NRVBS360BT3G - 60V 3A SMB Schottky Rectifier | onsemi
MPN: NRVBS360BT3G ✓ Hoạt độngNRVBS360BT3G Tóm tắt
A Schottky rectifier is a majority-carrier diode that uses a metal-semiconductor junction instead of a P-N junction, producing a lower forward voltage drop (typically 0.5-0.9 V) and eliminating reverse-recovery charge. Within the discrete power-semiconductor hierarchy, Schottky rectifiers sit below standard recovery rectifiers and SiC diodes, and are widely used in 12 V/24 V/48 V power conversion subsystems where switching frequency and conduction loss dominate the thermal budget.
Key features of the NRVBS360BT3G include a forward voltage of approximately 0.63 V at 3 A, a maximum DC reverse voltage (VRRM) of 60 V, and an operating junction temperature range of -55 C to +150 C. Its surface-mount SMB package supports automated assembly and provides a cathode-band polarity marker. The metal-overlay contact construction ensures robust thermal performance and long-term reliability in surface-mount reflow profiles.
The device architecture combines a large-area Schottky junction with oxide passivation, which minimizes leakage current at high temperatures and increases avalanche energy capability. The lack of reverse-recovery charge makes the part especially useful in high-frequency switch-mode power supplies, where conventional P-N rectifiers would generate switching losses and EMI.
Typical applications include free-wheeling diodes in DC-DC converters, polarity protection in low-voltage systems, OR-ing diodes in redundant power architectures, and high-frequency rectification in switch-mode power supplies. It is also used as a steering diode in battery chargers and as a bypass diode in low-voltage solar panels.
When designing with this part, ensure the thermal path is adequate for the application. At 3 A and 0.63 V forward voltage, conduction loss is approximately 1.9 W; verify junction temperature under worst-case load. Place the SMB pad pattern per JEDEC DO-214AA land recommendations and observe the polarity band to avoid reverse installation.
This page synthesizes verified distributor pricing, drop-in pin-compatible alternatives, application guidance, and design considerations not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho NRVBS360BT3G — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
MBRS360BT3G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NRVBS360T3G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SS36
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
B360
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SK36
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NRVBS360BT3G Tỷ lệ tối đa & tính chất điện
| Diode Type | Schottky Rectifier |
| Configuration | Single |
| Reverse Voltage (VRRM) | 60 V |
| Forward Current (IF avg) | 3.0 A |
| Forward Voltage (VF) at IF=3A | 0.63 V (typical) |
| Nhiệt độ mối nối hoạt động | -55 C to +150 C |
| Storage Temperature | -55 C to +150 C |
| Hộp | SMB (DO-214AA) |
| Kiểu lắp đặt | Surface Mount |
| Polarity | Cathode band |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Qualification | AEC-Q101 automotive-grade (NRV prefix) |
Cấu hình chân NRVBS360BT3G
| Chân 1 | Anode — Positive terminal (unmarked side of SMB package) |
| Chân 2 | Cathode — Negative terminal (marked with band on SMB package body) |
Ứng dụng tiêu biểu
NRVBS360BT3G phù hợp cho 6 Áp dụngs: 12V/24V Automotive Free-Wheeling Diode, Switch-Mode Power Supply Output Rectifier, Battery Polarity Protection, OR-ing Diode in Redundant Power Systems, Solar Panel Bypass Diode, DC-DC Converter Steering Diode.
12V/24V Automotive Free-Wheeling Diode
The NRVBS360BT3G is well-suited as a free-wheeling rectifier across inductive loads such as relays, solenoids, and motor windings in 12 V/24 V automotive systems. With a 60 V VRRM that comfortably exceeds 24 V transient excursions and a 3 A continuous current rating that covers most single-coil actuator circuits, the part reliably clamps the back-EMF when the inductor is de-energized. Its AEC-Q101 automotive qualification under the NRV prefix provides PPAP and supply-chain evidence required by automotive OEMs. The Schottky architecture eliminates reverse-recovery charge, reducing switching losses and EMI in PWM-driven loads up to 100 kHz. Place the SMB pad near the inductor with a 1 square-inch copper pour; conduction loss at 2 A averages about 1.2 W, well within SMB thermal limits when properly mounted.
Được đề xuất
Switch-Mode Power Supply Output Rectifier
In isolated and non-isolated switch-mode power supplies (SMPS) with 12 V to 48 V outputs, the NRVBS360BT3G serves as a high-frequency output rectifier replacing slower P-N diodes. Its lack of reverse-recovery charge eliminates the switching loss and ringing typically associated with P-N rectifiers in continuous-conduction-mode (CCM) designs operating above 100 kHz. The 60 V rating covers 48 V nominal rails with adequate derating for transients, while 3 A supports 100-150 W converter output levels. Mount the SMB adjacent to the transformer/inductor footprint to minimize loop inductance, and add a small RC snubber if the converter operates above 250 kHz to control ringing from junction capacitance.
