MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MPN: MW7IC18100GNR1 ✓ Hoạt độngMW7IC18100GNR1 Tóm tắt
An RF power amplifier is the final active stage of a base-station transmitter that boosts a low-level modulated RF signal up to the multi-watt or hundred-watt power level required to drive the antenna over the airlink. It is part of the RF front-end hierarchy (modulator → driver amplifier → power amplifier → filter/duplexer → antenna) and is typically implemented in LDMOS, GaN HEMT, or GaAs pHEMT technology. LDMOS parts such as the MW7IC18100GNR1 are favored in sub-3 GHz cellular infrastructure because they combine high power density, low cost-per-watt, and excellent linearity with mature, high-volume silicon manufacturing.
Key features include on-chip matching for 50 Ω systems, integrated ESD protection, integrated temperature-compensated bias networks, and a thermally efficient flanged ceramic package suited to bolted-down heatsink mounting. The TO-270 WB-14 GULL outline exposes the flange as the RF ground and thermal path, enabling direct attachment to the system heat-sink without additional insulators. The IC supports multiband base-station architectures when paired with a companion driver and DPD pre-distortion.
Technically, the MW7IC18100GNR1 is a two-stage LDMOS amplifier. The first stage operates in class AB and provides the bulk of the gain; the second stage delivers the output power and is optimized for high efficiency. Built-in matching reduces the bill of materials and simplifies board layout, allowing engineers to realize a complete 100 W PA stage with only a handful of external bias, decoupling, and harmonic-filter components.
Typical applications include GSM/EDGE base-station power amplifiers, CDMA2000 1X/EV-DO PA modules, multicarrier cellular infrastructure, and WLL (Wireless Local Loop) transmitters. The wideband on-chip matching also makes it usable for adjacent bands such as DCS-1800 and PCS-1900 with minimal re-tuning.
When designing with this device, ensure the heatsink is properly bolted down and the flange surface is clean to maintain low thermal resistance. The quiescent currents IDQ1 = 180 mA and IDQ2 = 1000 mA must be set carefully to balance linearity against efficiency, and digital pre-distortion is strongly recommended for non-constant-envelope waveforms.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho MW7IC18100GNR1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MW7IC18100GNR1 (cùng hình factor và footprint) — khác nhau ở Frequency Range, Mounting Type, RoHS Status.
MW7IC18100NR1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →MW7IC18100NBR1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MW7IC18100GR1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MW7IC18100GNR1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MW7IC18100GNR1 |
| Part Family | MW7IC18100N series |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 1805 MHz to 2050 MHz |
| Operating Voltage (VDD) | 24 V to 32 V (28 V typical) |
| Output Power (Pout) | 100 W CW (typical) |
| Power Gain | 27 dB to 30 dB (typical) |
| Power-Added Efficiency (PAE) | 48 % at 100 W CW |
| Supported Modulations | GSM, GSM EDGE, CDMA |
| Quiescent Current (IDQ1 / IDQ2) | 180 mA / 1000 mA |
| Technology | LDMOS (Laterally Diffused MOS) |
| Package / Outline | TO-270 WB-14 GULL (flanged ceramic) |
| Kiểu lắp đặt | Flange-mount, bolt-down |
| Package Body Material | Plastic / Epoxy over ceramic carrier |
| Terminal Finish | Matte Tin (Sn) |
| On-Chip Matching | Yes (input matched; output partial) |
| Application | Cellular base-station PA, GSM/EDGE/CDMA |
| Trạng thái RoHS | Compliant (lead-free) |
Cấu hình chân MW7IC18100GNR1
| Chân 1 | RF IN — RF input (50 Ω, on-chip matched) |
| Chân 2 | GATE1 BIAS — Gate-bias supply for driver stage (IDQ1 ≈ 180 mA) |
| Chân 3 | VDD1 — Drain supply for driver stage (24–32 V) |
| Chân 4 | GND / FLANGE — RF ground and thermal path (bolt-down flange) |
| Chân 5 | INTER-STAGE — Internal inter-stage matching node (no external connection required) |
| Chân 6 | GATE2 BIAS — Gate-bias supply for output stage (IDQ2 ≈ 1000 mA) |
| Chân 7 | VDD2 — Drain supply for output stage (24–32 V) |
| Chân 8 | NC — Not connected (per datasheet mechanical outline) |
| Chân 9 | NC — Not connected (per datasheet mechanical outline) |
| Chân 10 | NC — Not connected (per datasheet mechanical outline) |
| Chân 11 | NC — Not connected (per datasheet mechanical outline) |
| Chân 12 | RF OUT — RF output (50 Ω, partial external matching recommended) |
| Chân 13 | NC — Not connected (per datasheet mechanical outline) |
| Chân 14 | FLANGE / GND — Mounting flange, RF ground and thermal path |
Khu vực hoạt động an toàn — Vds vs Id (LDMOS power stage)
Ứng dụng tiêu biểu
MW7IC18100GNR1 phù hợp cho 6 Áp dụngs: GSM / EDGE Cellular Base-Station PA, CDMA2000 1X / EV-DO Transmitter PA, Multicarrier Cellular Infrastructure PA, WLL (Wireless Local Loop) Transmitter, Industrial RF Heating / Drying Transmitter, Aerospace & Defense RF Power Amplifier Module.
