MAX15024AATB/V+T - 8A Single Low-Side MOSFET Driver | Analog Devices
MPN: MAX15024AATB/V+T ✓ Hoạt độngMAX15024AATB/V+T Tóm tắt
A gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, FPGA, or analog controller) and the gate of a discrete power switch (typically a MOSFET or IGBT). Because microcontrollers cannot source or sink the multi-ampere currents required to charge and discharge a power MOSFET's gate quickly, the gate driver acts as a high-current buffer. Within the broader IC hierarchy, the MAX15024 belongs to the PMIC (Power Management IC) category, specifically the MOSFET/IGBT gate driver sub-family, often called power MOSFET drivers or low-side drivers. Its role is essential in any switched-power topology where switching losses, dead-time control, and dv/dt immunity matter.
Key features include 4.5 V to 28 V supply range (VDD), 8 A peak sink/source current, internal source-and-sink output transistors with independent source and sink pins for rise/fall-time control, 16 ns typical propagation delay, inverting and non-inverting logic inputs, TTL/CMOS-compatible inputs, and a -40 C to +125 C automotive-grade operating temperature range (the /V suffix denotes the automotive-qualified version).
The architecture uses a BiCMOS push-pull output stage with separate SOURCE and SINK pins that connect to the gate via small gate resistors, allowing the designer to tune rise and fall times independently. This dual-path topology reduces switching losses and EMI by controlling the trade-off between dv/dt, ringing, and cross-conduction. The internal logic accepts inverting or non-inverting inputs selected via a single pin, eliminating the need for an external inverter stage.
Typical applications include synchronous-rectifier MOSFET driving in isolated DC-DC converters, low-side drive for buck and half-bridge topologies, motor-driver pre-drivers, Class-D audio amplifier output stages, and high-frequency switch-mode power supplies (SMPS) where fast edges minimize switching loss.
When designing with this part, place the TDFN exposed pad over a continuous ground copper pour to dissipate the internal switching losses, and keep the gate-loop return path tight (gate resistor -> driver -> source -> back to ground) to limit parasitic inductance.
This page synthesizes distributor pricing as of 2026-10-09, drop-in automotive-grade alternatives, package-aware comparison data, and practical PCB-layout design notes not collected in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho MAX15024AATB/V+T — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MAX15024AATB/V+T (cùng hình factor và footprint) — khác nhau ở Input Logic Compatibility, Package.
MAX15024AATB+T
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MAX15024BATB+T
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MAX15024CATB+T
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MAX15024DATB+T
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MAX15024AATB/V+T
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MAX15024AATB/V+T Tỷ lệ tối đa & tính chất điện
| Chức năng | Low-Side Gate Driver |
| Driver Configuration | Single, Inverting and Non-Inverting |
| Number of Drivers | 1 |
| Supply Voltage (VDD) | 4.5 V to 28 V |
| Peak Output Current (Sink/Source) | 8 A |
| Propagation Delay (Typ.) | 16 ns |
| Maximum Switching Frequency | 1 MHz |
| Input Logic Compatibility | TTL / CMOS |
| Rise/Fall Time Control | Independent SOURCE and SINK output pins |
| Khoảng nhiệt độ hoạt động | -40 C to +125 C |
| Hộp | 10-TDFN (3x3 mm) Exposed Pad |
| Kiểu lắp đặt | Surface Mount |
| Automotive Qualified (/V) | Yes |
| Trạng thái RoHS | Compliant |
Cấu hình chân MAX15024AATB/V+T
| Chân 1 | IN+ — Non-inverting TTL/CMOS input |
| Chân 2 | IN- — Inverting TTL/CMOS input / polarity select |
| Chân 3 | GND — Ground |
| Chân 4 | SOURCE — Source output (pull-up to gate) - connect via gate resistor |
| Chân 5 | SINK — Sink output (pull-down to gate) - connect via gate resistor |
| Chân 6 | VDD — Supply voltage (4.5 V to 28 V) |
| Chân 7 | NC — Not connected (per datasheet) |
| Chân 8 | NC — Not connected (per datasheet) |
| Chân 9 | NC — Not connected (per datasheet) |
| Chân 10 | NC — Not connected (per datasheet) |
Ứng dụng tiêu biểu
MAX15024AATB/V+T phù hợp cho 6 Áp dụngs: Synchronous Rectifier for Isolated DC-DC Converters, Low-Side Drive in Buck and Half-Bridge SMPS, Class-D Audio Amplifier Output Stage, Motor Driver Pre-Driver for BLDC and Stepper Stages, Power-Supply Module Primary-Side Drive, Automotive 12 V/24 V Load Switch Drivers.
