BSC019N04LSTATMA1 vs BSC028N06NSTATMA1 比較

詳細並排比較 BSC019N04LSTATMA1 由 Infineon 與 BSC028N06NSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ 啟用中
Infineon
BSC028N06NSTATMA1 BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 ✓ 啟用中

規格比較

參數 BSC019N04LSTATMA1 BSC028N06NSTATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 5 (N-channel trench MOSFET) MOSFET N-Channel (OptiMOS 5)
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V 2.5 V to 3.5 V
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
工作溫度範圍 -55 C to +150 C —
封裝 TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8-7 (SuperSO8, 5x6 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) 1
RoHS 狀態 Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
工作接面溫度 — -55C to +175C
無鹵素 — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

資料表與資源

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