TJ60S06M3L(T6L1,NQ - 60V 60A P-Ch MOSFET DPAK+ | Toshiba
MPN： TJ60S06M3L(T6L1NQ ✓ 啟用中TJ60S06M3L(T6L1NQ 概覽
A P-channel MOSFET (P-FET) is a type of metal-oxide-semiconductor field-effect transistor in which the body-source p-n junction is reversed-biased and majority-carrier conduction is by holes rather than electrons. P-channel MOSFETs belong to the broader category of power MOSFETs (MOSFET -> discrete semiconductor -> power transistor), and they occupy a unique role in high-side switching because their source sits at the load supply rail, simplifying gate drive when the load must be switched to ground. P-FETs are commonly used as reverse-polarity protection devices, high-side load switches, and synchronous-rectifier replacements in low-voltage buck converters.
Key features of the TJ60S06M3L include a maximum drain-source on-resistance RDS(ON) of 14.5 mOhm at VGS = -10 V, a low input capacitance Ciss of 7760 pF that keeps gate-drive losses manageable, and an enhancement-mode threshold that allows direct logic-level gate drive from -3.3 V or -5 V microcontrollers. The DPAK+ tab provides a low-thermal-resistance path (junction-to-case) suitable for continuous high-current operation with modest PCB copper area.
The architecture uses Toshiba's latest-generation U-MOS trench cell, which lowers specific on-resistance versus older planar P-FET generations, and integrated gate-protection circuitry to limit avalanche energy. Compared with a mechanical relay, the MOSFET offers silent, fast (<50 ns half-controlled) switching and zero contact bounce, while compared with a PNP bipolar transistor it eliminates base-drive current and the saturation-voltage knee.
Typical applications for this part include automotive reverse-battery protection, DC-DC converter high-side switches, motor-driver H-bridges (low-side or high-side position), and switching voltage regulators in industrial power systems. Because of its 60 V rating it can replace mechanical relays in 24 V and 48 V automotive and industrial buses.
Design tip: when using the TJ60S06M3L as a reverse-polarity protection FET, ensure that the gate is pulled to ground through a resistor when the system is off; floating gates can leave the FET in an undefined state and create leakage paths. Also note that the AEC-Q101 grade makes this part suitable for under-hood automotive designs where ambient temperatures can reach 125 C.
直接替換替代品，適用於 TJ60S06M3L(T6L1NQ — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： TJ60S06M3L(T6L1NQ （相同外形與佔位） — 差異在於 Input Capacitance (Ciss), Package, Technology.
TJ60S06M3LT6L1.NQ
✅ 直接替換聯絡詢價
查看資料表 →TJ60S06M3L(TE12L1,NQ
✅ 直接替換📋 參考替代品（不在目錄中）
TJ60S06M3L(T6L1,ND
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
NTR4101PT1G
✅ 直接替換📋 參考替代品（不在目錄中）
TJ60S06M3L(T6L1NQ 最大額定值與電氣特性
| 電晶體類型 | P-Channel MOSFET |
| Technology | Silicon U-MOS (trench) |
| Drain-Source Voltage (VDSS) | -60 V |
| Gate-Source Voltage (VGSS) | +10 V / -20 V |
| Continuous Drain Current (ID) | -60 A (Tc) |
| Power Dissipation (PD) | 100 W (Tc) |
| RDS(ON) Max @ VGS = -10 V | 14.5 mOhm |
| RDS(ON) Typ @ VGS = -10 V | 11.2 mOhm |
| Gate Threshold Voltage (Vth) | -3.0 V typ (VDS = -1 mA, enhancement mode) |
| Input Capacitance (Ciss) | 7760 pF typ |
| Leakage Current (IDSS) Max | -10 uA (VDS = -40 V) |
| 工作溫度範圍 | -55 C to +175 C |
| 封裝 | DPAK+ (TO-252-3) |
| 安裝類型 | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS 狀態 | Compliant |
TJ60S06M3L(T6L1NQ 腳位配置
| 腳位 1 | Gate — Gate control input (drive -3 to -10 V relative to source) |
| 腳位 2 | Drain — Drain connection (also tied internally to thermal tab) |
| 腳位 3 | Source — Source connection |
| 腳位 Tab | Drain — Thermal tab - internally connected to pin 2 (Drain) |
安全工作區 (TJ60S06M3L)
典型應用
TJ60S06M3L(T6L1NQ 適用於 6 應用s: Automotive Reverse-Polarity Protection, High-Side Load Switch, Synchronous Rectifier in Buck Converters, DC Motor Driver H-Bridge (High-Side), Switching Voltage Regulator (Industrial - 5 V to 24 V Rails), Battery Disconnect Switch in UPS / Energy Storage.
