MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
Teilenummer: MW7IC18100GNR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132 | $1.320,00 |
| 50 | $121 | $6.050,00 |
| 100 | $112 | $11.200,00 |
| 500 | $99.5 | $49.750,00 |
MW7IC18100GNR1 Übersicht
An RF power amplifier is the final active stage of a base-station transmitter that boosts a low-level modulated RF signal up to the multi-watt or hundred-watt power level required to drive the antenna over the airlink. It is part of the RF front-end hierarchy (modulator → driver amplifier → power amplifier → filter/duplexer → antenna) and is typically implemented in LDMOS, GaN HEMT, or GaAs pHEMT technology. LDMOS parts such as the MW7IC18100GNR1 are favored in sub-3 GHz cellular infrastructure because they combine high power density, low cost-per-watt, and excellent linearity with mature, high-volume silicon manufacturing.
Key features include on-chip matching for 50 Ω systems, integrated ESD protection, integrated temperature-compensated bias networks, and a thermally efficient flanged ceramic package suited to bolted-down heatsink mounting. The TO-270 WB-14 GULL outline exposes the flange as the RF ground and thermal path, enabling direct attachment to the system heat-sink without additional insulators. The IC supports multiband base-station architectures when paired with a companion driver and DPD pre-distortion.
Technically, the MW7IC18100GNR1 is a two-stage LDMOS amplifier. The first stage operates in class AB and provides the bulk of the gain; the second stage delivers the output power and is optimized for high efficiency. Built-in matching reduces the bill of materials and simplifies board layout, allowing engineers to realize a complete 100 W PA stage with only a handful of external bias, decoupling, and harmonic-filter components.
Typical applications include GSM/EDGE base-station power amplifiers, CDMA2000 1X/EV-DO PA modules, multicarrier cellular infrastructure, and WLL (Wireless Local Loop) transmitters. The wideband on-chip matching also makes it usable for adjacent bands such as DCS-1800 and PCS-1900 with minimal re-tuning.
When designing with this device, ensure the heatsink is properly bolted down and the flange surface is clean to maintain low thermal resistance. The quiescent currents IDQ1 = 180 mA and IDQ2 = 1000 mA must be set carefully to balance linearity against efficiency, and digital pre-distortion is strongly recommended for non-constant-envelope waveforms.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für MW7IC18100GNR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MW7IC18100GNR1 (gleiche Bauform und Footprint) – abweichend in Frequency Range, Mounting Type, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MW7IC18100NR1
✅ Drop-In✓ Auf Lager
$61.2 / Stück
Datenblatt ansehen →MW7IC18100NBR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MW7IC18100GR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MW7IC18100GNR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MW7IC18100GNR1 |
| Part Family | MW7IC18100N series |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | 1805 MHz to 2050 MHz |
| Operating Voltage (VDD) | 24 V to 32 V (28 V typical) |
| Output Power (Pout) | 100 W CW (typical) |
| Power Gain | 27 dB to 30 dB (typical) |
| Power-Added Efficiency (PAE) | 48 % at 100 W CW |
| Supported Modulations | GSM, GSM EDGE, CDMA |
| Quiescent Current (IDQ1 / IDQ2) | 180 mA / 1000 mA |
| Technology | LDMOS (Laterally Diffused MOS) |
| Package / Outline | TO-270 WB-14 GULL (flanged ceramic) |
| Montageart | Flange-mount, bolt-down |
| Package Body Material | Plastic / Epoxy over ceramic carrier |
| Terminal Finish | Matte Tin (Sn) |
| On-Chip Matching | Yes (input matched; output partial) |
| Application | Cellular base-station PA, GSM/EDGE/CDMA |
| RoHS-Status | Compliant (lead-free) |
MW7IC18100GNR1 Pin-Konfiguration
| Pin 1 | RF IN — RF input (50 Ω, on-chip matched) |
| Pin 2 | GATE1 BIAS — Gate-bias supply for driver stage (IDQ1 ≈ 180 mA) |
| Pin 3 | VDD1 — Drain supply for driver stage (24–32 V) |
| Pin 4 | GND / FLANGE — RF ground and thermal path (bolt-down flange) |
| Pin 5 | INTER-STAGE — Internal inter-stage matching node (no external connection required) |
| Pin 6 | GATE2 BIAS — Gate-bias supply for output stage (IDQ2 ≈ 1000 mA) |
| Pin 7 | VDD2 — Drain supply for output stage (24–32 V) |
| Pin 8 | NC — Not connected (per datasheet mechanical outline) |
| Pin 9 | NC — Not connected (per datasheet mechanical outline) |
| Pin 10 | NC — Not connected (per datasheet mechanical outline) |
| Pin 11 | NC — Not connected (per datasheet mechanical outline) |
| Pin 12 | RF OUT — RF output (50 Ω, partial external matching recommended) |
| Pin 13 | NC — Not connected (per datasheet mechanical outline) |
| Pin 14 | FLANGE / GND — Mounting flange, RF ground and thermal path |
Sicherer Arbeitsbereich — Vds vs Id (LDMOS power stage)
Typische Anwendungen
MW7IC18100GNR1 ist geeignet für 6 Anwendungs: GSM / EDGE Cellular Base-Station PA, CDMA2000 1X / EV-DO Transmitter PA, Multicarrier Cellular Infrastructure PA, WLL (Wireless Local Loop) Transmitter, Industrial RF Heating / Drying Transmitter, Aerospace & Defense RF Power Amplifier Module.
