MRF8S23120HR5 - 120W RF Power LDMOS, 2.3GHz, 28V | NXP
MPN: MRF8S23120HR5 ✗ Cuối đờiMRF8S23120HR5 Tóm tắt
An RF power LDMOS transistor is a laterally-diffused MOSFET specifically engineered to handle tens to hundreds of watts of continuous radio-frequency power at frequencies from tens of megahertz to several gigahertz. Within the taxonomy, an LDMOS sits at the level of discrete semiconductor -> transistor -> MOSFET -> RF power MOSFET -> LDMOS. These devices form the final amplification stage in cellular base-station power amplifiers, microwave links, industrial RF heating, and aerospace telemetry systems. They offer a better gain-bandwidth product and thermal ruggedness than bipolar RF transistors, and lower conduction loss than GaAs solutions at this power tier.
Key features of the MRF8S23120HR5 include 65 V drain-source breakdown rating for high-voltage operation, integrated ESD protection, simple single-supply 28 V biasing, and broadband input/output matching friendly to Class AB operation. The device's gain flatness across the 2300-2400 MHz band makes it well suited for multi-carrier LTE signals where linearity matters.
Technical depth: The HV8 LDMOS process delivers 16 dB linear gain at 2.3 GHz with a typical output efficiency near 32% in CW Class AB. The internal package parasitic inductance is controlled through the NI-780H ceramic body, which also serves as the main thermal path. Built-in passive matching networks at the input ease external circuit design, while two bolt-down flanges provide low-thermal-resistance mounting directly to a heatsink or copper spreader. The device is rated for 28 W typical CW output at 28 V, with typical pulsed peak output at 120 W under narrow pulse conditions.
Typical applications include 2.3-2.4 GHz WiMAX and LTE small-cell/base-station power amplifiers, RF plasma drivers, industrial microwave heating, telemetry transmitters, and radar pulse chains. The 28 V rail and 50 ohm interface simplify integration into standard Doherty or push-pull amplifier architectures.
A key design consideration is heatsinking: the ceramic flanged package relies on the system chassis or external heatsink for thermal management. Without adequate heatsinking, junction temperature can exceed 200 C and degrade long-term reliability. Designers should mount the device to a machined aluminum or copper cold plate with a thin layer of thermal grease.
This page synthesizes distributor pricing (DigiKey, Mouser, LCSC), drop-in alternatives within the NI-780 family, and practical RF design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho MRF8S23120HR5 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
MRF8S23120HSR5
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MRF8S23120H
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MRF8S18230HR5
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MRF8S23120HR3
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MRF8S23120HR5 Tỷ lệ tối đa & tính chất điện
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Obsolete |
| Kiểu transitor | N-Channel LDMOS |
| Technology | HV8 LDMOS |
| Frequency | 2.3 GHz (operating band 2300-2400 MHz) |
| Gain | 16 dB (typical at 2.3 GHz, 28 V) |
| Drain-Source Voltage (Vdss) | 65 V |
| Test Voltage | 28 V |
| Test Current | 800 mA |
| Continuous Output Power (CW) | 28 W |
| Pulsed Output Power | 120 W (peak under narrow pulse) |
| Hộp | NI-780H-2L (SOT-957A) ceramic flanged |
| Kiểu lắp đặt | Chassis / bolt-down flange |
| Application Band | 2.3-2.4 GHz ISM / WiMAX / LTE |
Cấu hình chân MRF8S23120HR5
| Chân 1 | DRAIN (RF OUT) — RF output / drain terminal via ceramic body |
| Chân 2 | GATE (RF IN) — RF input / gate terminal via ceramic lead |
| Chân 3 | SOURCE (FLANGE) — Source / ground via mounting flange |
| Chân 4 | FLANGE — Mechanical and thermal ground (bolt-down) |
DC Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
MRF8S23120HR5 phù hợp cho 6 Áp dụngs: 2.3 GHz LTE / WiMAX Base-Station Power Amplifier, Industrial Microwave Heating / Plasma Driver, Aerospace / UAV Telemetry Transmitter, Radar Pulse Amplifier Driver, 2.4 GHz ISM Band Digital Video / Data Link, Medical / RF Ablation Source.
2.3 GHz LTE / WiMAX Base-Station Power Amplifier
The MRF8S23120HR5 serves as the final or driver stage in 2.3-2.4 GHz LTE band 38 and WiMAX base-station amplifiers. With 16 dB gain at 2.3 GHz, 28 V single-rail operation, and 28 W CW / 120 W pulsed output, it integrates directly into Class AB and Doherty amplifier architectures without requiring complex multi-rail supplies. Its NXP HV8 LDMOS technology provides the linearity required for multi-carrier LTE signals while keeping the BOM cost below GaN equivalents. The NI-780H ceramic flange conducts heat efficiently to a chassis-mounted cold plate, supporting continuous duty operation in cellular infrastructure. Designers pair it with 50 ohm microstrip/stripline matching on Rogers RO4350B substrates for production-ready modules.
Được đề xuất
Industrial Microwave Heating / Plasma Driver
At 2.3-2.4 GHz and 28 W continuous output, the MRF8S23120HR5 is a robust source for industrial microwave heating applicators and RF plasma drivers. Its 65 V drain-source breakdown rating gives substantial headroom for the voltage transients produced by mismatched plasma loads, and the NI-780H flange supports continuous duty at elevated junction temperatures. The broadband nature of LDMOS at 2.45 GHz ISM is well-documented for desiccation, sterilization, and plasma ignition systems. The single 28 V supply eliminates the high-voltage rail complexity typical of vacuum-tube RF sources, simplifying the cabinet-level power supply design.
