BSC015NE2LS5IATMA1 vs BSC052N08NS5ATMA1 比較
詳細並排比較 BSC015NE2LS5IATMA1 由 Infineon 與 BSC052N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC015NE2LS5IATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 25V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 25 V | — |
| Continuous Drain Current (ID) at Ta | 33 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 1.5 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 50 W | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8 (SuperSO8) 5x6 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Technology | OptiMOS 5 trench | OptiMOS 5 |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: Qg typical value] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Part Number | — | BSC052N08NS5ATMA1 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 2.5-3.0 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| 工作接面溫度 | — | -55C to +150C |