SCT4062KRC15 - 1200V 26A 62mΩ SiC MOSFET TO-247-4 | ROHM
MPN: SCT4062KRC15 ✓ فعالSCT4062KRC15 جائزہ
A Silicon Carbide (SiC) MOSFET is a wide-bandgap power transistor built on a SiC epitaxial layer rather than conventional silicon. Because SiC has a critical electric field roughly 10× that of silicon, the same blocking voltage can be achieved with a much thinner drift region, slashing R_DS(on) × area. Within the broader taxonomy it sits under MOSFET → power MOSFET → discrete semiconductor → wide-bandgap semiconductor, and is the recommended choice where efficiency, switching frequency, or junction temperature exceed what silicon IGBTs and super-junction MOSFETs can deliver.
The SCT4062KRC15 features a 4th-generation trench-structure SiC die with gate-oxide reliability rated for a ±18 V V_GS window, built-in protection against short-circuit events, a low body-diode V_F for synchronous-rectification use, and a 100 °C-rated continuous drain current (subject to thermal design). Compared with ROHM's previous-generation SCT3x series the new die cuts on-resistance by about 40 % and switching loss by about 50 %, while the 15 V (nominal) gate drive simplifies the interface from standard SiC gate-driver ICs. A separate Kelvin-source pin (pin 4) reduces gate-loop inductance, which is essential at switching frequencies above 50 kHz.
Typical applications include 800 V-class electric-vehicle traction inverters, on-board EV chargers (OBC), 3-phase photovoltaic string inverters, telecom rectifiers and industrial SMPS, induction-heating converters, and DC solid-state circuit breakers. The 4-pin TO-247 footprint is the de-facto standard for high-power SiC discrete designs, allowing direct substitution in upgrade-in-place programs from 3-pin TO-247 silicon MOSFETs to SiC. The device's AEC-Q101-qualified sibling (SCT4062KRHRC15) is pin-compatible for automotive programs.
For drop-in upgrading of legacy 3-pin TO-247-4L SiC designs, simply leave the original source pin in place, connect pin 4 to the gate-driver ground, and verify that the drive voltage matches the SiC V_GS(th) window. The page synthesizes distributor pricing, parametric alternatives, and practical gate-drive design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل SCT4062KRC15 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں SCT4062KRC15 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Configuration, Mounting Type, Package, Technology.
SCT4062KRHRC15
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SCT4062KRC15TR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SCT4022DRC15
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SCT2080KEC11
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IMW120R045M1H
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →C2M0040120D
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UJ3C065080T3S
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SCT4062KRC15 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | ROHM Semiconductor |
| Product Family | 4th-Gen SiC Trench MOSFET |
| ٹرانزسٹر کی قسم | N-Channel SiC MOSFET |
| Drain-Source Voltage (V_DSS) | 1200 V |
| Continuous Drain Current (I_D, Tc) | 26 A |
| R_DS(on) (typ) | 62 mΩ @ V_GS = 18 V |
| Gate-Source Voltage (V_GS) Drive | 15 V nominal, ±18 V max |
| Technology | Silicon Carbide (SiC), trench-gate |
| پیکیج | TO-247-4L (4-pin through-hole, Kelvin source) |
| Power Dissipation (P_D, Tc=25°C) | 115 W |
| ماؤنٹنگ ٹائپ | Through-Hole (THD) |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| Configuration | Single N-Channel |
| Gate-Drive Logic | Standard SiC drive (15 V V_GS) |
| Short-Circuit Withstand | Yes (per datasheet) |
| RoHS اسٹیٹس | Compliant |
SCT4062KRC15 پن کنفیگریشن
| پن 1 | Gate (G) — MOSFET gate drive input, 15 V nominal / ±18 V max |
| پن 2 | Drain (D) — Power drain, also electrically connected to the metal tab |
| پن 3 | Source (S) — Power source return for main load current |
| پن 4 | Kelvin Source (S_K) — Kelvin source for gate-driver return; connect to gate-driver GND to minimize common-source inductance |
محفوظ آپریٹنگ ایریا - DC (Tj = 175°C max)
عام استعمالات
SCT4062KRC15 کے لیے موزوں ہے 7 ایپلیکیشنs: On-Board EV Charger (OBC), Three-Phase Solar String Inverter, Industrial SMPS and Telecom Rectifier, EV Traction Inverter, DC Solid-State Circuit Breaker, Induction Heating Converter, DC Fast Charger (1500 V Bus).
