BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon
MPN： BSC0993NDATMA1 ✓ 啟用中BSC0993NDATMA1 概覽
A MOSFET array is a semiconductor device that integrates two or more discrete MOSFET transistors into a single package, sharing a common drain, source, or gate configuration. Arrays simplify PCB layout, reduce parasitic inductance between half-bridge switches, and shrink the total solution footprint. In the broader taxonomy, MOSFET arrays sit under discrete semiconductors -> MOSFETs -> power MOSFETs -> synchronous FET arrays. Compared with using two separate DFN MOSFETs, an integrated array halves the loop area of the high-current switching path, which directly suppresses ringing and switching losses in buck/boost converters.
Key features of the BSC0993NDATMA1 include OptiMOS 5 30V technology, 17A continuous drain current, low Rds(on) typical of the OptiMOS 5 family, integrated ESD protection, and a thermally enhanced PG-TISON-8 exposed-pad package that lowers junction-to-ambient thermal resistance. The compact 5 mm x 6 mm package footprint allows direct drop-in replacement of competing dual N-channel arrays.
The OptiMOS 5 architecture uses Infineon's advanced trench cell design that shrinks die area per mOhm while improving switching figures-of-merit (Qg x Rds(on)). This array is particularly suited for synchronous buck converters where the low-side and high-side FETs are co-packaged for minimal gate-loop inductance. The combined lower gate charge and reduced Qrr also improve light-load efficiency, which matters for energy-star compliant platforms.
Typical applications include synchronous buck DC-DC converters for server, telecom, and POL (point-of-load) voltage rails, half-bridge motor drive stages, USB-PD and Quick Charge adapters, battery management system (BMS) protection FET arrays, and hot-swap circuits. The 30V rating gives ample margin for 12V rails and transient spikes typical in industrial and automotive environments.
When designing with this part, place the gate-drive resistors as close as possible to the gate pins to suppress parasitic ringing, and connect the exposed pad to a sufficiently large copper pour. For optimal thermals, use at least 1 oz copper on top and bottom layers stitched with thermal vias beneath the pad.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 BSC0993NDATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： BSC0993NDATMA1 （相同外形與佔位） — 差異在於 Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Continuous Drain Current (ID) at Ta.
BSC0911NDATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BSC034N06NSATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BSC027N10NS5ATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BSC042NE7NS3GATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BSC035N04LSGATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BSC0993NDATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 5 30V |
| Configuration | Dual N-Channel (Array) |
| Drain-Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Id) @ Ta | 17 A |
| 封裝 | PG-TISON-8 |
| 安裝類型 | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET |
| Channel Mode | Enhancement |
| 工作溫度範圍 | -55C to +150C (junction) |
| ESD Protection | Yes (integrated) |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
BSC0993NDATMA1 腳位配置
| 腳位 1 | G1 — Gate of FET 1 (high-side or low-side depending on orientation) |
| 腳位 2 | S1 — Source of FET 1 |
| 腳位 3 | D1 — Drain of FET 1 |
| 腳位 4 | S2 — Source of FET 2 |
| 腳位 5 | G2 — Gate of FET 2 |
| 腳位 6 | D2 — Drain of FET 2 |
| 腳位 7 | D1 — Drain of FET 1 (continued) |
| 腳位 8 | EP — Exposed pad (thermal pad, connect to copper pour for heatsinking) |
安全工作區 (DC, per channel, Tcase=25C)
典型應用
BSC0993NDATMA1 適用於 6 應用s: Synchronous Buck DC-DC Converter, USB-PD and Quick Charge Adapter, Half-Bridge Motor Drive Stage, Battery Management Hot-Swap Circuit, Server and Telecom Point-of-Load Rail, Industrial 24V Bus Switching.
Synchronous Buck DC-DC Converter
The BSC0993NDATMA1 is purpose-built for synchronous buck DC-DC converters used in server, telecom, and POL (point-of-load) rails. Its dual N-channel 30V OptiMOS 5 array integrates the high-side and low-side FETs in one PG-TISON-8 package, halving the high-current switching loop versus two discrete DFN MOSFETs and reducing source inductance by 30-50%. This directly suppresses switching-node ringing, lowers switching loss, and improves light-load efficiency to meet 80+ Titanium and ENERGY STAR v5 compliance. At 500 kHz-1 MHz switching frequency, the OptiMOS 5 FOM (Rds(on) x Qg) delivers best-in-class figures-of-merit. Place a 1-4.7 ohm gate resistor on each gate to damp residual ringing, and tie the exposed pad to a 1 oz copper pour with thermal vias for full 17A capability.
推薦
USB-PD and Quick Charge Adapter
The BSC0993NDATMA1 fits USB Power Delivery and Quick Charge adapter primary-side synchronous rectification stages. The 30V Vds rating comfortably handles the rectified 19-20V output rail with margin for transient spikes, while the OptiMOS 5 platform's low Rds(on) minimizes conduction loss in a compact adapter form factor. The PG-TISON-8 exposed-pad package dissipates synchronous rectifier heat without an external heatsink, enabling 65-100W adapter designs in <100 cc enclosures. Designers should pair the array with a QR/DCM controller such as the XDPL8219XUMA1 for primary-side regulation, and validate thermal performance in a 90C ambient chamber to ensure compliance with adapter safety standards.
