2ED2738S01GXTMA1 vs 1ED3122MC12HXUMA1 比較

詳細並排比較 2ED2738S01GXTMA1 由 Infineon 與 1ED3122MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2ED2738S01GXTMA1 2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 ✓ 啟用中
Infineon
1ED3122MC12HXUMA1 1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 ✓ 啟用中

規格比較

參數 2ED2738S01GXTMA1 1ED3122MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Output Current (Source, peak) 4.0 A —
Output Current (Sink, peak) 8.0 A —
Output Current (Source, typ) 1.0 A —
Output Current (Sink, typ) 2.0 A —
輸出數量 1 —
Input Type Non-Inverting —
Input Logic Compatibility TTL —
Supply Voltage (VDD/VCC) 6 V to 20 V —
Bootstrap Supply Voltage Up to 600 V (HS pin rating) —
Propagation Delay (typ) 120 ns —
Channel-to-Channel Match 40 ns —
Rise/Fall Time (1 nF load) 1.5 ns / 1.5 ns —
Negative Transient Immunity (HS) -10 V to +20 V transient —
Under-Voltage Lockout VCC and Bootstrap —
Bootstrap Diode Integrated —
工作溫度 -40C to +125C -40 C to +125 C
封裝 PG-VSON-10-5 (3x3 mm) with EP PG-DSO-8-66 (300-mil DSO-8)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 (1 year) 2
RoHS 狀態 Compliant Compliant
Product Type — Isolated Gate Driver (single-channel)
Isolation Technology — Coreless Transformer (CT)
Isolation Voltage (Vrms) — 5.7 kVrms
Maximum Transient Isolation (Vpk) — 8 kVpk
Output Current (source / sink) — 10 A / 9 A
Configuration — High-side, non-inverting
Number of Channels — 1
Supply Voltage (VCC / VBS) — 8 V to 35 V
Propagation Delay (typ.) — 30 ns
Rise Time / Fall Time (typ.) — 15 ns / 30 ns
Miller Clamp — Active (integrated)
Short-Circuit Clamping — Yes
UVLO — Primary and secondary side

資料表與資源

瀏覽所有產品 建立 BOM 索取報價