MD7P19130HSR5 - 40W RF Power LDMOS, 1.93-1.99 GHz | NXP
MPN: MD7P19130HSR5 ✓ Hoạt độngMD7P19130HSR5 Tóm tắt
An RF power LDMOS (Laterally Diffused MOSFET) is a specialized power transistor architecture that places the drain-current flow path laterally across the silicon die. This lateral structure gives LDMOS very high input impedance, excellent thermal performance, and superior gain-bandwidth product compared to vertical bipolar RF transistors, which is why LDMOS has become the dominant technology for sub-6 GHz cellular infrastructure. Within the broader taxonomy, the MD7P19130HSR5 belongs to RF & Wireless > RF Power Devices > LDMOS Power Transistors, sitting under the wider Discrete Semiconductors > Transistors > MOSFETs family tree.
The MD7P19130HSR5 offers an output power of 40 W minimum in the 1.93-1.99 GHz band, a power gain of approximately 20 dB, and is built around NXP's hardened LDMOS process that includes integrated ESD protection and a high breakdown voltage. The hermetic NI-780HS-4L ceramic package provides low thermal resistance, allowing the device to be operated at full output power with conventional base-plate cooling. The transistor's broadband matching capability makes it suitable for both narrowband and multi-carrier GSM / W-CDMA / LTE signal formats used in modern cellular infrastructure.
Typical applications include DCS1800 and PCS1900 base-station final stages, W-CDMA / 3GPP Node B power amplifiers, LTE small-cell and macro-cell transmitter outputs, and Doherty amplifier configurations where the MD7P19130HSR5 is paired with a smaller peaking amplifier. Its high gain reduces driver-stage complexity and lowers overall BOM cost in the RF chain.
When designing with the MD7P19130HSR5, ensure the drain supply is well-bypassed close to the package flange and that the input/output matching networks are designed on a low-loss substrate such as Rogers RO4003C. Heat-sinking must keep the flange below the datasheet-recommended operating temperature to maintain long-term MTBF in always-on base-station service.
For pricing and availability the MD7P19130HSR5 is normally stocked by NXP authorized distributors. Cross-reference the NXP product page for family variants and the distributor's parametric filters for similar 1.9 GHz / 40 W LDMOS options from other vendors such as Ampleon, Qorvo and Wolfspeed.
Bộ thay thế dễ dàng lắp đặt cho MD7P19130HSR5 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MD7P19130HSR5 (cùng hình factor và footprint) — khác nhau ở Mounting Type, Output Power (Pout), Package / Case, Technology, Transistor Type.
MD7P19130HSR3
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BLF6G10-40
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BLF6G10LS-40
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MD7P19130HSR5 Tỷ lệ tối đa & tính chất điện
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MD7P19130HSR5 |
| Kiểu transitor | LDMOS (Dual), N-Channel |
| Technology | RF Power LDMOS |
| Drain-Source Voltage (VDS) | 28 V (typical operating), 65 V (rated) |
| Drain Current (Continuous) | 1.25 A |
| Output Power (Pout) | 40 W (minimum, CW) |
| Power Gain (Gp) | 20 dB (typical at 1.99 GHz) |
| Operating Frequency | 1.93 GHz to 1.99 GHz |
| Frequency Band | DCS1800 / PCS1900 / UMTS / LTE Band 1/2/3 |
| Hộp / Vỏ | NI-780HS-4L (NI780HS-4 ceramic, flange mount) |
| Kiểu lắp đặt | Chassis / Flange Mount (through-hole flange) |
| Weight | 6.47 g |
| Trạng thái RoHS | Compliant |
| Test Conditions | VDS = 28 V, IDQ set per datasheet, f = 1.99 GHz, CW |
Cấu hình chân MD7P19130HSR5
| Chân 1 | GATE — RF gate input (DC bias + RF drive) |
| Chân 2 | DRAIN — Drain / RF output (also connected to flange) |
| Chân 3 | SOURCE — Source / ground (connected to flange) |
| Chân 4 | FLANGE — Mounting flange - thermal and electrical ground |
RF CW Khu vực hoạt động an toàn (1.99 GHz)
Ứng dụng tiêu biểu
MD7P19130HSR5 phù hợp cho 6 Áp dụngs: Cellular Base Station Final Amplifier (1.9 GHz), Doherty Power Amplifier Module, PCS1900 / DCS1800 Macro-Cell Power Amplifier, RF Industrial Heating & Plasma Generator, Repeater / Booster Station Power Stage, Test & Measurement RF Power Source.
Cellular Base Station Final Amplifier (1.9 GHz)
The MD7P19130HSR5 is purpose-built for the final stage of 1.93-1.99 GHz cellular base-station transmitters where 40 W of linear CW output is required. Its 28 V LDMOS architecture delivers ~20 dB of power gain, which simplifies the driver chain and reduces bill-of-material cost across the RF lineup. The NXP NI-780HS-4L ceramic flange-mount package provides low thermal resistance so the device sustains continuous full-power operation when bolted to a properly machined heatsink. In a typical deployment it produces a 40 W carrier amplifier output feeding a Doherty combiner or a single-ended Class AB line-up after external matching on a low-loss substrate such as Rogers RO4003C.