Synchronous Rectifier for Isolated DC-DC Converters
The MAX15024AATB/V+T drives the secondary-side synchronous-rectifier MOSFETs in isolated flyback, forward, and half-bridge DC-DC converters where the 8 A peak current and 16 ns propagation delay let designers eliminate body-diode conduction without oversizing the gate resistor. The independent SOURCE and SINK pins connect to two small external gate resistors, letting the engineer trade off dv/dt (for EMI compliance) against switching loss (for efficiency) on a per-channel basis. Compared to a discrete push-pull BJT driver the MAX15024 saves PCB area and removes cross-conduction risk via tightly matched internal timing. Typical input-to-output propagation skew is below 5 ns across temperature, ensuring symmetric dead-time in a pair of synchronous FETs.
Được đề xuất
Low-Side Drive in Buck and Half-Bridge SMPS
In buck and half-bridge switch-mode power supplies the MAX15024AATB/V+T drives the low-side MOSFET directly from a PWM controller's logic-level output, delivering the multi-ampere gate charge current that microcontrollers and small PWM controllers cannot supply. The 4.5 V to 28 V supply range covers 5 V, 12 V, and 24 V bus rails, allowing the same driver to be reused across product variants. The 1 MHz switching capability enables high-frequency designs where smaller magnetics reduce total BOM. Independent rise/fall-time control via SOURCE/SINK pins reduces ringing on the switching node, addressing EMI compliance for CISPR 22 / FCC Part 15 emission limits.
Được đề xuất
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers require MOSFET gate drivers with very short propagation delay so dead-time stays below audible thresholds (< 20 ns) and crossover distortion is minimized. The MAX15024AATB/V+T's 16 ns propagation delay easily meets this requirement while its 8 A peak current drives typical audio-grade MOSFETs (such as IRF6645 or BSC0901NS) at switching frequencies up to 500 kHz. The independent SOURCE/SINK pins let the audio designer soften the gate edge to manage EMI without sacrificing audio-band THD performance. The exposed-pad TDFN package provides excellent thermal dissipation for the continuous switching losses typical of audio duty cycles.
Được đề xuất
Motor Driver Pre-Driver for BLDC and Stepper Stages
Brushless DC (BLDC) and stepper motor drives use the MAX15024AATB/V+T as a pre-driver for the low-side FETs of a three-phase inverter, providing the high peak gate current needed for fast switching at 20 kHz to 100 kHz PWM frequencies. The automotive-grade /V variant is qualified for under-the-hood motor control in electric-vehicle auxiliaries such as pumps and fans. The 8 A peak current supports direct drive of large FETs without an additional booster stage, reducing BOM count and PCB area. The -40 C to +125 C operating range handles automotive under-hood thermal extremes without derating.
Được đề xuất
Power-Supply Module Primary-Side Drive
Brick-style power modules and intermediate bus converters use the MAX15024AATB/V+T as a primary-side low-side driver for the main power MOSFET, where the 28 V VDD rating easily accepts 12 V and 24 V input rails. The TTL/CMOS-compatible inputs interface directly with primary-side PWM controllers, eliminating the need for level-shifting circuitry. The exposed pad provides a low thermal-impedance path to the module's copper heat-spreader, enabling continuous operation at full 8 A peak drive without thermal shutdown. Designers can run the part at the full 1 MHz rating to shrink magnetics in compact brick designs.