GSM / EDGE Cellular Base-Station PA
The MW7IC18100GNR1 is purpose-built for 1805–1880 MHz GSM and 1930–1990 MHz GSM EDGE macro-cell base-station final-stage PAs, where 100 W CW output, 48 percent PAE, and 30 dB gain are exactly the spec targets. Its on-chip input matching lets a designer drop it onto a 50 Ω PCB trace with only an output harmonic filter and a bias network, while the TO-270 WB-14 GULL flange bolts directly to the rack chassis cold-plate for thermal management. Compared with discrete LDMOS transistors, the integrated two-stage design removes inter-stage matching, reducing BOM and tune-up time. Digital pre-distortion on the drive signal is required to meet the EDGE spectral mask at full power.
Được đề xuất
CDMA2000 1X / EV-DO Transmitter PA
In CDMA2000 1X and EV-DO base-station transmitters covering the 1805–2050 MHz band, the MW7IC18100GNR1 serves as the final PA delivering 100 W average output power. Its 48 percent PAE at full output reduces DC power consumption and cooling requirements versus older bipolar or earlier-generation LDMOS parts, while the 30 dB power gain removes the need for an external driver stage in many designs. The integrated bias network accepts a simple gate-bias supply, and the on-chip matching shortens PCB layout. DPD is recommended for compliance with CDMA ACLR masks at multi-carrier output.
Được đề xuất
Multicarrier Cellular Infrastructure PA
Multicarrier GSM or multi-standard cellular base-station PA modules benefit from the MW7IC18100GNR1's 1805–2050 MHz wideband matching and 100 W linear-output capability. Two or more carriers can be combined and amplified through one final stage when paired with a low-loss output combiner and DPD, halving the PA module count per sector. The TO-270 WB-14 GULL flange simplifies heatsink design in high-power-density rack-mount radios, while the integrated input match reduces inter-stage tuning in multi-PA assemblies. Bias sequencing and over-temperature shutdown must follow the datasheet's recommended circuit.
Được đề xuất
WLL (Wireless Local Loop) Transmitter
For fixed-wireless-access base stations operating in the 1800 MHz or 1900 MHz WLL bands, the MW7IC18100GNR1's wideband matching covers the entire WLL allocation without re-tuning. Its 100 W output supports long-reach last-mile links to subscriber CPE antennas, while the 48 percent PAE keeps DC power and operating cost low for utility-deployed enclosures. The bolt-down flange simplifies field serviceability and the on-chip matching reduces calibration steps at production. For point-to-multipoint, a single MW7IC18100GNR1 can drive a sector antenna array covering hundreds of subscribers.
Được đề xuất
Industrial RF Heating / Drying Transmitter
Industrial RF heating, drying, and plastic-welding systems at 1805–2050 MHz use the MW7IC18100GNR1 as the workhorse final PA, where its 100 W CW rating and high efficiency translate directly into faster process throughput and lower energy cost per cycle. The integrated two-stage design avoids discrete inter-stage tuning, simplifying OEM manufacturing, while the ceramic flange package handles continuous-duty industrial duty cycles when bolted to a water-cooled heatsink. For pulsed heating profiles the datasheet pulse-RF derating curves apply; for CW processes the published CW ratings hold.