Được đề xuất
Battery Polarity Protection
The NRVBS360BT3G acts as a reverse-polarity protection diode in battery-powered systems and industrial backup-power architectures. When wired in series with the positive rail, the device blocks current flow if a battery is installed with reversed polarity, protecting downstream DC-DC converters and load circuits. The 0.63 V typical forward drop is acceptable for 12 V and higher rails where the regulation budget tolerates a half-volt drop; for lower-voltage rails where this loss is excessive, consider a P-MOSFET ideal-diode solution instead. The SMB package footprint simplifies retrofits into existing PCB designs, and the AEC-Q101 grade allows deployment in automotive battery-management boards.
Được đề xuất
OR-ing Diode in Redundant Power Systems
In redundant power architectures where two DC sources must be combined without cross-conduction, the NRVBS360BT3G functions as a low-loss OR-ing rectifier. Its Schottky characteristic provides a defined forward drop that prevents back-feeding between supplies, while the 3 A capacity covers typical telecom and industrial redundant-power rails at 24 V or 48 V. For applications requiring the lowest possible voltage loss, parallel Schottky OR-ing with hot-swap controllers provides a robust solution. The SMB package allows placement close to the input terminals to minimize trace resistance and inductance, and the AEC-Q101 grade supports deployment in automotive ECU power trees.
Được đề xuất
Solar Panel Bypass Diode
The NRVBS360BT3G serves as a bypass diode in low-voltage photovoltaic panels and solar-charging subsystems. When a panel cell becomes shaded or damaged, the bypass diode routes current around the affected section, preventing hot-spot damage and maintaining overall string output. With 60 V VRRM and 3 A capacity, the device covers typical 12 V and 24 V off-grid solar panels; for higher-voltage strings, multiple diodes must be series-stacked with appropriate voltage-sharing networks. The SMB surface-mount package suits automated panel-junction-box assembly, and the AEC-Q101 automotive qualification supports reliability in outdoor temperature swings.
Được đề xuất
DC-DC Converter Steering Diode
The NRVBS360BT3G operates as a steering diode in multi-rail DC-DC converters where outputs must be combined, blocked, or routed based on system state. Its fast switching and absence of reverse-recovery charge make it suitable for high-frequency multiplexing of supply rails in computing platforms and industrial controllers. The 3 A current rating handles typical 5 V to 24 V auxiliary rails up to 70 W of combined load. Mount the SMB close to the converter output with adequate thermal copper to dissipate conduction losses; the part is also commonly used in adapter input-selection circuits where the device must block reverse current from an alternative supply source.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho NRVBS360BT3G — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MBRS360BT3G | NRVBS360T3G | SS36 | B360 | SK36 |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated | Micro Commercial Components |
| Package | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) | SMB (DO-214AA) |
| Reverse Voltage (VRRM) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Forward Current (IF) | 3.0 A | 3.0 A | 3.0 A | 3.0 A | 3.0 A | 3.0 A |
| Forward Voltage (VF) at 3A | 0.63 V | 0.63 V | 0.63 V | 0.5 V (typical) | 0.7 V (max) | 0.55 V (typical) |
| Automotive Grade (AEC-Q101) | Yes (NRV prefix) | No (commercial) | Yes (NRV prefix) | No | No | No |
| Operating Temperature | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
| 1-piece Price (USD) | $0.48 | $0.40 (approx.) | $0.48 | $0.45 (approx.) | $0.35 (approx.) | $0.30 (approx.) |
Bảo phân biệt quan trọng
- AEC-Q101 automotive qualification with NRV prefix (vsMBRS360BT3G)
- Lower forward voltage than generic Schottky counterparts (vsB360 (Diodes Incorporated))
- Single onsemi die across both NRV and commercial lines (vsMBRS360BT3G)
Ghi chú thiết kế
Estimated: At IF=3 A and VF=0.63 V (typical), conduction loss is approximately 1.9 W. On a JEDEC-standard SMB pad of about 0.5 square inch of 1 oz copper, the SMB theta_JA is roughly 80 C/W, giving a 152 C junction temperature rise at 25 C ambient - exceeding the 150 C max. For continuous 3 A operation, expand the copper pad to 1 square inch minimum (theta_JA drops to ~55 C/W), reducing the rise to 105 C. Above 2 A continuous, add thermal vias to an inner-plane heat sink or specify forced airflow. Derate above 25 C ambient using the datasheet's TJ vs IF curve.
Follow JEDEC DO-214AA land-pattern recommendations: cathode pad approximately 2.6 mm x 1.8 mm, anode pad approximately 2.0 mm x 1.8 mm. Use solder paste that supports the SMB thermal-mass reflow profile (typical peak 245-260 C for lead-free). Maintain symmetric pad geometry to avoid tombstoning during reflow. Place the diode close to the source of inductance or switching node to minimize parasitic loop area, especially in free-wheeling and high-frequency rectification circuits.
Do not parallel multiple NRVBS360BT3G devices without series-sharing resistors - the negative temperature coefficient of VF leads to thermal runaway, with the hottest diode carrying progressively more current. For higher currents, use a single larger diode or a synchronous MOSFET solution. Also note that the NRVBS360BT3G-VF01 variant is rated 4 A and must not be substituted without re-validating thermal performance; the B and T suffixes indicate reel orientation, not electrical variants.
Thông tin tuân thủ
AEC-Q101 (automotive) qualified per the NRV prefix designation. AEC-Q100 specifically refers to ICs; discrete semiconductors are typically qualified to AEC-Q101. RoHS and REACH compliance per onsemi product documentation.