Được đề xuất
Aerospace / UAV Telemetry Transmitter
Lightweight UAV and aerospace telemetry links in the 2.3-2.4 GHz band benefit from the MRF8S23120HR5's high power density and bolt-down thermal interface. At 120 W pulsed, the device provides link-margin headroom for long-range telemetry or command links, while 16 dB gain keeps the driver chain short. The NI-780H ceramic package withstands the vibration profile of airborne platforms when properly clamped, and the 28 V rail matches typical UAV power bus architectures. Mission durations up to several hours are feasible with proper heatsinking and pulsed-duty-cycle operation.
Được đề xuất
Radar Pulse Amplifier Driver
S-band radar systems operating near 2.3 GHz use the MRF8S23120HR5 as a pulse-power driver delivering 120 W peak under narrow pulse conditions per the NXP datasheet. The HV8 LDMOS technology handles the high peak-to-average power ratio of radar pulses while maintaining flat gain across the pulse width. The 50 ohm interface allows direct integration between the waveform generator and the final-stage TWT or magnetron replacement. Designers operate the device well below its CW rating to extend junction-temperature cycling life in pulsed service.
Được đề xuất
2.4 GHz ISM Band Digital Video / Data Link
Unlicensed 2.4 GHz digital video and data links operating near the upper edge of the ISM band use the MRF8S23120HR5 to deliver the 28 W CW output required for long-range point-to-point links. Its 16 dB gain and broadband input matching simplify the transmitter chain, and the LDMOS linearity supports modern OFDM and 64-QAM modulations. The NI-780H flange enables outdoor weatherized enclosures with external heatsinking. For regulatory-compliance Class AB operation, output power is typically back-off 2-3 dB to meet spectral mask requirements.
Được đề xuất
Medical / RF Ablation Source
RF ablation and diathermy systems operating at 2.45 GHz ISM use the MRF8S23120HR5 as a stable 28 W CW source with controlled output into variable tissue loads. The LDMOS technology's tolerance for load-mismatch (VSWR up to 10:1 with reduced power) is essential for medical safety where antenna contact may vary. The single 28 V supply and chassis-mountable NI-780H package integrate cleanly into medical-device enclosures with appropriate isolation barriers. NXP's long-term reliability data on the HV8 process supports medical device qualification paths.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MRF8S23120HR5 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MRF8S23120HSR5 | MRF8S23120H | MRF8S18230HR5 | MRF8S23120HR3 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (SOT-957A) | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same |
| Frequency | 2.3 GHz | 2.3 GHz | 2.3 GHz | 1.8 GHz | 2.3 GHz |
| Gain (typ) | 16 dB | 16 dB | 15.5 dB (lower gain bin) | 17 dB at 1.8 GHz | 16 dB |
| CW Output Power | 28 W | 28 W | 28 W | 30 W | 28 W |
| Pulsed Peak Power | 120 W | 120 W | 120 W | 120 W | 120 W |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Breakdown (Vdss) | 65 V | 65 V | 65 V | 65 V | 65 V |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Bảo phân biệt quan trọng
- 28 V single-rail operation (vsGaN HEMT alternatives (e.g., NXP Airfast AFSC5G series))
- Lower BOM cost at sub-3 GHz (vsAmpleon BLF2425M7LS250P 2.45 GHz LDMOS)
- Mature HV8 LDMOS reliability data (vsNewer Airfast GaN platforms)
Ghi chú thiết kế
Estimated: At 28 W CW output into 50 ohm load with 32% drain efficiency, internal power dissipation is roughly 60 W. The NI-780H ceramic flange must be bolted to a machined aluminum or copper cold plate with thermal grease; without it, junction temperature will exceed 200 C and trigger thermal shutdown or permanent degradation. For continuous-duty 28 W CW service, target a system thermal resistance below 0.5 C/W between the device flange and the chassis cold plate, verified by thermocouple measurement at the flange.
RF input and output traces must use 50 ohm controlled-impedance microstrip or stripline on a low-loss substrate such as Rogers RO4350B (dielectric constant 3.48, loss tangent 0.0027). Place DC-bias decoupling capacitors as close as possible to the gate and drain leads to suppress low-frequency oscillation. A 10 uF electrolytic plus 100 nF ceramic in parallel at each bias feedthrough is recommended. Source grounding must use multiple short bond wires or ribbon to the flange to minimize common-source inductance.
Do not operate the MRF8S23120HR5 above 28 V VDD without re-characterizing efficiency and gain - the datasheet specifies 28 V as the test condition, and over-voltage operation accelerates drain-current collapse. The device has no internal over-voltage protection. Confirm that your 28 V supply is current-limited and includes in-rush protection to prevent over-current during warm-up. In pulsed service, monitor the duty cycle carefully; continuous duty at 120 W peak will exceed the CW thermal limit within seconds.
Use a copper spreader or coin directly under the NI-780H flange to distribute heat into the chassis. Keep RF input and output traces physically separated to avoid feedback oscillation; a small gate-series resistor (1-10 ohm) often stabilizes marginal layouts. For Class AB bias, target 800 mA quiescent current at 28 V per the datasheet test condition, and add a potentiometer or digital-to-analog bias control for thermal compensation over temperature.
Thông tin tuân thủ
Obsolete part; full compliance data should be confirmed via the latest NXP product-change notification or Rochester Electronics documentation before volume use.
