10M08DAF256C7G vs 10M08DCF256C8G 比較
詳細並排比較 10M08DAF256C7G 由 Intel 與 10M08DCF256C8G 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 10M08DAF256C7G | 10M08DCF256C8G |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Family | MAX 10 | — |
| Logic Elements (LE) | 8,000 | — |
| Embedded Memory (M9K blocks) | 46 (378 Kbits) | — |
| User Flash Memory | 387,072 bits (approx. 48 KB) | — |
| Maximum User I/O | 178 | — |
| Core Voltage | 1.2 V | — |
| 工作溫度 | 0 °C to +85 °C (Commercial, "C" grade) | 0C to +85C (commercial) |
| 封裝 | 256-pin LBGA (F256) | 256-LBGA (F256, FineLine BGA) |
| Package Dimensions | 17 mm × 17 mm, 1.0 mm ball pitch | — |
| On-chip ADC | 12-bit, 1 MSPS, 1 channel | — |
| PLLs | 2 | 2 |
| 18 × 18 Multipliers | 24 | — |
| Configuration | Dual-configuration internal flash (D-series) | Internal flash (instant-on, non-volatile) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| RoHS 狀態 | Compliant (Pb-free "G" suffix) | Compliant |
| Process Technology | [DATA_NEEDED: process node, typically 55 nm embedded flash] | TSMC 55 nm embedded flash CMOS |
| Internal Oscillator | Yes (on-chip) | — |
| Series | — | MAX 10 |
| Logic Elements | — | 8,000 |
| Embedded Memory (bits) | — | 387,072 (378 Kbits user flash + block SRAM) |
| User I/O Count | — | 178 |
| Pitch | — | 1.0 mm |
| Speed Grade | — | C8 (commercial, slowest speed bin) |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (per bank) |
| ADC | — | Dual 12-bit SAR, up to 17 analog inputs |
| 18x18 Multipliers | — | 8 |
| Global Clock Networks | — | 4 |
| Design Software | — | Intel Quartus Prime (Lite / Standard / Pro) |
| MSL 等級 | — | 3 (168 hours) |