BSC019N04LSTATMA1 vs IAUC120N06S5N032ATMA1 比較

詳細並排比較 BSC019N04LSTATMA1 由 Infineon 與 IAUC120N06S5N032ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ 啟用中
Infineon
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 ✓ 啟用中

規格比較

參數 BSC019N04LSTATMA1 IAUC120N06S5N032ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS-5 N-Channel
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V —
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
工作溫度範圍 -55 C to +150 C -55C to +175C (Tj)
封裝 TDSON-8 (SuperSO8) 5x6 mm PG-TDSON-8-34 (SSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount (Tape and Reel)
MSL 等級 1 (unlimited) MSL 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Continuous Drain Current (ID) at TC=25C — 120 A
Power Dissipation (PD) at TC=25C — 94 W
On-Resistance RDS(on) max at VGS=10V — 3.2 mOhm
Gate Charge (Qg) typ — 47 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
腳位數 — 8
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Gate Resistance (Rg) — [DATA_NEEDED: Rg]
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes

資料表與資源

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