Automotive Reverse-Polarity Protection
The TJ60S06M3L(T6L1,NQ is a strong fit for reverse-polarity protection in 12 V and 24 V automotive systems because of its -60 V VDS rating, 11.2 mOhm typical RDS(ON), and AEC-Q101 stress qualification for under-hood environments. In a typical application the MOSFET's source connects to the battery positive, the drain to the downstream load, and the gate is pulled to ground through a high-value resistor (typically 100 kOhm) so the FET remains off when no supply is connected. When the battery is connected with correct polarity, a Zener or simple resistor-divider referenced to VIN drives the gate above the threshold to fully enhance the channel. At a 10 A continuous load the device dissipates roughly 1.1 W, far below its 100 W rating, and conduction loss is dramatically lower than a Schottky diode reverse-protection scheme. The P-channel topology eliminates the need for a charge pump, simplifying the BOM.
推薦
High-Side Load Switch
The TJ60S06M3L(T6L1,NQ serves well as a high-side load switch in industrial and automotive power distribution units where multiple subsystems must be independently enabled and disabled. Its P-channel structure means a low-side GPIO signal (0 V to +3.3 V or +5 V) is sufficient to fully enhance the device, so no charge pump or gate-driver IC is required for 12 V rails. Designers should place a TVS diode across drain-source to clamp inductive transients when switching solenoids or motors, and a small gate-source resistor (100 kΩ) prevents unintended turn-on from leakage currents. The DPAK+ package thermal tab should be soldered to at least 1 square inch of 2 oz copper to keep junction temperature within safe limits during continuous 30 A loads.
推薦
Synchronous Rectifier in Buck Converters
In low-voltage buck converters the TJ60S06M3L(T6L1,NQ can serve as the synchronous rectifier on the low-side or as a high-side switch, thanks to its 11.2 mOhm RDS(ON) and 7760 pF input capacitance. The relatively high Ciss requires a gate driver capable of sourcing/sinking at least 1 A peak to achieve sub-50 ns switching transitions, but at switching frequencies below 200 kHz the device's gate charge is acceptable. AEC-Q101 qualification allows the converter to be deployed in automotive ECU power trees where reliability under thermal cycling is mandatory. Compared with a Schottky rectifier the MOSFET cuts conduction loss by 50-70% but requires careful timing control to avoid shoot-through.
推薦
DC Motor Driver H-Bridge (High-Side)
The TJ60S06M3L(T6L1,NQ is suitable for the high-side positions of an H-bridge driving 12 V brushed DC motors up to about 30 A continuous. Because it is a P-channel device, the source sits at V+ and the drain drives the motor terminal, eliminating the need for a bootstrap supply that an N-channel high-side switch would require. Pair it with N-channel MOSFETs on the low-side (e.g., STD10NF10T4 from the XAIPART catalog) for a complete H-bridge. Dead-time insertion in the control firmware avoids shoot-through; the 50 ns switching speed of the TJ60S06M3L(T6L1,NQ supports PWM frequencies up to 50 kHz with reasonable dead-time.
推薦
Switching Voltage Regulator (Industrial - 5 V to 24 V Rails)
Industrial switching voltage regulators operating from 12 V or 24 V input rails can use the TJ60S06M3L(T6L1,NQ as the main switch or synchronous rectifier in topologies up to about 60 W output power. The -60 V VDS rating gives comfortable margin above 24 V nominal input plus transient ringing, and the 100 W power dissipation rating allows sustained operation with proper PCB thermal design. Use the device in continuous-conduction-mode buck or boost topologies where its RDS(ON) of 11.2 mOhm yields efficiency above 95% at moderate loads. Snubber networks across drain-source mitigate voltage spikes from leakage inductance in the power inductor.