Được đề xuất
Doherty Power Amplifier Module
In a symmetric Doherty configuration, the MD7P19130HSR5 serves as the carrier amplifier while a smaller LDMOS part (often in the same NI-780 family) functions as the peaking amplifier. Its 40 W CW rating covers the carrier output even with the 6 dB back-off typical for high-efficiency Doherty operation, while the 20 dB gain keeps the input drive budget modest. The NI-780HS-4L flange package has identical pinout and lead spacing as the peaking device, allowing a compact, thermally symmetric PCB layout. Overall module efficiency is typically 40-45% at 8 dB PAR compared with ~30% for Class AB.
Được đề xuất
PCS1900 / DCS1800 Macro-Cell Power Amplifier
Within the 1.93-1.99 GHz PCS1900 and adjacent DCS1800 spectrum allocations the MD7P19130HSR5 provides the linear output power needed for 3GPP Node B and eNodeB transmitters. Its LDMOS process offers the high gain and broadband linearity required for W-CDMA, LTE and 5G NR sub-6 GHz signals with peak-to-average ratios up to ~8 dB. The 65 V drain breakdown margin gives headroom for line-voltage transients on the BTS rack, while the integrated ESD structure improves in-field reliability. The NI-780HS-4L package supports the chassis-mount thermal strategy used in standard rack-mounted macro-cell radios.
Được đề xuất
RF Industrial Heating & Plasma Generator
Industrial RF generators for plasma deposition, sputtering and dielectric heating benefit from the MD7P19130HSR5's 40 W continuous output at 1.99 GHz with high power gain. The LDMOS device class has proven reliability in harsh 24/7 industrial environments, and the NI-780HS-4L package survives vibration and thermal cycling when properly clamped to a rugged chassis. The transistor's 28 V rail matches common industrial bus voltages, simplifying power-supply design in 19-inch rack generator cabinets.
Được đề xuất
Repeater / Booster Station Power Stage
Off-grid and indoor cellular repeaters use 1.9 GHz power amplifiers to boost the donor signal before re-radiation through the coverage antenna. The MD7P19130HSR5's 40 W output and ~20 dB gain let a single device drive a repeater's coverage antenna for medium-size venues, eliminating one driver stage and reducing bill-of-material cost. The flange-mount NI-780HS-4L package bolts directly to the repeater's internal heat-spreader, and the ceramic body supports the long MTBF targets expected of always-on telecom infrastructure.
Được đề xuất
Test & Measurement RF Power Source
ATE systems and RF test equipment for wireless-component characterization need a clean, stable 1.9 GHz source capable of 40 W output to drive high-power device-under-test fixtures. The MD7P19130HSR5 provides this in a single chassis-mount package, and its broadband matching lets the same hardware support DUT validation across UMTS, LTE and 5G NR sub-2 GHz bands without retuning. The LDMOS process linearity supports gain and phase-linearity sweeps demanded by production RF testers.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MD7P19130HSR5 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MD7P19130HSR3 | BLF6G10-40 | BLF6G10LS-40 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Package | NI-780HS-4L | NI-780HS-4L (same) | NI-780HS-4L (same) | NI-780HS-4L (same) |
| Output Power (Pout, CW) | 40 W | 30 W (-25%) | 40 W (same) | 40 W (same) |
| Operating Frequency | 1.93-1.99 GHz | 1.93-1.99 GHz (same) | 1.8-2.0 GHz (close) | 0.7-1.0 GHz (different band) |
| Drain Supply (VDS) | 28 V | 28 V | 28 V | 28 V |
| Technology | LDMOS (N-channel) | LDMOS (N-channel) | LDMOS (N-channel) | LDMOS (N-channel) |
| Mounting Type | Flange mount (chassis) | Flange mount (chassis) | Flange mount (chassis) | Flange mount (chassis) |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Specifically tuned for the 1.93-1.99 GHz band (DCS / PCS / UMTS LTE) (vsAmpleon BLF6G10LS-40)
- NXP documented support and second-source family (vsAmpleon BLF6G10-40)
- Higher output power than sibling HSR3 in the same footprint (vsMD7P19130HSR3)
Ghi chú thiết kế
Estimated: at 40 W RF output and typical Doherty-class efficiency (~40%), the MD7P19130HSR5 dissipates roughly 60 W as waste heat (P_diss = P_out * (1 - eta)/eta). Mount the NI-780HS-4L flange to a chassis or heatsink with thermal compound, torque the mounting screws to the datasheet specification, and ensure the heat-spreader is sized so the flange temperature stays below 70 C in worst-case ambient. At full 40 W CW service the heat-sink thermal resistance to ambient should be below 0.4 C/W.
Solder the gate and drain leads only after the flange is bolted down and aligned to the RF cavity. Use a low-loss PCB substrate (Rogers RO4003C or RO4350B) for the input/output matching networks; FR-4 will add several tenths of a dB insertion loss at 1.99 GHz. Keep the gate-bias traces short and decoupled with 1 nF + 100 pF + 10 uF capacitors to prevent low-frequency oscillation.
Never operate the MD7P19130HSR5 without a sequenced gate bias applied before drain voltage - hot-switching the drain will blow the gate oxide. Gate bias must reach its quiescent value (IDQ per datasheet, typically 50-200 mA) before the 28 V rail is ramped up. Add gate-source Zener protection and verify the enable sequencing logic before applying RF drive.
Thông tin tuân thủ
RoHS compliant per distributor product pages. RF power transistor - AEC-Q100 automotive qualification not applicable; refer to supplier for any non-RF certification status.
