2ED21064S06JXUMA1 vs 1EDN7136UXTSA1 比較

詳細並排比較 2ED21064S06JXUMA1 由 Infineon 與 1EDN7136UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 啟用中

規格比較

參數 2ED21064S06JXUMA1 1EDN7136UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 High-Side and Low-Side Gate Driver High-side / Low-side gate driver IC
Configuration Half-Bridge (2 outputs, non-inverting) —
拓撲 High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated —
Input Logic Compatibility 3.3 V / 5 V CMOS —
工作溫度 -40C to +125C —
封裝 PG-DSO-14 (14-pin SOIC) TSNP-6 with exposed pad (PG-VSON-1)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS 狀態 ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Driven Device Type — GaN HEMT, N-channel MOSFET
輸出數量 — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
工作溫度範圍 — -40 C to +150 C
Lead-Free — Yes
無鹵素 — Yes (per Infineon product family convention)

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