MD7IC2755GNR1 - 2.5-2.7GHz 10W WiMAX RF LDMOS PA | NXP
MPN: MD7IC2755GNR1 ✓ Hoạt độngMD7IC2755GNR1 Tóm tắt
An RF LDMOS integrated power amplifier (IPA) is a multi-stage solid-state transistor IC that combines a final-stage LDMOS FET with interstage matching and bias circuitry on a single die. The LDMOS family sits within the hierarchy lateral-DMOS transistor -> power MOSFET -> discrete semiconductor -> wide-bandgap and silicon RF power device. IPAs are widely used in macro-cell base stations, small-cell radios, and broadband wireless infrastructure where linearity, gain flatness, and ruggedness into mismatched loads matter more than raw figure of merit.
Key features include high gain (25 dB typical), 100% PAR-tested output power capability, symmetrical Doherty production testing, and stability into a 10:1 VSWR. The N suffix indicates the on-chip matching variant that targets 2.5-2.7 GHz cellular bands; the G-version (MD7IC2755GNR1) is the tape-and-reel packaging version. Internal ESD protection and integrated thermal management are also provided to simplify board-level design.
Architecturally, the device is a two-stage cascade with on-chip input and interstage matching, characteristic of NXP's HV7IC family. The LDMOS process provides high breakdown voltage (rated to 65 V transient per datasheet) and excellent thermal conductivity. Designers benefit from reduced BOM count compared to discrete amplifier chains, while the all-spur metric (-60 dBc at 100 mW to 10 W CW) keeps spectral regrowth within typical cellular mask requirements.
Typical applications include WiMAX base-station power amplifiers, LTE/3G micro-cell transmitters operating in Band 38/40, broadband wireless access repeaters, and general 2.5-2.7 GHz industrial RF transmitters. The broadband match also makes it a fit for software-defined radio platforms that retune within the 2.5-2.7 GHz envelope.
Design considerations include providing a robust 28 V low-noise supply, ensuring adequate PCB thermal copper to dissipate up to 10 W of continuous RF power, and observing the moisture sensitivity level (MSL) handling guidelines for the TO-270-14 plastic overmold package. A proper sequence of gate bias and drain voltage is recommended during turn-on and turn-off to prevent parametric drift.
This page synthesizes distributor pricing, drop-in package-equivalent alternatives, and practical PA design notes that are not aggregated on a single manufacturer or distributor page.
Bộ thay thế dễ dàng lắp đặt cho MD7IC2755GNR1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MD7IC2755GNR1 (cùng hình factor và footprint) — khác nhau ở Package / Case, Supply Voltage (Vdd), Mounting Type, Frequency Range, Operating Mode.
MD7IC2755NR1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MD7IC2250NR1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MD7IC2050NR1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MD7IC2755GNR1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MD7IC2755GNR1 |
| Description | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 2500 MHz to 2700 MHz |
| RF Type | WiMAX / Cellular base-station |
| Supply Voltage (Vdd) | 28 V (range 26 V to 32 V) |
| Supply Current (Idq) | 275 mA |
| Gain | 25 dB |
| Average Output Power | 10 W (CW, P1dB typical 30 W) |
| Drain Voltage Rating | 65 V transient |
| Hộp / Vỏ | TO-270-14 Variant, Gull Wing |
| Kiểu lắp đặt | Surface Mount |
| Operating Mode | Doherty (production-tested symmetrical) |
| VSWR Ruggedness | 10:1 stable |
| Spurious (all spurs) | Below -60 dBc from 100 mW to 10 W CW |
| Packaging | Tape & Reel |
Hướng dẫn cấu hình chân MD7IC2755GNR1 to-270-14 variant, gull wing
Cấu hình chân cho MD7IC2755GNR1 (to-270-14 variant, gull wing gói). Thành phần số hiệu này có chân đầu vào, đầu ra và nguồn cung cấp. Tham khảo tài liệu thông số kỹ thuật của nhà sản xuất để biết cấu hình chân bù, bù trừ và chân kích hoạt. Hoàn hảo cho điều kiện tín hiệu và mạch khuếch đại.
Không có dữ liệu chân cụ thể sẵn có cho MD7IC2755GNR1.
Tham khảo: tài liệu kỹ thuật cho cấu hình chân đầy đủ.
Ứng dụng tiêu biểu
MD7IC2755GNR1 phù hợp cho 7 Áp dụngs: WiMAX 2.5-2.7 GHz Base-Station PA, LTE Band 38/40 Small-Cell Transmitter, Broadband Wireless Access (BWA) Repeater, Industrial 2.5-2.7 GHz RF Transmitter, Software-Defined Radio (SDR) Front-End PA, Cellular Repeater / Signal Booster, Multi-Carrier GSM/EDGE Base Station.
