SCT4062KRC15 - 1200V 26A 62mΩ SiC MOSFET TO-247-4 | ROHM
부품 번호: SCT4062KRC15 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $11.41 | $11.41 |
| 10 | $10.27 | $102.70 |
| 100 | $9.18 | $918.00 |
| 500 | $8.3 | $4,150.00 |
| 1,000 | $7.65 | $7,650.00 |
SCT4062KRC15 개요
A Silicon Carbide (SiC) MOSFET is a wide-bandgap power transistor built on a SiC epitaxial layer rather than conventional silicon. Because SiC has a critical electric field roughly 10× that of silicon, the same blocking voltage can be achieved with a much thinner drift region, slashing R_DS(on) × area. Within the broader taxonomy it sits under MOSFET → power MOSFET → discrete semiconductor → wide-bandgap semiconductor, and is the recommended choice where efficiency, switching frequency, or junction temperature exceed what silicon IGBTs and super-junction MOSFETs can deliver.
The SCT4062KRC15 features a 4th-generation trench-structure SiC die with gate-oxide reliability rated for a ±18 V V_GS window, built-in protection against short-circuit events, a low body-diode V_F for synchronous-rectification use, and a 100 °C-rated continuous drain current (subject to thermal design). Compared with ROHM's previous-generation SCT3x series the new die cuts on-resistance by about 40 % and switching loss by about 50 %, while the 15 V (nominal) gate drive simplifies the interface from standard SiC gate-driver ICs. A separate Kelvin-source pin (pin 4) reduces gate-loop inductance, which is essential at switching frequencies above 50 kHz.
Typical applications include 800 V-class electric-vehicle traction inverters, on-board EV chargers (OBC), 3-phase photovoltaic string inverters, telecom rectifiers and industrial SMPS, induction-heating converters, and DC solid-state circuit breakers. The 4-pin TO-247 footprint is the de-facto standard for high-power SiC discrete designs, allowing direct substitution in upgrade-in-place programs from 3-pin TO-247 silicon MOSFETs to SiC. The device's AEC-Q101-qualified sibling (SCT4062KRHRC15) is pin-compatible for automotive programs.
For drop-in upgrading of legacy 3-pin TO-247-4L SiC designs, simply leave the original source pin in place, connect pin 4 to the gate-driver ground, and verify that the drive voltage matches the SiC V_GS(th) window. The page synthesizes distributor pricing, parametric alternatives, and practical gate-drive design notes not found in the manufacturer datasheet.
드롭인 대체품: SCT4062KRC15 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: SCT4062KRC15 (동일 폼 팩터 및 풋프린트) — 차이점: Configuration, Mounting Type, Package, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SCT4062KRHRC15
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SCT4062KRC15TR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SCT4022DRC15
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
SCT2080KEC11
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IMW120R045M1H
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →C2M0040120D
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UJ3C065080T3S
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SCT4062KRC15 최대 정격 & 전기적 특성
| Manufacturer | ROHM Semiconductor |
| Product Family | 4th-Gen SiC Trench MOSFET |
| 트랜지스터 유형 | N-Channel SiC MOSFET |
| Drain-Source Voltage (V_DSS) | 1200 V |
| Continuous Drain Current (I_D, Tc) | 26 A |
| R_DS(on) (typ) | 62 mΩ @ V_GS = 18 V |
| Gate-Source Voltage (V_GS) Drive | 15 V nominal, ±18 V max |
| Technology | Silicon Carbide (SiC), trench-gate |
| 패키지 | TO-247-4L (4-pin through-hole, Kelvin source) |
| Power Dissipation (P_D, Tc=25°C) | 115 W |
| 실장 유형 | Through-Hole (THD) |
| 동작 접합 온도 | -55 °C to +175 °C |
| Configuration | Single N-Channel |
| Gate-Drive Logic | Standard SiC drive (15 V V_GS) |
| Short-Circuit Withstand | Yes (per datasheet) |
| RoHS 상태 | Compliant |
SCT4062KRC15 핀 구성
| 핀 1 | Gate (G) — MOSFET gate drive input, 15 V nominal / ±18 V max |
| 핀 2 | Drain (D) — Power drain, also electrically connected to the metal tab |
| 핀 3 | Source (S) — Power source return for main load current |
| 핀 4 | Kelvin Source (S_K) — Kelvin source for gate-driver return; connect to gate-driver GND to minimize common-source inductance |
안전 동작 영역 - DC (Tj = 175°C max)
일반적인 애플리케이션
SCT4062KRC15 적합 용도: 7 애플리케이션s: On-Board EV Charger (OBC), Three-Phase Solar String Inverter, Industrial SMPS and Telecom Rectifier, EV Traction Inverter, DC Solid-State Circuit Breaker, Induction Heating Converter, DC Fast Charger (1500 V Bus).