Được đề xuất
Automotive 12 V/24 V Load Switch Drivers
The /V suffix on the MAX15024AATB/V+T denotes AEC-Q100 automotive qualification, making this part the preferred choice for driving high-side or low-side load-switch MOSFETs in 12 V and 24 V automotive body-electronics modules. The 8 A peak current handles large FETs used for switched battery feeds, LED drivers, and accessory relays. The wide 4.5 V to 28 V VDD tolerance survives cold-crank transients and load-dump events when paired with a TVS clamp. Independent SOURCE/SINK pin control is useful for EMI compliance in noise-sensitive automotive audio and infotainment rails.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MAX15024AATB/V+T — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MAX15024AATB+T | MAX15024BATB+T | MAX15024CATB+T | MAX15024DATB+T |
|---|---|---|---|---|---|
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Package | 10-TDFN (3x3 mm) | 10-TDFN (3x3 mm) - same | 10-TDFN (3x3 mm) - same | 10-TDFN (3x3 mm) - same | 10-TDFN (3x3 mm) - same |
| Peak Output Current | 8 A | 8 A | 8 A | 8 A | 8 A |
| Supply Voltage (VDD) | 4.5 V to 28 V | 4.5 V to 28 V | 4.5 V to 28 V | 4.5 V to 28 V | 4.5 V to 28 V |
| Maximum Switching Frequency | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz |
| Automotive Grade (/V) | Yes (AEC-Q100) | No | No | No | No |
| Operating Temperature Range | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
Bảo phân biệt quan trọng
- Independent SOURCE/SINK pins for per-edge tuning (vsMAX15027)
- Automotive-grade screening in same footprint (vsMAX15024AATB+T)
- 8 A peak current in compact 10-TDFN (vsMAX15025 (dual channel))
Ghi chú thiết kế
Estimated: at continuous 200 kHz switching into a 50 nC gate charge (Qg), the MAX15024 dissipates roughly Pdrv = Qg * VDD * fsw = 50 nC * 12 V * 200 kHz = 0.12 W, plus dynamic shoot-through losses. The 10-TDFN (3x3 mm) exposed pad has theta_JA in the 40 C/W range on a standard JEDEC 4-layer board. Solder the exposed pad to a continuous ground copper pour of at least 25 mm^2 to keep the junction below 125 C at 25 C ambient. Industrial designs seldom need extra heatsinking, but high-duty-cycle automotive applications should verify with a thermocouple measurement.
Keep the gate-loop return path tight: place the gate resistor within 5 mm of the SOURCE/SINK pins, route the return directly to the driver's GND pin, and avoid sharing the gate-return path with the power ground current of the MOSFET. Use a star-ground topology tying driver GND, source-sense GND, and VDD bypass GND at a single point. Place a 1 uF X7R ceramic bypass capacitor within 2 mm of the VDD pin, paralleled by a 0.1 uF NP0/C0G capacitor for high-frequency decoupling.
Do not exceed 28 V on VDD - automotive load-dump transients above 32 V will damage the part; add a TVS clamp (e.g. SMAJ28CA) for 12 V automotive buses. Do not leave the SOURCE/SINK pins floating - the datasheet requires external gate resistors on both pins to limit peak current and control edge rates. Do not drive the inputs above VDD or below GND; if the upstream controller runs at a different voltage, use a level shifter. Finally, respect the 16 ns propagation delay when computing dead-time in synchronous-rectifier loops to avoid shoot-through.
Thông tin tuân thủ
The /V suffix denotes AEC-Q100 automotive qualification. RoHS and REACH compliance confirmed via distributor listings. The standard MAX15024AATB+T variant is not AEC-Q100 qualified - choose the /V variant for automotive designs.