WiMAX 2.5-2.7 GHz Base-Station PA
The MD7IC2755GNR1 was designed for 2.5-2.7 GHz WiMAX base-station transmitters, with on-chip matching eliminating the need for external matching components in this band. Its 10 W average / 30 W P1dB CW output capability delivers sufficient link-budget margin for micro-cell deployments, while the 25 dB typical gain means a single driver stage is usually sufficient upstream of the final PA. The 100% PAR-tested production units guarantee clean OFDM signal integrity even with high peak-to-average ratios characteristic of WiMAX waveforms. Spurious emissions remain below -60 dBc from 100 mW up to 10 W CW, satisfying typical spectral mask requirements. Designers should pair this part with an NXP reference evaluation board for fastest design-in and use the documented Doherty bias configuration for best efficiency at backed-off output levels.
Được đề xuất
LTE Band 38/40 Small-Cell Transmitter
The 2500-2690 MHz matching band of the MD7IC2755GNR1 covers LTE TDD Band 38 (2570-2620 MHz) and Band 40 (2300-2400 MHz, partial coverage) small-cell deployments. Its 28 V operation is consistent with typical macro/small-cell supply rails, while the 275 mA quiescent current allows single-supply bias designs. Doherty production testing means the device can be run efficiently at 6-10 dB back-off where LTE signals statistically average power, giving the best combination of linearity and efficiency. The TO-270-14 Gull Wing package exposes a substantial thermal pad for PCB copper heatsinking, important for sustained downlink transmissions in dense urban small-cell grids. For multi-band small-cells, designers often stack this part with the 900 MHz MW7IC930NR1 to cover lower LTE bands on the same PCB form factor.
Được đề xuất
Broadband Wireless Access (BWA) Repeater
The broadband 2.5-2.7 GHz matching band of the MD7IC2755GNR1 suits fixed-wireless-access and outdoor CPE repeater designs where the device serves as either the downlink PA or the uplink LNA driver. Its 10 W average power supports medium-range outdoor links, and the 10:1 VSWR ruggedness protects the device against antenna mismatch when installers deploy in varying field conditions. A symmetrical Doherty topology can improve talk-time efficiency in battery-backed CPE designs. The multi-stage integrated design replaces what would otherwise be a discrete LDMOS plus interstage matching network, saving PCB area and reducing bill of materials. For RF repeaters targeting simultaneous multiple-input multiple-output (MIMO) operation, multiple parallel MD7IC2755GNR1 devices drive independent antenna paths.
Được đề xuất
Industrial 2.5-2.7 GHz RF Transmitter
The MD7IC2755GNR1 is a viable option for industrial RF transmitters in the 2.5-2.7 GHz band, such as wireless sensor network backhaul nodes, RFID interrogators in ISM-adjacent bands, and proprietary industrial telemetry hubs. The high 25 dB gain lets a single upstream DAC or synthesizer drive the PA directly, and the ruggedness into mismatched loads protects against fluctuating VSWR encountered in metal-rich factory environments. Internal ESD protection on the RF input further improves field reliability versus discrete transistor designs. The thermal pad enables mounting on a heavy copper backplane common in industrial enclosures. Designers should ensure the local oscillator phase noise is compatible with the modulated bandwidth and signal-integrity requirements of the application.
Được đề xuất
Software-Defined Radio (SDR) Front-End PA
The MD7IC2755GNR1 can serve as a transmit front-end PA in software-defined-radio platforms that retune across the 2.5-2.7 GHz cellular and ISM-adjacent bands. Although the on-chip matching is band-specific, the multi-stage architecture and high gain reduce host FPGA/DAC drive requirements common in SDR transmit chains. Designers may pair it with broadband pre-driver stages and digital pre-distortion (DPD) loops to maintain linearity across modulation bandwidths. Evaluation-board de-embedding data is available from NXP to support S-parameter simulation. The TO-270-14 footprint is well-documented in standard mechanical libraries, simplifying PCB library creation. For truly broadband SDRs spanning 700 MHz to 2.7 GHz, complement this part with the MW7IC930NR1 and discrete wideband stages.