GSM / EDGE Cellular Base-Station PA
The MW7IC18100GNR1 is purpose-built for 1805–1880 MHz GSM and 1930–1990 MHz GSM EDGE macro-cell base-station final-stage PAs, where 100 W CW output, 48 percent PAE, and 30 dB gain are exactly the spec targets. Its on-chip input matching lets a designer drop it onto a 50 Ω PCB trace with only an output harmonic filter and a bias network, while the TO-270 WB-14 GULL flange bolts directly to the rack chassis cold-plate for thermal management. Compared with discrete LDMOS transistors, the integrated two-stage design removes inter-stage matching, reducing BOM and tune-up time. Digital pre-distortion on the drive signal is required to meet the EDGE spectral mask at full power.
Empfohlen
CDMA2000 1X / EV-DO Transmitter PA
In CDMA2000 1X and EV-DO base-station transmitters covering the 1805–2050 MHz band, the MW7IC18100GNR1 serves as the final PA delivering 100 W average output power. Its 48 percent PAE at full output reduces DC power consumption and cooling requirements versus older bipolar or earlier-generation LDMOS parts, while the 30 dB power gain removes the need for an external driver stage in many designs. The integrated bias network accepts a simple gate-bias supply, and the on-chip matching shortens PCB layout. DPD is recommended for compliance with CDMA ACLR masks at multi-carrier output.
Empfohlen
Multicarrier Cellular Infrastructure PA
Multicarrier GSM or multi-standard cellular base-station PA modules benefit from the MW7IC18100GNR1's 1805–2050 MHz wideband matching and 100 W linear-output capability. Two or more carriers can be combined and amplified through one final stage when paired with a low-loss output combiner and DPD, halving the PA module count per sector. The TO-270 WB-14 GULL flange simplifies heatsink design in high-power-density rack-mount radios, while the integrated input match reduces inter-stage tuning in multi-PA assemblies. Bias sequencing and over-temperature shutdown must follow the datasheet's recommended circuit.
Empfohlen
WLL (Wireless Local Loop) Transmitter
For fixed-wireless-access base stations operating in the 1800 MHz or 1900 MHz WLL bands, the MW7IC18100GNR1's wideband matching covers the entire WLL allocation without re-tuning. Its 100 W output supports long-reach last-mile links to subscriber CPE antennas, while the 48 percent PAE keeps DC power and operating cost low for utility-deployed enclosures. The bolt-down flange simplifies field serviceability and the on-chip matching reduces calibration steps at production. For point-to-multipoint, a single MW7IC18100GNR1 can drive a sector antenna array covering hundreds of subscribers.
Empfohlen
Industrial RF Heating / Drying Transmitter
Industrial RF heating, drying, and plastic-welding systems at 1805–2050 MHz use the MW7IC18100GNR1 as the workhorse final PA, where its 100 W CW rating and high efficiency translate directly into faster process throughput and lower energy cost per cycle. The integrated two-stage design avoids discrete inter-stage tuning, simplifying OEM manufacturing, while the ceramic flange package handles continuous-duty industrial duty cycles when bolted to a water-cooled heatsink. For pulsed heating profiles the datasheet pulse-RF derating curves apply; for CW processes the published CW ratings hold.
