MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP
MPN: MRF8S19260HSR6 ✓ فعالMRF8S19260HSR6 جائزہ
A power LDMOS transistor is a specialized laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-power RF amplification. Within the taxonomy, it sits below RF power MOSFET -> power MOSFET -> MOSFET -> discrete transistor -> discrete semiconductor. LDMOS devices dominate cellular base-station power amplifier (PA) architectures because they combine high RF gain, excellent efficiency, broadband operation, and cost-effective silicon technology versus GaAs or GaN alternatives for sub-3 GHz macros.
Key features of the MRF8S19260HSR6 include 74 W average output power, 18.2 dB power gain at 1.99 GHz, 30 V typical operating drain voltage, and a ruggedized package capable of withstanding the high VSWR mismatches encountered in cellular base-station installations. The device is housed in an NI-1230S-8 ceramic/bolt-down air-cavity package with integrated input and output matching networks optimized for the 1930-1990 MHz band. According to the NXP datasheet, this part is designed to deliver high reliability under multi-carrier W-CDMA drive conditions.
The device uses NXP's high-voltage LDMOS process technology, which provides high breakdown voltage, low output capacitance, and inherent thermal stability when mounted on a properly dimensioned cold-plate. Internal ESD protection and over-voltage ruggedness are integrated at the die level, supporting field reliability under harsh outdoor base-station thermal cycles.
Typical applications include W-CDMA, CDMA, LTE, and multi-carrier cellular base-station final-stage power amplifiers, repeaters, and high-power broadband RF amplifiers operating in the 1930-1990 MHz PCS/AWS band. Designers should mount the device on a copper or aluminum heat spreader with controlled thermal resistance (θJC specified in the datasheet) and use external circulators or isolators when antenna VSWR is variable. For multi-carrier signals, gate bias must be precisely tuned to maintain linearity while meeting adjacent-channel leakage ratio (ACLR) specifications.
کے لیے ڈراپ اِن متبادل MRF8S19260HSR6 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MRF8S19260HSR6 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Mounting Type, Manufacturer, Operating Mode, Part Number, RoHS Status.
MRF8S19260HR6
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF8S18120HR3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6S19100HR3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF8S19260HSR6 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S19260HSR6 |
| ٹرانزسٹر کی قسم | LDMOS, N-Channel, Dual |
| Frequency Band | 1930 MHz to 1990 MHz |
| Test Frequency | 1.99 GHz |
| Drain-Source Voltage (Max Rated) | 65 V |
| Operating Drain Voltage (Typical) | 30 V |
| Continuous Drain Current (Test) | 1.6 A |
| Output Power (CW / Avg) | 74 W average |
| Power Gain | 18.2 dB at 1.99 GHz |
| پیکیج / کیس | NI-1230S-8 (ceramic air-cavity bolt-down) |
| ماؤنٹنگ ٹائپ | Chassis / Flange Mount (through-hole RF bolt-down) |
| Lead Free Status | Compliant (per DigiKey listing) |
| RoHS اسٹیٹس | Compliant |
| Operating Mode | Class AB and Class C capable |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA |
MRF8S19260HSR6 پن کنفیگریشن
| پن Flange | Drain / RF Output — Drain DC and RF output; bolt-down flange is electrically common to the drain and serves as the main thermal path |
| پن Lead 1 | Gate 1 (Input) — RF gate input lead for one half of the dual-die structure; DC gate bias applied here |
| پن Lead 2 | Gate 2 (Input) — RF gate input lead for the second die (for push-pull internal configuration) |
| پن Lead 3 | Drain RF (Output) — Drain-side RF output lead connecting to output matching network |
DC محفوظ آپریٹنگ ایریا (estimated from datasheet ratings)
عام استعمالات
MRF8S19260HSR6 کے لیے موزوں ہے 6 ایپلیکیشنs: W-CDMA Cellular Base-Station Final Stage, LTE / LTE-Advanced Macro-Cell PA, Multi-Carrier PCS/AWS Repeater Amplifier, CDMA2000 Base-Station Power Amplifier, High-Power Broadband RF Amplifier (Lab/Test), Public-Safety / Private LTE Network PA.
W-CDMA Cellular Base-Station Final Stage
The MRF8S19260HSR6 is engineered as the final-stage PA in 1930-1990 MHz W-CDMA and multi-carrier base-station transmitters. Its 74 W average output power comfortably drives a 4-way or 6-way Doherty combiner at the sector output while maintaining ACLR margins under 3GPP TS 25.104. The 18.2 dB gain reduces driver-stage gain requirements, lowering overall BOM cost, and the 30 V typical drain voltage is the standard macro-cell PA rail, allowing direct compatibility with existing 30 V base-station power supplies.
تجویز کردہ
LTE / LTE-Advanced Macro-Cell PA
For LTE and LTE-Advanced macro-cell base stations operating in the PCS and AWS-1 spectrum, the MRF8S19260HSR6's broadband 1930-1990 MHz coverage and high multi-carrier linearity make it well suited to the 20 MHz and 40 MHz channel bandwidths typical of LTE sector outputs. At 74 W average and 30 V drain, it sits in the mid-power macro tier; designers should add a digital pre-distortion (DPD) loop to push ACLR below -50 dBc while keeping efficiency above 35 percent. The bolt-down NI-1230S-8 package simplifies integration into standard cold-plate heatsink assemblies.
