BSC050NE2LSATMA1 vs BSZ011NE2LS5IATMA1 比較
詳細並排比較 BSC050NE2LSATMA1 由 Infineon 與 BSZ011NE2LS5IATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC050NE2LSATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 58 A | — |
| Continuous Drain Current (I_D) at Ta=25C | 39 A | — |
| R_DS(on) max at V_GS=10V | 5 mOhm | — |
| R_DS(on) typical at V_GS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 28 W | — |
| Technology | OptiMOS 25V (trench) | OptiMOS 5 (Trench) |
| 封裝 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C | -55°C to +150°C |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| MSL 等級 | — | MSL1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |