SI8273AB-D-IM - 4A Isolated Gate Driver, 2.5kV, 14-LGA | Skyworks
부품 번호: SI8273AB-D-IM ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.05 | $30.50 |
| 100 | $2.71 | $271.00 |
| 500 | $2.36 | $1,180.00 |
| 1,000 | $2.04 | $2,040.00 |
SI8273AB-D-IM 개요
A gate driver is a power-conversion building block that level-shifts a low-power logic signal (typically 3.3 V or 5 V CMOS) to a high-current drive signal needed to charge and discharge the gate capacitance of a power semiconductor switch. Within the broader power-management hierarchy, isolated gate drivers sit between the control MCU and the power stage in switch-mode power supplies (SMPS), motor drives, and inverters. The SI8273AB-D-IM specifically targets half-bridge and high-side/low-side (HS/LS) topologies where logic and power grounds must remain galvanically isolated for safety or for floating high-side drive.
The Si827x family is engineered around proprietary silicon RF capacitive coupling, which yields best-in-class common-mode transient immunity (CMTI) of 200 kV/µs minimum (400 kV/µs typical) and tight part-to-part propagation delay matching. Selectable 3 V or 5 V UVLO thresholds protect downstream power switches against partial-gate-drive transients, while the integrated deglitch filter suppresses noisy PWM edges that can cause shoot-through in half-bridges. The −40 °C to +125 °C operating range and high noise immunity make these parts especially well suited to industrial environments with long motor cables and high dv/dt switching nodes.
Typical applications include isolated DC/DC converters, solar inverters, industrial motor drives (BLDC/PMSM), HEV/EV traction inverters, and digital-controlled class-D audio amplifiers where the logic domain and power-switching node must remain isolated to satisfy safety insulation and to tolerate harsh switching transients.
When routing this part, place the bypass capacitors (≥1 µF input-side, ≥10 µF driver-side) within 2 mm of their respective VDD pins to keep the high-side bootstrap supply stable during a 4 A gate-charge pulse. The exposed pad/LGA thermal pad must be soldered to a continuous ground pour to manage thermal rise under sustained switching at high PWM duty cycles.
드롭인 대체품: SI8273AB-D-IM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: SI8273AB-D-IM (동일 폼 팩터 및 풋프린트) — 차이점: Common-Mode Transient Immunity (CMTI), Isolation Type, Number of Channels, Peak Output Current.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SI8273ABD-IM1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273ABD-IMR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273AB-IM3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273AB-IM1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273ABD-IM
✅ 드롭인✓ 재고 있음
$3.25 / 개
데이터시트 보기 →SI8273AB-D-IM 최대 정격 & 전기적 특성
| Isolation Type | RF Capacitive Coupling (silicon isolation) |
| Number of Channels | 2 (HS/LS isolated) |
| Peak Output Current | 4 A source / 4 A sink |
| Input Supply Voltage (VDD) | 2.5 V to 5.5 V |
| Driver-Side Supply Voltage (VB/VB-VS) | Up to 25 V (per datasheet) |
| Withstand Voltage | 2.5 kVRMS (UL1577, VDE 0884-11) |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us min (400 kV/us typ) |
| Propagation Delay | 60 ns (max) per the datasheet |
| UVLO Thresholds | 3 V or 5 V selectable |
| Input Configuration | Single PWM or dual digital inputs |
| 동작 온도 범위 | -40 °C to +125 °C |
| 패키지 | 14-LGA (5x5 mm) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| AEC-Q100 Qualified | Not qualified in this -IM (industrial) variant |
SI8273AB-D-IM 핀 구성
| 핀 1 | VDD — Input-side supply, 2.5 V to 5.5 V |
| 핀 2 | GND1 — Input-side ground reference |
| 핀 3 | PWM/INA — PWM input or Input A (single PWM mode) |
| 핀 4 | INB — Input B (dual-input mode) |
| 핀 5 | DT — Dead-time programming pin |
| 핀 6 | DIS — Disable pin (active high) |
| 핀 7 | NC — Not connected (per datasheet) |
| 핀 8 | GND2 — Driver-side low-side ground |
| 핀 9 | VS — High-side floating supply return |
| 핀 10 | VB — High-side floating supply |
| 핀 11 | VOUTA — Driver A output (gate drive) |
| 핀 12 | VOUTB — Driver B output (gate drive) |
| 핀 13 | VDD2 — Driver-side supply, 5 V to 25 V |
| 핀 14 | EP — Exposed thermal pad, solder to ground pour |
일반적인 애플리케이션
SI8273AB-D-IM 적합 용도: 6 애플리케이션s: Isolated DC/DC Converters (Half-Bridge / Full-Bridge), Industrial Motor Drives (BLDC / PMSM), Solar Inverters (Grid-Tie PV String Inverters), Class D Audio Amplifiers (Digital Input Modules), EV Traction Inverters (Auxiliary and On-board Chargers), Uninterruptible Power Supplies (UPS).
