IMZ120R045M1H - 1200V 45mΩ SiC Trench MOSFET TO-247-4 | Infineon
MPN: IMZ120R045M1H ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $28.5 | $28.50 |
| 10 | $25.4 | $254.00 |
| 100 | $22.1 | $2,210.00 |
| 500 | $19.85 | $9,925.00 |
| 1,000 | $17.95 | $17,950.00 |
IMZ120R045M1H Overview
A Silicon Carbide (SiC) MOSFET is a wide-bandgap power switch built on a SiC substrate instead of conventional silicon. SiC transistors offer higher breakdown voltage per micron, lower specific on-resistance, faster switching edges and operation at junction temperatures above 175 °C, sitting in the power-device hierarchy as: SiC MOSFET > MOSFET > power transistor > discrete semiconductor > semiconductor. Unlike silicon IGBTs, SiC MOSFETs are majority-carrier devices with no tail current, so turn-off losses are dramatically reduced and soft-switching behavior is intrinsic.
Key features of the IMZ120R045M1H include a benchmark gate threshold voltage of 4.5 V, a 0 V turn-off gate voltage rating, wide gate-source voltage range, fully controllable dV/dt, and a commutation-robust body diode ready for synchronous rectification. A separate sense (driver) source pin enables tight gate-loop control for the fastest possible switching. The device is qualified for industrial applications per JEDEC 47/20/22.
The trench architecture minimizes RDS(on) per unit area while keeping the body diode rugged for hard commutation. A typical RDS(on) at 25 °C of 45 mΩ, gate charge optimized for 0–18 V drive, and integrated thermal-sensing via a fourth Kelvin source pin allow designers to push switching frequency into the 50–250 kHz range for telecom rectifier, photovoltaic, or energy-storage stages. Compared with equivalent silicon IGBTs, switching losses often drop by 60–80% and the heatsink shrinks accordingly.
Typical applications include solar string inverters, industrial servo drives, on-board EV chargers and DC fast-charging stations, telecom rectifier modules, induction heating, and auxiliary converters in energy storage systems.
Designers should note that the TO-247-4 Kelvin pin is NOT exchangeable with the main source pin; proper gate-loop layout is critical for stable switching and clean EMI performance.
This page synthesizes distributor pricing, drop-in alternatives, and practical SiC design notes beyond what is shown in the manufacturer datasheet.
Drop-in alternatives for IMZ120R045M1H — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IMZ120R045M1H (same form factor and footprint) — differing in Body Diode, Mounting Type, Package, Qualification, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IMZ120R030M1HXKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
IMZ120R045M1XKSA1
✅ Drop-In📋 Reference alternative (not in catalog)
IMW120R045M1H
✅ Drop-In ⚠️ Specs Unverified✓ In Stock
Contact for price
View Datasheet →IMZ120R045M1H Maximum Ratings & Electrical Characteristics
| Technology | CoolSiC™ 1200 V SiC Trench MOSFET |
| Drain-Source Voltage (VDS max) | 1200 V |
| On-Resistance RDS(on) at 25°C | 45 mΩ |
| Continuous Drain Current (ID at Tc=25°C) | 52 A |
| Total Power Dissipation at Tc=25°C | 228 W |
| Gate Threshold Voltage VGS(th) | 4.5 V (typical) |
| Turn-off Gate Voltage | 0 V capable |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | TO-247-4 (PG-TO247-4-1) |
| Mounting Type | Through-hole |
| Polarity | N-Channel |
| Driver Source Pin (Kelvin) | Yes - dedicated sense/source pin |
| Body Diode | Commutation-robust, synchronous-rectification ready |
| Qualification | JEDEC 47/20/22 (industrial) |
| RoHS Status | Compliant |
IMZ120R045M1H Pin Configuration
| Pin 1 | Gate — Gate input for the SiC MOSFET; drive loop return is tied to pin 2 (Kelvin source) |
| Pin 2 | Kelvin Source (Sense) — Driver-return pin for the gate loop; NOT interchangeable with pin 3 |
| Pin 3 | Source (Power) — Main current return and thermal bond; NOT interchangeable with pin 2 |
| Pin 4 | Drain (Tab) — Power drain and mounting tab; electrically and thermally common |
Safe Operating Area - DC
Typical Applications
IMZ120R045M1H is suitable for 6 applications: Solar String Inverters, On-Board EV Chargers and DC Fast Chargers, Industrial Servo Drives and Motor Control, Telecom Rectifier and DC-DC Stages, Induction Heating and Resonant Converters, Energy Storage and Bidirectional DC-DC Converters.
Solar String Inverters
The IMZ120R045M1H fits 1100–1500 V DC-link solar inverters because its 1200 V VDS rating leaves safe margin for transients on 1000 V string stacks and the 45 mΩ RDS(on) keeps conduction loss in the 50–110 W range at 30–35 A RMS. The four-lead TO-247-4 with Kelvin source pin lets the gate-driver loop stay below 5 nH, enabling dV/dt up to 50 V/ns without false trigger. Switching frequency can be pushed to 50–100 kHz, shrinking magnetics by 30% versus a comparable 1200 V IGBT stage. Compared with silicon IGBTs the SiC part also allows a smaller heatsink for the same 5–10 kW string rating.
Recommended
On-Board EV Chargers and DC Fast Chargers
In a 22 kW on-board charger or 50–350 kW DC fast-charger stack, the IMZ120R045M1H drives the high-voltage totem-pole PFC and isolated DC-DC stage. Its 0 V turn-off capability and commutation-robust body diode simplify a bridgeless totem-pole PFC, eliminating the slow diode bridge. At 65 kHz switching the part cuts total hard-switching loss by 60–80% versus an equivalent IGBT, allowing coolant temperature to rise or downsizing the cold plate. The 175 °C junction rating also supports under-the-hood thermal environments where AEC-Q100-grade silicon devices would otherwise derate excessively.