On-Board EV Charger (OBC)
The SCT4062KRC15's 1200 V V_DSS rating comfortably supports 800 V battery systems with full derating margin, while 26 A continuous drain current covers 6.6 kW OBC primary-side full-bridge stages. Its 62 mΩ on-resistance plus the 4-pin Kelvin-source pin cuts switching loss in 100 kHz+ totem-pole PFC and DCDC stages - measurable improvement is a 30-50 % loss reduction vs prior-generation SiC parts. Unlike a silicon super-junction MOSFET it sustains switching frequencies above 100 kHz without thermal runaway. Reference designs from ROHM and 3rd-party OBC vendors commonly pair it with the BM61S1100FV-C gate driver and UCC25640 LLC controller; companion MPNs include gate-driver BM61S1100FV-C and PFC controller UCC25640. Application icon ⚡ chosen because OBC is a high-power battery-charging stage.
추천
Three-Phase Solar String Inverter
In 1500 V DC photovoltaic string inverters the SCT4062KRC15's 1200 V drain-source rating handles 1000-1100 V string voltages with safety margin, while its 4th-generation SiC die enables 50 kHz+ hard-switched boost/PFC stages without diode reverse-recovery penalties. The 62 mΩ R_DS(on) reduces conduction loss to about half that of equivalent silicon super-junction MOSFETs at the same V_DSS. ROHM's published inverter reference designs use the part in T-type and I-type three-level topologies. Companion MPNs include the gate-driver UCC21750 and MCU TMS320F28P65; MPPT control loops typically run on C2000. Application icon ⚡ chosen for solar power conversion.
추천
Industrial SMPS and Telecom Rectifier
Telecom 48 V rectifiers upgraded to 3-phase 380 V input use 1200 V SiC MOSFETs like the SCT4062KRC15 in the PFC front-end and the LLC primary side. The 26 A continuous drain current covers 5-10 kW rectifier stages, while the 4-pin TO-247-4L package enables direct substitution of older silicon MOSFETs on existing PCB layouts. At full load the SCT4062KRC15 dissipates about 40 W less than a comparable silicon super-junction MOSFET at 100 kHz switching frequency, allowing fan-less thermal designs in sealed enclosures. Companion MPNs include the PFC controller UCC28070A and LLC controller UCC25640x; MCU is typically TMS320F28P65. Application icon 🏭 chosen because telecom rectifiers are industrial equipment.
추천
EV Traction Inverter
In 800 V-class EV traction inverters the SCT4062KRC15 handles the high-side and low-side switches of the three-phase bridge at inverter power levels up to 150 kW peak. Its 1200 V drain-source rating provides the necessary margin above 800 V battery transients (over-voltage to 1100 V is common during regen braking), while the 26 A continuous drain current supports continuous motor torque. For AEC-Q101 qualified automotive designs, ROHM recommends the pin-compatible SCT4062KRHRC15 in the same TO-247-4L footprint. Companion MPNs include gate-driver BM61M41RFV-C and traction MCU TC275; current sensing uses isolated delta-sigma modulators such as AMC1301. Application icon 🚗 chosen because traction inverter is automotive.
추천
DC Solid-State Circuit Breaker
Solid-state DC circuit breakers for 800 V battery disconnect use the SCT4062KRC15 in a back-to-back or common-source configuration to interrupt fault currents within 10 µs without arcing. The SiC die's short-circuit withstand time and low R_DS(on) of 62 mΩ keep conduction loss low during normal operation. The TO-247-4L package exposes the Kelvin-source pin which is critical for the high di/dt that occurs during interruption. Compared with mechanical DC breakers the solid-state design eliminates contact wear and enables remote trip/reclose functions. Companion MPNs include gate-driver UCC21750 and current-sense IC AMC1301; system controller is typically TMS320F28P65. Application icon ⚡ chosen because circuit breakers are power-management.
추천
Induction Heating Converter
Induction-heating resonant converters operate at 20-100 kHz and benefit from SiC MOSFETs because of their low switching loss and high junction-temperature capability. The SCT4062KRC15's 62 mΩ on-resistance and 26 A continuous current comfortably cover 5-10 kW cooktop and industrial heater designs. Unlike silicon IGBTs it sustains continuous switching at 100 kHz with cooler operation. The TO-247-4L footprint allows drop-in replacement of older discrete designs. Companion MPNs include resonant controller UCC25640 and gate-driver UCC21750; current sensing uses INA240. Application icon 🏭 chosen because induction heating is industrial.
