MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP
Référence : MRF8S19260HSR6 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $138.5 | $1 385,00 |
| 100 | $132 | $13 200,00 |
| 250 | $127.5 | $31 875,00 |
| 500 | $124 | $62 000,00 |
MRF8S19260HSR6 Présentation
A power LDMOS transistor is a specialized laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-power RF amplification. Within the taxonomy, it sits below RF power MOSFET -> power MOSFET -> MOSFET -> discrete transistor -> discrete semiconductor. LDMOS devices dominate cellular base-station power amplifier (PA) architectures because they combine high RF gain, excellent efficiency, broadband operation, and cost-effective silicon technology versus GaAs or GaN alternatives for sub-3 GHz macros.
Key features of the MRF8S19260HSR6 include 74 W average output power, 18.2 dB power gain at 1.99 GHz, 30 V typical operating drain voltage, and a ruggedized package capable of withstanding the high VSWR mismatches encountered in cellular base-station installations. The device is housed in an NI-1230S-8 ceramic/bolt-down air-cavity package with integrated input and output matching networks optimized for the 1930-1990 MHz band. According to the NXP datasheet, this part is designed to deliver high reliability under multi-carrier W-CDMA drive conditions.
The device uses NXP's high-voltage LDMOS process technology, which provides high breakdown voltage, low output capacitance, and inherent thermal stability when mounted on a properly dimensioned cold-plate. Internal ESD protection and over-voltage ruggedness are integrated at the die level, supporting field reliability under harsh outdoor base-station thermal cycles.
Typical applications include W-CDMA, CDMA, LTE, and multi-carrier cellular base-station final-stage power amplifiers, repeaters, and high-power broadband RF amplifiers operating in the 1930-1990 MHz PCS/AWS band. Designers should mount the device on a copper or aluminum heat spreader with controlled thermal resistance (θJC specified in the datasheet) and use external circulators or isolators when antenna VSWR is variable. For multi-carrier signals, gate bias must be precisely tuned to maintain linearity while meeting adjacent-channel leakage ratio (ACLR) specifications.
Alternatives de remplacement direct pour MRF8S19260HSR6 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF8S19260HSR6 (même facteur de forme et même empreinte) — différant par Mounting Type, Manufacturer, Operating Mode, Part Number, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF8S19260HR6
✅ Remplacement direct✓ En stock
$96.4 / unité
Voir la fiche technique →MRF8S18120HR3
✅ Remplacement direct✓ En stock
$54.2 / unité
Voir la fiche technique →MRF6S19100HR3
✅ Remplacement direct✓ En stock
$95 / unité
Voir la fiche technique →MRF8S19260HSR6 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S19260HSR6 |
| Type de transistor | LDMOS, N-Channel, Dual |
| Frequency Band | 1930 MHz to 1990 MHz |
| Test Frequency | 1.99 GHz |
| Drain-Source Voltage (Max Rated) | 65 V |
| Operating Drain Voltage (Typical) | 30 V |
| Continuous Drain Current (Test) | 1.6 A |
| Output Power (CW / Avg) | 74 W average |
| Power Gain | 18.2 dB at 1.99 GHz |
| Boîtier / Format | NI-1230S-8 (ceramic air-cavity bolt-down) |
| Type de montage | Chassis / Flange Mount (through-hole RF bolt-down) |
| Lead Free Status | Compliant (per DigiKey listing) |
| Statut RoHS | Compliant |
| Operating Mode | Class AB and Class C capable |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA |
Configuration des broches de MRF8S19260HSR6
| Broche Flange | Drain / RF Output — Drain DC and RF output; bolt-down flange is electrically common to the drain and serves as the main thermal path |
| Broche Lead 1 | Gate 1 (Input) — RF gate input lead for one half of the dual-die structure; DC gate bias applied here |
| Broche Lead 2 | Gate 2 (Input) — RF gate input lead for the second die (for push-pull internal configuration) |
| Broche Lead 3 | Drain RF (Output) — Drain-side RF output lead connecting to output matching network |
DC Zone de fonctionnement sûr (estimated from datasheet ratings)
Applications typiques
MRF8S19260HSR6 convient pour 6 applications: W-CDMA Cellular Base-Station Final Stage, LTE / LTE-Advanced Macro-Cell PA, Multi-Carrier PCS/AWS Repeater Amplifier, CDMA2000 Base-Station Power Amplifier, High-Power Broadband RF Amplifier (Lab/Test), Public-Safety / Private LTE Network PA.
W-CDMA Cellular Base-Station Final Stage
The MRF8S19260HSR6 is engineered as the final-stage PA in 1930-1990 MHz W-CDMA and multi-carrier base-station transmitters. Its 74 W average output power comfortably drives a 4-way or 6-way Doherty combiner at the sector output while maintaining ACLR margins under 3GPP TS 25.104. The 18.2 dB gain reduces driver-stage gain requirements, lowering overall BOM cost, and the 30 V typical drain voltage is the standard macro-cell PA rail, allowing direct compatibility with existing 30 V base-station power supplies.