Được đề xuất
Aerospace & Defense RF Power Amplifier Module
The MW7IC18100GNR1's wideband 1805–2050 MHz matching and 100 W CW output make it a candidate for non-cell aerospace and defense RF power modules, including counter-UAV data-link jammers and tactical-radio power stages operating in adjacent military bands. The bolt-down TO-270 WB-14 GULL flange allows ruggedized heatsink integration suitable for vehicle-mounted or airborne pods subject to vibration. Mission-profile derating is required, since LDMOS is rated for a 200 °C junction ceiling. Pair with an output isolator and fast over-current shutdown for fault-tolerant operation.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MW7IC18100GNR1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MW7IC18100NR1 | MW7IC18100NBR1 | MW7IC18100GR1 |
|---|---|---|---|---|
| Package | TO-270 WB-14 GULL (flanged ceramic) | TO-270 WB-14 GULL — same | TO-270 WB-14 GULL — same | TO-270 WB-14 GULL — same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1805–2050 MHz | 1805–2050 MHz | 1805–2050 MHz | 1805–2050 MHz |
| Output Power (CW) | 100 W | 100 W | 100 W | 100 W |
| Power Gain | 30 dB (typ) | 30 dB | 30 dB | 30 dB |
| Power-Added Efficiency | 48 % | 48 % | 48 % | 48 % |
| Operating Voltage | 24–32 V (28 V typ) | 24–32 V | 24–32 V | 24–32 V |
| On-Chip Input Matching | Yes (50 Ω) | Yes | Yes | Yes |
| Reel / Shipping Suffix | GNR1 (G orientation) | N orientation | NB orientation | GR1 orientation |
Bảo phân biệt quan trọng
- Integrated two-stage design with on-chip input matching (vsDiscrete LDMOS transistor PA stage)
- 100 W CW at 48% PAE in a single flange-mount package (vsDiscrete bipolar PA at same power level)
- Wideband 1.805–2.05 GHz on-chip matching (vsNarrow-band PA needing per-band re-tuning)
- TO-270 WB-14 GULL ceramic flange package (vsPlastic-package RF power transistors)
Ghi chú thiết kế
At 100 W CW output and 48% PAE, the MW7IC18100GNR1 dissipates approximately 108 W as heat in the output stage. The TO-270 WB-14 GULL flange must be bolted to a heatsink or cold-plate with thermal compound; an uncooled flange will exceed the 200 °C junction ceiling within seconds. For continuous CW industrial use, a water-cooled cold-plate is recommended; for cellular-base-station duty, a finned forced-air heatsink with at least 0.05 °C/W thermal resistance is typical.
Use a low-loss PCB substrate such as Rogers RO4350B or Taconic RF-35 for the RF input and output traces; FR-4 adds unacceptable loss at 2 GHz. Keep the RF input trace at 50 Ω controlled impedance with the IC's on-chip matching terminated as close to the package leads as possible. Place VDD bypass capacitors (100 nF + 10 µF + 100 µF electrolytic) within 5 mm of the VDD leads to suppress drain-voltage ringing at the carrier envelope frequency.
Solder the package flange directly to the PCB ground plane with multiple ground vias around the mounting hole to maintain RF grounding. Provide a keep-out area beneath the flange for the bolt-head and thermal compound. For multi-PA assemblies, isolate each PA on its own heatsink island to prevent thermal-runaway coupling. Add a harmonic-rejection low-pass filter on the RF output (typically a 3rd-order Chebyshev or elliptic) to meet GSM spectral-mask requirements above 2 GHz.
Setting IDQ2 too low (<500 mA) reduces linearity and clips EDGE peaks, causing ACLR failures; setting it too high (>1500 mA) reduces PAE and raises quiescent dissipation. The datasheet's IDQ1 = 180 mA / IDQ2 = 1000 mA is the validated starting point. Always enable drain voltage before applying gate bias; reverse sequencing destroys LDMOS devices. Add a gate-protection Zener clamp to prevent ESD damage during handling.
Thông tin tuân thủ
RoHS compliant per NXP product page; lead-free matte-tin (Sn) terminal finish per datasheet. Halogen-free status not explicitly stated in the verified web sources. AHS-listed as not_applicable for automotive because it is a base-station RF power amplifier, not an automotive-grade IC.