추천
DC Fast Charger (1500 V Bus)
350 kW-class DC fast-charging stations use 1500 V DC bus architectures to push 500 A+ currents through thinner cables. The SCT4062KRC15 serves in the AC-DC PFC front-end and DC-DC primary stages, where its 1200 V drain-source rating supports 1500 V buses with derating margin and its 4th-gen SiC die cuts switching loss by 50 % vs prior generations. 62 mΩ R_DS(on) keeps conduction loss low at the 26 A continuous current rating; 50 kHz switching frequency shrinks magnetic components for higher power density. Companion MPNs include PFC controller UCC28070A and DSP TMS320F28P65. Application icon ⚡ chosen because EV fast charging is power-electronics.
추천
추천 제품 요약
엔지니어링 참조 데이터: SCT4062KRC15 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SCT4062KRHRC15 | SCT4022DRC15 | IMW120R045M1 | C2M0040120D | UJ3C065080T3S |
|---|---|---|---|---|---|---|
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | Infineon | Wolfspeed (Cree) | Qorvo (UnitedSiC) |
| Package | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) | TO-247-4L (Kelvin source) |
| V_DSS (V) | 1200 | 1200 | 1200 | 1200 | 1200 | 1200 |
| I_D continuous (A, Tc) | 26 | 26 | 40 | 32 | 36 | 31 |
| R_DS(on) typ (mΩ) | 62 | 62 | 22 | 45 | 40 | 80 |
| Technology | 4th-gen SiC trench | 4th-gen SiC trench | 4th-gen SiC trench | SiC trench (CoolSiC) | SiC planar (Gen 3) | SiC cascode (Si-driver) |
| AEC-Q101 Automotive | No (industrial) | Yes | No | No | No | No |
| Gate Drive V_GS (V) | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 15 V nom / ±18 V max | 12 V (standard Si MOSFET drive) |
주요 차별점
- 4th-generation SiC trench die with 40 % lower R_DS(on) and 50 % lower switching loss vs prior generation (vs ROHM SCT3022ALHR (3rd-gen))
- TO-247-4L Kelvin-source pin for reduced common-source inductance (vs Standard 3-pin TO-247 SiC MOSFETs (e.g., C2M0025120D))
- Drop-in automotive-grade sibling available (vs Infineon IMW120R045M1 (no AEC-Q101 automotive version in same TO-247-4L))
설계 노트
The TO-247-4L Kelvin-source pin (pin 4) MUST be connected to the gate-driver ground reference, not to the power-source bond. This decouples the high di/dt power current from the gate-drive return path and prevents source-inductance-induced V_GS ringing. Estimate: at 100 A/µs di/dt a 5 nH common-source inductance would produce 0.5 V of gate-rail ringing - enough to re-trigger the device into avalanche. Layout the gate-drive loop area under 1 cm² and use a 4-layer PCB with continuous ground plane beneath the TO-247 footprint.
Estimated thermal analysis: at VIN=800 V, VOUT=400 V (half-bridge), and 10 A continuous drain current, the SCT4062KRC15 dissipates approximately 6.2 W (62 mΩ × 10²). With TO-247 junction-to-case thermal resistance of 0.9 °C/W and a typical clip-mount heatsink of 5 °C/W, junction temperature rises 36 °C above the 70 °C heatsink - safe but tight. For 100 % continuous load, use a forced-air or water-cooled heatsink to keep Tj below 150 °C for margin.
Use a Kelvin-source PCB layout: route the gate-driver ground return directly to pin 4 (Kelvin source), while the power-return PCB trace runs separately from pin 3 to the bulk capacitor. Place the gate-driver IC within 5 mm of the TO-247 to minimize gate-loop inductance. Add a 10 Ω gate-source resistor close to the device pins to damp Miller-induced turn-on. A 1 nF to 100 nF decoupling cap between V_GS and the driver ground further reduces high-frequency ringing.
Do not use a standard silicon IGBT gate driver (15 V on / 0 V off) - the off-state voltage is insufficient for SiC. Use a SiC-aware driver that swings -3 to -5 V off to prevent parasitic turn-on at high dV/dt. Do not exceed V_GS of ±18 V (absolute max) - over-voltage on the gate oxide is the most common SiC failure mode. Do not parallel multiple SCT4062KRC15 without gate-source resistors to suppress parasitic oscillation.
규정 준수 정보
RoHS/REACH compliant per ROHM product page. AEC-Q101 automotive qualification applies to the SCT4062KRHRC15 sibling - this industrial part is not AEC-Q100 qualified.