On-Board EV Charger (OBC)
The SCT4062KRC15's 1200 V V_DSS rating comfortably supports 800 V battery systems with full derating margin, while 26 A continuous drain current covers 6.6 kW OBC primary-side full-bridge stages. Its 62 mΩ on-resistance plus the 4-pin Kelvin-source pin cuts switching loss in 100 kHz+ totem-pole PFC and DCDC stages - measurable improvement is a 30-50 % loss reduction vs prior-generation SiC parts. Unlike a silicon super-junction MOSFET it sustains switching frequencies above 100 kHz without thermal runaway. Reference designs from ROHM and 3rd-party OBC vendors commonly pair it with the BM61S1100FV-C gate driver and UCC25640 LLC controller; companion MPNs include gate-driver BM61S1100FV-C and PFC controller UCC25640. Application icon ⚡ chosen because OBC is a high-power battery-charging stage.
تجویز کردہ
Three-Phase Solar String Inverter
In 1500 V DC photovoltaic string inverters the SCT4062KRC15's 1200 V drain-source rating handles 1000-1100 V string voltages with safety margin, while its 4th-generation SiC die enables 50 kHz+ hard-switched boost/PFC stages without diode reverse-recovery penalties. The 62 mΩ R_DS(on) reduces conduction loss to about half that of equivalent silicon super-junction MOSFETs at the same V_DSS. ROHM's published inverter reference designs use the part in T-type and I-type three-level topologies. Companion MPNs include the gate-driver UCC21750 and MCU TMS320F28P65; MPPT control loops typically run on C2000. Application icon ⚡ chosen for solar power conversion.
تجویز کردہ
Industrial SMPS and Telecom Rectifier
Telecom 48 V rectifiers upgraded to 3-phase 380 V input use 1200 V SiC MOSFETs like the SCT4062KRC15 in the PFC front-end and the LLC primary side. The 26 A continuous drain current covers 5-10 kW rectifier stages, while the 4-pin TO-247-4L package enables direct substitution of older silicon MOSFETs on existing PCB layouts. At full load the SCT4062KRC15 dissipates about 40 W less than a comparable silicon super-junction MOSFET at 100 kHz switching frequency, allowing fan-less thermal designs in sealed enclosures. Companion MPNs include the PFC controller UCC28070A and LLC controller UCC25640x; MCU is typically TMS320F28P65. Application icon 🏭 chosen because telecom rectifiers are industrial equipment.
تجویز کردہ
EV Traction Inverter
In 800 V-class EV traction inverters the SCT4062KRC15 handles the high-side and low-side switches of the three-phase bridge at inverter power levels up to 150 kW peak. Its 1200 V drain-source rating provides the necessary margin above 800 V battery transients (over-voltage to 1100 V is common during regen braking), while the 26 A continuous drain current supports continuous motor torque. For AEC-Q101 qualified automotive designs, ROHM recommends the pin-compatible SCT4062KRHRC15 in the same TO-247-4L footprint. Companion MPNs include gate-driver BM61M41RFV-C and traction MCU TC275; current sensing uses isolated delta-sigma modulators such as AMC1301. Application icon 🚗 chosen because traction inverter is automotive.
تجویز کردہ
DC Solid-State Circuit Breaker
Solid-state DC circuit breakers for 800 V battery disconnect use the SCT4062KRC15 in a back-to-back or common-source configuration to interrupt fault currents within 10 µs without arcing. The SiC die's short-circuit withstand time and low R_DS(on) of 62 mΩ keep conduction loss low during normal operation. The TO-247-4L package exposes the Kelvin-source pin which is critical for the high di/dt that occurs during interruption. Compared with mechanical DC breakers the solid-state design eliminates contact wear and enables remote trip/reclose functions. Companion MPNs include gate-driver UCC21750 and current-sense IC AMC1301; system controller is typically TMS320F28P65. Application icon ⚡ chosen because circuit breakers are power-management.
تجویز کردہ
Induction Heating Converter
Induction-heating resonant converters operate at 20-100 kHz and benefit from SiC MOSFETs because of their low switching loss and high junction-temperature capability. The SCT4062KRC15's 62 mΩ on-resistance and 26 A continuous current comfortably cover 5-10 kW cooktop and industrial heater designs. Unlike silicon IGBTs it sustains continuous switching at 100 kHz with cooler operation. The TO-247-4L footprint allows drop-in replacement of older discrete designs. Companion MPNs include resonant controller UCC25640 and gate-driver UCC21750; current sensing uses INA240. Application icon 🏭 chosen because induction heating is industrial.
