IPD60R360P7ATMA1 - 600V CoolMOS P7 MOSFET, 360mOhm, 9A | Infineon
MPN: IPD60R360P7ATMA1 ✓ Hoạt độngIPD60R360P7ATMA1 Tóm tắt
What is a CoolMOS MOSFET? A CoolMOS is a superjunction (SJ) high-voltage power MOSFET pioneered by Infineon. It belongs to the MOSFET family of power transistors, which sit in the broader hierarchy of discrete semiconductors → power switches → power MOSFETs → superjunction MOSFETs. Superjunction devices replace the conventional planar DMOS drift region with alternating P/N columns, dramatically reducing R<sub>DS(on)</sub>×A figure of merit and enabling higher switching frequencies with lower conduction and switching losses than planar MOSFETs of the same voltage class.
Key features of the IPD60R360P7ATMA1 include 600 V drain-source breakdown voltage, a low typical gate charge Q<sub>g</sub> suited for hard-switched topologies, integrated ESD protection rated >2 kV HBM, and very low ringing tendency that simplifies EMI filter design. It is the industrial-grade successor to the CoolMOS P6 series, targeting high-efficiency SMPS, TV adapters, LED lighting drivers and auxiliary power supplies.
The P7 generation uses Infineon's seventh-generation superjunction platform, combining fast switching SJ performance with excellent ease-of-use characteristics such as a wide safe operating area, improved body-diode robustness, and outstanding light-load efficiency from a low stored output charge Q<sub>oss</sub>. Compared to P6, P7 offers better R<sub>DS(on)</sub>/package efficiency enabled by an R<sub>DS(on)</sub>×A figure of merit below 1 Ω·mm².
Typical applications include switch-mode power supplies (SMPS), TV and monitor standby supplies, telecom auxiliary converters, LED lighting drivers, e-bike and power-tool chargers, and industrial power supplies. The wide 600 V rating provides ample margin for universal-mains (85-265 V<sub>AC</sub>) PFC and flyback front-end stages.
When designing with this device, place the gate-drive resistor close to the gate pin to damp parasitic ringing, and provide adequate heatsinking at the DPAK tab - the 41 W T<sub>C</sub> rating is only achievable with the tab soldered to a sufficient copper pour. Leave at least 4 mm creepage between the drain pad and low-voltage traces because of the high V<sub>DS</sub>.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers accelerate selection and second-source validation.
Bộ thay thế dễ dàng lắp đặt cho IPD60R360P7ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD60R360P7ATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Series, Operating Junction Temperature, Package, Mounting Type.
IPD60R360P7S
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPP60R360P7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD65R380E6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPW60R037P7XKSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD60R360P7ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (V_DS) | 600 V |
| Gate-Source Voltage (V_GS) | ±20 V (max) |
| Continuous Drain Current (I_D) at T_C=25°C | 9 A |
| R_DS(on) max @ V_GS=10V | 360 mΩ |
| Total Power Dissipation (P_tot) at T_C=25°C | 41 W |
| Nhiệt độ mối nối hoạt động | -55°C to +150°C |
| Storage Temperature | -55°C to +150°C |
| Hộp / Vỏ | PG-TO252-3 (DPAK), surface mount |
| Kiểu lắp đặt | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) typ | 3.5 V (typ) |
| ESD Protection (HBM) | >2 kV (per datasheet) |
| Cấp MSL | 1 (per JEDEC J-STD20) |
| RoHS Compliance | Compliant |
| Qualification | Industrial grade per JEDEC (J-STD20, JESD22) |
Cấu hình chân IPD60R360P7ATMA1
| Chân 1 | Gate — Gate control input; drive with 10 V typical V_GS |
| Chân 2 | Drain — Drain connection; internally tied to the metal tab |
| Chân 3 | Source — Source connection; reference for gate drive |
| Chân Tab | Drain (Tab) — Metal tab electrically connected to pin 2 (Drain); solder to PCB copper pour for heatsinking |
Khu vực hoạt động an toàn (DC), T_C = 25 °C
Ứng dụng tiêu biểu
IPD60R360P7ATMA1 phù hợp cho 6 Áp dụngs: Quasi-Resonant Flyback SMPS, LED Lighting Drivers, TV Standby Power Supply, Industrial Auxiliary Power Supplies, Power Tool Chargers (e-Bike / Cordless), Telecom Auxiliary / Housekeeping Supplies.
Quasi-Resonant Flyback SMPS
The IPD60R360P7ATMA1 is well suited for quasi-resonant flyback converters in 15-40 W adapters and auxiliary supplies. Its 600 V V_DS rating covers 265 V_AC rectified input plus transformer leakage spikes, while the 360 mΩ max R_DS(on) keeps conduction loss low at full load. CoolMOS P7's reduced Q_oss improves valley-switching efficiency, helping designers hit ENERGY STAR and EU CoC standby targets. Compared to planar MOSFETs, the part's superjunction structure allows switching frequencies up to 130 kHz in QR mode without exceeding the 41 W package dissipation budget, reducing transformer size by 20-30%.
Được đề xuất
LED Lighting Drivers
In isolated and non-isolated LED drivers for residential and commercial luminaires, the IPD60R360P7ATMA1 serves as the primary-side switch in single-stage PFC flyback or two-stage PFC+flyback topologies. The 600 V rating handles universal mains input, and the DPAK package enables compact driver housings compatible with Zhaga Book mounting standards. The CoolMOS P7 platform's low ringing tendency reduces EMI filter cost - typically saving 2-3 components versus older planar MOSFETs - and the >2 kV HBM ESD rating improves assembly-line yield for high-volume SMT production.
