IMZ120R045M1H - 1200V 45mΩ SiC Trench MOSFET TO-247-4 | Infineon
MPN: IMZ120R045M1H ✓ Hoạt độngIMZ120R045M1H Tóm tắt
A Silicon Carbide (SiC) MOSFET is a wide-bandgap power switch built on a SiC substrate instead of conventional silicon. SiC transistors offer higher breakdown voltage per micron, lower specific on-resistance, faster switching edges and operation at junction temperatures above 175 °C, sitting in the power-device hierarchy as: SiC MOSFET > MOSFET > power transistor > discrete semiconductor > semiconductor. Unlike silicon IGBTs, SiC MOSFETs are majority-carrier devices with no tail current, so turn-off losses are dramatically reduced and soft-switching behavior is intrinsic.
Key features of the IMZ120R045M1H include a benchmark gate threshold voltage of 4.5 V, a 0 V turn-off gate voltage rating, wide gate-source voltage range, fully controllable dV/dt, and a commutation-robust body diode ready for synchronous rectification. A separate sense (driver) source pin enables tight gate-loop control for the fastest possible switching. The device is qualified for industrial applications per JEDEC 47/20/22.
The trench architecture minimizes RDS(on) per unit area while keeping the body diode rugged for hard commutation. A typical RDS(on) at 25 °C of 45 mΩ, gate charge optimized for 0–18 V drive, and integrated thermal-sensing via a fourth Kelvin source pin allow designers to push switching frequency into the 50–250 kHz range for telecom rectifier, photovoltaic, or energy-storage stages. Compared with equivalent silicon IGBTs, switching losses often drop by 60–80% and the heatsink shrinks accordingly.
Typical applications include solar string inverters, industrial servo drives, on-board EV chargers and DC fast-charging stations, telecom rectifier modules, induction heating, and auxiliary converters in energy storage systems.
Designers should note that the TO-247-4 Kelvin pin is NOT exchangeable with the main source pin; proper gate-loop layout is critical for stable switching and clean EMI performance.
This page synthesizes distributor pricing, drop-in alternatives, and practical SiC design notes beyond what is shown in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IMZ120R045M1H — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IMZ120R045M1H (cùng hình factor và footprint) — khác nhau ở Body Diode, Mounting Type, Package, Qualification, Technology.
IMZ120R030M1HXKSA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IMZ120R045M1XKSA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IMW120R045M1H
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IMZ120R045M1H Tỷ lệ tối đa & tính chất điện
| Technology | CoolSiC™ 1200 V SiC Trench MOSFET |
| Drain-Source Voltage (VDS max) | 1200 V |
| On-Resistance RDS(on) at 25°C | 45 mΩ |
| Continuous Drain Current (ID at Tc=25°C) | 52 A |
| Total Power Dissipation at Tc=25°C | 228 W |
| Gate Threshold Voltage VGS(th) | 4.5 V (typical) |
| Turn-off Gate Voltage | 0 V capable |
| Nhiệt độ mối nối hoạt động | -55 °C to +175 °C |
| Hộp | TO-247-4 (PG-TO247-4-1) |
| Kiểu lắp đặt | Through-hole |
| Polarity | N-Channel |
| Driver Source Pin (Kelvin) | Yes - dedicated sense/source pin |
| Body Diode | Commutation-robust, synchronous-rectification ready |
| Qualification | JEDEC 47/20/22 (industrial) |
| Trạng thái RoHS | Compliant |
Cấu hình chân IMZ120R045M1H
| Chân 1 | Gate — Gate input for the SiC MOSFET; drive loop return is tied to pin 2 (Kelvin source) |
| Chân 2 | Kelvin Source (Sense) — Driver-return pin for the gate loop; NOT interchangeable with pin 3 |
| Chân 3 | Source (Power) — Main current return and thermal bond; NOT interchangeable with pin 2 |
| Chân 4 | Drain (Tab) — Power drain and mounting tab; electrically and thermally common |
Khu vực hoạt động an toàn - DC
Ứng dụng tiêu biểu
IMZ120R045M1H phù hợp cho 6 Áp dụngs: Solar String Inverters, On-Board EV Chargers and DC Fast Chargers, Industrial Servo Drives and Motor Control, Telecom Rectifier and DC-DC Stages, Induction Heating and Resonant Converters, Energy Storage and Bidirectional DC-DC Converters.
Solar String Inverters
The IMZ120R045M1H fits 1100–1500 V DC-link solar inverters because its 1200 V VDS rating leaves safe margin for transients on 1000 V string stacks and the 45 mΩ RDS(on) keeps conduction loss in the 50–110 W range at 30–35 A RMS. The four-lead TO-247-4 with Kelvin source pin lets the gate-driver loop stay below 5 nH, enabling dV/dt up to 50 V/ns without false trigger. Switching frequency can be pushed to 50–100 kHz, shrinking magnetics by 30% versus a comparable 1200 V IGBT stage. Compared with silicon IGBTs the SiC part also allows a smaller heatsink for the same 5–10 kW string rating.
Được đề xuất
On-Board EV Chargers and DC Fast Chargers
In a 22 kW on-board charger or 50–350 kW DC fast-charger stack, the IMZ120R045M1H drives the high-voltage totem-pole PFC and isolated DC-DC stage. Its 0 V turn-off capability and commutation-robust body diode simplify a bridgeless totem-pole PFC, eliminating the slow diode bridge. At 65 kHz switching the part cuts total hard-switching loss by 60–80% versus an equivalent IGBT, allowing coolant temperature to rise or downsizing the cold plate. The 175 °C junction rating also supports under-the-hood thermal environments where AEC-Q100-grade silicon devices would otherwise derate excessively.
