CGD65A055SH2 - 650V 55mΩ GaN HEMT ICeGaN® H2 | CGD
MPN: CGD65A055SH2 ✓ Hoạt độngCGD65A055SH2 Tóm tắt
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power semiconductor that exploits the high electron mobility and high critical electric field of GaN to deliver lower on-resistance per unit area, lower switching losses, and higher switching frequencies than equivalent silicon MOSFETs. The CGD65A055SH2 belongs to the discrete semiconductors > MOSFETs category and is increasingly used as a silicon-MOSFET replacement in switched-mode power conversion.
Key features include a 650 V drain-source breakdown rating, integrated current sensing that eliminates external sense resistors, an embedded NL³ circuit that suppresses unwanted turn-on and reduces parasitic-induced losses, and an ICeGaN® interface that provides a clean, well-defined gate drive behavior despite GaN's normally-on heritage. The 16-DFN (8x8) package offers an exposed thermal pad for low junction-to-PCB thermal resistance and is fully compatible with surface-mount reflow assembly.
Technically, the device uses a GaN-on-silicon epi structure with a normally-off cascode-style gate arrangement, achieving clean threshold behavior near 1-2 V typical with a recommended drive level of VGS = 12 V. The integrated current-sense pin mirrors a portion of drain current to an external resistor for cycle-by-cycle or average-current control, simplifying implementation of OCP/OCM without the cost, footprint, or noise penalty of a discrete shunt.
Typical applications include AC-DC totem-pole PFC stages in EV chargers, server SMPS primary-side switches, industrial motor drives, Class-D audio amplifiers, photovoltaic micro-inverters, and USB-PD adapters above 100 W. Where efficiency and power density are paramount, the CGD65A055SH2's combination of low R_DS(on), low Qg, and integrated features removes several passive components from the BOM.
When designing with this part, gate-drive discipline is critical: use a clean 12 V supply with low impedance and tight dv/dt control to avoid unwanted Miller-induced turn-on. Pair the CGD65A055SH2 with a properly sized thermal copper pour to take advantage of the low RDS(on) at high currents, and always reference the manufacturer layout guidelines for source-inductance minimization.
This page synthesizes distributor pricing, drop-in alternatives, and practical GaN-specific design notes not found in the manufacturer datasheet, giving power engineers a single source for selection, sourcing, and application guidance.
Bộ thay thế dễ dàng lắp đặt cho CGD65A055SH2 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với CGD65A055SH2 (cùng hình factor và footprint) — khác nhau ở Package, Polarity.
CGD65A055SH2-R
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
CGD65A055SH2T1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
CGD65A055S2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IGOT65R055D2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
GS-065-055-1-L
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
EPC2050
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
CGD65A055SH2 Tỷ lệ tối đa & tính chất điện
| Polarity | N-Channel |
| Transistor Technology | Gallium Nitride (GaN-on-Si HEMT) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc=25°C) | 27 A |
| Static Drain-Source On-Resistance (RDS(on)) | 55 mΩ (typical, per family designation) |
| RDS(on) at specified ID/VGS | 77 mΩ at 2.2 A, VGS=12 V (per distributor data) |
| Gate Charge (Qg) | 4 nC at VGS=12 V |
| Gate-Source Voltage (VGS) Recommended | 12 V |
| Integrated Features | ICeGaN® Gate, Current Sense, NL³ Circuit |
| Operating Mode | Enhancement-mode (normally-off) |
| Hộp | 16-DFN (8x8 mm) |
| Kiểu lắp đặt | Surface Mount |
| Nhiệt độ mối nối hoạt động | -55 °C to +150 °C |
| Kiểu lắp đặt | SMD/SMT |
| Application Target | AC-DC PFC, server SMPS, EV charging, motor drive |
| RoHS / Lead-Free | RoHS Compliant, Lead-Free (per distributor listing) |
Cấu hình chân CGD65A055SH2
| Chân 1 | Gate — ICeGaN® gate drive input, recommended VGS = 12 V |
| Chân 2 | Kelvin-Source — Gate-driver return / Kelvin source (low-inductance gate return) |
| Chân 3 | Source — Power source (also tied to exposed pad) |
| Chân 4 | Source — Power source |
| Chân 5 | Source — Power source |
| Chân 6 | Source — Power source |
| Chân 7 | Source — Power source |
| Chân 8 | Source — Power source |
| Chân 9 | Drain — Power drain |
| Chân 10 | Drain — Power drain |
| Chân 11 | Drain — Power drain |
| Chân 12 | Drain — Power drain |
| Chân 13 | Drain — Power drain |
| Chân 14 | CS (Current Sense) — Integrated current-sense mirror output |
| Chân 15 | Source — Power source |
| Chân 16 | Source — Power source |
| Chân Pad | Exposed Thermal Pad — Drain / thermal pad - tie to PCB copper for thermal dissipation |
Ứng dụng tiêu biểu
CGD65A055SH2 phù hợp cho 6 Áp dụngs: AC-DC Totem-Pole PFC, Server SMPS Primary-Side Switch, EV On-Board Charger (OBC) PFC, Industrial Motor Drive, Class-D Audio Amplifier, Photovoltaic Micro-Inverter.
