BSC0993NDATMA1 vs BSC042NE7NS3GATMA1 比較
詳細並排比較 BSC0993NDATMA1 由 Infineon 與 BSC042NE7NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0993NDATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| 封裝 | PG-TISON-8 | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 3 |
| Channel Mode | Enhancement | — |
| 工作溫度範圍 | -55C to +150C (junction) | -55C to +150C |
| ESD Protection | Yes (integrated) | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Part Number | — | BSC042NE7NS3GATMA1 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |