2EDN7524GXTMA1 vs 1EDN7126GXTMA1 比較
詳細並排比較 2EDN7524GXTMA1 由 Infineon 與 1EDN7126GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 ✓ 啟用中規格比較
| 參數 | 2EDN7524GXTMA1 | 1EDN7126GXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Product Type | Low-side gate driver IC | — |
| Number of Channels | 2 (dual) | — |
| Drive Current (Source/Sink) | 5 A peak | — |
| Input Logic | Non-inverting, TTL / 3.3 V CMOS-compatible | — |
| Input Voltage Tolerance | -10 V to +20 V on logic pins | — |
| Supply Voltage (VCC) | 4.5 V to 20 V [DATA_NEEDED: exact range] | — |
| Propagation Delay | 20 ns typical [DATA_NEEDED: exact figure] | — |
| Channel-to-Channel Delay Matching | 1 ns | — |
| 上升時間 | 5 ns typical [DATA_NEEDED: exact test condition] | — |
| 下降時間 | 5 ns typical [DATA_NEEDED: exact test condition] | — |
| Output Stage | Rail-to-rail, separate source/sink | — |
| UVLO Protection | Yes | — |
| 工作溫度 | -40 C to +125 C | — |
| 封裝 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad | PG-VSON-10-4 |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Target Devices | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs | — |
| 功能 | — | Single-channel TDI gate driver for GaN HEMT and Si MOSFET |
| Configuration | — | Non-Inverting |
| Channel Type | — | Single |
| Driven Supply Voltage | — | [DATA_NEEDED: VCC max value] |
| Peak Source Current | — | 1.5 A |
| Peak Sink Current | — | 1.5 A |
| Common-Mode Voltage (CMR) | — | 200 V |
| Input Type | — | Truly Differential Input (TDI) |
| Propagation Delay (Typ.) | — | [DATA_NEEDED: tpd typical value] |
| Rise / Fall Time (Typ.) | — | [DATA_NEEDED: tr / tf typical value] |
| 工作溫度範圍 | — | -40C to +125C |
| Reach | — | Compliant |
| Lead-Free | — | Yes |
| Input Logic Compatibility | — | 3.3 V / 5 V TTL/CMOS (TDI) |