Được đề xuất
Industrial Servo Drives and Motor Control
Three-phase servo drives in 400–800 V industrial automation benefit from the IMZ120R045M1H as the active side of the inverter bridge, where switching frequencies of 20–40 kHz are common. The 45 mΩ RDS(on) keeps per-arm conduction loss near 25 W at 25 A RMS, while the trench SiC body diode removes the need for an external anti-parallel diode and its associated reverse-recovery loss. Drive efficiency rises 2–4 percentage points over silicon IGBT solutions, which lets the cabinet cooling fan shrink or run slower. The device's industrial JEDEC 47/20/22 qualification also satisfies servo-drive reliability targets.
Được đề xuất
Telecom Rectifier and DC-DC Stages
Modern 3 kW telecom rectifiers use a 400 V HVDC bus and a 1000 V DC-DC conversion stage where the IMZ120R045M1H drops neatly into the primary-side switch. The 52 A continuous rating handles the 100–200 V to 48 V isolated DC-DC conversion in a single device, eliminating a parallel pair normally required for 75 A silicon solutions. The 1200 V VDS rating also covers the worst-case reflected voltage on a 540 V HVDC bus. Switching at 100–200 kHz is feasible thanks to low Eoss and Coss-driven losses, shrinking the high-frequency transformer footprint 30–50%.
Được đề xuất
Induction Heating and Resonant Converters
Induction-heating cooktops and resonant inverter power supplies use the IMZ120R045M1H on the primary side because its low Crss/Ciss ratio minimises drive loss at high dV/dt. The 0 V turn-off allows simple unipolar +18/0 V drives without negative bias supplies, and zero reverse-recovery charge makes zero-voltage-switching (ZVS) loss negligible. At 400 kHz operating frequency the part stays well within its switching-loss envelope and easily reaches 3 kW in a compact resonator. The Kelvin source pin is critical here to suppress gate-loop oscillation from the high dI/dt of the resonant tank.
Được đề xuất
Energy Storage and Bidirectional DC-DC Converters
Bidirectional battery / grid converters in 50–250 kW energy-storage systems use the IMZ120R045M1H in totem-pole or dual-active-bridge converters. The 1200 V rating covers 800 V battery packs with margin, while the commutation-robust body diode survives hard-commutated H-bridge reversals. Switching at 40–80 kHz halves inductor and transformer size compared to 20 kHz IGBT legacy designs and improves round-trip efficiency by 1–2% - material to a 100 kW battery system. The 175 °C junction limit also supports passively-cooled outdoor enclosure designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IMZ120R045M1H — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IMZ120R030M1HXKSA1 | IMZ120R045M1XKSA1 | IMW120R045M1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-247-4 (PG-TO247-4-1) | TO-247-4 - same | TO-247-4 - same | TO-247 (3/4 lead) - similar footprint |
| VDS max | 1200 V | 1200 V | 1200 V | 1200 V |
| RDS(on) at 25 °C | 45 mΩ | 30 mΩ (-33%) | 45 mΩ (identical) | 45 mΩ (identical) |
| Gate Threshold (typ) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Turn-off Gate Capability | 0 V capable | 0 V capable | 0 V capable | 0 V capable |
| Kelvin Source Pin | Yes (TO-247-4) | Yes | Yes | May be without Kelvin source pin |
Bảo phân biệt quan trọng
- Lower RDS(on) alternative within the same family and footprint (vsIMZ120R030M1HXKSA1)
- Functional drop-in with packaging identifier (vsIMZ120R045M1XKSA1)
- CoolSiC trench technology gives ~70% lower switching loss vs IGBT (vsGeneric 1200 V/45 mΩ-class silicon IGBT)
Ghi chú thiết kế
Estimated: the IMZ120R045M1H's 50 V/ns switching edge places a hard demand on the gate loop. Keep the gate-driver circuit within 5 mm of the device and tie the driver ground to pin 2 (Kelvin source) only. Power loops must flow through drain (pin 4 tab) and pin 3 source path; keep both loops on top layer and short to minimise source inductance. Per the manufacturer datasheet, pins 2 and 3 are NOT exchangeable, so any layout that shorts them together will compromise gate loop control.
The TO-247-4 package dissipates up to 228 W at Tc=25 °C, but realistic junction-temperature limits recommend staying below 150 °C rise. With TO-247-4 in still-air on a 100 cm² single-sided copper pour, a typical junction-to-ambient theta_JA is 40 °C/W, allowing ~62 W continuous power. For solar or EV-charger applications sized for 30–35 A steady-state, a fan or larger PCB-side heatsink dropping theta_JA below 0.25 °C/W is mandatory. Infineon recommends staying within 80% of max ratings for optimum lifetime.
Three common pitfalls deserve explicit attention. First, do NOT swap the IMZ120R045M1H for a 1200 V silicon IGBT on the same driver - the IGBT needs ±15 V drive, the SiC MOSFET needs +18/0 V, and the gate resistors differ by a factor of 5. Second, do NOT assume zero turn-off loss at hard-switching load because Crss/coss still contribute; use snubbers only at very high dV/dt. Third, do NOT bundle the Kelvin source pin with the power source pin on the PCB - this defeats the purpose of the dedicated source pin and will create ground-loop oscillation.
Thông tin tuân thủ
Qualified for industrial applications per JEDEC 47/20/22 according to the Infineon IMZ120R045M1 datasheet. Not AEC-Q100 qualified - for automotive-grade SiC MOSFETs choose an AEC-qualified Infineon or onsemi part.
