SI8273AB-D-IM - 4A Isolated Gate Driver, 2.5kV, 14-LGA | Skyworks
MPN: SI8273AB-D-IM ✓ فعالSI8273AB-D-IM جائزہ
A gate driver is a power-conversion building block that level-shifts a low-power logic signal (typically 3.3 V or 5 V CMOS) to a high-current drive signal needed to charge and discharge the gate capacitance of a power semiconductor switch. Within the broader power-management hierarchy, isolated gate drivers sit between the control MCU and the power stage in switch-mode power supplies (SMPS), motor drives, and inverters. The SI8273AB-D-IM specifically targets half-bridge and high-side/low-side (HS/LS) topologies where logic and power grounds must remain galvanically isolated for safety or for floating high-side drive.
The Si827x family is engineered around proprietary silicon RF capacitive coupling, which yields best-in-class common-mode transient immunity (CMTI) of 200 kV/µs minimum (400 kV/µs typical) and tight part-to-part propagation delay matching. Selectable 3 V or 5 V UVLO thresholds protect downstream power switches against partial-gate-drive transients, while the integrated deglitch filter suppresses noisy PWM edges that can cause shoot-through in half-bridges. The −40 °C to +125 °C operating range and high noise immunity make these parts especially well suited to industrial environments with long motor cables and high dv/dt switching nodes.
Typical applications include isolated DC/DC converters, solar inverters, industrial motor drives (BLDC/PMSM), HEV/EV traction inverters, and digital-controlled class-D audio amplifiers where the logic domain and power-switching node must remain isolated to satisfy safety insulation and to tolerate harsh switching transients.
When routing this part, place the bypass capacitors (≥1 µF input-side, ≥10 µF driver-side) within 2 mm of their respective VDD pins to keep the high-side bootstrap supply stable during a 4 A gate-charge pulse. The exposed pad/LGA thermal pad must be soldered to a continuous ground pour to manage thermal rise under sustained switching at high PWM duty cycles.
کے لیے ڈراپ اِن متبادل SI8273AB-D-IM — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں SI8273AB-D-IM (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Common-Mode Transient Immunity (CMTI), Isolation Type, Number of Channels, Peak Output Current.
SI8273ABD-IM1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SI8273ABD-IMR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SI8273AB-IM3
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SI8273AB-IM1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SI8273ABD-IM
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →SI8273AB-D-IM زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Isolation Type | RF Capacitive Coupling (silicon isolation) |
| Number of Channels | 2 (HS/LS isolated) |
| Peak Output Current | 4 A source / 4 A sink |
| Input Supply Voltage (VDD) | 2.5 V to 5.5 V |
| Driver-Side Supply Voltage (VB/VB-VS) | Up to 25 V (per datasheet) |
| Withstand Voltage | 2.5 kVRMS (UL1577, VDE 0884-11) |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us min (400 kV/us typ) |
| Propagation Delay | 60 ns (max) per the datasheet |
| UVLO Thresholds | 3 V or 5 V selectable |
| Input Configuration | Single PWM or dual digital inputs |
| آپریٹنگ درجہ حرارت رینج | -40 °C to +125 °C |
| پیکیج | 14-LGA (5x5 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| AEC-Q100 Qualified | Not qualified in this -IM (industrial) variant |
SI8273AB-D-IM پن کنفیگریشن
| پن 1 | VDD — Input-side supply, 2.5 V to 5.5 V |
| پن 2 | GND1 — Input-side ground reference |
| پن 3 | PWM/INA — PWM input or Input A (single PWM mode) |
| پن 4 | INB — Input B (dual-input mode) |
| پن 5 | DT — Dead-time programming pin |
| پن 6 | DIS — Disable pin (active high) |
| پن 7 | NC — Not connected (per datasheet) |
| پن 8 | GND2 — Driver-side low-side ground |
| پن 9 | VS — High-side floating supply return |
| پن 10 | VB — High-side floating supply |
| پن 11 | VOUTA — Driver A output (gate drive) |
| پن 12 | VOUTB — Driver B output (gate drive) |
| پن 13 | VDD2 — Driver-side supply, 5 V to 25 V |
| پن 14 | EP — Exposed thermal pad, solder to ground pour |
عام استعمالات
SI8273AB-D-IM کے لیے موزوں ہے 6 ایپلیکیشنs: Isolated DC/DC Converters (Half-Bridge / Full-Bridge), Industrial Motor Drives (BLDC / PMSM), Solar Inverters (Grid-Tie PV String Inverters), Class D Audio Amplifiers (Digital Input Modules), EV Traction Inverters (Auxiliary and On-board Chargers), Uninterruptible Power Supplies (UPS).
Isolated DC/DC Converters (Half-Bridge / Full-Bridge)
The SI8273AB-D-IM is purpose-built for driving the primary-side MOSFETs of an isolated DC/DC converter where the control MCU is on the low-voltage side and the power switches must float on the high-voltage bus. Its 4 A peak gate-drive capability and 25 V driver-side supply comfortably switch 200 V-600 V MOSFETs at 100-500 kHz with 60 ns propagation. Each of the two isolated channels can drive one leg of a half-bridge or full-bridge, and the 2.5 kVRMS barrier eliminates the optocoupler, simplifying the isolation interface to a 14-LGA footprint. For a 48 V-to-5 V LLC topology, the Si8273AB-D-IM drops in cleanly and removes optocoupler aging concerns.
تجویز کردہ
Industrial Motor Drives (BLDC / PMSM)
The SI8273AB-D-IM integrates two isolated drivers into one 14-LGA package, perfectly suited to a 3-phase inverter leg of a BLDC or PMSM servo drive. With 4 A peak drive, the part can switch 600 V/1200 V IGBT modules or 200 V SiC FETs with sub-60 ns timing, while the 200 kV/us minimum CMTI rejects the large dv/dt transients produced by long motor cables. The selectable 3 V/5 V UVLO protects against partial-gate-drive during brownouts typical of industrial power-up sequences. In a 7.5 kW servo drive, the SI8273AB-D-IM replaces a discrete optocoupler + gate-driver circuit, cutting BOM count and improving reliability over long service lifetimes.
تجویز کردہ
Solar Inverters (Grid-Tie PV String Inverters)
Solar inverters require reinforced isolation between the MPPT high-voltage DC bus and the grid-connected low-voltage control side. The SI8273AB-D-IM with 2.5 kVRMS isolation per UL1577 and VDE 0884-11 basic insulation cleanly separates the ground domains of the DSC/TMS320 controller from the IGBT bridge switching at 600 V-1500 V DC. Its 4 A drive current handles the gate capacitance of high-current trench-gate IGBTs without external booster transistors, and the 200 kV/us CMTI tolerates the fast switching edges used for high-efficiency transformerless topologies. A 10 kW string inverter can implement three half-bridges using just six Si8273AB-D-IM chips with minimal layout area.
تجویز کردہ
Class D Audio Amplifiers (Digital Input Modules)
Class D audio amplifiers demand very tight inter-channel delay matching to keep the bridged output free of circulating current that would degrade efficiency and THD. The SI8273AB-D-IM provides ±5 ns part-to-part matching typical, directly translating into low dead-time distortion at the speaker output. With 4 A drive it switches 250 V/500 W MOSFETs at 400 kHz PWM, and the 2.5 kVRMS isolation lets the digital audio input stage share a ground plane with safety-certified user interfaces. The 14-LGA package allows the half-bridge pair to fit under a heatsink gap on a compact 2U amplifier chassis.
تجویز کردہ
EV Traction Inverters (Auxiliary and On-board Chargers)
The SI8273AB-D-IM (industrial grade) and the AEC-Q100-qualified Si8273AB-IM3 variant both serve as isolated gate drivers between the traction MCU and the 600 V-800 V SiC FET bridge in EV powertrains. The 4 A peak current is sufficient to charge a 50 nC SiC gate in approximately 12.5 ns, allowing 100 kHz+ switching for higher inverter power density. The 200 kV/us CMTI rating rejects the 50 kV/us switching transients typical of SiC switches. For onboard chargers (OBC) and DC-DC converters inside an EV, this part sits between the control CAN-FD node and the high-voltage power stage with the safety isolation required by IEC 61800-5-1.