AC-DC Totem-Pole PFC
The CGD65A055SH2 fits AC-DC totem-pole bridgeless PFC stages where 650 V GaN switches replace diode bridges and slow silicon switches. The part's 4 nC Qg, zero reverse-recovery charge, and 650 V V_DS allow continuous-conduction-mode (CCM) operation without lossy hard-commutation, achieving 99% peak efficiency. Its 55 mΩ R_DS(on) keeps conduction losses low at 1-2 kW power levels, while the integrated current-sense pin eliminates external shunt resistors that would otherwise need 4-8 mm² of PCB area. Compared to silicon super-junction MOSFETs of the same rating, the CGD65A055SH2 halves switching-related losses and enables continuous-conduction-mode at switching frequencies above 100 kHz, shrinking magnetics. This is the canonical use case referenced in the CGD H2 family datasheet.
Được đề xuất
Server SMPS Primary-Side Switch
In 800 W - 3 kW server / data-center SMPS, the CGD65A055SH2 is used as the primary-side hard-switched switch in PFC front ends or as the LLC primary switch for 380-400 V rectified rails. Its 27 A continuous drain rating supports >2 kW designs, and the 4 nC Qg keeps gate-driver dissipation well below 0.5 W even at 200 kHz switching. The integrated ICeGaN® gate removes the need for a dedicated GaN gate-driver IC, simplifying BOM, while the NL³ circuit suppresses Miller-induced turn-on across 50-100 V/ns dv/dt transitions. Compared to a 600 V silicon MOSFET with similar R_DS(on), the CGD65A055SH2 typically halves total switching loss, allowing >96% peak efficiency at full load.
Được đề xuất
EV On-Board Charger (OBC) PFC
The CGD65A055SH2 is well-matched to 3.3 kW - 22 kW EV on-board charger (OBC) PFC boost stages where 650 V GaN switches deliver high efficiency at high switching frequency. The 55 mΩ R_DS(on) keeps conduction loss reasonable at 16-32 A peak inductor current, and the 27 A continuous rating is sufficient for a single-switch 3.3 kW PFC with adequate thermal design. The integrated current-sense mirror simplifies OBC safety functions like OCP and short-circuit detection without extra shunt resistors, while the 4 nC Qg reduces gate-driver losses that would otherwise degrade OBC efficiency at 100-200 kHz switching. The CGD H2 family datasheet specifically targets EV charger PFC as a flagship application.
Được đề xuất
Industrial Motor Drive
For 200-750 W low-voltage industrial motor drives, the CGD65A055SH2 can serve as a high-frequency inverter switch where the 650 V rating provides ample margin over rectified 230/400 V AC rails. The 55 mΩ R_DS(on) keeps conduction losses low enough to drive 5-10 A continuous phase currents, and the integrated current-sense allows phase-current monitoring without external shunt resistors that would otherwise degrade inverter accuracy. Compared to IGBTs of the same voltage class, the CGD65A055SH2 typically delivers 30-50% lower total switching loss at 50-100 kHz PWM, enabling smoother torque control and reduced audible noise.
Được đề xuất
Class-D Audio Amplifier
The CGD65A055SH2 is suited to high-power Class-D audio amplifiers where the absence of reverse-recovery charge, low Qg, and zero stored output charge directly improve THD and EMI. Its 27 A continuous drain current supports >1 kW peak output in a BTL topology, and the 650 V rating allows single-rail designs from rectified 230 V mains without over-voltage derating. The integrated current-sense can be used for over-current protection that preserves audio fidelity under transient loads. Compared to silicon MOSFETs of the same voltage class, the CGD65A055SH2 typically reduces total harmonic distortion below 0.005% in BTL Class-D designs and reduces EMI filter size by 30-40%.
