BSC076N04NDATMA1 vs AIKB40N65DH5ATMA1 比較
詳細並排比較 BSC076N04NDATMA1 由 Infineon 與 AIKB40N65DH5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC076N04NDATMA1 | AIKB40N65DH5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | IGBTs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | TRENCHSTOP 5 (Trench + Field-Stop) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 / 外殼 | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| Part Number | — | AIKB40N65DH5ATMA1 |
| 電晶體類型 | — | IGBT NPT (Non-Punch-Through) |
| Collector-Emitter Voltage (VCES) | — | 650 V |
| Continuous Collector Current (IC) at TC=100C | — | 40 A |
| Pulsed Collector Current (ICM) | — | 74 A |
| Gate-Emitter Voltage (VGES) | — | +/-20 V |
| VCE(sat) at IC=40 A, VGE=15 V, Tj=25C | — | [DATA_NEEDED: VCE(sat) typical value] |
| Co-packaged Diode | — | RAPID 1 fast and soft antiparallel diode |
| 封裝 | — | PG-TO263-3-2 (D2PAK, surface mount) |
| 工作溫度範圍 | — | -40C to +175C (junction) |
| Automotive Qualification | — | AEC-Q101 qualified (TRENCHSTOP 5 AUTO) |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Typical Applications | — | EV chargers, DC/AC converters, photovoltaic inverters, motor drives, induction cooking |