تجویز کردہ
Uninterruptible Power Supplies (UPS)
In online UPS systems, the battery-to-AC inverter stage requires robust isolated gate driving that survives continuous switching at high voltage. The SI8273AB-D-IM provides the 2.5 kVRMS isolation needed between the digital signal processor (DSP) controller and the IGBT inverter switching the 384 V DC battery bus. The 4 A peak source/sink drive delivers fast turn-off to keep switching losses low in continuous 24/7 operation. Industrial-grade (-IM) temperature and the long-term reliability of the silicon isolation barrier extend service interval expectations beyond traditional optocoupler-based designs, lowering lifetime cost of ownership for data-center UPS deployments.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا SI8273AB-D-IM — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | SI8273ABD-IM1 | SI8273ABD-IMR | SI8273AB-IM3 | SI8273AB-IM1 | SI8273ABD-IM |
|---|---|---|---|---|---|---|
| Package | 14-LGA (5x5) | 14-LGA (5x5) - same | 14-LGA (5x5) - same | 14-LGA (5x5) - same | 14-LGA (5x5) - same | 14-LGA (5x5) - same |
| Brand | Skyworks | Skyworks - same | Skyworks - same | Skyworks - same | Skyworks - same | Skyworks - same |
| Peak Drive Current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Isolation Voltage | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS |
| Number of Channels | 2 (HS/LS isolated) | 2 | 2 | 2 | 2 | 2 |
| AEC-Q100 Qualification | Not qualified | Not qualified | Not qualified | AEC-Q100 Grade 1 | Not qualified | Not qualified |
| Propagation Delay | 60 ns max | 60 ns max | 60 ns max | 60 ns max | 60 ns max | 60 ns max |
| CMTI | 200 kV/us min | 200 kV/us min | 200 kV/us min | 200 kV/us min | 200 kV/us min | 200 kV/us min |
| Input Supply Voltage | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V |
| Packaging Code | IM (industrial, tray) | IM1 (tape and reel) | IMR (reel) | IM3 (automotive) | IM1 (tape and reel) | IM (industrial, tray) |
اہم امتیازی خصوصیات
- Silicon RF-isolation eliminates optocoupler aging (بمقابلہTraditional HCPL-3120 optocoupler-based gate drivers)
- 4 A dual-channel driver in compact 14-LGA (بمقابلہTwo SI8271 (single-channel) chips in SOIC-8 each)
- AEC-Q100 upgrade path within same footprint (بمقابلہSwitching to a different vendor when AEC-Q100 is required)
ڈیزائن نوٹس
Place the input-side bypass capacitor (>=1 uF X5R/X7R 0402/0603) within 2 mm of the VDD pin (pin 1) and connect directly to GND1 (pin 2) with a short trace. The exposed pad (pin 14) of the 14-LGA must be soldered to a continuous ground pour with at least 6 thermal vias to the next layer; failure to solder the EP creates a thermal and electrical-mechanical reliability hazard and reduces isolation stability under thermal cycling.
At 200 kHz switching and continuous 2 A average drive into a 30 nC MOSFET gate pair (Q_g = 30 nC), the SI8273AB-D-IM dissipates roughly CV^2 * f * Q_g contributions plus quiescent, which can reach 0.4 W-0.6 W sustained. Estimated: using a theta_JA of approximately 35 C/W on a 1 oz copper 2-layer board with a properly soldered exposed pad, this yields a 14-21 C junction-to-ambient temperature rise. For higher-ambient applications (>85 C), upgrade to a 4-layer board and add a top-side copper pour beneath the LGA.
Do not confuse the SI8273AB-D-IM (industrial -40 C to +125 C, LGA-14, 2.5 kV) with the functionally-similar SI8273AB-IS1 (SOIC-16 wide-body, 5 kV reinforced). Pinout and footprint differ entirely; substituting one for the other requires PCB rework. UVLO must be configured (3 V or 5 V) by external resistor or selection before applying power; misconfigured UVLO will trigger false fault shutdowns or, worse, drive a half-bridge switch in an undefined state. Always enable the dead-time (DT) function with the recommended capacitor value per the Si827x data sheet to prevent shoot-through in half-bridge applications.
تعمیل کی معلومات
Industrial grade variant (no AEC-Q100). AEC-Q100 qualified sibling SI8273AB-IM3 available. RoHS per Skyworks Si827x datasheet declaration, lead-free reflow 260 C per J-STD-020.