Isolated DC/DC Converters (Half-Bridge / Full-Bridge)
The SI8273AB-D-IM is purpose-built for driving the primary-side MOSFETs of an isolated DC/DC converter where the control MCU is on the low-voltage side and the power switches must float on the high-voltage bus. Its 4 A peak gate-drive capability and 25 V driver-side supply comfortably switch 200 V-600 V MOSFETs at 100-500 kHz with 60 ns propagation. Each of the two isolated channels can drive one leg of a half-bridge or full-bridge, and the 2.5 kVRMS barrier eliminates the optocoupler, simplifying the isolation interface to a 14-LGA footprint. For a 48 V-to-5 V LLC topology, the Si8273AB-D-IM drops in cleanly and removes optocoupler aging concerns.
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Industrial Motor Drives (BLDC / PMSM)
The SI8273AB-D-IM integrates two isolated drivers into one 14-LGA package, perfectly suited to a 3-phase inverter leg of a BLDC or PMSM servo drive. With 4 A peak drive, the part can switch 600 V/1200 V IGBT modules or 200 V SiC FETs with sub-60 ns timing, while the 200 kV/us minimum CMTI rejects the large dv/dt transients produced by long motor cables. The selectable 3 V/5 V UVLO protects against partial-gate-drive during brownouts typical of industrial power-up sequences. In a 7.5 kW servo drive, the SI8273AB-D-IM replaces a discrete optocoupler + gate-driver circuit, cutting BOM count and improving reliability over long service lifetimes.
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Solar Inverters (Grid-Tie PV String Inverters)
Solar inverters require reinforced isolation between the MPPT high-voltage DC bus and the grid-connected low-voltage control side. The SI8273AB-D-IM with 2.5 kVRMS isolation per UL1577 and VDE 0884-11 basic insulation cleanly separates the ground domains of the DSC/TMS320 controller from the IGBT bridge switching at 600 V-1500 V DC. Its 4 A drive current handles the gate capacitance of high-current trench-gate IGBTs without external booster transistors, and the 200 kV/us CMTI tolerates the fast switching edges used for high-efficiency transformerless topologies. A 10 kW string inverter can implement three half-bridges using just six Si8273AB-D-IM chips with minimal layout area.
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Class D Audio Amplifiers (Digital Input Modules)
Class D audio amplifiers demand very tight inter-channel delay matching to keep the bridged output free of circulating current that would degrade efficiency and THD. The SI8273AB-D-IM provides ±5 ns part-to-part matching typical, directly translating into low dead-time distortion at the speaker output. With 4 A drive it switches 250 V/500 W MOSFETs at 400 kHz PWM, and the 2.5 kVRMS isolation lets the digital audio input stage share a ground plane with safety-certified user interfaces. The 14-LGA package allows the half-bridge pair to fit under a heatsink gap on a compact 2U amplifier chassis.
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EV Traction Inverters (Auxiliary and On-board Chargers)
The SI8273AB-D-IM (industrial grade) and the AEC-Q100-qualified Si8273AB-IM3 variant both serve as isolated gate drivers between the traction MCU and the 600 V-800 V SiC FET bridge in EV powertrains. The 4 A peak current is sufficient to charge a 50 nC SiC gate in approximately 12.5 ns, allowing 100 kHz+ switching for higher inverter power density. The 200 kV/us CMTI rating rejects the 50 kV/us switching transients typical of SiC switches. For onboard chargers (OBC) and DC-DC converters inside an EV, this part sits between the control CAN-FD node and the high-voltage power stage with the safety isolation required by IEC 61800-5-1.
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Uninterruptible Power Supplies (UPS)
In online UPS systems, the battery-to-AC inverter stage requires robust isolated gate driving that survives continuous switching at high voltage. The SI8273AB-D-IM provides the 2.5 kVRMS isolation needed between the digital signal processor (DSP) controller and the IGBT inverter switching the 384 V DC battery bus. The 4 A peak source/sink drive delivers fast turn-off to keep switching losses low in continuous 24/7 operation. Industrial-grade (-IM) temperature and the long-term reliability of the silicon isolation barrier extend service interval expectations beyond traditional optocoupler-based designs, lowering lifetime cost of ownership for data-center UPS deployments.
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추천 제품 요약
엔지니어링 참조 데이터: SI8273AB-D-IM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SI8273ABD-IM1 | SI8273ABD-IMR | SI8273AB-IM3 | SI8273AB-IM1 | SI8273ABD-IM |
|---|---|---|---|---|---|---|
| Package | 14-LGA (5x5) | 14-LGA (5x5) - same | 14-LGA (5x5) - same | 14-LGA (5x5) - same | 14-LGA (5x5) - same | 14-LGA (5x5) - same |
| Brand | Skyworks | Skyworks - same | Skyworks - same | Skyworks - same | Skyworks - same | Skyworks - same |
| Peak Drive Current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Isolation Voltage | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS | 2.5 kVRMS |
| Number of Channels | 2 (HS/LS isolated) | 2 | 2 | 2 | 2 | 2 |
| AEC-Q100 Qualification | Not qualified | Not qualified | Not qualified | AEC-Q100 Grade 1 | Not qualified | Not qualified |
| Propagation Delay | 60 ns max | 60 ns max | 60 ns max | 60 ns max | 60 ns max | 60 ns max |
| CMTI | 200 kV/us min | 200 kV/us min | 200 kV/us min | 200 kV/us min | 200 kV/us min | 200 kV/us min |
| Input Supply Voltage | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V | 2.5 V to 5.5 V |
| Packaging Code | IM (industrial, tray) | IM1 (tape and reel) | IMR (reel) | IM3 (automotive) | IM1 (tape and reel) | IM (industrial, tray) |
주요 차별점
- Silicon RF-isolation eliminates optocoupler aging (vs Traditional HCPL-3120 optocoupler-based gate drivers)
- 4 A dual-channel driver in compact 14-LGA (vs Two SI8271 (single-channel) chips in SOIC-8 each)
- AEC-Q100 upgrade path within same footprint (vs Switching to a different vendor when AEC-Q100 is required)
설계 노트
Place the input-side bypass capacitor (>=1 uF X5R/X7R 0402/0603) within 2 mm of the VDD pin (pin 1) and connect directly to GND1 (pin 2) with a short trace. The exposed pad (pin 14) of the 14-LGA must be soldered to a continuous ground pour with at least 6 thermal vias to the next layer; failure to solder the EP creates a thermal and electrical-mechanical reliability hazard and reduces isolation stability under thermal cycling.
At 200 kHz switching and continuous 2 A average drive into a 30 nC MOSFET gate pair (Q_g = 30 nC), the SI8273AB-D-IM dissipates roughly CV^2 * f * Q_g contributions plus quiescent, which can reach 0.4 W-0.6 W sustained. Estimated: using a theta_JA of approximately 35 C/W on a 1 oz copper 2-layer board with a properly soldered exposed pad, this yields a 14-21 C junction-to-ambient temperature rise. For higher-ambient applications (>85 C), upgrade to a 4-layer board and add a top-side copper pour beneath the LGA.
Do not confuse the SI8273AB-D-IM (industrial -40 C to +125 C, LGA-14, 2.5 kV) with the functionally-similar SI8273AB-IS1 (SOIC-16 wide-body, 5 kV reinforced). Pinout and footprint differ entirely; substituting one for the other requires PCB rework. UVLO must be configured (3 V or 5 V) by external resistor or selection before applying power; misconfigured UVLO will trigger false fault shutdowns or, worse, drive a half-bridge switch in an undefined state. Always enable the dead-time (DT) function with the recommended capacitor value per the Si827x data sheet to prevent shoot-through in half-bridge applications.
규정 준수 정보
Industrial grade variant (no AEC-Q100). AEC-Q100 qualified sibling SI8273AB-IM3 available. RoHS per Skyworks Si827x datasheet declaration, lead-free reflow 260 C per J-STD-020.