推薦
Battery Disconnect Switch in UPS / Energy Storage
The TJ60S06M3L(T6L1,NQ works as a low-loss battery disconnect switch in UPS modules and small-scale energy-storage systems. Its 60 A continuous current rating comfortably handles inverter surge currents, while its 11.2 mOhm RDS(ON) keeps conduction loss at about 0.7 W per FET at 8 A - far lower than a mechanical contactor's contact resistance. Use it with a simple gate-driver circuit (push-pull BJT pair or dedicated gate-driver IC) to control the MOSFET from a logic-level signal. Add a TVS diode across drain-source for hot-plug protection and a fuse in series for short-circuit protection.
推薦
推薦產品摘要
工程參考資料，適用於 TJ60S06M3L(T6L1NQ — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | TJ60S06M3L | TJ60S06M3L(TE12L1,NQ | TJ60S06M3L(T6L1,ND | NTR4101PT1G |
|---|---|---|---|---|---|
| Brand | Toshiba | Toshiba | Toshiba | Toshiba | onsemi |
| Package | DPAK+ (TO-252-3) | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same | DPAK+ (TO-252-3) - same | DPAK (TO-252) - same footprint |
| Drain-Source Voltage (VDSS) | -60 V | -60 V | -60 V | -60 V | -60 V |
| Continuous Drain Current (ID) | -60 A | -60 A | -60 A | -60 A | -62 A (+3%) |
| RDS(ON) typ @ VGS=-10V | 11.2 mOhm | 11.2 mOhm | 11.2 mOhm | 11.2 mOhm | ~20 mOhm (+78%) |
| Power Dissipation (PD) | 100 W | 100 W | 100 W | 100 W | 60 W (-40%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
主要差異化特點
- Lower RDS(ON) versus comparable cross-brand P-FETs (對比NTR4101PT1G)
- Higher power dissipation rating in the same footprint (對比NTR4101PT1G)
- U-MOS process technology provides better Figure of Merit (對比IRFR9024N (legacy planar P-FET))
設計說明
Estimated: at 30 A continuous drain current and VGS = -10 V, conduction loss in the TJ60S06M3L(T6L1,NQ is approximately 30 A x 30 A x 0.0112 Ohm = 10.1 W. With proper PCB copper area (>=1 square inch of 2 oz pour) the DPAK+ achieves roughly 40 C/W junction-to-ambient thermal resistance, producing a 400 C temperature rise - exceeding the 175 C maximum junction temperature. To sustain 30 A, derate to about 15-18 A continuous at 25 C ambient, or use forced-air cooling. For higher current designs, parallel two TJ60S06M3L(T6L1,NQ devices with 10 mOhm gate-source resistors for current balancing.
When using the TJ60S06M3L(T6L1,NQ as a high-side P-channel switch, do not leave the gate floating. A floating gate can drift above the threshold and partially enhance the channel, creating a parasitic load path. Always provide a defined gate reference: either a pull-down resistor to ground (for normally-on behavior when VIN is absent) or a gate-driver that actively pulls the gate. Also verify that VGS does not exceed +10 V / -20 V absolute maximum, otherwise the gate oxide can be permanently damaged - common when an inductive load's ringing couples back through the Miller capacitance.
For DPAK+ footprint, use at least 1 square inch of 2 oz copper on the drain tab to stay within thermal limits. Place a 4-7 mm wide copper trace on the source pin to handle 60 A continuous current without significant resistive heating. Minimize the gate-loop area by routing the gate trace directly over a ground plane; this reduces dv/dt-induced turn-on (Miller effect) in switching applications. Place a TVS diode (e.g., SMBJ58A) within 5 mm of drain-source to clamp load-dump transients in automotive designs.
合規資訊
AEC-Q101 (automotive discrete) qualified per Toshiba product listing and Arrow distributor page. RoHS and lead-free confirmed via Toshiba compliance documentation.
