BFU520R vs BFU520XR 比較

詳細並排比較 BFU520R 由 NXP Semiconductors 與 BFU520XR 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
BFU520R BFU520R - NPN 12V 10.5GHz Wideband RF Transistor | NXP

BFU520R - NPN 12V 10.5GHz Wideband RF Transistor | NXP

BFU520R ✓ 啟用中
NXP Semiconductors
BFU520XR BFU520XR - NPN RF Transistor 2GHz SOT143R | NXP

BFU520XR - NPN RF Transistor 2GHz SOT143R | NXP

BFU520XR ✓ 啟用中

規格比較

參數 BFU520R BFU520XR
品牌 NXP Semiconductors NXP Semiconductors
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
電晶體類型 NPN wideband silicon RF BJT —
集極-射極電壓 (Vceo) 12 V —
Collector Current (IC max) 30 mA —
轉換頻率 (ft) 10.5 GHz —
Total Power Dissipation 450 mW —
Frequency Range up to 2 GHz application range —
封裝 SOT-143B (4-pin, dual-emitter, plastic) SOT143R (4-pin, plastic, dual emitter)
安裝類型 Surface Mount Surface Mount
Noise Performance Low noise, high breakdown —
Automotive Qualification AEC-Q101 qualified —
Family BFU5 (BFU5x wideband silicon RF transistors) BFU5
Configuration Single NPN, dual-emitter Single NPN, dual emitter pins
Application Class Small signal to medium power —
RoHS 狀態 [DATA_NEEDED: RoHS status] —
工作溫度範圍 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature]
Noise Figure [DATA_NEEDED: noise figure in dB] —
Gain [DATA_NEEDED: gain] —
Polarity — NPN
Technology — Silicon wideband RF BJT
Maximum Operating Frequency — 2 GHz
Continuous Collector Current — 0.05 A (50 mA)
Application Band — L Band
Number of Elements — 1
Typical Application — High speed, low noise amplification
集極-射極電壓 (Vceo) — [DATA_NEEDED: VCEO]
轉換頻率 (ft) — [DATA_NEEDED: fT]
Noise Figure NF — [DATA_NEEDED: NF]
Total Power Dissipation Ptot — [DATA_NEEDED: Ptot]
Ordering Suffix — XR

資料表與資源

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