MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS
MPN: MRF6S27085HR3 ✓ فعالMRF6S27085HR3 جائزہ
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a type of power MOSFET optimized for high-frequency, high-power amplification. LDMOS parts sit within the broader taxonomy: RF power transistor -> discrete RF semiconductor -> power amplifier building block. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and simplified single-supply biasing versus older bipolar RF transistors.
Key features include 28 V drain operating voltage, 68 V drain-source breakdown rating, 900 mA typical bias current at 28 V test, and 15.5 dB gain in the 2.6-2.7 GHz band. Thermal resistance is characterized for the NI-780 ceramic flange-mount package, which is bolted directly to the amplifier heat-sink for lowest possible junction-to-case thermal impedance. The device is internally input/output matched for the 2.6 GHz band, reducing external matching complexity.
The MRF6S27085HR3 uses a lateral DMOS cell with a thermally optimized ceramic package, enabling reliable 20 W CW or W-CDMA-class average power operation. The -HR3 tape-and-reel packaging suffix supports high-volume SMT-compatible flange-mount assembly when paired with automated pick-and-place fixtures, although the ceramic flange itself still requires bolt-down thermal mounting.
Typical applications include W-CDMA/LTE 2.6 GHz micro-cell and macro-cell base-station PAs, WiMAX and WiBro 2.5-2.7 GHz amplifier stages, multi-carrier amplifier (MCPA) final stages, and WLL (Wireless Local Loop) Class AB or Class C driver amplifiers. The same die is also used in pulsed-RF industrial and aerospace links operating in the 2.5-2.7 GHz sub-band.
Designers should ensure the NI-780 flange is bolted to a heat-sink with a thin layer of thermal compound, and that the input/output matching network is tuned for the exact sub-band (2.6 vs 2.7 GHz) to realize the rated 15.5 dB gain and >30% efficiency. The HSR3 same-die variant shares the NI-780 package but is offered as a different reel orientation/tape configuration for automated assembly.
کے لیے ڈراپ اِن متبادل MRF6S27085HR3 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MRF6S27085HR3 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Mounting Type, Package / Case, RoHS Status, Technology, Transistor Type.
MRF6S27085HSR3
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MRF6S27085HR5
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6S21100HR3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6S19100HR3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6S27085HR3 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S27085HR3 |
| ٹرانزسٹر کی قسم | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier |
| Operating Frequency | 2600 MHz to 2700 MHz |
| Test Frequency | 2.66 GHz |
| Output Power (Average, P1dB-rated) | 20 W |
| Power Gain (Typ) | 15.5 dB |
| Drain-Source Voltage Rating | 68 V |
| Operating Drain Voltage | 28 V |
| Quiescent Bias Current (Test) | 900 mA |
| پیکیج / کیس | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount |
| پن کی تعداد | 3 (Drain, Gate, Source) |
| ماؤنٹنگ ٹائپ | Flange / Chassis mount with bolt-down thermal pad |
| Packaging | Tape & Reel (suffix HR3) |
| Technology | Lateral DMOS (LDMOS) |
| RoHS اسٹیٹس | Compliant per Freescale/NXP material declaration |
MRF6S27085HR3 پن کنفیگریشن
| پن 1 | Gate — RF input / gate bias lead; biased at approximately +2.5-3.5 V to set quiescent drain current (Idq 900 mA) |
| پن 2 | Drain — RF output / drain supply lead; connected to +28 V DC via RF choke and matching network |
| پن 3 | Source — Source lead; tied to the ceramic flange mounting surface (CASE 465-06 STYLE 1) and to RF/DC ground |
محفوظ آپریٹنگ ایریا - DC
عام استعمالات
MRF6S27085HR3 کے لیے موزوں ہے 6 ایپلیکیشنs: W-CDMA / LTE 2.6 GHz Base-Station Final-Stage PA, WiMAX / WiBro 2.5-2.7 GHz Amplifier Stage, Multi-Carrier Power Amplifier (MCPA) Final Stage, Class AB Driver Amplifier in Macro-Cell Radio, Wireless Local Loop (WLL) 2.6 GHz Class AB / Class C PA, Pulsed-RF Industrial / Aerospace 2.5-2.7 GHz Link.
W-CDMA / LTE 2.6 GHz Base-Station Final-Stage PA
The MRF6S27085HR3 is the reference Freescale/NXP final-stage PA for micro-cell and pico-cell base stations operating in the 2.6-2.7 GHz LTE Band 38 / Band 41 / n41 / n78 sub-6 GHz band. Its 20 W average output power, 15.5 dB gain at 2.66 GHz, and 28 V LDMOS architecture let it drive a high-efficiency Doherty combiner or single-ended final stage with >30% power-added efficiency under single-carrier W-CDMA drive. Place the part on a copper-spreader heat-sink sized for 25 W continuous dissipation, and use the factory-recommended input/output matching network from the datasheet typical application circuit to realize the rated gain and ACLR linearity.
تجویز کردہ
WiMAX / WiBro 2.5-2.7 GHz Amplifier Stage
Designed-in by Freescale/NXP for 2.5 GHz WiMAX and Korean WiBro amplifier chains, the MRF6S27085HR3's 2600-2700 MHz operating band covers the WiMAX 2.5-2.69 GHz profile with minor matching-network retuning. Its 28 V LDMOS architecture produces the high peak-to-average ratio (PAR) headroom required by 64-QAM and 16-QAM OFDMA waveforms, while the 15.5 dB gain simplifies the driver-stage chain. Use it in a Class AB linear PA block followed by a digital pre-distortion (DPD) loop to meet the stringent EVM mask at multi-carrier drive.
