2ED2304S06F - 650V Half-Bridge Gate Driver IC | Infineon
MPN: 2ED2304S06F ✓ Hoạt động2ED2304S06F Tóm tắt
A half-bridge gate driver is a power-management semiconductor that converts low-power logic-level PWM signals from a microcontroller or analog controller into the high-current gate-drive signals required to switch power transistors in a half-bridge topology. By integrating the high-side bootstrap diode, the 2ED2304S06F eliminates a discrete component and reduces BOM cost in offline and motor-drive designs. As part of the broader gate-driver IC family, it sits in the power-management IC hierarchy alongside low-side drivers, isolated gate drivers, and full-bridge drivers.
Key features include 650 V transient withstand voltage on the high-side floating supply, Schmitt-trigger logic inputs compatible with 3.3 V CMOS or LSTTL levels, built-in shoot-through prevention logic (interlock), and matched propagation delay between the high-side and low-side channels for low distortion switching. The output buffer is designed for minimum cross-conduction, and the device exhibits excellent noise immunity thanks to the SOI process. The integrated bootstrap diode supports high-side supply generation with an external bootstrap capacitor.
Typical applications include fan and small HVAC motor drives, appliance motor control (washing machines, refrigerators), low-power solar microinverters, and switched-mode power supply (SMPS) half-bridge stages. The DSO-8 footprint also makes it well suited to compact PCB designs where board area and BOM count are constrained.
Designers should note that proper dead-time insertion and PCB layout for the high-side bootstrap loop are essential for reliable operation. Always observe the recommended bootstrap capacitor value and high-side decoupling network from the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho 2ED2304S06F — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với 2ED2304S06F (cùng hình factor và footprint) — khác nhau ở Technology.
2ED2304S06FXUMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →2ED2104S06F
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
2ED2184S06F
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
2ED020I06-FI
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
2ED2304S06F Tỷ lệ tối đa & tính chất điện
| Product Type | Half-Bridge Gate Driver IC |
| Cấu trúc | High-side + Low-side, half-bridge |
| Technology | Infineon thin-film SOI (Silicon-On-Insulator) |
| Maximum Blocking Voltage (High-Side) | 650 V |
| Source Current (typ.) | 0.36 A |
| Sink Current (typ.) | 0.7 A |
| Integrated Bootstrap Diode | Yes |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) |
| Input Pins | LIN (low-side in), HIN (high-side in) |
| Shoot-Through Protection | Built-in interlock logic |
| Hộp | PG-DSO-8-910 (DSO-8) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 8 |
| Trạng thái RoHS | Compliant |
| Target Power Devices | IGBTs and power MOSFETs |
Cấu hình chân 2ED2304S06F
| Chân 1 | LIN — Logic input for low-side gate driver output (LO), in phase. Schmitt trigger with hysteresis and pull-down. |
| Chân 2 | HIN — Logic input for high-side gate driver output (HO), in phase. Schmitt trigger with hysteresis and pull-down. |
| Chân 3 | VCC — Low-side supply voltage (typically 12-15 V). |
| Chân 4 | GND — Ground reference for low-side driver and logic. |
| Chân 5 | LO — Low-side gate driver output to low-side power switch gate. |
| Chân 6 | VS — High-side floating supply return (connected to half-bridge switching node). |
| Chân 7 | HO — High-side gate driver output to high-side power switch gate. |
| Chân 8 | VB — High-side floating supply (bootstrap supply for HO driver stage). |
Ứng dụng tiêu biểu
2ED2304S06F phù hợp cho 6 Áp dụngs: Small HVAC Fan Motor Drive, Refrigerator Compressor Drive, Washing Machine Inverter Board, Low-Power Solar Microinverter, SMPS Half-Bridge Stage, Induction Cooktop Resonant Half-Bridge.
Small HVAC Fan Motor Drive
The 2ED2304S06F is well suited to small HVAC fan motor drives because its 650 V high-side blocking rating comfortably covers rectified 230 V AC bus voltages while its 0.36 A source and 0.7 A sink drive currents are sufficient for IGBTs in the 600 V class up to several amperes. The integrated bootstrap diode eliminates a discrete component, reducing BOM count in cost-sensitive appliance designs. The SOI process provides excellent dV/dt noise immunity needed when switching inductive motor windings, and the Schmitt-trigger hysteresis ensures reliable operation from 3.3 V microcontroller PWM outputs. Typical circuit placement is between the microcontroller and the half-bridge IGBT stage, with a 1 uF bootstrap capacitor and 100 nF VCC decoupling.
Được đề xuất
Refrigerator Compressor Drive
Refrigerator compressor drives benefit from the 2ED2304S06F's compact DSO-8 footprint and integrated bootstrap diode, which reduce PCB area in the cramped control-module enclosure. Its 0.36 A source current is enough to drive 600 V/15 A class IGBTs typical of sub-300 W inverter compressors, while the 650 V rating provides margin against compressor winding voltage spikes during back-EMF events. The SOI process noise immunity prevents false triggering in the high-noise environment near the compressor motor. Placed at the interface between the control MCU and the IGBT half-bridge, with a small ferrite bead on VCC for additional supply filtering, this driver delivers reliable long-life operation demanded by white-goods applications.
