BSC052N08NS5ATMA1 vs BSC030N03LSGATMA1 比較
詳細並排比較 BSC052N08NS5ATMA1 由 Infineon 與 BSC030N03LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC052N08NS5ATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | — |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| 工作接面溫度 | -55C to +150C | -55C to +150C |
| 封裝 | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (unlimited) | 1 |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | — | 23 A |
| RDS(on) Max @ VGS=10V | — | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | — | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | — | 55 nC |
| Output Charge (Qoss) | — | 66 pF |
| Input Capacitance (Ciss) Typ | — | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | — | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | — | 69 W |
| Avalanche Rated | — | Yes (100% tested) |