تجویز کردہ
Multi-Carrier Power Amplifier (MCPA) Final Stage
Multi-carrier amplifier architectures in the 2.6 GHz band stack several carriers into one PA block; the MRF6S27085HR3 is well-suited as a final device because its high breakdown (68 V) and 28 V operating point preserve linearity under combined multi-carrier drive. Its internally matched input/output network reduces external component count, allowing compact MCPA modules with 4-6 carriers combined to a sector antenna. The NI-780 ceramic flange supports direct bolt-down thermal mounting, which is essential when stacking carriers pushes average dissipation to 15-18 W.
تجویز کردہ
Class AB Driver Amplifier in Macro-Cell Radio
Use the MRF6S27085HR3 as a driver in a 2.6 GHz macro-cell radio chain where a higher-power final stage (for example the MRF6S27085HR3 plus a 60-80 W output stage) is fed by this part in a balanced configuration. With 15.5 dB gain it provides ample drive while keeping the chain stable; its 28 V bias is compatible with the same supply rail as the final stage. Add a 10 dB directional coupler at the output for forward/reflected power sampling and feed back to an ALC loop for production-line calibration.
تجویز کردہ
Wireless Local Loop (WLL) 2.6 GHz Class AB / Class C PA
Freescale/NXP datasheet explicitly lists Class AB and Class C operation for WLL applications. The MRF6S27085HR3 in Class C mode delivers higher peak efficiency than Class AB at the expense of linearity, suitable for constant-envelope modulation or frequency-shift-keyed links in the 2.6 GHz band. Use a heat-sink sized for 25-30 W dissipation and add a harmonic filter (typically a 2-section low-pass) at the output to meet ETSI/FCC spurious emissions for fixed-wireless access equipment.
تجویز کردہ
Pulsed-RF Industrial / Aerospace 2.5-2.7 GHz Link
Beyond cellular, the MRF6S27085HR3 supports pulsed-RF applications in the 2.5-2.7 GHz sub-band including telemetry links, UAV command-and-control, and industrial radar transponders. Its 68 V breakdown and 20 W CW-class thermal design tolerate short-pulse duty cycles up to 25% with high peak power, while the NI-780 flange provides the rugged mechanical mounting required in vibration-prone aerospace environments. Drive the gate with a fast-rise-time pulse modulator and de-couple the drain with low-ESR ceramic bypass to handle the pulsed current transients.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MRF6S27085HR3 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MRF6S27085HSR3 | MRF6S27085HR5 | MRF6S21100HR3 | MRF6S19100HR3 |
|---|---|---|---|---|---|
| Package | NI-780H-2L (CASE 465-06, STYLE 1) | NI-780H-2L (CASE 465-06) - same | NI-780H-2L (CASE 465-06) - same | NI-780H-2L (CASE 465-06) - same | NI-780H-2L (CASE 465-06) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2600-2700 MHz | 2600-2700 MHz | 2600-2700 MHz | 2110-2170 MHz | 1930-1990 MHz |
| Output Power (Avg) | 20 W | 20 W | 20 W | ~22 W | ~100 W (different die) |
| Power Gain | 15.5 dB | 15.5 dB | 15.5 dB | 16.5 dB | 16.0 dB |
| Drain Voltage (Operating) | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Breakdown | 68 V | 68 V | 68 V | 65 V | 65 V |
| Quiescent Bias Current | 900 mA | 900 mA | 900 mA | 950 mA | 1300 mA |
| Reel Suffix | HR3 | HSR3 (alt orientation) | HR5 | HR3 | HR3 |
اہم امتیازی خصوصیات
- Factory-characterized at 2.66 GHz with 15.5 dB gain for 2.6 GHz W-CDMA (بمقابلہMRF6S19100HR3)
- 20 W in NI-780 ceramic flange with proven telecom reliability (بمقابلہMRF6S21100HR3)
- Same die as HSR3 alternate-reel orientation (بمقابلہMRF6S27085HSR3)
ڈیزائن نوٹس
Estimated: at 28 V VDD and 20 W average output power with 30% PAE, the MRF6S27085HR3 dissipates roughly 47 W internally (DC in - RF out = 66.7 W - 20 W). The NI-780 ceramic flange must be bolted to a heat-sink whose thermal resistance (theta_SA) holds junction-to-ambient below 100 C/W to keep Tj below 150 C at 85 C baseplate. Use a thin (~50 um) thermal-interface-material layer; thicker pads degrade RF grounding.
The 50 ohm microstrip matching network from the Freescale application note must use low-loss substrate (Rogers RO4003C or equivalent, er=3.55, h=0.508 mm). Place gate and drain bias chokes (typically 22 nH broadband wirewound) within 3 mm of the package leads to prevent low-frequency oscillation. Source leads are tied to the ceramic flange and must be RF-grounded with multiple low-inductance vias (4-6 vias, 0.3 mm drill) directly under the flange edge.
Do not exceed the 68 V drain-source breakdown rating even briefly - the drain overshoot from load-mismatch can easily exceed twice the supply. Add a TVS diode (e.g. 60 V SMBJ-type) at the drain bias feed. The gate is sensitive to ESD; never bias the gate before the drain supply is ramped. Always use a sequenced bias controller or gate-protection network.
For multi-carrier operation, the second-harmonic trap (typically a quarter-wave open stub at 5.32 GHz) must be placed within lambda/8 of the drain pad to maintain ACLR linearity. Source-pull and load-pull data in the Freescale datasheet identifies the optimum 50 ohm reference; deviating more than 1.5:1 VSWR at the fundamental can drop Pout by 1-2 dB and degrade efficiency by 5 percentage points.
تعمیل کی معلومات
RoHS compliance per Freescale/NXP material declaration. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-grade IC. Halogen-free status not explicitly listed in the provided data.
