27C512-25-X vs 27C512-25 比較

詳細並排比較 27C512-25-X 由 Fujitsu 與 27C512-25 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Microchip Technology
27C512-25 27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 Obsolete

規格比較

參數 27C512-25-X 27C512-25
品牌 Fujitsu Microchip Technology
類別 Memory ICs Memory ICs
生命週期狀態 Obsolete Obsolete
記憶體容量 512 Kbit (64K x 8) —
組織 65,536 words x 8 bits —
記憶體類型 UV EPROM CMOS EPROM (UV / OTP)
Access Time 250 ns —
Supply Voltage (Read) 5 V +/- 10% —
Technology CMOS CMOS floating gate
介面 Parallel —
Address Lines 15 (A0-A14) —
Data Lines 8 (D0-D7), 3-state outputs —
Control Signals /CE (chip enable), /OE (output enable), /PGM (program) —
Programming Voltage [DATA_NEEDED: VPP programming voltage] —
Standby Current [DATA_NEEDED: standby current] —
Active Current [DATA_NEEDED: active current] —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
封裝 28-pin DIP (windowed ceramic or plastic OTP variant per suffix) DIP-28
安裝類型 Through Hole Through Hole
Pinout JEDEC-approved 27C512 pinout —
RoHS 狀態 unknown (legacy non-RoHS-era part) [DATA_NEEDED: RoHS status]
Memory Organization — 64K x 8 (524,288 bits)
Maximum Access Time — 250 ns
Supply Voltage (Read Mode) — 5 V +/- 10%
Standby Current (CMOS) — 20 uA typical
Operating Mode — Asynchronous
輸出類型 — 3-state, common I/O
Pinout Standard — JEDEC-approved 28-pin
Programming Method — High-voltage EPROM programming (Flashrite type)
Erase Method — UV (windowed variant) or not erasable (OTP variant)
Access Time Guarantee — Any byte in less than 250 ns

資料表與資源

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