Được đề xuất
TV Standby Power Supply
The IPD60R360P7ATMA1 is widely used as the standby/main switch in TV and monitor SMPS designs where universal-mains operation and low standby power are mandatory. Its 360 mΩ R_DS(on) at 10 V gate drive enables 5 V / 1-2 A standby rails with <75 mW no-load consumption, satisfying EU ErP and California Title 20 standby requirements. Compared to the older CoolMOS P6 family, P7's improved body-diode robustness and integrated ESD reduce field-failure rates in the high-humidity TV chassis environment, and the DPAK tab provides efficient thermal dissipation with only 0.5 sq-in copper pour.
Được đề xuất
Industrial Auxiliary Power Supplies
In industrial PLCs, motor-control auxiliary rails, and 24 V bus-powered sensor supplies, the IPD60R360P7ATMA1 serves as the primary switch in isolated flyback converters feeding 5 V, 12 V, and 24 V rails. Its 600 V V_DS handles 480 V three-phase rectified input with 20% over-voltage margin, and the >2 kV HBM ESD rating combined with JEDEC industrial qualification (J-STD20, JESD22) ensures reliable operation in electrically noisy factory environments. The DPAK package simplifies SMT assembly for volume manufacturing and supports AOI/X-ray inspection of solder joints on the thermal tab.
Được đề xuất
Power Tool Chargers (e-Bike / Cordless)
For e-bike battery chargers, cordless tool charging docks, and similar Li-ion charging applications, the IPD60R360P7ATMA1 forms the primary-side flyback or PFC switch. Its 600 V rating accepts worldwide mains voltage, and the superjunction technology enables higher switching frequency that shrinks the high-frequency transformer by 25% versus equivalent planar MOSFET solutions - critical for the compact form factors consumers demand. CoolMOS P7's low gate charge Q_g reduces driver losses, and the DPAK outline supports reflow soldering onto automated charger PCBs.
Được đề xuất
Telecom Auxiliary / Housekeeping Supplies
In telecom rectifier modules and 48 V bus-powered auxiliary supplies, the IPD60R360P7ATMA1 provides the primary-side switch for 5-15 W isolated housekeeping converters that derive auxiliary rails from the 380 V DC bus. Its 600 V rating tolerates 380 V input plus transient spikes, and the superjunction design ensures >88% efficiency at typical 25-50% load points where housekeeping supplies spend most of their operating life. CoolMOS P7's integrated body-diode ruggedness supports CCM operation during overload conditions, and the DPAK's compact footprint saves PCB real estate in space-constrained rectifier cards.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD60R360P7ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD60R360P7S | IPP60R360P7 | IPD65R380E6ATMA1 |
|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | TO-220 - different outline | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V_DS) | 600 V | 600 V | 600 V | 650 V |
| R_DS(on) max @ V_GS=10V | 360 mΩ | 360 mΩ | 360 mΩ | 380 mΩ |
| Technology | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS P7 (Superjunction) | CoolMOS E6 (Superjunction) |
Bảo phân biệt quan trọng
- CoolMOS P7 superjunction with >2 kV HBM ESD (vsOlder CoolMOS P6 series)
- Lower R_DS(on) × A figure of merit (vsPlanar MOSFET at 600 V)
- Industrial-grade qualification per JEDEC (vsCommercial-grade alternatives)
Ghi chú thiết kế
Estimated: At continuous 9 A drain current in the PG-TO252-3 (DPAK) package, the silicon die can dissipate up to 41 W when T_C = 25 °C and the tab is soldered to at least 1 sq-in of 2 oz copper. Above ~2 W continuous dissipation, designers must derate using the θ_JA thermal resistance curve from the datasheet. For high-current / high-dissipation designs, upgrading to the TO-220 (IPP60R360P7) variant with a clip-mount heatsink is recommended, as it nearly doubles the practical dissipation headroom for the same silicon die.
Because the DPAK tab is the drain, leave at least 4 mm of creepage between the drain copper pour and any low-voltage or secondary-side traces to meet IEC 60950 / IEC 62368 safety requirements for primary-secondary isolation in flyback designs. Use a gate-drive resistor of 10-47 Ω placed within 5 mm of the gate pin to damp parasitic ringing from the source-lead inductance. The Kelvin connection to the source-sense pin (if present on the chosen footprint) should be used for very high di/dt switching, but for the standard TO-252-3 outline only pins 1/2/3 are available.
Do not exceed the ±20 V gate-source voltage rating - even brief transients above this will permanently damage the thin gate oxide. Add a 10 kΩ pull-down on the gate to keep the MOSFET off during controller power-up, and add a 10 V Zener from gate to source to clamp any coupled dv/dt-induced ringing. Also note that the CoolMOS P7 body diode has finite reverse-recovery charge Q_rr; if used in a CCM PFC or hard-switched bridge, verify Q_rr within the datasheet's safe-commutation boundary to avoid device failure at turn-on.
CoolMOS P7's superjunction architecture exhibits very low ringing tendency compared to older P6 devices, simplifying EMI filter design. For quasi-resonant flyback at 65 kHz switching frequency, a common-mode choke of 10-22 mH plus 470 pF Y-cap typically achieves EN 55022 Class B with no extra damping network. If the design shows >6 dB margin shortfall above 30 MHz, check the source-lead inductance - shortening the source return path by 2-3 mm often resolves high-frequency EMI noise without changing the filter.
Thông tin tuân thủ
RoHS and REACH compliance per Infineon product page. Qualified per JEDEC J-STD20 and JESD22 industrial-grade standards, but not AEC-Q100 qualified for automotive - choose an automotive-grade CoolMOS variant if AEC-Q100 is required.