تجویز کردہ
DC Fast Charger (1500 V Bus)
350 kW-class DC fast-charging stations use 1500 V DC bus architectures to push 500 A+ currents through thinner cables. The SCT4062KRC15 serves in the AC-DC PFC front-end and DC-DC primary stages, where its 1200 V drain-source rating supports 1500 V buses with derating margin and its 4th-gen SiC die cuts switching loss by 50 % vs prior generations. 62 mΩ R_DS(on) keeps conduction loss low at the 26 A continuous current rating; 50 kHz switching frequency shrinks magnetic components for higher power density. Companion MPNs include PFC controller UCC28070A and DSP TMS320F28P65. Application icon ⚡ chosen because EV fast charging is power-electronics.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا SCT4062KRC15 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | SCT4062KRHRC15 | SCT4022DRC15 | IMW120R045M1 | C2M0040120D | UJ3C065080T3S |
|---|---|---|---|---|---|---|
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | Infineon | Wolfspeed (Cree) | Qorvo (UnitedSiC) |
| Package | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) |
| V_DSS (V) | 1200 | 1200 | 1200 | 1200 | 1200 | 1200 |
| I_D continuous (A, Tc) | 26 | 26 | 40 | 32 | 36 | 31 |
| R_DS(on) typ (mΩ) | 62 | 62 | 22 | 45 | 40 | 80 |
| Technology | 4th-gen SiC trench | 4th-gen SiC trench | 4th-gen SiC trench | SiC trench (CoolSiC) | SiC planar (Gen 3) | SiC cascode (Si-driver) |
| AEC-Q101 Automotive | No (industrial) | Yes | No | No | No | No |
| Gate Drive V_GS (V) | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 12 V (standard Si MOSFET drive) |
اہم امتیازی خصوصیات
- 4th-generation SiC trench die with 40 % lower R_DS(on) and 50 % lower switching loss vs prior generation (بمقابلہROHM SCT3022ALHR (3rd-gen))
- TO-247-4L Kelvin-source pin for reduced common-source inductance (بمقابلہStandard 3-pin TO-247 SiC MOSFETs (e.g., C2M0025120D))
- Drop-in automotive-grade sibling available (بمقابلہInfineon IMW120R045M1 (no AEC-Q101 automotive version in same TO-247-4L))
ڈیزائن نوٹس
The TO-247-4L Kelvin-source pin (pin 4) MUST be connected to the gate-driver ground reference, not to the power-source bond. This decouples the high di/dt power current from the gate-drive return path and prevents source-inductance-induced V_GS ringing. Estimate: at 100 A/µs di/dt a 5 nH common-source inductance would produce 0.5 V of gate-rail ringing - enough to re-trigger the device into avalanche. Layout the gate-drive loop area under 1 cm² and use a 4-layer PCB with continuous ground plane beneath the TO-247 footprint.
Estimated thermal analysis: at VIN=800 V, VOUT=400 V (half-bridge), and 10 A continuous drain current, the SCT4062KRC15 dissipates approximately 6.2 W (62 mΩ × 10²). With TO-247 junction-to-case thermal resistance of 0.9 °C/W and a typical clip-mount heatsink of 5 °C/W, junction temperature rises 36 °C above the 70 °C heatsink - safe but tight. For 100 % continuous load, use a forced-air or water-cooled heatsink to keep Tj below 150 °C for margin.
Use a Kelvin-source PCB layout: route the gate-driver ground return directly to pin 4 (Kelvin source), while the power-return PCB trace runs separately from pin 3 to the bulk capacitor. Place the gate-driver IC within 5 mm of the TO-247 to minimize gate-loop inductance. Add a 10 Ω gate-source resistor close to the device pins to damp Miller-induced turn-on. A 1 nF to 100 nF decoupling cap between V_GS and the driver ground further reduces high-frequency ringing.
Do not use a standard silicon IGBT gate driver (15 V on / 0 V off) - the off-state voltage is insufficient for SiC. Use a SiC-aware driver that swings -3 to -5 V off to prevent parasitic turn-on at high dV/dt. Do not exceed V_GS of ±18 V (absolute max) - over-voltage on the gate oxide is the most common SiC failure mode. Do not parallel multiple SCT4062KRC15 without gate-source resistors to suppress parasitic oscillation.
تعمیل کی معلومات
RoHS/REACH compliant per ROHM product page. AEC-Q101 automotive qualification applies to the SCT4062KRHRC15 sibling - this industrial part is not AEC-Q100 qualified.