Được đề xuất
Washing Machine Inverter Board
Washing machine inverter boards use the 2ED2304S06F to drive the IGBT half-bridge that powers the universal motor in variable-frequency wash cycles. The driver's 0.7 A sink current handles the gate charge of typical 600 V/20 A IGBTs in this power class, ensuring fast turn-off and low switching loss. The integrated bootstrap diode and built-in shoot-through interlock simplify firmware by removing the need for external dead-time generation circuits. The DSO-8 package is well matched to the high-density inverter PCB layout where space is at a premium. Typical application uses an MCU-generated 16 kHz PWM, with the driver providing level translation and gate-drive buffering to the IGBT half-bridge.
Được đề xuất
Low-Power Solar Microinverter
Low-power solar microinverters (under 500 W) benefit from the 2ED2304S06F's 650 V rating which handles the boosted DC bus voltage from a 30 to 60 V panel input pushed up to 380 V DC for grid-tie inversion. The driver's SOI process provides the dV/dt immunity needed when the half-bridge switches at 50 to 100 kHz in the noisy environment of a switching power supply. The integrated bootstrap diode reduces BOM count, important for cost-competitive microinverter designs. Place the driver adjacent to the high-side and low-side MOSFETs, with a 1 to 4.7 uF bootstrap capacitor sized for the switching frequency and duty cycle.
Được đề xuất
SMPS Half-Bridge Stage
Switched-mode power supplies (SMPS) using a half-bridge topology at 110/230 V AC input rely on the 2ED2304S06F for primary-side IGBT or MOSFET gate driving. The 650 V rating handles the rectified 325 V DC bus plus ringing margin, while the 0.36 A source current drives typical 600 V/10 A MOSFETs used in sub-500 W SMPS designs. The integrated bootstrap diode simplifies the high-side supply generation - traditionally a separate high-voltage diode plus resistor network. The driver's built-in shoot-through prevention prevents cross-conduction that would otherwise damage the half-bridge. Use a 1 to 4.7 uF bootstrap capacitor and a 100 nF local VCC bypass for stable operation.
Được đề xuất
Induction Cooktop Resonant Half-Bridge
Induction cooktop resonant topologies operating at 20 to 100 kHz benefit from the 2ED2304S06F's 650 V rating and SOI noise immunity in a high-dV/dt switching environment. The 0.7 A sink current is sufficient to drive the gate charge of typical 1200 V IGBTs used in cooktop half-bridge resonant stages at these frequencies. The integrated bootstrap diode simplifies the high-side supply design, reducing component count on the cooktop PCB where thermal management is already constrained. Place the driver close to the gate resistors of the IGBT half-bridge, with the bootstrap capacitor sized for the resonant switching frequency and minimum duty cycle.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho 2ED2304S06F — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | 2ED2304S06FXUMA1 | 2ED2104S06F | 2ED2184S06F | 2ED020I06-FI |
|---|---|---|---|---|---|
| Package | PG-DSO-8-910 (DSO-8) | PG-DSO-8-910 (DSO-8) - same | PG-DSO-8-910 (DSO-8) - same | PG-DSO-8-910 (DSO-8) - same | DSO-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Blocking Voltage (High-Side) | 650 V | 650 V | 650 V | 650 V | 600 V |
| Source Current (typ.) | 0.36 A | 0.36 A | 0.18 A | 0.25 A | 0.2 A |
| Sink Current (typ.) | 0.7 A | 0.7 A | 0.36 A | 0.5 A | 0.4 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No (external required) |
| Technology | SOI | SOI | SOI | SOI | Junction-Isolated |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | 3.3 V CMOS / LSTTL | TTL/CMOS |
Bảo phân biệt quan trọng
- Integrated bootstrap diode reduces BOM (vs2ED020I06-FI)
- SOI technology provides superior noise immunity (vs2ED020I06-FI)
- Higher drive current for fast IGBT switching (vs2ED2104S06F)
Ghi chú thiết kế
Bootstrap capacitor sizing is critical for high-side driver operation. For switching frequencies around 20 kHz, use a 1 uF to 4.7 uF ceramic or electrolytic capacitor between VB and VS. The capacitor must be sized to hold VBS above the UVLO threshold (typically around 8-9 V) during the longest high-side on-time. If the high-side on-time is short (high duty cycle on low-side), a smaller bootstrap capacitor may suffice. Always include a small bootstrap diode (or use the integrated one) to charge the capacitor when VS pulls low.
PCB layout for gate-driver ICs requires careful attention to the high-side floating supply loop. Keep the bootstrap capacitor (VB to VS) as close as possible to pins 7 and 8 to minimize parasitic inductance. Place a 100 nF ceramic decoupling capacitor directly at VCC (pin 3) with the ground return to pin 4 (GND) using a short, wide trace. The HO and LO gate-drive traces should be kept short and routed away from the VS switching node to minimize capacitive coupling.
The high-side VS pin is connected to the half-bridge switching node, which has fast dV/dt transitions. To prevent noise injection into the high-side driver, place the bootstrap capacitor return (VS) directly at the source of the high-side switch. A small RC snubber (10 ohm + 1 nF) across the half-bridge can reduce dV/dt stress on both the driver and the bootstrap diode. Avoid long ground return paths - the driver GND (pin 4) should connect directly to the power ground at the low-side switch source.
Thông tin tuân thủ
RoHS compliant per Infineon product page. AEC-Q100 not applicable - this is a driver IC for power switches, not an automotive-qualified part itself. End-system automotive qualification requires the surrounding circuit to be qualified.
