SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay
MPN: SI1563DH-T1-E3 ✓ Hoạt độngSI1563DH-T1-E3 Tóm tắt
An N/P complementary MOSFET pair is a single-package integration of one N-channel and one P-channel enhancement-mode MOSFET, allowing designers to build push-pull, level-shift, load-switch, and small-signal analog switches with a single SOT-363 footprint. Both transistors share identical 20 V drain-source breakdown ratings and on-resistance characteristics, so they can be used as direct half-bridge switches, analog signal multiplexers, and low-side/high-side complementary switching pairs in portable, battery-powered electronics.
The SI1563DH uses Vishay's TrenchFET Gen III technology to deliver sub-1 V gate threshold operation, suitable for direct interface with 1.8 V microcontrollers and modern low-power MCUs without external gate drivers. Low on-resistance per square millimeter minimizes conduction losses, while a 570 mW power budget supports load switching in handheld and wearable form factors. The compact SC-70-6 footprint reduces PCB area by more than 50% compared to two discrete SOT-23 MOSFETs.
Typical applications include load switching in portable devices, power-rail multiplexing, level shifting between low-voltage MCUs and 5 V peripherals, battery protection circuits in single-cell Li-ion systems, and small-signal analog switching for audio and sensor paths. The complementary topology enables half-bridge and H-bridge motor drive stages for vibration motors and small DC fans.
When laying out the SI1563DH, place the input/output traces symmetrically around the package center, connect the exposed paddle to a copper pour that also serves as thermal spreading, and keep gate traces short to prevent dv/dt-induced turn-on. The SC-70-6 footprint is electrically identical to a SOT-363 footprint and is fully compatible with standard reflow profiles up to 260 C peak.
Bộ thay thế dễ dàng lắp đặt cho SI1563DH-T1-E3 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với SI1563DH-T1-E3 (cùng hình factor và footprint) — khác nhau ở Configuration, Drain-Source Voltage (VDS), Operating Temperature Range, Package, RoHS Status.
SI1563EDH-T1-E3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SI1563DH-T1-GE3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SI1563DH-T1-E3 Tỷ lệ tối đa & tính chất điện
| Configuration | Complementary N/P-Channel MOSFET array |
| Drain-Source Voltage (VDS) | 20 V (N-channel and P-channel) |
| N-Channel Continuous Drain Current (ID) | 1.13 A |
| P-Channel Continuous Drain Current (ID) | 880 mA |
| Total Device Power Dissipation (PD) | 570 mW |
| Gate Threshold Type | Low-threshold (logic-level compatible) |
| Hộp | SC-70-6 (SOT-363), 6 pins |
| Kiểu lắp đặt | Surface Mount |
| Technology | TrenchFET (Vishay Gen III) |
| Polarity | N-channel + P-channel (complementary pair) |
| Khoảng nhiệt độ hoạt động | -55C to +150C (junction) |
| Lead-Free | Yes (per Vishay ordering info) |
| Đông trùng haogen | Per ordering option Si1563DH-T1-GE3 |
| Trạng thái RoHS | Compliant |
Cấu hình chân SI1563DH-T1-E3
| Chân 1 | G1 — Gate of N-channel MOSFET (Q1) |
| Chân 2 | S1/D2 — Source of N-channel / Drain of P-channel |
| Chân 3 | D1 — Drain of N-channel MOSFET (Q1) |
| Chân 4 | D2 — Drain of P-channel MOSFET (Q2) |
| Chân 5 | S2/D1 — Source of P-channel / Drain of N-channel |
| Chân 6 | G2 — Gate of P-channel MOSFET (Q2) |
Ứng dụng tiêu biểu
SI1563DH-T1-E3 phù hợp cho 6 Áp dụngs: Portable/Battery Load Switch, Logic Level Shift / Signal Translation, H-Bridge / Small DC Motor Driver, Small-Signal Analog Switch / Multiplexer, LED Driver / Backlight Dimming, IoT Sensor Power Rail Multiplexer.
Portable/Battery Load Switch
The SI1563DH-T1-E3 is well suited as a battery load switch in single-cell Li-ion portable devices. The 20 V VDS rating provides ample headroom above the 4.2 V maximum Li-ion charge voltage, while the 1.13 A N-channel and 880 mA P-channel can each handle typical sub-1 W peripheral loads (radios, sensors, displays). The complementary pair enables a single IC to drive both high-side and low-side switching paths, simplifying the power mux topology. Gate threshold below 1.8 V allows direct MCU control without an additional gate driver, which is critical in space-constrained wearables.
Được đề xuất
Logic Level Shift / Signal Translation
The SI1563DH-T1-E3 functions as a compact bidirectional logic level shifter between 1.8 V MCUs and 3.3 V or 5 V peripherals. The N-channel serves as the high-side pull-down switch while the P-channel acts as the high-side pull-up, replicating the classic BSS138 plus BSS84 topology in a single 6-pin SC-70-6 package. This reduces board area by more than 60% versus two discrete SOT-23 parts and ensures matched on-resistance across both directions. Typical use cases include I2C, UART, and SPI level translation in IoT endpoints and wearables.
Được đề xuất
H-Bridge / Small DC Motor Driver
The SI1563DH-T1-E3's complementary N/P topology makes it a natural fit for half-bridge stages in small H-bridge motor driver circuits for vibration motors, micro fans, and tiny DC pumps. By using two SI1563DH devices, a full H-bridge is realized in just two SC-70-6 packages (12 pins total), which is far more compact than four discrete SOT-23 MOSFETs. The 1.13 A N-channel and 880 mA P-channel provide matched switching speeds for clean PWM operation at 20-50 kHz.
Được đề xuất
Small-Signal Analog Switch / Multiplexer
The SI1563DH-T1-E3 is frequently deployed in low-frequency analog signal multiplexing for audio signal routing, sensor channel selection, and test-mux circuits. The N+P complementary pair provides low on-resistance (typically under 1 ohm at VGS=4.5 V) in a bidirectional signal path, achieving -60 dB crosstalk at audio bandwidths. The SC-70-6 package allows placement directly adjacent to the MCU ADC or op-amp input, minimizing trace-induced noise.
Được đề xuất
LED Driver / Backlight Dimming
The SI1563DH-T1-E3 is used as a 20 V-tolerant PWM-controlled LED driver for small backlight strings and indicator LEDs in portable devices. The N-channel low-side switch can sink up to 1.13 A per LED string, sufficient for 100-200 mA class backlights. The P-channel can implement high-side PWM dimming for common-anode RGB indicators without requiring an additional charge pump or bootstrap circuit, simplifying the BOM and shrinking the PCB.
Được đề xuất
IoT Sensor Power Rail Multiplexer
The SI1563DH-T1-E3 powers up multiple low-power IoT sensors sequentially to reduce quiescent current in battery-powered sensor nodes. The N-channel switches the ground return while the P-channel switches the supply rail, allowing zero-leakage isolation of inactive sensor branches. Typical battery savings of 30-70% are achieved in multi-sensor designs for smart-home, environmental monitoring, and asset-tracking applications.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho SI1563DH-T1-E3 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | SI1563EDH-T1-E3 | SI1563DH-T1-GE3 |
|---|---|---|---|
| Package | SC-70-6 (SOT-363) | SC-70-6 (SOT-363) - same | SC-70-6 (SOT-363) - same |
| Brand | Vishay Siliconix | Vishay Siliconix - same | Vishay Siliconix - same |
| Configuration | N/P complementary pair | N/P complementary pair - same | N/P complementary pair - same |
| Drain-Source Voltage | 20 V | 20 V | 20 V |
| N-Channel Continuous Drain Current | 1.13 A | 1.13 A | 1.13 A |
| P-Channel Continuous Drain Current | 880 mA | 880 mA | 880 mA |
| Total Power Dissipation | 570 mW | 570 mW | 570 mW |
| Halogen-Free | No (Pb-free only) | No (Pb-free only) | Yes (IEC 61249-2-21 compliant) |
| Lead-Free (RoHS) | Yes (-E3 suffix) | Yes (-E3 suffix) | Yes (-GE3 suffix) |
Bảo phân biệt quan trọng
- Only SC-70-6 dual complementary MOSFET from Vishay in this VDS/ID class (vsSI1553DL-T1-E3)
- Integrated N+P pair eliminates matched-pair sourcing (vsDiscrete SOT-23 N+P MOSFET pair)
- Logic-level gate threshold compatible with 1.8 V MCUs (vsDiscrete 4.5 V VGS(th) MOSFET pairs)
Ghi chú thiết kế
Estimated: at maximum continuous drain current on the N-channel (1.13 A) with on-resistance of ~0.4 ohm and 20 V VDS, the SI1563DH-T1-E3 dissipates roughly 0.5 W under worst-case switching conditions. The SC-70-6 package is rated for 570 mW total device dissipation on a JEDEC 1-square-inch 2 oz copper test board. Keep both N- and P-channel conduction duty cycles under 50% in continuous operation, and stitch thermal vias under the SC-70-6 land pattern to a continuous ground pour so both internal transistors share the same thermal mass.
Route gate traces to pins 1 (G1) and 6 (G2) before placing any other signal trace; the high-impedance gates are vulnerable to dv/dt-induced turn-on if the trace length exceeds 5 mm. Place the input/output RC snubber within 3 mm of each drain pin when driving inductive loads such as small motors or relays. Keep the N-channel drain trace and P-channel source trace on opposite sides of the package so the internal body-diode current path does not cross sensitive analog signals.
Do not exceed the 20 V VDS rating on either transistor: even brief transients above 24 V can permanently shift the gate threshold. When using the SI1563DH as a level shifter, ensure that VGS does not exceed +/- 8 V at any point during hot-plug or ESD events; add a 100 kohm pull-down on the gate if the driving MCU pin is high-impedance during power-up. Avoid using both channels at full rated current simultaneously - the 570 mW package dissipation limit must be shared, so at 0.5 W per channel the die temperature would exceed the 150 C junction rating.
Thông tin tuân thủ
RoHS compliant per -E3 suffix. Halogen-free variant available as SI1563DH-T1-GE3 per IEC 61249-2-21. Not qualified for automotive AEC-Q100.