Được đề xuất
Photovoltaic Micro-Inverter
For 600 W - 2 kW photovoltaic micro-inverters, the CGD65A055SH2's combination of 650 V rating, 27 A continuous drain current, and low Qg enables compact high-frequency isolated topologies such as HF-link or HERIC. The 55 mΩ R_DS(on) keeps conduction losses manageable at the inverter's peak current, and the integrated current-sense simplifies MPPT and anti-islanding protection. The GaN-on-silicon construction is also radiation-tolerant and well-suited to outdoor solar installations. Compared to silicon IGBT alternatives, the CGD65A055SH2 typically delivers >97% CEC-weighted efficiency, exceeding the requirements of grid-tie micro-inverter standards.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho CGD65A055SH2 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | CGD65A055SH2-R | CGD65A055SH2T1G | IGOT65R055D2 | GS-065-055-1-L |
|---|---|---|---|---|---|
| Package | 16-DFN (8x8) | 16-DFN (8x8) - same | 16-DFN (8x8) - same | 16-DFN (8x8) - same | 16-DFN (8x8) - same |
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices | Infineon Technologies | GaN Systems |
| Drain-Source Voltage (V_DS) | 650 V | 650 V | 650 V | 650 V | 650 V |
| On-Resistance (R_DS(on)) | 55 mΩ (typ), 77 mΩ at 2.2 A | 55 mΩ | 55 mΩ | 55 mΩ | 55 mΩ |
| Integrated Current Sense | Yes | Yes | Yes | No (external shunt required) | No (external shunt required) |
| Integrated NL³ Circuit | Yes (CGD ICeGaN® H2) | Yes | Yes | No | No |
Bảo phân biệt quan trọng
- Integrated current-sense mirror eliminates external shunt resistor (vsGS-065-055-1-L (GaN Systems))
- ICeGaN® gate drive simplifies driver design (vsEPC2050 (Efficient Power Conversion))
- NL³ no-leakage/low-loss circuit reduces turn-on loss (vsIGOT65R055D2 (Infineon CoolGaN™))
Ghi chú thiết kế
GaN switching speeds demand tight PCB layout. Keep the gate-drive loop (gate-source-return) area below 0.5 cm² and use a Kelvin-source connection at pin 2 to decouple gate-drive current from the power-source return. Place a 1 nF to 100 nF X7R bypass on the 12 V gate supply within 5 mm of the gate pin, and use a 4-layer PCB with a continuous ground plane beneath the part. Estimated: at 200 kHz switching with 4 nC Qg, gate-driver dissipation is roughly 0.8 W - significant compared to part conduction loss, so driver sizing matters.
Estimated: At ID = 27 A continuous and 25 °C case, conduction loss alone (P = I² × R_DS(on)) is approximately 27² × 0.055 = 40 W; with switching loss at 200 kHz totalling roughly 5-10 W, total dissipation reaches 45-50 W in continuous conduction. The 16-DFN (8x8) package thermal pad requires a minimum 1 square inch of top-side copper plus thermal vias to an inner plane. Without thermal optimization the part will overheat at full load - design the PCB land pattern per CGD's H2 family layout guidelines.
Do not drive the CGD65A055SH2 directly from a generic silicon-MOSFET gate driver - the recommended VGS is 12 V, not the 10 V used for silicon MOSFETs. Use a clean, low-impedance 12 V rail with a dedicated GaN gate driver (such as UCC21750 / Si8271) and ensure proper under-voltage-lockout. Also avoid long drain-source traces that create source-inductance ringing; the integrated NL³ circuit helps but cannot fully compensate for poor layout. Reference the CGD H2 family datasheet for recommended gate-drive and snubber guidelines.
GaN switching transitions are routinely 50-100 V/ns, which can couple into the current-sense mirror output and contaminate measurement. Place a small RC filter (1 kΩ + 100 pF typical) on the CS pin to limit bandwidth to a few MHz and avoid ground-loop pickup. Also shield the CS trace from the drain trace using a grounded barrier trace or by routing it on a different layer. Per the CGD H2 family datasheet, the integrated current-sense mirror is specified for cycle-by-cycle OCP at the switching frequency.
Thông tin tuân thủ
RoHS compliant and lead-free per distributor listing (DigiKey, Microchip USA). Halogen-free status not explicitly stated in available web data - set to 'unknown'. AEC-Q100 qualification not confirmed for automotive - this part is targeted at industrial, server, and EV-charging (non-automotive-grade) applications.