تجویز کردہ
Multi-Carrier PCS/AWS Repeater Amplifier
Repeater and booster amplifiers for the 1930-1990 MHz band benefit from the MRF8S19260HSR6's 18.2 dB gain and Class AB linearity, which together minimize IM3 products when multiple carriers are amplified simultaneously. At 1.6 A quiescent bias the device runs cool enough for sealed outdoor enclosures with passive cooling. The rugged NI-1230S-8 package tolerates the high antenna VSWR seen in indoor/outdoor repeater deployments without damage.
تجویز کردہ
CDMA2000 Base-Station Power Amplifier
The MRF8S19260HSR6 was originally qualified for CDMA2000 macro-cell PA service in the 1930-1990 MHz band, delivering 74 W average with sufficient gain (18.2 dB) for cascaded PA chains. Modern CDMA2000 1xEV-DO base stations still use this frequency block, and the device's high ruggedness against load mismatch makes it ideal for unattended cell-site installations. Bias sequencing and over-temperature shutdown should be implemented on the gate driver to extend MTBF.
تجویز کردہ
High-Power Broadband RF Amplifier (Lab/Test)
Test and measurement equipment designers use the MRF8S19260HSR6 in broadband RF amplifiers and electromagnetic-compatibility (EMC) test amplifiers for the 1930-1990 MHz band. Its 74 W CW/peak capability allows high-field-strength generation for radiated immunity testing per IEC 61000-4-3. Lab amplifiers add circulator protection and a coupler-based output sampler for closed-loop leveling; the device's bolt-down package simplifies chassis integration into rack-mount amplifiers.
تجویز کردہ
Public-Safety / Private LTE Network PA
Private LTE networks operating in the 1930-1990 MHz band (CBRS and PCS extensions) increasingly deploy the MRF8S19260HSR6 as the high-power final stage in small-cell and micro-cell base-station PAs. Its 30 V drain operation and 74 W average output match standard small-cell reference designs, while the multi-carrier linearity enables shared use across multiple private-network tenants. Bolt-down NI-1230S-8 mounting supports integrated cold-plate thermal designs in compact small-cell enclosures.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MRF8S19260HSR6 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MRF8S19260HR6 | MRF8S18120HR3 | MRF6S19100HR3 |
|---|---|---|---|---|
| Package | NI-1230S-8 (bolt-down flange) | NI-1230 ceramic carrier | NI-780 bolt-down (different lead spacing) | NI-780 bolt-down (different lead spacing) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz | 1930-1990 MHz |
| Drain Voltage (Typical) | 30 V | 30 V | 28 V | 28 V |
| Drain-Source Voltage (Max) | 65 V | 65 V | 65 V | 65 V |
| Process Generation | 8th-gen LDMOS | 8th-gen LDMOS | 8th-gen LDMOS | 6th-gen LDMOS |
| Lead Free / RoHS | Yes (RoHS compliant) | Yes (RoHS compliant) | Yes (RoHS compliant) | Yes (RoHS compliant) |
اہم امتیازی خصوصیات
- Modern 8th-generation LDMOS process (بمقابلہMRF6S19100HR3)
- Tuned for the 1930-1990 MHz PCS/AWS band (بمقابلہMRF8S18120HR3)
- High-average-power 74 W rating for W-CDMA (بمقابلہLower-tier NXP LDMOS (e.g., MRF8S7170))
ڈیزائن نوٹس
Estimated: At 74 W average RF output and 8 W dissipated (typical PAE ~30 percent), the device dissipates roughly 35 W as heat when biased for Doherty operation. The NI-1230S-8 bolt-down package requires mounting to a copper or aluminum cold plate with thermal compound; θJC is specified on the NXP MRF8S19260H datasheet. Junction temperature should be kept below 200 C for long-term reliability; do not rely on natural convection alone above 20 W dissipation.
Use the reference PCB layout from the NXP MRF8S19260H datasheet evaluation board. Gate and drain matching networks must use low-loss substrates (Rogers RO4003C or equivalent) with 50 Ω transmission lines sized for 1930-1990 MHz. Place gate and drain bias chokes (RFC) on the same side as the matching network to minimize loop area; add gate-source ESD protection and 10 kΩ pull-down resistors on each gate to prevent spurious turn-on during power-up sequencing.
Common pitfalls when designing with MRF8S19260HSR6 include (1) failing to provide a 50 Ω gate termination when the RF drive is disabled, which can cause destructive oscillation; (2) exceeding the 65 V Vds(max) rating during load-mismatch transients - always include a drain-side TVS clamp or DC-coupled regulator; (3) neglecting gate sequencing - Vgs must be applied before Vds to prevent drain-current inrush. Reference the NXP application note on LDMOS bias sequencing before first power-up.
تعمیل کی معلومات
RoHS and lead-free per DigiKey listing. BeO-containing ceramic package requires dust-suppression controls if mechanically altered. REACH and conflict-minerals status not explicitly listed on distributor pages - request NXP material declaration for full compliance data.