Empfohlen
Aerospace & Defense RF Power Amplifier Module
The MW7IC18100GNR1's wideband 1805–2050 MHz matching and 100 W CW output make it a candidate for non-cell aerospace and defense RF power modules, including counter-UAV data-link jammers and tactical-radio power stages operating in adjacent military bands. The bolt-down TO-270 WB-14 GULL flange allows ruggedized heatsink integration suitable for vehicle-mounted or airborne pods subject to vibration. Mission-profile derating is required, since LDMOS is rated for a 200 °C junction ceiling. Pair with an output isolator and fast over-current shutdown for fault-tolerant operation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MW7IC18100GNR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MW7IC18100NR1 | MW7IC18100NBR1 | MW7IC18100GR1 |
|---|---|---|---|---|
| Package | TO-270 WB-14 GULL (flanged ceramic) | TO-270 WB-14 GULL — same | TO-270 WB-14 GULL — same | TO-270 WB-14 GULL — same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1805–2050 MHz | 1805–2050 MHz | 1805–2050 MHz | 1805–2050 MHz |
| Output Power (CW) | 100 W | 100 W | 100 W | 100 W |
| Power Gain | 30 dB (typ) | 30 dB | 30 dB | 30 dB |
| Power-Added Efficiency | 48 % | 48 % | 48 % | 48 % |
| Operating Voltage | 24–32 V (28 V typ) | 24–32 V | 24–32 V | 24–32 V |
| On-Chip Input Matching | Yes (50 Ω) | Yes | Yes | Yes |
| Reel / Shipping Suffix | GNR1 (G orientation) | N orientation | NB orientation | GR1 orientation |
Wichtigste Unterscheidungsmerkmale
- Integrated two-stage design with on-chip input matching (vs. Discrete LDMOS transistor PA stage)
- 100 W CW at 48% PAE in a single flange-mount package (vs. Discrete bipolar PA at same power level)
- Wideband 1.805–2.05 GHz on-chip matching (vs. Narrow-band PA needing per-band re-tuning)
- TO-270 WB-14 GULL ceramic flange package (vs. Plastic-package RF power transistors)
Designhinweise
At 100 W CW output and 48% PAE, the MW7IC18100GNR1 dissipates approximately 108 W as heat in the output stage. The TO-270 WB-14 GULL flange must be bolted to a heatsink or cold-plate with thermal compound; an uncooled flange will exceed the 200 °C junction ceiling within seconds. For continuous CW industrial use, a water-cooled cold-plate is recommended; for cellular-base-station duty, a finned forced-air heatsink with at least 0.05 °C/W thermal resistance is typical.
Use a low-loss PCB substrate such as Rogers RO4350B or Taconic RF-35 for the RF input and output traces; FR-4 adds unacceptable loss at 2 GHz. Keep the RF input trace at 50 Ω controlled impedance with the IC's on-chip matching terminated as close to the package leads as possible. Place VDD bypass capacitors (100 nF + 10 µF + 100 µF electrolytic) within 5 mm of the VDD leads to suppress drain-voltage ringing at the carrier envelope frequency.
Solder the package flange directly to the PCB ground plane with multiple ground vias around the mounting hole to maintain RF grounding. Provide a keep-out area beneath the flange for the bolt-head and thermal compound. For multi-PA assemblies, isolate each PA on its own heatsink island to prevent thermal-runaway coupling. Add a harmonic-rejection low-pass filter on the RF output (typically a 3rd-order Chebyshev or elliptic) to meet GSM spectral-mask requirements above 2 GHz.
Setting IDQ2 too low (<500 mA) reduces linearity and clips EDGE peaks, causing ACLR failures; setting it too high (>1500 mA) reduces PAE and raises quiescent dissipation. The datasheet's IDQ1 = 180 mA / IDQ2 = 1000 mA is the validated starting point. Always enable drain voltage before applying gate bias; reverse sequencing destroys LDMOS devices. Add a gate-protection Zener clamp to prevent ESD damage during handling.
Compliance-Informationen
RoHS compliant per NXP product page; lead-free matte-tin (Sn) terminal finish per datasheet. Halogen-free status not explicitly stated in the verified web sources. AHS-listed as not_applicable for automotive because it is a base-station RF power amplifier, not an automotive-grade IC.