Recommended
Industrial Servo Drives and Motor Control
Three-phase servo drives in 400–800 V industrial automation benefit from the IMZ120R045M1H as the active side of the inverter bridge, where switching frequencies of 20–40 kHz are common. The 45 mΩ RDS(on) keeps per-arm conduction loss near 25 W at 25 A RMS, while the trench SiC body diode removes the need for an external anti-parallel diode and its associated reverse-recovery loss. Drive efficiency rises 2–4 percentage points over silicon IGBT solutions, which lets the cabinet cooling fan shrink or run slower. The device's industrial JEDEC 47/20/22 qualification also satisfies servo-drive reliability targets.
Recommended
Telecom Rectifier and DC-DC Stages
Modern 3 kW telecom rectifiers use a 400 V HVDC bus and a 1000 V DC-DC conversion stage where the IMZ120R045M1H drops neatly into the primary-side switch. The 52 A continuous rating handles the 100–200 V to 48 V isolated DC-DC conversion in a single device, eliminating a parallel pair normally required for 75 A silicon solutions. The 1200 V VDS rating also covers the worst-case reflected voltage on a 540 V HVDC bus. Switching at 100–200 kHz is feasible thanks to low Eoss and Coss-driven losses, shrinking the high-frequency transformer footprint 30–50%.
Recommended
Induction Heating and Resonant Converters
Induction-heating cooktops and resonant inverter power supplies use the IMZ120R045M1H on the primary side because its low Crss/Ciss ratio minimises drive loss at high dV/dt. The 0 V turn-off allows simple unipolar +18/0 V drives without negative bias supplies, and zero reverse-recovery charge makes zero-voltage-switching (ZVS) loss negligible. At 400 kHz operating frequency the part stays well within its switching-loss envelope and easily reaches 3 kW in a compact resonator. The Kelvin source pin is critical here to suppress gate-loop oscillation from the high dI/dt of the resonant tank.
Recommended
Energy Storage and Bidirectional DC-DC Converters
Bidirectional battery / grid converters in 50–250 kW energy-storage systems use the IMZ120R045M1H in totem-pole or dual-active-bridge converters. The 1200 V rating covers 800 V battery packs with margin, while the commutation-robust body diode survives hard-commutated H-bridge reversals. Switching at 40–80 kHz halves inductor and transformer size compared to 20 kHz IGBT legacy designs and improves round-trip efficiency by 1–2% - material to a 100 kW battery system. The 175 °C junction limit also supports passively-cooled outdoor enclosure designs.
Recommended
Recommended Products Summary
Engineering reference data for IMZ120R045M1H — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IMZ120R030M1HXKSA1 | IMZ120R045M1XKSA1 | IMW120R045M1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-247-4 (PG-TO247-4-1) | TO-247-4 - same | TO-247-4 - same | TO-247 (3/4 lead) - similar footprint |
| VDS max | 1200 V | 1200 V | 1200 V | 1200 V |
| RDS(on) at 25 °C | 45 mΩ | 30 mΩ (-33%) | 45 mΩ (identical) | 45 mΩ (identical) |
| Gate Threshold (typ) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Turn-off Gate Capability | 0 V capable | 0 V capable | 0 V capable | 0 V capable |
| Kelvin Source Pin | Yes (TO-247-4) | Yes | Yes | May be without Kelvin source pin |
Key Differentiators
- Lower RDS(on) alternative within the same family and footprint (vs IMZ120R030M1HXKSA1)
- Functional drop-in with packaging identifier (vs IMZ120R045M1XKSA1)
- CoolSiC trench technology gives ~70% lower switching loss vs IGBT (vs Generic 1200 V/45 mΩ-class silicon IGBT)
Design Notes
Estimated: the IMZ120R045M1H's 50 V/ns switching edge places a hard demand on the gate loop. Keep the gate-driver circuit within 5 mm of the device and tie the driver ground to pin 2 (Kelvin source) only. Power loops must flow through drain (pin 4 tab) and pin 3 source path; keep both loops on top layer and short to minimise source inductance. Per the manufacturer datasheet, pins 2 and 3 are NOT exchangeable, so any layout that shorts them together will compromise gate loop control.
The TO-247-4 package dissipates up to 228 W at Tc=25 °C, but realistic junction-temperature limits recommend staying below 150 °C rise. With TO-247-4 in still-air on a 100 cm² single-sided copper pour, a typical junction-to-ambient theta_JA is 40 °C/W, allowing ~62 W continuous power. For solar or EV-charger applications sized for 30–35 A steady-state, a fan or larger PCB-side heatsink dropping theta_JA below 0.25 °C/W is mandatory. Infineon recommends staying within 80% of max ratings for optimum lifetime.
Three common pitfalls deserve explicit attention. First, do NOT swap the IMZ120R045M1H for a 1200 V silicon IGBT on the same driver - the IGBT needs ±15 V drive, the SiC MOSFET needs +18/0 V, and the gate resistors differ by a factor of 5. Second, do NOT assume zero turn-off loss at hard-switching load because Crss/coss still contribute; use snubbers only at very high dV/dt. Third, do NOT bundle the Kelvin source pin with the power source pin on the PCB - this defeats the purpose of the dedicated source pin and will create ground-loop oscillation.
Compliance Information
Qualified for industrial applications per JEDEC 47/20/22 according to the Infineon IMZ120R045M1 datasheet. Not AEC-Q100 qualified - for automotive-grade SiC MOSFETs choose an AEC-qualified Infineon or onsemi part.