Recommandé
LTE / LTE-Advanced Macro-Cell PA
For LTE and LTE-Advanced macro-cell base stations operating in the PCS and AWS-1 spectrum, the MRF8S19260HSR6's broadband 1930-1990 MHz coverage and high multi-carrier linearity make it well suited to the 20 MHz and 40 MHz channel bandwidths typical of LTE sector outputs. At 74 W average and 30 V drain, it sits in the mid-power macro tier; designers should add a digital pre-distortion (DPD) loop to push ACLR below -50 dBc while keeping efficiency above 35 percent. The bolt-down NI-1230S-8 package simplifies integration into standard cold-plate heatsink assemblies.
Recommandé
Multi-Carrier PCS/AWS Repeater Amplifier
Repeater and booster amplifiers for the 1930-1990 MHz band benefit from the MRF8S19260HSR6's 18.2 dB gain and Class AB linearity, which together minimize IM3 products when multiple carriers are amplified simultaneously. At 1.6 A quiescent bias the device runs cool enough for sealed outdoor enclosures with passive cooling. The rugged NI-1230S-8 package tolerates the high antenna VSWR seen in indoor/outdoor repeater deployments without damage.
Recommandé
CDMA2000 Base-Station Power Amplifier
The MRF8S19260HSR6 was originally qualified for CDMA2000 macro-cell PA service in the 1930-1990 MHz band, delivering 74 W average with sufficient gain (18.2 dB) for cascaded PA chains. Modern CDMA2000 1xEV-DO base stations still use this frequency block, and the device's high ruggedness against load mismatch makes it ideal for unattended cell-site installations. Bias sequencing and over-temperature shutdown should be implemented on the gate driver to extend MTBF.
Recommandé
High-Power Broadband RF Amplifier (Lab/Test)
Test and measurement equipment designers use the MRF8S19260HSR6 in broadband RF amplifiers and electromagnetic-compatibility (EMC) test amplifiers for the 1930-1990 MHz band. Its 74 W CW/peak capability allows high-field-strength generation for radiated immunity testing per IEC 61000-4-3. Lab amplifiers add circulator protection and a coupler-based output sampler for closed-loop leveling; the device's bolt-down package simplifies chassis integration into rack-mount amplifiers.
Recommandé
Public-Safety / Private LTE Network PA
Private LTE networks operating in the 1930-1990 MHz band (CBRS and PCS extensions) increasingly deploy the MRF8S19260HSR6 as the high-power final stage in small-cell and micro-cell base-station PAs. Its 30 V drain operation and 74 W average output match standard small-cell reference designs, while the multi-carrier linearity enables shared use across multiple private-network tenants. Bolt-down NI-1230S-8 mounting supports integrated cold-plate thermal designs in compact small-cell enclosures.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF8S19260HSR6 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF8S19260HR6 | MRF8S18120HR3 | MRF6S19100HR3 |
|---|---|---|---|---|
| Package | NI-1230S-8 (bolt-down flange) | NI-1230 ceramic carrier | NI-780 bolt-down (different lead spacing) | NI-780 bolt-down (different lead spacing) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz | 1930-1990 MHz |
| Drain Voltage (Typical) | 30 V | 30 V | 28 V | 28 V |
| Drain-Source Voltage (Max) | 65 V | 65 V | 65 V | 65 V |
| Process Generation | 8th-gen LDMOS | 8th-gen LDMOS | 8th-gen LDMOS | 6th-gen LDMOS |
| Lead Free / RoHS | Yes (RoHS compliant) | Yes (RoHS compliant) | Yes (RoHS compliant) | Yes (RoHS compliant) |
Principaux différenciateurs
- Modern 8th-generation LDMOS process (vs MRF6S19100HR3)
- Tuned for the 1930-1990 MHz PCS/AWS band (vs MRF8S18120HR3)
- High-average-power 74 W rating for W-CDMA (vs Lower-tier NXP LDMOS (e.g., MRF8S7170))
Notes de conception
Estimated: At 74 W average RF output and 8 W dissipated (typical PAE ~30 percent), the device dissipates roughly 35 W as heat when biased for Doherty operation. The NI-1230S-8 bolt-down package requires mounting to a copper or aluminum cold plate with thermal compound; θJC is specified on the NXP MRF8S19260H datasheet. Junction temperature should be kept below 200 C for long-term reliability; do not rely on natural convection alone above 20 W dissipation.
Use the reference PCB layout from the NXP MRF8S19260H datasheet evaluation board. Gate and drain matching networks must use low-loss substrates (Rogers RO4003C or equivalent) with 50 Ω transmission lines sized for 1930-1990 MHz. Place gate and drain bias chokes (RFC) on the same side as the matching network to minimize loop area; add gate-source ESD protection and 10 kΩ pull-down resistors on each gate to prevent spurious turn-on during power-up sequencing.
Common pitfalls when designing with MRF8S19260HSR6 include (1) failing to provide a 50 Ω gate termination when the RF drive is disabled, which can cause destructive oscillation; (2) exceeding the 65 V Vds(max) rating during load-mismatch transients - always include a drain-side TVS clamp or DC-coupled regulator; (3) neglecting gate sequencing - Vgs must be applied before Vds to prevent drain-current inrush. Reference the NXP application note on LDMOS bias sequencing before first power-up.
Informations de conformité
RoHS and lead-free per DigiKey listing. BeO-containing ceramic package requires dust-suppression controls if mechanically altered. REACH and conflict-minerals status not explicitly listed on distributor pages - request NXP material declaration for full compliance data.