Được đề xuất
Cellular Repeater / Signal Booster
Indoor and outdoor cellular signal boosters operating in the 2.5-2.7 GHz range (such as Band 38 / Band 40 boosters) can use the MD7IC2755GNR1 as their downlink amplification element. The 10 W average power and 25 dB gain means a single device covers most residential and small-commercial booster gain budgets, while the high VSWR tolerance protects against the variable antenna impedances seen in field installations. The integrated approach reduces PCB real estate, helping shrink the booster enclosure. The die's broadband stable design helps avoid oscillations in booster chains with high circulator-isolation variation. Coordinate the upstream SAW/ceramic bandpass filters to ensure out-of-band rejection is sufficient before the MD7IC2755GNR1 input.
Được đề xuất
Multi-Carrier GSM/EDGE Base Station
Although primarily targeted at OFDM/WiMAX, the MD7IC2755GNR1's wide operating bandwidth and high linearity make it suitable for legacy multi-carrier GSM/EDGE base-station transmit chains operating in the 2.5-2.7 GHz range. The device's 30 W CW P1dB headroom supports multi-carrier combining without excessive IMD3 regrowth, and the Doherty production-tested characterization simplifies deployment of high-efficiency amplifiers. The 28 V supply is compatible with typical macro-station -48 V backplane conversion rails. Back-off operation at 6-10 dB is essential for multi-carrier linearity; the device's data sheet provides clear back-off efficiency curves. Designers should also evaluate the MW7IC930NR1 for any 900 MHz GSM component in the same station cabinet.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MD7IC2755GNR1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MD7IC2755NR1 | MD7IC2250NR1 | MD7IC2050NR1 |
|---|---|---|---|---|
| Manufacturer | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270-14 Gull Wing | TO-270-14 Gull Wing | TO-270-14 Gull Wing | TO-270-14 Gull Wing |
| Frequency Range | 2500-2700 MHz | 2500-2700 MHz | 2300-2500 MHz | 1800-2050 MHz |
| Output Power (Pavg) | 10 W | 10 W | 10 W | 10 W |
| Gain | 25 dB | 25 dB | 25 dB | 25 dB |
| Supply Voltage | 28 V (26-32 V) | 28 V (26-32 V) | 28 V (26-32 V) | 28 V (26-32 V) |
| VSWR Ruggedness | 10:1 | 10:1 | 10:1 | 10:1 |
| Packaging Format | Tape & Reel (G suffix) | Tray (N suffix) | Tape & Reel / Tray | Tape & Reel / Tray |
Bảo phân biệt quan trọng
- Internally matched for 2.5-2.7 GHz band, eliminating external matching components (vsDiscrete LDMOS FET design)
- Production-tested in symmetrical Doherty configuration (vsMD7IC2250NR1)
- 100% PAR-tested output power capability (vsGeneric HV7IC parts without PAR characterization)
Ghi chú thiết kế
Estimated: at 10 W continuous output and 30% PA efficiency, the device dissipates approximately 23 W of heat into the PCB copper area beneath the TO-270-14 package. NXP datasheet thermal resistance must be used with PCB copper area to verify junction temperature stays below 200C. Use at least 4 square inches of 2 oz copper on the primary thermal pad, plus thermal vias to inner ground planes. For sustained CW operation, consider a small clip-on heatsink or forced-air cooling.
The MD7IC2755GNR1 evaluation board layout from the NXP datasheet should be used as a starting reference. Place the input and output RF traces as 50-ohm microstrip on the recommended substrate (typically Rogers RO4350 or similar low-loss material). Keep gate-bias traces short and decoupled with 100 pF + 10 nF + 10 uF capacitance stacks to suppress bias supply noise from modulating the gain. Star-ground the drain and gate bias returns to a common via close to the package thermal pad to prevent ground loops.
Use a low-noise 28 V linear or switching regulator rated for at least 3 A continuous with peak capability for modulated current transients. The datasheet recommends holding the drain voltage within 26-32 V. Slow ramp of the drain voltage (or proper sequence of gate-then-drain) prevents parametric drift and oscillation. Add a TVS diode rated for the 65 V transient rail to protect against load-dump or lightning-induced surges in outdoor installations.
Do not apply drain voltage without proper gate bias - this can cause thermal runaway and device damage. Do not retune the output matching network unless following NXP's documented impedance tables, because the on-chip matching is integral to the part's rated performance. Operating the device outside 2500-2700 MHz will significantly degrade efficiency and gain. Always observe the moisture sensitivity level handling procedures before SMT reflow to avoid package cracking.
Thông tin tuân thủ
Compliance information not explicitly provided in the verified web data excerpts; consult NXP material declaration documents for definitive RoHS, REACH, lead-free, and halogen-free status. AEC-Q100 is not applicable for RF power amplifier ICs used in base-station infrastructure.
