TJ60S06M3L(T6L1,NQ - 60V 60A P-Ch MOSFET DPAK+ | Toshiba
MPN: TJ60S06M3L(T6L1NQ ✓ فعالTJ60S06M3L(T6L1NQ جائزہ
A P-channel MOSFET (P-FET) is a type of metal-oxide-semiconductor field-effect transistor in which the body-source p-n junction is reversed-biased and majority-carrier conduction is by holes rather than electrons. P-channel MOSFETs belong to the broader category of power MOSFETs (MOSFET -> discrete semiconductor -> power transistor), and they occupy a unique role in high-side switching because their source sits at the load supply rail, simplifying gate drive when the load must be switched to ground. P-FETs are commonly used as reverse-polarity protection devices, high-side load switches, and synchronous-rectifier replacements in low-voltage buck converters.
Key features of the TJ60S06M3L include a maximum drain-source on-resistance RDS(ON) of 14.5 mOhm at VGS = -10 V, a low input capacitance Ciss of 7760 pF that keeps gate-drive losses manageable, and an enhancement-mode threshold that allows direct logic-level gate drive from -3.3 V or -5 V microcontrollers. The DPAK+ tab provides a low-thermal-resistance path (junction-to-case) suitable for continuous high-current operation with modest PCB copper area.
The architecture uses Toshiba's latest-generation U-MOS trench cell, which lowers specific on-resistance versus older planar P-FET generations, and integrated gate-protection circuitry to limit avalanche energy. Compared with a mechanical relay, the MOSFET offers silent, fast (<50 ns half-controlled) switching and zero contact bounce, while compared with a PNP bipolar transistor it eliminates base-drive current and the saturation-voltage knee.
Typical applications for this part include automotive reverse-battery protection, DC-DC converter high-side switches, motor-driver H-bridges (low-side or high-side position), and switching voltage regulators in industrial power systems. Because of its 60 V rating it can replace mechanical relays in 24 V and 48 V automotive and industrial buses.
Design tip: when using the TJ60S06M3L as a reverse-polarity protection FET, ensure that the gate is pulled to ground through a resistor when the system is off; floating gates can leave the FET in an undefined state and create leakage paths. Also note that the AEC-Q101 grade makes this part suitable for under-hood automotive designs where ambient temperatures can reach 125 C.
کے لیے ڈراپ اِن متبادل TJ60S06M3L(T6L1NQ — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں TJ60S06M3L(T6L1NQ (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Input Capacitance (Ciss), Package, Technology.
TJ60S06M3LT6L1.NQ
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →TJ60S06M3L(TE12L1,NQ
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
TJ60S06M3L(T6L1,ND
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NTR4101PT1G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
TJ60S06M3L(T6L1NQ زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| ٹرانزسٹر کی قسم | P-Channel MOSFET |
| Technology | Silicon U-MOS (trench) |
| Drain-Source Voltage (VDSS) | -60 V |
| Gate-Source Voltage (VGSS) | +10 V / -20 V |
| Continuous Drain Current (ID) | -60 A (Tc) |
| Power Dissipation (PD) | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Input Capacitance (Ciss) | 7760 pF typ |
| Leakage Current (IDSS) Max | -10 uA (VDS = -40 V) |
| آپریٹنگ درجہ حرارت رینج | -55 C to +175 C |
| پیکیج | DPAK+ (TO-252-3) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant |
TJ60S06M3L(T6L1NQ پن کنفیگریشن
| پن 1 | Gate — Gate control input (drive -3 to -10 V relative to source) |
| پن 2 | Drain — Drain connection (also tied internally to thermal tab) |
| پن 3 | Source — Source connection |
| پن Tab | Drain — Thermal tab - internally connected to pin 2 (Drain) |
محفوظ آپریٹنگ ایریا (TJ60S06M3L)
عام استعمالات
TJ60S06M3L(T6L1NQ کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive Reverse-Polarity Protection, High-Side Load Switch, Synchronous Rectifier in Buck Converters, DC Motor Driver H-Bridge (High-Side), Switching Voltage Regulator (Industrial - 5 V to 24 V Rails), Battery Disconnect Switch in UPS / Energy Storage.
