate buffers, saving PCB area in compact macro-radio designs.
تجویز کردہ
Public-Safety and Government Band Amplifiers
Operating from 2500-2700 MHz, the MRF6S27015NR1 can also be deployed in licensed public-safety amplifier systems, government band-boost boosters, and tactical-radio retransmission panels. Its 3 W average, 14 dB gain, 28 V topology yields the linearity needed for the digital modulation formats used by P25/Tetra relay networks, while the lateral MOSFET's 10:1 VSWR ruggedness protects against variable antenna loading in field-deployed scenarios. Per the datasheet, the package's thermal via field is consistent with MIL-STD-810-style thermal design practices.
تجویز کردہ
Industrial IoT and Smart-City Wireless Backhaul
Smart-city wireless backhaul radios operating in the 2.5-2.7 GHz BRS band benefit from the MRF6S27015NR1's compact TO-270-2 over-mold package, which supports high-density SMT assembly for cost-sensitive industrial IoT transceivers. Its 14 dB gain at 28 V allows single-stage 3 W output for last-mile backhaul radio transmitters, while the lateral MOSFET's high-efficiency Doherty operation reduces heat dissipation in sealed urban enclosures. Per NXP, the device's ruggedness and band-shift compatibility with the GNR1 variant enable single-PN dual-band backhaul radio designs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MRF6S27015NR1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MRF6S27015GNR1 | MRF6S19020NR1 | MRF6S21010NR1 | MRF6S2310NR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270-2 (Case 1265-09) | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same |
| Frequency Range | 2500-2700 MHz | 2300-2400 MHz | 1930-1990 MHz | 2110-2170 MHz | 2300-2400 MHz |
| Output Power (Avg, W-CDMA) | 3 W | 3 W | 2 W | 1 W | 10 W |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| VSWR Ruggedness | 10:1 | 10:1 | 10:1 | 10:1 | 10:1 |
| Mounting Type | Surface Mount | Surface Mount - same | Surface Mount - same | Surface Mount - same | Surface Mount - same |
اہم امتیازی خصوصیات
- Tighter 2.6 GHz band focus than the GNR1 sister part (بمقابلہMRF6S27015GNR1)
- Higher power capability than MRF6S21010NR1 driver-stage part (بمقابلہMRF6S21010NR1)
- Lower power but smaller than MRF6S2310NR1 10 W part (بمقابلہMRF6S2310NR1)
ڈیزائن نوٹس
The TO-270-2 package lacks a metallic heatsink tab, so heat removal is entirely through PCB copper planes beneath the drain lead. Per the NXP datasheet, a 2 oz copper substrate with at least 4 thermal vias at 0.3 mm drill/star pattern is recommended for the 7-10 W peak dissipation typical of 3 W W-CDMA Doherty operation. Operating junction temperature should not exceed 150 C; for outdoor repeater designs, plan for 30-40 C junction rise above the 85 C ambient ceiling.
Use a Rogers 4350B (or equivalent low-loss ceramic-PTFE) substrate for 2.6 GHz layouts to minimize dielectric loss. The gate and drain matching networks should use microstrip lines with width computed from the substrate DK; quarter-wave transformer lines from 50 ohm to the device impedance are typical. Keep the gate bypass capacitor within 2 mm of the gate lead and route the source return directly through the package center via to minimize common-source inductance.
Do not confuse the MRF6S27015NR1 with its band-shifted sibling MRF6S27015GNR1 - the 'G' in part-number MRF6S27015GNR1 indicates 2.3-2.4 GHz, not 2.6 GHz operation. Substituting one for the other in a 2.6 GHz layout will cause severe gain roll-off and reduced drain efficiency. Always verify the datasheet's specified frequency range before substitution, even when the package outline appears identical. Note also that early MRF6S27015 samples were-case 1265-09, but production parts use the same case style 1 outline.
تعمیل کی معلومات
RoHS-compliant per NXP product page. Not AEC-Q100 qualified - this is a base-station RF power MOSFET, not an automotive-grade part. Halogen-free status not explicitly listed in retrieved NXP materials - marked unknown per data authenticity rules.