推薦
Half-Bridge Motor Drive Stage
The BSC0993NDATMA1 dual N-channel array integrates the high-side and low-side switches of a half-bridge motor drive stage for brushed DC and small BLDC motors. The integrated TISON-8 package minimizes source inductance in the switching loop, suppressing the dV/dt-induced ringing that otherwise requires snubbers or gate-drive filters. At 17A continuous per channel, the array drives 12V/24V brushed motor loads up to ~200W without thermal issues, provided the PCB copper pour is sized per Infineon's thermal guidance. Use a dedicated gate driver like the IRS2302STRPBF or 2EDL8023GXUMA1 to achieve sub-100ns switching transitions.
推薦
Battery Management Hot-Swap Circuit
The BSC0993NDATMA1 serves as the hot-swap protection FET array in 12V/24V battery management systems, where two N-channel MOSFETs in back-to-back configuration isolate the load during insertion events. The array's 30V Vds rating tolerates inductive transients on the battery rail, and the low Rds(on) minimizes steady-state voltage drop and heat dissipation across the protection FETs. The PG-TISON-8 footprint is footprint-compatible with discrete dual N-channel solutions, simplifying BMS layouts. Designers should add a TVS clamp across drain-source and verify SOA curves at the inrush current limit to ensure the part stays within thermal limits during hot-plug events.
推薦
Server and Telecom Point-of-Load Rail
The BSC0993NDATMA1 fits 12V-input point-of-load (POL) voltage regulator modules in server and telecom equipment, where it serves as the synchronous rectifier in a multi-phase buck topology. Multi-phase designs benefit from the array's small footprint, low loop inductance, and tight Rds(on) tolerance across phases. At per-channel 17A continuous, two phases of the BSC0993NDATMA1 deliver >30A total output current at 12V input. The OptiMOS 5 platform's low Qg reduces driver loss, enabling higher switching frequency and smaller output inductors. Pair with a digital multi-phase controller for telemetry and dynamic voltage scaling.
推薦
Industrial 24V Bus Switching
The BSC0993NDATMA1 handles 24V industrial bus switching for PLC outputs, sensor power distribution, and industrial Ethernet (EtherCAT, Profinet) power rails. The 30V Vds rating gives sufficient margin above 24V nominal with allowance for transient surges to 36V on long cable runs. The OptiMOS 5 platform's rugged avalanche rating and integrated ESD protection suit the noisy industrial environment. The PG-TISON-8 package is drop-in compatible with competing dual N-channel arrays, easing second-sourcing. Pair with the BTS621L1E3128AAUMA1 high-side switch or TLE94112ESXUMA1 multi-channel driver for complete industrial switching solutions.
推薦
推薦產品摘要
工程參考資料，適用於 BSC0993NDATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | BSC0911NDATMA1 | BSC034N06NSATMA1 | BSC027N10NS5ATMA1 | BSC035N04LSGATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TISON-8 | PG-TISON-8 (same) | PG-TISON-8 (same) | PG-TISON-8 (same) | PG-TISON-8 (same) | PG-TISON-8 (same) |
| Drain-Source Voltage (Vds) | 30 V | 30 V | 60 V | 100 V | 40 V | 75 V |
| Technology Family | OptiMOS 5 30V | OptiMOS 5 30V | OptiMOS 5 60V | OptiMOS 5 100V | OptiMOS 5 40V | OptiMOS 5 75V |
| Configuration | Dual N-Channel | Dual N-Channel | Single N-Channel | Single N-Channel | Single N-Channel | Single N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Dual N-channel integration in a single TISON-8 package (對比BSC0911NDATMA1 (single variant))
- OptiMOS 5 30V platform optimized for 12V rails (對比BSC034N06NSATMA1 (60V variant))
- Compact 5x6mm footprint with exposed thermal pad (對比BSC042NE7NS3GATMA1 (75V variant))
設計說明
Estimated: at 12V VIN, 17A continuous drain current per channel with 25% duty cycle, each channel dissipates approximately (Rds(on) x I^2 x duty). The PG-TISON-8 package requires a copper pour of at least 1 sq inch on top and bottom layers with thermal vias beneath the exposed pad to maintain junction temperature below 150C. Without adequate PCB copper, the array will derate significantly above 8-10A per channel.
Place gate-drive resistors (1-4.7 ohm) as close as possible to the gate pins to suppress parasitic ringing from the gate-source loop inductance. Connect the exposed pad directly to a low-impedance ground plane with multiple thermal vias to minimize junction-to-ambient thermal resistance. Avoid routing sensitive analog signals (e.g., feedback, current sense) directly under the switching node to prevent capacitive coupling.
Do not exceed the absolute maximum Vds of 30V, including transient spikes. Add a TVS clamp or RC snubber across drain-source if ringing exceeds 80% of Vds max during turn-off. For dual-FET half-bridge configurations, ensure adequate dead-time in the gate-drive controller to prevent shoot-through current, which can instantaneously exceed SOA limits and damage both FETs. Verify that the chosen gate driver's voltage rating matches the array's Vgs(max) rating.
Use 1 oz copper minimum on top and bottom layers stitched with thermal vias (typically 0.3 mm drill, 1 mm pitch) beneath the PG-TISON-8 exposed pad. For high-current applications exceeding 10A per channel, increase to 2 oz copper or add an external copper heatsink layer. Place the gate-driver IC within 10 mm of the gate pins to minimize gate-loop inductance and switching loss.
合規資訊
RoHS compliant per Infineon product page. AEC-Q100 qualification status not verified for this variant - check Infineon automotive-grade catalog for AEC-Q100 qualified dual N-channel arrays.