Automotive Reverse-Polarity Protection
The TJ60S06M3L(T6L1,NQ is a strong fit for reverse-polarity protection in 12 V and 24 V automotive systems because of its -60 V VDS rating, 11.2 mOhm typical RDS(ON), and AEC-Q101 stress qualification for under-hood environments. In a typical application the MOSFET's source connects to the battery positive, the drain to the downstream load, and the gate is pulled to ground through a high-value resistor (typically 100 kOhm) so the FET remains off when no supply is connected. When the battery is connected with correct polarity, a Zener or simple resistor-divider referenced to VIN drives the gate above the threshold to fully enhance the channel. At a 10 A continuous load the device dissipates roughly 1.1 W, far below its 100 W rating, and conduction loss is dramatically lower than a Schottky diode reverse-protection scheme. The P-channel topology eliminates the need for a charge pump, simplifying the BOM.
تجویز کردہ
High-Side Load Switch
The TJ60S06M3L(T6L1,NQ serves well as a high-side load switch in industrial and automotive power distribution units where multiple subsystems must be independently enabled and disabled. Its P-channel structure means a low-side GPIO signal (0 V to +3.3 V or +5 V) is sufficient to fully enhance the device, so no charge pump or gate-driver IC is required for 12 V rails. Designers should place a TVS diode across drain-source to clamp inductive transients when switching solenoids or motors, and a small gate-source resistor (100 kΩ) prevents unintended turn-on from leakage currents. The DPAK+ package thermal tab should be soldered to at least 1 square inch of 2 oz copper to keep junction temperature within safe limits during continuous 30 A loads.
تجویز کردہ
Synchronous Rectifier in Buck Converters
In low-voltage buck converters the TJ60S06M3L(T6L1,NQ can serve as the synchronous rectifier on the low-side or as a high-side switch, thanks to its 11.2 mOhm RDS(ON) and 7760 pF input capacitance. The relatively high Ciss requires a gate driver capable of sourcing/sinking at least 1 A peak to achieve sub-50 ns switching transitions, but at switching frequencies below 200 kHz the device's gate charge is acceptable. AEC-Q101 qualification allows the converter to be deployed in automotive ECU power trees where reliability under thermal cycling is mandatory. Compared with a Schottky rectifier the MOSFET cuts conduction loss by 50-70% but requires careful timing control to avoid shoot-through.
تجویز کردہ
DC Motor Driver H-Bridge (High-Side)
The TJ60S06M3L(T6L1,NQ is suitable for the high-side positions of an H-bridge driving 12 V brushed DC motors up to about 30 A continuous. Because it is a P-channel device, the source sits at V+ and the drain drives the motor terminal, eliminating the need for a bootstrap supply that an N-channel high-side switch would require. Pair it with N-channel MOSFETs on the low-side (e.g., STD10NF10T4 from the XAIPART catalog) for a complete H-bridge. Dead-time insertion in the control firmware avoids shoot-through; the 50 ns switching speed of the TJ60S06M3L(T6L1,NQ supports PWM frequencies up to 50 kHz with reasonable dead-time.
تجویز کردہ
Switching Voltage Regulator (Industrial - 5 V to 24 V Rails)
Industrial switching voltage regulators operating from 12 V or 24 V input rails can use the TJ60S06M3L(T6L1,NQ as the main switch or synchronous rectifier in topologies up to about 60 W output power. The -60 V VDS rating gives comfortable margin above 24 V nominal input plus transient ringing, and the 100 W power dissipation rating allows sustained operation with proper PCB thermal design. Use the device in continuous-conduction-mode buck or boost topologies where its RDS(ON) of 11.2 mOhm yields efficiency above 95% at moderate loads. Snubber networks across drain-source mitigate voltage spikes from leakage inductance in the power inductor.
تجویز کردہ
Battery Disconnect Switch in UPS / Energy Storage
The TJ60S06M3L(T6L1,NQ works as a low-loss battery disconnect switch in UPS modules and small-scale energy-storage systems. Its 60 A continuous current rating comfortably handles inverter surge currents, while its 11.2 mOhm RDS(ON) keeps conduction loss at about 0.7 W per FET at 8 A - far lower than a mechanical contactor's contact resistance. Use it with a simple gate-driver circuit (push-pull BJT pair or dedicated gate-driver IC) to control the MOSFET from a logic-level signal. Add a TVS diode across drain-source for hot-plug protection and a fuse in series for short-circuit protection.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا TJ60S06M3L(T6L1NQ — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | TJ60S06M3L | TJ60S06M3L(TE12L1,NQ | TJ60S06M3L(T6L1,ND | NTR4101PT1G |
|---|---|---|---|---|---|
| Brand | Toshiba | Toshiba | Toshiba | Toshiba | onsemi |
| Package | DPAK+ (TO-252-3) | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same | DPAK (TO-252) - same footprint |
| Drain-Source Voltage (VDSS) | -60 V | -60 V | -60 V | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A | -60 A | -60 A | -60 A | -62 A (+3%) |
| RDS(ON) typ @ VGS=-10V | 11.2 mOhm | 11.2 mOhm | 11.2 mOhm | 11.2 mOhm | ~20 mOhm (+78%) |
| Power Dissipation (PD) | 100 W | 100 W | 100 W | 100 W | 60 W (-40%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
اہم امتیازی خصوصیات
- Lower RDS(ON) versus comparable cross-brand P-FETs (بمقابلہNTR4101PT1G)
- Higher power dissipation rating in the same footprint (بمقابلہNTR4101PT1G)
- U-MOS process technology provides better Figure of Merit (بمقابلہIRFR9024N (legacy planar P-FET))
ڈیزائن نوٹس
Estimated: at 30 A continuous drain current and VGS = -10 V, conduction loss in the TJ60S06M3L(T6L1,NQ is approximately 30 A x 30 A x 0.0112 Ohm = 10.1 W. With proper PCB copper area (>=1 square inch of 2 oz pour) the DPAK+ achieves roughly 40 C/W junction-to-ambient thermal resistance, producing a 400 C temperature rise - exceeding the 175 C maximum junction temperature. To sustain 30 A, derate to about 15-18 A continuous at 25 C ambient, or use forced-air cooling. For higher current designs, parallel two TJ60S06M3L(T6L1,NQ devices with 10 mOhm gate-source resistors for current balancing.
When using the TJ60S06M3L(T6L1,NQ as a high-side P-channel switch, do not leave the gate floating. A floating gate can drift above the threshold and partially enhance the channel, creating a parasitic load path. Always provide a defined gate reference: either a pull-down resistor to ground (for normally-on behavior when VIN is absent) or a gate-driver that actively pulls the gate. Also verify that VGS does not exceed +10 V / -20 V absolute maximum, otherwise the gate oxide can be permanently damaged - common when an inductive load's ringing couples back through the Miller capacitance.
For DPAK+ footprint, use at least 1 square inch of 2 oz copper on the drain tab to stay within thermal limits. Place a 4-7 mm wide copper trace on the source pin to handle 60 A continuous current without significant resistive heating. Minimize the gate-loop area by routing the gate trace directly over a ground plane; this reduces dv/dt-induced turn-on (Miller effect) in switching applications. Place a TVS diode (e.g., SMBJ58A) within 5 mm of drain-source to clamp load-dump transients in automotive designs.
تعمیل کی معلومات
AEC-Q101 (automotive discrete) qualified per Toshiba product listing and Arrow distributor page. RoHS and lead-free confirmed via Toshiba compliance documentation.
